GPP制程簡介-雙面光刻

1、GPP Process Introduction (Pt & SIPOS)GPP制程簡介制程簡介Std GPP Process FlowWafer CleanBoron DiffusionGrid EtchingPR StripSIPOS & MTO2nd Photo1st Ni PlatingNi Sintering2nd Ni PlatingAu PlatingPG Burn offGlass FiringLTO3rd PhotoPG CoatingRCA CleanPR StripContact EtchNon SIPOSPhos. Pre-DepHF SoakSand

2、BlastingPt DiffusionSand Blasting1st PhotoWafer Clean (晶片清洗晶片清洗)NPhos. Pre-Deposition ( 磷預(yù)沉積磷預(yù)沉積 )N晶片N+磷Sand Blasting (吹砂吹砂)N晶片N+磷在此面吹砂Boron Diffusion (硼硼擴(kuò)散擴(kuò)散 )N晶片N+P+磷硼Sand Blasting (吹砂吹砂)N晶片N+P+磷硼單面吹砂Pt Diffusion (鉑擴(kuò)鉑擴(kuò))N晶片N+P+磷硼Pt鉑Sand Blasting (吹砂吹砂)N晶片N+P+磷硼雙面吹砂1st Photo (一次黃光一次黃光雙面光刻雙面光刻)晶片NN+P

3、+光阻光阻開槽去背面標(biāo)記線SB-402BG-403/SGrid Pre-Etching (溝槽溝槽標(biāo)記標(biāo)記預(yù)預(yù)蝕刻蝕刻)晶片NN+P+光阻Pr-Coating (背面涂膠背面涂膠)晶片NN+P+光阻補(bǔ)光阻保護(hù)Grid Etching (溝槽溝槽蝕刻蝕刻)晶片NN+P+光阻PR Strip (光阻去除光阻去除)NN+P+RCA Clean (RCA 清洗清洗)晶片NN+P+SIPOS & MTO (SIPOS沉積沉積)晶片NN+P+SIPOSSIPOS2nd Photo (2次黃光次黃光)NN+P+SIPOSSIPOSPGBG-401A(高光強(qiáng)型)或 BG-401ABG-403或 BG-

4、401ABG-401A(高光強(qiáng)型)或 BG-401ABG-403BG-401A(高光強(qiáng)型)或 BG-401APG Development (PG顯影顯影)NN+P+SIPOSSIPOSPGGlass Firing (玻璃燒結(jié)玻璃燒結(jié))NN+P+SIPOSSIPOSGlassLTO (低溫氧化層沉積低溫氧化層沉積)NN+P+SIPOSSIPOSGlassSiO23rd Photo (三次黃光三次黃光)NN+P+SIPOSSIPOSGlassSiO2PRBG-403或 BG-401ABG-401A(高光強(qiáng)型)Contact Etch (接觸面蝕刻接觸面蝕刻)NN+P+SIPOSGlassSiO2PRPR Strip (光阻去除光阻去除)NN+P+SIPOSGlassSiO21st Ni Plating (一次鍍鎳一次鍍鎳)NN+P+SIPOSGlassSiO2NiNi Sintering (鎳燒結(jié)鎳燒結(jié))NN+P+SIPOSGlassSiO2Ni2nd Ni Plating (二次鍍鎳二次鍍鎳)NN+P+SIPOSGlassSiO2NiGold Plating