CMOS-flowppt課件

1、;.1Hong Xiao, Ph. D.Author of Introduction of Semiconductor Manufacturing Technology;.2P-WaferCMOS PROCESS FLOW;.3P-EpiP-WaferDeposit p-type epitaxial siliconCMOS PROCESS FLOW;.4P-EpiP-WaferDeposit p-type epitaxial siliconCMOS PROCESS FLOW;.5P-EpiP-WaferDeposit p-type epitaxial siliconCMOS PROCESS F

2、LOW;.6P-EpiP-WaferDeposit p-type epitaxial siliconCMOS PROCESS FLOW;.7P-EpiP-WaferDeposit p-type epitaxial siliconCMOS PROCESS FLOW;.8P-EpiP-WaferDeposit p-type epitaxial siliconCMOS PROCESS FLOW;.9P-EpiP-WaferDeposit p-type epitaxial siliconCMOS PROCESS FLOW;.10P-EpiP-WaferCMOS Process Flow: Well F

3、ormationWafer clean;.11P-EpiP-WaferCMOS Process Flow: Well FormationGrow screen oxide;.12P-EpiP-WaferCMOS Process Flow: Well FormationGrow screen oxide;.13P-EpiP-WaferWafer cleanCMOS Process Flow: Well Formation;.14P-EpiP-WaferPre-bake, apply primerCMOS Process Flow: Well Formation;.15P-EpiP-WaferSp

4、in-on photoresistCMOS Process Flow: Well FormationPhotoresist;.16P-EpiP-WaferCMOS Process Flow: Well FormationPhotoresistSpin-on photoresist;.17P-EpiP-WaferCMOS Process Flow: Well FormationPhotoresistSpin-on photoresist;.18P-EpiP-WaferCMOS Process Flow: Well FormationPhotoresistSpin-on photoresist;.

5、19P-EpiP-WaferCMOS Process Flow: Well FormationPhotoresistSpin-on photoresist;.20P-EpiP-WaferCMOS Process Flow: Well FormationPhotoresistSpin-on photoresist;.21P-EpiP-WaferCMOS Process Flow: Well FormationPhotoresistSpin-on photoresist;.22P-EpiP-WaferSoft bakeCMOS Process Flow: Well FormationPhotore

6、sist;.23P-EpiP-WaferSoft bakeCMOS Process Flow: Well FormationPhotoresist;.24P-EpiP-WaferSoft bakeCMOS Process Flow: Well FormationPhotoresist;.25Mask 1: N-well ;.26Mask 1: N-well ;.27Mask 1: N-well ;.28Mask 1: N-well ;.29Mask 1: N-well ;.30Mask 1: N-well ;.31Mask 1: N-well ;.32Mask 1: N-well ;.33Ma

7、sk 1: N-well ;.34Mask 1: N-well ;.35P-EpiP-WaferN-well mask exposeCMOS Process Flow: Well FormationPhotoresistUV or DUV light;.36P-EpiP-WaferN-well mask exposeCMOS Process Flow: Well FormationUV or DUV lightPhotoresist;.37P-EpiP-WaferN-well mask exposeCMOS Process Flow: Well FormationPhotoresistUV o

8、r DUV light;.38P-EpiP-WaferN-well mask exposeCMOS Process Flow: Well FormationPhotoresistUV or DUV light;.39P-EpiP-WaferN-well mask exposeCMOS Process Flow: Well FormationPhotoresistUV or DUV light;.40P-EpiP-WaferN-well mask exposeCMOS Process Flow: Well FormationPhotoresistUV or DUV light;.41P-EpiP

9、-WaferN-well mask exposeCMOS Process Flow: Well FormationPhotoresistUV or DUV light;.42P-EpiP-WaferN-well mask exposePost exposure bakeCMOS Process Flow: Well FormationPhotoresist;.43P-EpiP-WaferCMOS Process Flow: Well FormationP-EpiP-WaferCMOS Process Flow: Well FormationDevelopPhotoresist;.44P-Epi

10、P-WaferDevelopCMOS Process Flow: Well FormationPhotoresist;.45P-EpiP-WaferDevelopCMOS Process Flow: Well FormationPhotoresist;.46P-EpiP-WaferDevelopCMOS Process Flow: Well FormationPhotoresist;.47P-EpiP-WaferDevelopCMOS Process Flow: Well FormationPhotoresist;.48P-EpiP-WaferDevelopCMOS Process Flow:

11、 Well FormationPhotoresist;.49P-EpiP-WaferHard bakePattern checkCMOS Process Flow: Well FormationPhotoresist;.50P-EpiP-WaferCMOS Process Flow: Well FormationN-well ion implantation, phosphorusPhotoresistN-WellP+P+;.51P-EpiP-WaferCMOS Process Flow: Well FormationN-well ion implantation, phosphorusPho

12、toresistN-WellP+P+;.52P-EpiP-WaferCMOS Process Flow: Well FormationN-well ion implantation, phosphorusPhotoresistN-WellP+P+;.53P-EpiP-WaferCMOS Process Flow: Well FormationN-well ion implantation, phosphorusPhotoresistN-WellP+P+;.54P-EpiP-WaferCMOS Process Flow: Well FormationN-well ion implantation

13、, phosphorusPhotoresistN-WellP+P+;.55P-EpiP-WaferCMOS Process Flow: Well FormationN-well ion implantation, phosphorusPhotoresistN-WellP+P+;.56P-EpiP-WaferCMOS Process Flow: Well FormationN-well ion implantation, phosphorusPhotoresistN-WellP+P+;.57P-EpiP-WaferCMOS Process Flow: Well FormationN-well i

14、on implantation, phosphorusPhotoresistN-WellP+P+;.58P-EpiP-WaferCMOS Process Flow: Well FormationN-well ion implantation, phosphorusPhotoresistN-WellP+P+;.59P-EpiP-WaferCMOS Process Flow: Well FormationN-well ion implantation, phosphorusPhotoresistN-WellP+P+;.60P-EpiP-WaferCMOS Process Flow: Well Fo

15、rmationN-well ion implantation, phosphorusPhotoresistN-WellP+P+;.61P-EpiP-WaferCMOS Process Flow: Well FormationN-well ion implantation, phosphorusPhotoresistN-WellP+P+;.62P-EpiP-WaferCMOS Process Flow: Well FormationN-well ion implantation, phosphorusPhotoresistN-WellP+P+;.63P-EpiP-WaferCMOS Proces

16、s Flow: Well FormationN-well ion implantation, phosphorusPhotoresistN-WellP+P+;.64P-EpiP-WaferCMOS Process Flow: Well FormationN-well ion implantation, phosphorusPhotoresistN-WellP+P+;.65P-EpiP-WaferCMOS Process Flow: Well FormationN-well ion implantation, phosphorusPhotoresistN-WellP+P+;.66P-EpiP-W

17、aferCMOS Process Flow: Well FormationStrip photoresistPhotoresistN-Well;.67P-EpiP-WaferCMOS Process Flow: Well FormationStrip photoresistPhotoresistN-Well;.68P-EpiP-WaferCMOS Process Flow: Well FormationStrip photoresistPhotoresistN-Well;.69P-EpiP-WaferCMOS Process Flow: Well FormationStrip photores

18、istPhotoresistN-Well;.70P-EpiP-WaferCMOS Process Flow: Well FormationStrip photoresistPhotoresistN-Well;.71P-EpiP-WaferCMOS Process Flow: Well FormationStrip photoresistPhotoresistN-Well;.72P-EpiP-WaferCMOS Process Flow: Well FormationStrip photoresistWafer cleanN-Well;.73P-EpiP-WaferCMOS Process Fl

19、ow: Well FormationN-WellAnneal and drive-in;.74P-EpiP-WaferCMOS Process Flow: Well FormationN-WellAnneal and drive-in;.75P-EpiP-WaferCMOS Process Flow: Well FormationN-WellAnneal and drive-in;.76P-EpiP-WaferCMOS Process Flow: Well FormationN-WellAnneal and drive-in;.77CMOS Process Flow: Well Formati

20、onP-EpiP-WaferN-WellAnneal and drive-in;.78CMOS Process Flow: Well FormationP-EpiP-WaferN-WellClean;.79CMOS Process Flow: Well FormationP-EpiP-WaferN-WellPre-bake, apply primer;.80CMOS Process Flow: Well FormationP-EpiP-WaferN-WellSpin-on photoresist;.81CMOS Process Flow: Well FormationP-EpiP-WaferN

21、-WellSoft bake;.82Mask 2: P-well ;.83Mask 2: P-well ;.84Mask 2: P-well ;.85Mask 2: P-well ;.86Mask 2: P-well ;.87Mask 2: P-well ;.88Mask 2: P-well ;.89Mask 2: P-well ;.90Mask 2: P-well ;.91Mask 2: P-well ;.92Mask 2: P-well ;.93CMOS Process Flow: Well FormationP-EpiP-WaferN-WellPhotoresistP-well mask

22、 exposeUV light;.94CMOS Process Flow: Well FormationP-EpiP-WaferN-WellPhotoresistP-well mask exposeUV light;.95CMOS Process Flow: Well FormationP-EpiP-WaferN-WellPhotoresistP-well mask exposeUV light;.96CMOS Process Flow: Well FormationP-EpiP-WaferN-WellPhotoresistP-well mask exposeUV light;.97CMOS

23、Process Flow: Well FormationP-EpiP-WaferN-WellPhotoresistP-well mask exposeUV light;.98CMOS Process Flow: Well FormationP-EpiP-WaferN-WellPhotoresistP-well mask exposeUV light;.99CMOS Process Flow: Well FormationP-EpiP-WaferN-WellPhotoresistPost exposure bake;.100CMOS Process Flow: Well FormationP-E

24、piP-WaferN-WellPhotoresistDevelop;.101CMOS Process Flow: Well FormationP-EpiP-WaferN-WellPhotoresistDevelop;.102CMOS Process Flow: Well FormationP-EpiP-WaferN-WellPhotoresistDevelop;.103CMOS Process Flow: Well FormationP-EpiP-WaferN-WellPhotoresistDevelop;.104CMOS Process Flow: Well FormationP-EpiP-

25、WaferN-WellPhotoresistDevelop;.105CMOS Process Flow: Well FormationP-EpiP-WaferN-WellPhotoresistHard bake;.106CMOS Process Flow: Well FormationP-EpiP-WaferN-WellPhotoresistPattern check;.107CMOS Process Flow: Well FormationP-EpiP-WaferN-WellPhotoresistP-well ion implantation, BoronP-WellB+;.108CMOS

26、Process Flow: Well FormationP-EpiP-WaferN-WellPhotoresistP-well ion implantation, BoronP-WellB+;.109CMOS Process Flow: Well FormationP-EpiP-WaferN-WellPhotoresistP-well ion implantation, BoronP-WellB+;.110CMOS Process Flow: Well FormationP-EpiP-WaferN-WellPhotoresistP-well ion implantation, BoronP-W

27、ellB+;.111CMOS Process Flow: Well FormationP-EpiP-WaferN-WellPhotoresistP-well ion implantation, BoronP-WellB+;.112CMOS Process Flow: Well FormationP-EpiP-WaferN-WellPhotoresistP-well ion implantation, BoronP-WellB+;.113CMOS Process Flow: Well FormationP-EpiP-WaferN-WellPhotoresistP-well ion implant

28、ation, BoronP-WellB+;.114CMOS Process Flow: Well FormationP-EpiP-WaferN-WellPhotoresistP-well ion implantation, BoronP-WellB+;.115CMOS Process Flow: Well FormationP-EpiP-WaferN-WellPhotoresistP-well ion implantation, BoronP-WellB+;.116CMOS Process Flow: Well FormationP-EpiP-WaferN-WellPhotoresistP-w

29、ell ion implantation, BoronP-WellB+;.117CMOS Process Flow: Well FormationP-EpiP-WaferN-WellPhotoresistP-well ion implantation, BoronP-WellB+;.118CMOS Process Flow: Well FormationP-EpiP-WaferN-WellPhotoresistStrip photoresistP-WellB+;.119CMOS Process Flow: Well FormationP-EpiP-WaferN-WellPhotoresistS

30、trip photoresistP-WellB+;.120CMOS Process Flow: Well FormationP-EpiP-WaferN-WellPhotoresistStrip photoresistP-WellB+;.121CMOS Process Flow: Well FormationP-EpiP-WaferN-WellPhotoresistStrip photoresistP-WellB+;.122CMOS Process Flow: Well FormationP-EpiP-WaferN-WellPhotoresistStrip photoresistP-WellB+

31、;.123CMOS Process Flow: Well FormationP-EpiP-WaferN-WellStrip photoresistP-WellB+;.124CMOS Process Flow: Well FormationP-EpiP-WaferN-WellP-WellStrip photoresist;.125CMOS Process Flow: Well FormationP-EpiP-WaferN-WellAnneal and drive-inP-Well;.126CMOS Process Flow: Well FormationP-EpiP-WaferN-WellAnn

32、eal and drive-inP-Well;.127CMOS Process Flow: Well FormationP-EpiP-WaferN-WellAnneal and drive-inP-Well;.128CMOS Process Flow: Well FormationP-EpiP-WaferN-WellAnneal and drive-inP-Well;.129CMOS Process Flow: Well FormationP-EpiP-WaferN-WellAnneal and drive-inP-Well;.130CMOS Process Flow: Well Format

33、ionP-EpiP-WaferN-WellAnneal and drive-inP-Well;.131CMOS Process Flow: Well FormationP-EpiP-WaferN-WellAnneal and drive-inP-Well;.132CMOS Process Flow: Well FormationP-EpiP-WaferN-WellAnneal and drive-inP-Well;.133P-EpiP-WaferN-WellCMOS Process Flow: Well FormationAnneal and drive-inP-Well;.134P-EpiP

34、-WaferN-WellCMOS Process Flow: Well FormationStrip screen oxideP-Well;.135P-EpiP-WaferN-WellCMOS Process Flow: STI FormationWafer cleanGrow pad oxideP-Well;.136P-EpiP-WaferN-WellCMOS Process Flow: STI FormationDeposit silicon nitrideP-WellNitride;.137P-EpiP-WaferN-WellCMOS Process Flow: STI Formatio

35、nDeposit silicon nitrideP-WellNitride;.138P-EpiP-WaferN-WellCMOS Process Flow: STI FormationDeposit silicon nitrideP-WellNitride;.139P-EpiP-WaferN-WellCMOS Process Flow: STI FormationDeposit silicon nitrideP-WellNitride;.140P-EpiP-WaferN-WellCMOS Process Flow: STI FormationDeposit silicon nitrideP-W

36、ellNitride;.141P-EpiP-WaferN-WellCMOS Process Flow: STI FormationDeposit silicon nitrideP-WellNitride;.142P-EpiP-WaferN-WellCMOS Process Flow: STI FormationCleanP-WellNitride;.143P-EpiP-WaferN-WellCMOS Process Flow: STI FormationPre-bake, apply primerP-WellNitride;.144P-EpiP-WaferN-WellCMOS Process

37、Flow: STI FormationSpin-on photoresistP-WellNitridePhotoresist;.145P-EpiP-WaferN-WellCMOS Process Flow: STI FormationSoft bakeP-WellPhotoresistNitride;.146P-EpiP-WaferN-WellCMOS Process Flow: STI FormationSoft bakeP-WellPhotoresistNitride;.147P-EpiP-WaferN-WellCMOS Process Flow: STI FormationSoft ba

38、keP-WellPhotoresistNitride;.148P-EpiP-WaferN-WellCMOS Process Flow: STI FormationSoft bakeP-WellPhotoresistNitride;.149P-EpiP-WaferN-WellCMOS Process Flow: STI FormationSoft bakeP-WellPhotoresistNitride;.150P-EpiP-WaferN-WellCMOS Process Flow: STI FormationSoft bakeP-WellPhotoresistNitride;.151P-Epi

39、P-WaferN-WellCMOS Process Flow: STI FormationSoft bakeP-WellPhotoresistNitride;.152P-EpiP-WaferN-WellCMOS Process Flow: STI FormationSoft bakeP-WellPhotoresistNitride;.153Mask 3: Shallow Trench Isolation ;.154Mask 3: Shallow Trench Isolation ;.155Mask 3: Shallow Trench Isolation ;.156Mask 3: Shallow

40、 Trench Isolation ;.157Mask 3: Shallow Trench Isolation ;.158Mask 3: Shallow Trench Isolation ;.159Mask 3: Shallow Trench Isolation ;.160Mask 3: Shallow Trench Isolation ;.161Mask 3: Shallow Trench Isolation ;.162Mask 3: Shallow Trench Isolation ;.163Mask 3: Shallow Trench Isolation ;.164P-EpiP-Wafe

41、rN-WellCMOS Process Flow: STI FormationP-WellPhotoresistShallow trench isolation mask exposeNitrideUV light;.165P-EpiP-WaferN-WellCMOS Process Flow: STI FormationP-WellPhotoresistShallow trench isolation mask exposeNitrideUV light;.166P-EpiP-WaferN-WellCMOS Process Flow: STI FormationP-WellPhotoresi

42、stShallow trench isolation mask exposeNitrideUV light;.167P-EpiP-WaferN-WellCMOS Process Flow: STI FormationP-WellPhotoresistShallow trench isolation mask exposeNitrideUV light;.168P-EpiP-WaferN-WellCMOS Process Flow: STI FormationP-WellPhotoresistShallow trench isolation mask exposeNitrideUV light;

43、.169P-EpiP-WaferN-WellCMOS Process Flow: STI FormationP-WellPhotoresistShallow trench isolation mask exposeNitrideUV light;.170P-EpiP-WaferN-WellCMOS Process Flow: STI FormationP-WellPhotoresistShallow trench isolation mask exposeNitrideUV light;.171P-EpiP-WaferN-WellCMOS Process Flow: STI Formation

44、P-WellPhotoresistPost exposure bakeNitride;.172P-EpiP-WaferN-WellCMOS Process Flow: STI FormationP-WellPhotoresistDevelopNitride;.173P-EpiP-WaferN-WellCMOS Process Flow: STI FormationP-WellPhotoresistDevelopNitride;.174P-EpiP-WaferN-WellCMOS Process Flow: STI FormationP-WellPhotoresistDevelopNitride

45、;.175P-EpiP-WaferN-WellCMOS Process Flow: STI FormationP-WellPhotoresistDevelopNitride;.176P-EpiP-WaferN-WellCMOS Process Flow: STI FormationP-WellPhotoresistDevelopNitride;.177P-EpiP-WaferN-WellCMOS Process Flow: STI FormationP-WellPhotoresistDevelopNitride;.178P-EpiP-WaferN-WellCMOS Process Flow:

46、STI FormationP-WellPhotoresistDevelopNitride;.179P-EpiP-WaferN-WellCMOS Process Flow: STI FormationP-WellPhotoresistHard bakeNitride;.180P-EpiP-WaferN-WellCMOS Process Flow: STI FormationP-WellPhotoresistHard bakeNitride;.181P-EpiP-WaferN-WellCMOS Process Flow: STI FormationP-WellPhotoresistPattern

47、checkNitridePlasma, CF4, CHF3, Ar, .;.182P-EpiP-WaferN-WellCMOS Process Flow: STI FormationP-WellPhotoresistNitrideEtch nitridePlasma, CF4, CHF3, Ar, .;.183P-EpiP-WaferN-WellCMOS Process Flow: STI FormationP-WellPhotoresistNitrideEtch nitridePlasma, CF4, CHF3, Ar, .;.184P-EpiP-WaferN-WellCMOS Proces

48、s Flow: STI FormationP-WellPhotoresistNitrideEtch nitridePlasma, CF4, CHF3, Ar, .;.185P-EpiP-WaferN-WellCMOS Process Flow: STI FormationP-WellPhotoresistNitrideEtch nitridePlasma, CF4, CHF3, Ar, .;.186P-EpiP-WaferN-WellCMOS Process Flow: STI FormationP-WellPhotoresistNitrideEtch nitridePlasma, CF4,

49、CHF3, Ar, .;.187P-EpiP-WaferN-WellCMOS Process Flow: STI FormationP-WellPhotoresistNitrideEtch nitridePlasma, CF4, CHF3, Ar, .;.188P-EpiP-WaferN-WellCMOS Process Flow: STI FormationP-WellPhotoresistNitrideEtch pad oxidePlasma, CF4, CHF3, Ar, .;.189P-EpiP-WaferN-WellCMOS Process Flow: STI FormationP-

50、WellPhotoresistNitrideStrip photoresist;.190P-EpiP-WaferN-WellCMOS Process Flow: STI FormationP-WellPhotoresistNitrideStrip photoresist;.191P-EpiP-WaferN-WellCMOS Process Flow: STI FormationP-WellPhotoresistNitrideStrip photoresist;.192P-EpiP-WaferN-WellCMOS Process Flow: STI FormationP-WellPhotores

51、istNitrideStrip photoresist;.193P-EpiP-WaferN-WellCMOS Process Flow: STI FormationP-WellPhotoresistNitrideStrip photoresist;.194P-EpiP-WaferN-WellCMOS Process Flow: STI FormationP-WellPhotoresistNitrideStrip photoresist;.195P-EpiP-WaferN-WellP-WellCMOS Process Flow: STI FormationStrip photoresistNit

52、rideNitride;.196P-EpiP-WaferN-WellP-WellCMOS Process Flow: STI FormationCleanNitrideNitride;.197P-EpiP-WaferN-WellP-WellCMOS Process Flow: STI FormationEtch siliconNitrideNitridePlasma, HBr, NF3, O2 .;.198P-EpiP-WaferN-WellP-WellCMOS Process Flow: STI FormationEtch siliconNitrideNitridePlasma, HBr,

53、NF3, O2 .;.199P-EpiP-WaferN-WellP-WellCMOS Process Flow: STI FormationEtch siliconNitrideNitridePlasma, HBr, NF3, O2 .;.200P-EpiP-WaferN-WellP-WellCMOS Process Flow: STI FormationEtch siliconNitrideNitridePlasma, HBr, NF3, O2 .;.201P-EpiP-WaferN-WellP-WellCMOS Process Flow: STI FormationEtch silicon

54、NitrideNitridePlasma, HBr, NF3, O2 .;.202P-EpiP-WaferN-WellP-WellCMOS Process Flow: STI FormationEtch siliconNitrideNitridePlasma, HBr, NF3, O2 .;.203P-EpiP-WaferN-WellP-WellCMOS Process Flow: STI FormationWafer cleanNitrideNitride;.204P-EpiP-WaferN-WellP-WellCMOS Process Flow: STI FormationGrow bar

55、rier oxideNitrideNitride;.205P-EpiP-WaferN-WellP-WellCMOS Process Flow: STI FormationNitrideNitrideHDP-CVD USGHigh Density Plasma, SH4, O2, Ar;.206P-EpiP-WaferN-WellP-WellCMOS Process Flow: STI FormationHDP-CVD USGNitrideNitrideUSGHigh Density Plasma, SH4, O2, Ar;.207P-EpiP-WaferN-WellP-WellCMOS Pro

56、cess Flow: STI FormationHDP-CVD USGNitrideNitrideUSGHigh Density Plasma, SH4, O2, Ar;.208P-EpiP-WaferN-WellP-WellCMOS Process Flow: STI FormationHDP-CVD USGNitrideNitrideUSGHigh Density Plasma, SH4, O2, Ar;.209P-EpiP-WaferN-WellP-WellCMOS Process Flow: STI FormationHDP-CVD USGNitrideNitrideUSGHigh D

57、ensity Plasma, SH4, O2, Ar;.210P-EpiP-WaferN-WellP-WellCMOS Process Flow: STI FormationHDP-CVD USGNitrideNitrideUSGHigh Density Plasma, SH4, O2, Ar;.211P-EpiP-WaferN-WellP-WellCMOS Process Flow: STI FormationHDP-CVD USGNitrideNitrideUSGHigh Density Plasma, SH4, O2, Ar;.212P-EpiP-WaferN-WellP-WellCMO

58、S Process Flow: STI FormationHDP-CVD USGNitrideNitrideUSGHigh Density Plasma, SH4, O2, Ar;.213P-EpiP-WaferN-WellP-WellCMOS Process Flow: STI FormationHDP-CVD USGNitrideNitrideUSGHigh Density Plasma, SH4, O2, Ar;.214P-EpiP-WaferN-WellP-WellCMOS Process Flow: STI FormationHDP-CVD USGNitrideNitrideUSGH

59、igh Density Plasma, SH4, O2, Ar;.215P-EpiP-WaferN-WellP-WellCMOS Process Flow: STI FormationHDP-CVD USGNitrideNitrideUSGHigh Density Plasma, SH4, O2, Ar;.216P-EpiP-WaferN-WellP-WellCMOS Process Flow: STI FormationHDP-CVD USGNitrideNitrideUSGHigh Density Plasma, SH4, O2, Ar;.217P-EpiP-WaferN-WellP-We

60、llCMOS Process Flow: STI FormationHDP-CVD USGNitrideNitrideUSGHigh Density Plasma, SH4, O2, Ar;.218P-EpiP-WaferN-WellP-WellCMOS Process Flow: STI FormationHDP-CVD USGNitrideNitrideUSGHigh Density Plasma, SH4, O2, Ar;.219P-EpiP-WaferN-WellP-WellCMOS Process Flow: STI FormationHDP-CVD USGNitrideNitrid