Flipchip工藝流程

1、flip chip,製程,1.metal bump 金屬凸塊-c4 process(ibm) 2. tape-automated bonding 捲帶接合-acf process 3. anisotropic conductive adhesives 異方向性導(dǎo)電膠 -acp process 4.polymer bump 高分子凸塊 - c4 process 5.stud bump. 打線成球 - acp process(matsushita,flip chip conductive method - connect to substrate/pcb,c4: controlled collap

2、se chip connection,acf: anisotropic conductive film,acp(aca): anisotropic conductive adhesive paste,kingbond training course,kingbond training course,various flip chip technologies,ps: wit ( wire interconnect technology) tab(tape- automated bonding,kingbond training course,various flip chip technolo

3、gies,kingbond training course,stud bump,flip chip bond,underfill,cure oven,cure oven,sbb process,c4: controlled collapse chip connection process,kingbond training course,reflow oven,flip chip bonder,flux cleaner,underfill dispenser,cure oven,1. flux coating or re-printing 2. mounting,heating,cleanin

4、g,dispensing,heating,wafer bump,bump by solder,acp: anisotropic conductive paste process,reflow oven,flip chip bonder,underfill dispenser,cure oven,thermosetting,dispensing,heating,1. print the aca 2. alignment,wafer bump,bump by ag,kingbond training course,acf: anisotropic conductive film process,a

5、cf pre-setter,flip chip bonder,press and cure equipment,acf pre-setting,1. mounting 2.heating 3.press,1.heating 2.press,wafer bump,bump by au,kingbond training course,overcoat with polymide and open the bump areas.pattern wettable base metal,coat chip with polymide, open vias over each pad,used dry-

6、film lift-off process to define base metal and solder on each pad,pattern aluminum to re-route i/o to on area array,conventional chip with aluminum i/o pads around the perimeter,tack,flux & reflow,print,place & reflow,kingbond training course,fct bump structure,silicon wafer,ubm-under bump metallurg

7、y,solder bump,final metal pad,die passivation,wafer bump,kingbond training course,1. 蒸鍍 evaporation 2. 濺鍍 sputter 3. 電鍍 electroplating 4. 印刷 printed solder paste bump 5. 錫球焊接 solder ball bumping or stud bump bonding (sbb) 6.無電鍍鎳 electroless nickel technologies,metal bump method,ubm,kingbond training

8、 course,1.95sn/5pb,97sn/3pb 高溫錫鉛合金 2. 63sn/37pb 低溫錫鉛合金 3. ni 鎳 4. au 金 5.cu 銅,material of solder bump,kingbond training course,silicon wafer arrives with an aluminum based final metal pad and die passivation. wafer can be probed prior to bumping,wafer bump (printed method) process:wafer clean,kingbo

9、nd training course,the under bump metallurgy is added by fct through sputtered layers of al,ni-v,&cu,wafer bump (printed method) process: sputter ubm,al/ni/cu(au,kingbond training course,ubm consist 3 layer: 1. adhesion layer : ti,cr,tiw 提供鋁墊(al pad)與護層(passivation layer)有較強之黏著性 2. wetting layer:ni,

10、cu,mo,pt 高溫迴焊時錫球可完全沾附而成球 3. protective layer:au 保護 ni,cu等免於被氧化,wafer bump (evaporation method) process: sputter ubm,kingbond training course,apply photoresist, pattern and develop,wafer bump (printed method) process:photo-resist,kingbond training course,etch to form ubm cap,wafer bump (printed metho

11、d) process: etch ubm,kingbond training course,deposit solder paste and reflow to form bump,wafer bump (printed method) process: print solder paste & reflow,sn/pb 63/37 低溫 95/5高溫,kingbond training course,sample measure bump height, bump shear and bump resistance,wafer bump (printed method) process: i

12、nspection,kingbond training course,1. evaporative bumps are 125 mils in diameter and 100 mils high. 2. plated bumps are 125 - 175 mils in diameter and 25 -100 mils high,the typical size of a bump before reflow,kingbond training course,製程名稱,晶片背面黏貼 wafer mounting,生產(chǎn)設(shè)備,晶片背面黏貼機,檢驗設(shè)備,顯微鏡,製程說明,將膠帶黏貼於晶片背面,

13、避免晶片切割時分離,設(shè)備名稱,檢驗重點項目,1. 晶片方向 die orientation 2. 氣泡 air bubble 3. 表面皺紋wrinkle,製程圖例,模框,晶片,kingbond training course,process,inspect wafer,kingbond training course,晶片切割 die saw,生產(chǎn)設(shè)備,晶片切割機,檢驗設(shè)備,顯微鏡,製程說明,依據(jù)晶粒尺寸大小, 利用切割刀具, 將晶片切割成 單顆的晶粒,1. 切割道寬度 street width 2. 崩裂 crack,製程圖例,晶粒,晶片,設(shè)備名稱,檢驗重點項目,kingbond trai

14、ning course,上晶片 flip chip,生產(chǎn)設(shè)備,晶片上片機,檢驗設(shè)備,x-ray影像觀測機,製程說明,依據(jù)晶粒尺寸大小, 利用上晶片機將單顆的晶粒,分別植入基板或模組,1. bump定位與焊接情形 2. 晶片崩裂 crack,有無短路,斷路,製程圖例,設(shè)備名稱,檢驗重點項目,chip,bump,substrate/module,kingbond training course,上晶片流程 flip chip flow,pick up,flip,precision,added flux,bonding/reflow,基板/模組,c4 process,kingbond trainin

15、g course,上晶片流程 flip chip flow,pick up,flip,precision,added film/paste,bonding with heating,基板/模組,acf & acp,kingbond training course,填膠 under-fill,設(shè)備名稱,生產(chǎn)設(shè)備,填膠機,檢驗設(shè)備,x-ray影像觀測機,製程說明,利用填膠機將已完成植入基板或模組之每單顆的晶粒,分別以填膠注入,1. 有無球脫或晶圓偏移,製程圖例,檢驗重點項目,kingbond training course,why do you need to underfill,solder j

16、oint reliability for flip chips is based on several factors,1. bump alloy type 2.solder joint height(standoff) 3. distance to neutral point or dnp. (a measurement of the center of mass of the die to the farthest bump on the die, typically the corner bump.,kingbond training course,填膠製程 under-fill,1.

17、毛細(xì)作用型 capillary type): 利用毛細(xì)力造成膠材之流動. 2. 異方向?qū)щ娔z(anisotropic conductive adhesive): 低溫製程,分膏狀(paste)和膜狀(film) 3. 前置型(pre-applied type): 小尺寸晶片(6mm),點膠(die attachment)後再迴焊(reflow,kingbond training course,填膠製程 under-fill,製程與材料之限制: 1. 加強快速填膠與固化能力 2. 提昇其介面之黏著力 3. 較低的吸水率 4. 提昇低錫鉛球間距內(nèi)的流動性 5. 加強可重工性(rework,king

18、bond training course,製程名稱,填膠烘烤 underfill cure,製程說明,生產(chǎn)設(shè)備,填膠烤箱,檢驗設(shè)備,將填膠後之產(chǎn)品,利用烤箱進行烘烤作業(yè), 以消除內(nèi)部所留之應(yīng)力及固化填膠,顯微鏡 斷層掃瞄機 sat,製程圖例,烘烤,檢驗重點項目,1. 膠體mold body,設(shè)備名稱,kingbond training course,製程名稱,雷射正印 laser marking,生產(chǎn)設(shè)備,雷射正印機,檢驗設(shè)備,將文字/字號以雷射正印到晶片背面區(qū)域,用以辨識產(chǎn)品及批號追蹤等等,設(shè)備名稱,顯微鏡,製程圖例,檢驗重點項目,1. 文字內(nèi)容 content 2. 位置方向orientation 3. 易辨讀legibility,文字,基板/模組,製程說明,裸晶背面,kingbond trai