世界光伏產業(yè)鏈各環(huán)節(jié)主要制造商和

1、世界光伏產業(yè)鏈各環(huán)節(jié)主要制造商和分布一覽太陽能產業(yè)示意圖太陽能產業(yè)示意圖晶硅棚能電砂PofyslllconWafer Solar Cell Sotar Module Systems世界光伏產業(yè)謹各環(huán)節(jié)主要険商和分布一覽光伏組件疑®ffl集成HemlockScan WaferEjSJ 巫BTukuyama京瓷京瓷京瓷WackerDeutsche SolarBP SolarShell SolarBP SolarMEMCPV CrystaloxQ-Cdls二菱電子Shell SolarAsiMIM.SeteK二養(yǎng)電子三洋三洋zzSShell SolarShell Solarrsofoton

2、RWESOSBP Solar三洋MSKATS Group! I!RWE SchottRWE SchottBP SoalrCarmanah總10余家晶;ifcMHIsofoton尚德太陽能ConergySUMCO SolarRWE Schott西門子總30家左右總70家左右總A2QU家總沙叩家數據來灑：新材料在線，如050中國高純多晶硅材料生產和投資現狀一覽表中國高純多晶硅材料生產和投資現狀一覽表（含已有產能和在建、擬建項目）中國高純多晶硅材料生產和投資現狀一覽表中國高匏多晶硅材科生產和投資現狀一覽表企業(yè)名稱目前產能 （噸）新擴產 后產能（噸）四川新光確業(yè)科技 能公司01300峨眉半導障材料廠，

3、 引進部分俄羅斯技術 和國夕卜設備2007年初洛陽中硅高科技 能公司30期 300 二期 3000洛陽單晶硅公司.中 國有低工程設計總院期005年底 二期2007年05000僦羅斯稀有金屬研究 院籌建益南技 郁K公司0期 3000 總一萬噸引進德國生產鮭技術期投資25 匕202年底疝蘇噸大半導體 豹蘇頤公司0期15U口噸 總3000噸美國 Hemlock總投掘孔億，期2007年遼市01000引進美國生產線技術投盜¥11億捋商當中四川趙磊實業(yè)01000與美國公司合作引進 技術產品外銷模式籌建蛾眉半導體栩畀廠100220自主技術20時年新拇料在線 2006.04國外硅片供應商大全國外硅片

4、供應商大全（轉載） http:/www.crystal-http:/www.el- http:/www.fcm- http:/www.silicon- http:/www.semicor http:/www.purewafer .comhttp:/www.rasa.co.jp硅片行業(yè)術語大全Acceptor - An element, such as boron, indium, and gallium used to create a free hole in a semiconductor . The acceptor atoms are required to have one less

5、 valence electron than the semiconductor .受主 - 一種用來在半導體中形成空穴的元素，比如硼、銦和鎵。受主原子必須比半導體元素少一價電子Alignment Precision - Displacement of patterns that occurs during the photolithography process.套準精度 - 在光刻工藝中轉移圖形的精度。Anisotropic - A process of etching that has very little or no undercutting各向異性 - 在蝕刻過程中，只做少量或不做

6、側向凹刻。Area Contamination - Any foreign particles or material that are found on the surface of a wafer. Thisis viewed as discolored or smudged, and it is the result of stains, fingerprints, water spots, etc.沾污區(qū)域 - 任何在晶圓片表面的外來粒子或物質。由沾污、手印和水滴產生的污染。Azimuth, in Ellipsometry - The angle measured between th

7、e plane of incidence and the major axisof the ellipse.橢圓方位角 - 測量入射面和主晶軸之間的角度。Backside - The bottom surface of a silicon wafer. (Note: This term is not preferred; instead, use ,back surface?.）背面 - 晶圓片的底部表面。 （注：不推薦該術語，建議使用 “背部表面 ”）, which supportsBase Silicon Layer - The silicon wafer that is located

8、underneath the insulator layer the silicon film on top of the wafer .底部硅層 - 在絕緣層下部的晶圓片，是頂部硅層的基礎。Bipolar - Transistors that are able to use both holes and electrons as charge carriers. 雙極晶體管 - 能夠采用空穴和電子傳導電荷的晶體管。Bonded Wafers - Two silicon wafers that have been bonded together by silicon dioxide, whic

9、h acts as an insulating layer.綁定晶圓片 - 兩個晶圓片通過二氧化硅層結合到一起，作為絕緣層。Bonding Interface - The area where the bonding of two wafers occurs. 綁定面 - 兩個晶圓片結合的接觸區(qū)。Buried Layer - A path of low resistance for a current moving in a device. Many of these dopants are antimony and arsenic.埋層 - 為了電路電流流動而形成的低電阻路徑，攙雜劑是銻和砷

10、。Buried Oxide Layer (BOX) - The layer that insulates between the two wafers. 氧化埋層 (BOX) - 在兩個晶圓片間的絕緣層。Carrier - Valence holes and conduction electrons that are capable of carrying a charge through a solid surface in a silicon wafer.載流子 - 晶圓片中用來傳導電流的空穴或電子。Chemical-Mechanical Polish (CMP) - A process

11、of flattening and polishing wafers that utilizes both chemical removal and mechanical buffing. It is used during the fabrication process. 化學-機械拋光 (CMP) - 平整和拋光晶圓片的工藝，采用化學移除和機械拋光兩種方式。此工藝在前道工藝中使 用。Chuck Mark - A mark found on either surface of a wafer, caused by either a robotic end effectorchuck, or

12、a wand.卡盤痕跡 - 在晶圓片任意表面發(fā)現的由機械手、卡盤或托盤造成的痕跡。Cleavage Plane - A fracture plane that is preferred. 解理面 - 破裂面Crack - A mark found on a wafer that is greater than 0.25 mm in length. 裂紋 - 長度大于 0.25 毫米的晶圓片表面微痕。beCrater - Visible under diffused illumination, a surface imperfection on a wafer that can distingu

13、ished individually.微坑 - 在擴散照明下可見的，晶圓片表面可區(qū)分的缺陷。Conductivity (electrical)- A measurement of how easily charge carriers can flow throughout amaterial.傳導性(電學方面) - 一種關于載流子通過物質難易度的測量指標 。Conductivity Type -The type of charge carriers in a wafer, such as“- tNype ” and -“tyPpe ” .導電類型 - 晶圓片中載流子的類型， N 型和 P 型。

14、Contaminant, Particulate (see light point defect) 污染微粒 (參見光點缺陷)Contamination Area - An area that contains particles that can negatively affect the characteristics of a silicon wafer.沾污區(qū)域 - 部分晶圓片區(qū)域被顆粒沾污，造成不利特性影響。Contamination Particulate - Particles found on the surface of a silicon wafer.沾污顆粒 - 晶圓片表

15、面上的顆粒。Crystal Defect - Parts of the crystal that contain vacancies and dislocations that can have an impact on a circuit?s electrical performance.晶體缺陷 - 部分晶體包含的、會影響電路性能的空隙和層錯。Crystal Indices (see Miller indices) 晶體指數 (參見米勒指數)Depletion Layer - A region on a wafer that contains an electrical field tha

16、t sweeps out charge carriers.耗盡層 - 晶圓片上的電場區(qū)域，此區(qū)域排除載流子。Dimple - A concave depression found on the surface of a wafer that is visible to the eye under the correct lighting conditions.表面起伏 - 在合適的光線下通過肉眼可以發(fā)現的晶圓片表面凹陷。Donor - A contaminate that has donated extra “ free ” electrons, thus making a wafer-Typ

17、e ”“. N施主 - 可提供“自由”電子的攙雜物，使晶圓片呈現為 N 型。Dopant - An element that contributes an electron or a hole to the conduction process, thus altering the conductivity. Dopants for silicon wafers are found in Groups III and V of the Periodic Table of the Elements.攙雜劑 - 可以為傳導過程提供電子或空穴的元素，此元素可以改變傳導特性。晶圓片攙雜 劑可以在元素周

18、期表 的 III 和 V 族元素中發(fā)現。Doping - The process of the donation of an electron or hole to the conduction process by a dopant. 摻雜 - 把攙雜劑摻入半導體，通常通過擴散或離子注入工藝實現。Edge Chip and Indent - An edge imperfection that is greater than 0.25 mm. 芯片邊緣和縮進 - 晶片中不完整的邊緣部分超過 0.25 毫米。Edge Exclusion Area - The area located betwe

19、en the fixed quality area and the periphery of a wafer (This varies according to the dimensions of the wafer.)邊緣排除區(qū)域 - 位于質量保證區(qū)和晶圓片外圍之間的區(qū)域。 (根據晶圓片的尺寸不同而有所不同。 )Edge Exclusion, Nominal (EE) - The distance between the fixed quality area and the periphery of a wafer .名義上邊緣排除 (EE) - 質量保證區(qū)和晶圓片外圍之間的距離。orEdg

20、e Profile - The edges of two bonded wafers that have been shaped either chemically mechanically.邊緣輪廓 - 通過化學或機械方法連接起來的兩個晶圓片邊緣。Etch - A process of chemical reactions or physical removal to rid the wafer of excess materials. 蝕刻 - 通過化學反應或物理方法去除晶圓片的多余物質。Fixed Quality Area (FQA) - The area that is most ce

21、ntral on a wafer surface. 質量保證區(qū) (FQA) - 晶圓片表面中央的大部分。Flat - A section of the perimeter of a wafer that has been removed for wafer orientation purposes. 平邊 - 晶圓片圓周上的一個小平面，作為晶向定位的依據。Flat Diameter - The measurement from the center of the flat through the center of the wafer to the opposite edge of the w

22、afer. (Perpendicular to the flat)平口直徑 - 由小平面的中心通過晶圓片中心到對面邊緣的直線距離。Four-Point Probe - Test equipment used to test resistivity of wafers. 四探針 - 測量半導體晶片表面電阻的設備。Furnace and Thermal Processes - Equipment with a temperature gauge used for processing wafers.A constant temperature is required for the process

23、. 爐管和熱處理 - 溫度測量的工藝設備，具有恒定的處理溫度。Front Side - The top side of a silicon wafer. (This term is not preferred; use front surface instead.)正面 - 晶圓片的頂部表面(此術語不推薦，建議使用 “前部表面 ”)。Goniometer - An instrument used in measuring angles. 角度計 - 用來測量角度的設備。Gradient, Resistivity (not preferred; see resistivity variation

24、) 電阻梯度 (不推薦使用，參見 “電阻變化 ”)forGroove - A scratch that was not completely polished out. 凹槽 - 沒有被完全清除的擦傷。Hand Scribe Mark - A marking that is hand scratched onto the back surface of a wafer identification purposes.手工印記 - 為區(qū)分不同的晶圓片而手工在背面做出的標記。Haze - A mass concentration of surface imperfections, often gi

25、ving a hazy appearance to the wafer 霧度 - 晶圓片表面大量的缺陷，常常表現為晶圓片表面呈霧狀。Hole - Similar to a positive charge, this is caused by the absence of a valence electron. 空穴 - 和正電荷類似，是由缺少價電子引起的。Ingot - A cylindrical solid made of polycrystalline or single crystal silicon from which wafers are cut. 晶錠 - 由多晶或單晶形成的圓柱

26、體，晶圓片由此切割而成。Laser Light-Scattering Event - A signal pulse that locates surface imperfections on a wafer . 激光散射 - 由晶圓片表面缺陷引起的脈沖信號。Lay - The main direction of surface texture on a wafer . 層 - 晶圓片表面結構的主要方向。Light Point Defect (LPD) (Not preferred; see localized light-scatterer) 光點缺陷 (LPD) (不推薦使用，參見 “局部光

27、散射 ”)Lithography - The process used to transfer patterns onto wafers. 光刻 - 從掩膜到圓片轉移的過程。Localized Light-Scatterer - One feature on the surface of a wafer , such as a pit or a scratch that scatters light. It is also called a light point defect.局部光散射 - 晶圓片表面特征，例如小坑或擦傷導致光線散射，也稱為光點缺陷。Lot - Wafers of simi

28、lar sizes and characteristics placed together in a shipment. 批次 - 具有相似尺寸和特性的晶圓片一并放置在一個載片器內。Majority Carrier - A carrier , either a hole or an electron that is dominant in a specific region, such as electrons in an N-Type area.多數載流子 - 一種載流子，在半導體材料中起支配作用的空穴或電子，例如在 N 型中是電子。Mechanical Test Wafer - A sil

29、icon wafer used for testing purposes. 機械測試晶圓片 - 用于測試的晶圓片。Microroughness - Surface roughness with spacing between the impurities with a measurement ofless than 100m.微粗糙 - 小于 100 微米的表面粗糙部分。Miller Indices, of a Crystallographic Plane - A system that utilizes three numbers to identify plan orientation i

30、n a crystal.Miller 索指數 - 三個整數，用于確定某個并行面。這些整數是來自相同系統(tǒng)的基本向量。Minimal Conditions or Dimensions- The allowable conditions for determining whether or not awafer is considered acceptable.最小條件或方向 - 確定晶圓片是否合格的允許條件。Minority Carrier - A carrier, either a hole or an electron that is not dominant in a specific re

31、gion,such as electrons in a P-Type area.少數載流子 - 在半導體材料中不起支配作用的移動電荷，在 P 型中是電子，在 N 型中是空穴。Mound - A raised defect on the surface of a wafer measuring more than 0.25 mm. 堆垛 - 晶圓片表面超過 0.25 毫米的缺陷。Notch - An indent on the edge of a wafer used for orientation purposes. 凹槽 - 晶圓片邊緣上用于晶向定位的小凹槽。Orange Peel - A

32、roughened surface that is visible to the unaided eye. 桔皮 - 可以用肉眼看到的粗糙表面Orthogonal Misorientation - 直角定向誤差 -Particle - A small piece of material found on a wafer that is not connected with it. 顆粒 - 晶圓片上的細小物質。Particle Counting - Wafers that are used to test tools for particle contamination. 顆粒計算 - 用來測

33、試晶圓片顆粒污染的測試工具。Particulate Contamination - Particles found on the surface of a wafer. They appear as bright pointswhen a collineated light is shined on the wafer.顆粒污染 - 晶圓片表面的顆粒。Pit - A non-removable imperfection found on the surface of a wafer.深坑 - 一種晶圓片表面無法消除的缺陷。Point Defect - A crystal defect that

34、 is an impurity, such as a lattice vacancy or an interstitial atom. 點缺陷 - 不純凈的晶缺陷，例如格子空缺或原子空隙。Preferential Etch - 優(yōu)先蝕刻 -strictPremium Wafer - A wafer that can be used for particle counting, measuring pattern resolution inthe photolithography process, and metal contamination monitoring. This wafer ha

35、s very specifications for a specific usage, but looser specifications than the prime wafer.測試晶圓片 - 影印過程中用于顆粒計算、測量溶解度和檢測金屬污染的晶圓片。對于具體應用該晶圓片有嚴格 的要求，但是要比主晶圓片要求寬松些。Primary Orientation Flat - The longest flat found on the wafer.主定位邊 - 晶圓片上最長的定位邊。Process Test Wafer - A wafer that can be used for processes

36、 as well as area cleanliness. 加工測試晶圓片 - 用于區(qū)域清潔過程中的晶圓片。Profilometer - A tool that is used for measuring surface topography.表面形貌劑 - 一種用來測量晶圓片表面形貌的工具。Resistivity (Electrical) - The amount of difficulty that charged carriers have in moving throughout material.電阻率(電學方面) - 材料反抗或對抗電荷在其中通過的一種物理特性。Required -

37、 The minimum specifications needed by the customer when ordering wafers.必需 - 訂購晶圓片時客戶必須達到的最小規(guī)格。Roughness - The texture found on the surface of the wafer that is spaced very closely together 粗糙度 - 晶圓片表面間隙很小的紋理。Saw Marks - Surface irregularities鋸痕 - 表面不規(guī)則。Scan Direction - In the flatness calculation,

38、the direction of the subsites.掃描方向 - 平整度測量中，局部平面的方向。Scanner Site Flatness - 局部平整度掃描儀 -Scratch - A mark that is found on the wafer surface.擦傷 - 晶圓片表面的痕跡。Secondary Flat - A flat that is smaller than the primary orientation flat. The position of this flat determines what type the wafer is, and also the

39、 orientation of the wafer.第二定位邊 - 比主定位邊小的定位邊，它的位置決定了晶圓片的類型和晶向。Shape - 形狀 -Site - An area on the front surface of the wafer that has sides parallel and perpendicular to the primary orientation flat. (This area is rectangular in shape) 局部表面 - 晶圓片前面上平行或垂直于主定位邊方向的區(qū)域。Site Array - a neighboring set of sites 局部表面系列 - 一系列的相關局部表面。Site Flatness -局部平整 -Slip - A defect pattern of small ridges found on the surface of the wafer.劃傷 - 晶圓片表面上的小皺造成的缺陷。Smudge - A defect or contamination found on the wafer caused by fingerprints.污跡 - 晶圓片上指紋造成的缺陷或污染。Sori -Striation - Defects or contaminations found in the s