MOS工藝講解優(yōu)質(zhì)PPT課件

1、MOSMOS工藝講解工藝講解2022-4-27silicon substratesourcedraintop oxidemetal connection to sourcemetal connection to gatemetal connection to drainpolysilicon gatedoped siliconfield oxidegate oxide2022-4-27silicon substratefield oxide2022-4-27silicon substrate2022-4-27Shadow on photoresistExposed area of photor

2、esistChrome platedglass maskUltraviolet Lightsilicon substrate2022-4-27非感光區(qū)域非感光區(qū)域silicon substrate感光區(qū)域感光區(qū)域2022-4-27Shadow on photoresistsilicon substratephotoresist2022-4-27silicon substratesilicon substrate腐蝕腐蝕2022-4-27silicon substratesilicon substratefield oxide去膠去膠2022-4-27silicon substratethin

3、oxide layer2022-4-27silicon substrategate oxide2022-4-27silicon substrategateultra-thin gate oxidepolysilicongate2022-4-27silicon substrategateScanning direction of ion beamimplanted ions in active region of transistorsImplanted ions in photoresist to be removed during resist strip. sourcedrainion b

4、eam2022-4-27silicon substrategatesourcedraindoped silicon2022-4-27自自對(duì)對(duì)準(zhǔn)工準(zhǔn)工藝藝在有源區(qū)上覆蓋一層薄氧化層在有源區(qū)上覆蓋一層薄氧化層淀積多晶硅，用多晶硅柵極版圖淀積多晶硅，用多晶硅柵極版圖刻蝕多晶硅刻蝕多晶硅以多晶硅柵極圖形為掩膜板，刻以多晶硅柵極圖形為掩膜板，刻蝕氧化膜蝕氧化膜離子注入離子注入2022-4-27silicon substratesourcedrain2022-4-27silicon substratecontact holesdrainsource2022-4-27silicon substratecon

5、tact holesdrainsource2022-4-27完整的完整的簡(jiǎn)單簡(jiǎn)單MOS晶體管晶體管結(jié)結(jié)構(gòu)構(gòu)silicon substratesourcedraintop oxidemetal connection to sourcemetal connection to gatemetal connection to drainpolysilicon gatedoped siliconfield oxidegate oxide2022-4-27CMOSFETP型型 si subn+n+p+p+2022-4-27VDDP阱工藝阱工藝N阱工藝阱工藝雙阱工藝雙阱工藝P-P+P+N+N+P+N+VSS

6、VOUTVINVDDN-P+P+N+N+P+N+VSSVOUTVINVDDP-P+P+N+N+P+N+VSSVOUTVINN-SiP-SiN-I-SiN+-Si2022-4-27 N-Si-襯底 P-well P-wellP-well N+ N+ P+ P+ N+ P+N-SiP2022-4-27具體步驟如下：具體步驟如下：1生長二氧化硅（濕法氧化）：生長二氧化硅（濕法氧化）： S i - 襯底 S i O2Si(固體固體)+ 2H2O SiO2（固體）（固體）+2H22022-4-272022-4-272P阱光刻：阱光刻：光源光源2022-4-272022-4-27P+P-well3P阱摻雜

7、：阱摻雜：2022-4-272022-4-27電流電流積分積分器器2022-4-27有源區(qū)有源區(qū)：nMOS、PMOS 晶體管形成的區(qū)域晶體管形成的區(qū)域P+N+N+P+N-SiP-wellP-wellP-well 淀積氮化硅淀積氮化硅 光刻有源區(qū)光刻有源區(qū) 場(chǎng)區(qū)氧化場(chǎng)區(qū)氧化 去除有源區(qū)氮化硅及二氧化硅去除有源區(qū)氮化硅及二氧化硅SiO2隔離島隔離島2022-4-27有源區(qū)depositednitride layer有源區(qū)光刻板N型p型MOS制作區(qū)域(漏-柵-源)2022-4-27P-well1. 淀積氮化硅：淀積氮化硅：氧化膜生長（濕法氧化）氧化膜生長（濕法氧化）P-well氮化膜生長氮化膜生長P

8、-well涂膠涂膠P-well對(duì)版曝光對(duì)版曝光有源區(qū)光刻板有源區(qū)光刻板2. 光刻有源區(qū)：光刻有源區(qū)：2022-4-27P-well顯影顯影P-well氮化硅刻蝕去膠氮化硅刻蝕去膠3. 場(chǎng)區(qū)氧化：場(chǎng)區(qū)氧化：P-well場(chǎng)區(qū)氧化（濕法氧化）場(chǎng)區(qū)氧化（濕法氧化）P-well去除氮化硅薄膜及有源區(qū)去除氮化硅薄膜及有源區(qū)SiO22022-4-27P-well去除氮化硅薄膜及有源區(qū)去除氮化硅薄膜及有源區(qū)SiO2P-wellP+N+N+P+N-SiP-well柵極氧化膜柵極氧化膜多晶硅柵極多晶硅柵極 生長柵極氧化膜生長柵極氧化膜 淀積多晶硅淀積多晶硅 光刻多晶硅光刻多晶硅2022-4-27P-well生長柵

9、極氧化膜生長柵極氧化膜P-well淀積多晶硅淀積多晶硅P-well涂膠光刻涂膠光刻多晶硅光刻板多晶硅光刻板P-well多晶硅刻蝕多晶硅刻蝕2022-4-27掩膜4 ：P+區(qū)光刻區(qū)光刻 1、P+區(qū)光刻區(qū)光刻 2、離子注入、離子注入B+，柵區(qū)有多晶硅做掩蔽，柵區(qū)有多晶硅做掩蔽， 稱為硅柵自對(duì)準(zhǔn)工藝。稱為硅柵自對(duì)準(zhǔn)工藝。 3、去膠、去膠P-wellP+N+N+P+N-SiP-wellP-wellP+P+2022-4-27P-wellP+P-wellP+P+硼離子注入硼離子注入去膠去膠2022-4-27掩膜5 ：N+區(qū)光刻區(qū)光刻 1、N+區(qū)光刻區(qū)光刻 2、離子注入、離子注入P+，柵區(qū)有多晶硅做掩蔽，柵

10、區(qū)有多晶硅做掩蔽， 稱為硅柵自對(duì)準(zhǔn)工藝。稱為硅柵自對(duì)準(zhǔn)工藝。 3、去膠、去膠P-wellP+N+N+P+N-SiP-wellP-wellP+P+N+N+2022-4-27P-wellN+P-wellP+P+磷離子注入磷離子注入去膠去膠P+P+N+N+2022-4-27掩膜6 ：光刻接觸孔：光刻接觸孔1、淀積、淀積PSG.2、光刻接觸孔、光刻接觸孔3、刻蝕接觸孔、刻蝕接觸孔P-wellP+N+N+P+N-SiP-wellP-wellP+P+N+N+磷硅玻璃（磷硅玻璃（PSG)2022-4-27掩膜6 ：光刻接觸孔：光刻接觸孔P-wellP+P+N+N+淀積PSGP-wellP+P+N+N+光刻接觸孔P-wellP+P+N+N+刻蝕接觸孔P-wellP+P+N+N+去膠2022-4-272022-4-27掩膜7 ：光刻鋁線：光刻鋁線1、淀積鋁、淀積鋁.2、光刻鋁、光刻鋁3、去膠、去膠P-wellP-wellP+P+N+N+2022-4-27P-wellP+P+N+N+鋁線鋁線PSG場(chǎng)氧場(chǎng)氧柵極氧化膜柵極氧化膜P+區(qū)區(qū)P-wellN-型硅極板型硅極板多晶硅多晶硅N+區(qū)區(qū)20