切片缺點模式說明課件

切片缺點模式說明

Cross-sectionDefectMode內容介紹(CONTENT)1.通孔(Throughvia)1.1.熱應力前(Beforethermalstresstest)1.1.1.孔銅厚度/穿孔力(Copperthickness/Throwingpower)1.1.2.鍍銅斷裂(Platingcrack)1.1.3.孔破(Platingvoid)1.1.4.壓合空泡(Airbubble)1.1.5.燈蕊效應(Wicking)1.1.6.回蝕(Etchback)1.1.7.反回蝕(Negativeetchback)1.1.8.釘頭(NailHead)1.1.9.ICD-膠渣(Smear)1.1.10.ICD-內層銅分離(Innerlayerconnectionseparation)1.1.11.孔壁粗糙度(Holewallroughness)內容介紹(CONTENT)1.2.熱應力後(Afterthermalstresstest)1.2.1.孔壁浮離(Pullaway)1.2.2.樹脂內縮(Resinrecession)1.2.3.內層連接不良(InnerlayerConnectionDefect)1.2.4.鍍銅斷裂(Crack)2.盲孔(Blindvia)2.1.一般盲孔2.1.1.銅厚(Copperthickness)2.1.2.碗型孔(BarrelShaped)2.1.3.蟹腳(Crabfeet)2.1.4.雷射膠渣(Lasersmear)2.1.5.跳鍍(Stepplating)2.1.6.孔破(bubblevoid)2.2.電鍍填孔(Fillviabyplating)2.2.1.填孔凹陷(Dimple)2.2.2.空泡(Airbubble)1.1.1.a孔銅銅厚：HolecopperthicknessCriteria:Min.0.8Mil(↑)1234561量測孔徑，以確保切片準確性1.1.1.b面銅銅厚：Surfacecopperthickness791081.1.1.c穿孔力：ThrowingPower通孔銅厚之最小值面銅平均值(不含基材銅)穿孔力=ThrowingPower=MinimumofholecopperthicknessAverageofsurfacecopperthicknessSpecification:P.Pthickness<45MilT/P=90%(↑)45Mil≦P.P≦75MilT/P=80%(↑)P.Pthickness>75MilT/P=75%(↑)1.1.1.c穿孔力：ThroughPower1.1.3.孔破：PlatingvoidCriteria:NotAllowedNG1.1.5.燈蕊效應(Wicking)AcceptRejectSpec.:<3mil1.1.7.反回蝕(Negativeetchback)AcceptRejectSpec.:<1mil1.1.8.釘頭(NailHead)AcceptRejectABSpec.:B/A≦1.7for1oz

B/A≦2.0for0.5oz1.1.9.ICD-膠渣(Smear)膠渣造成ICD(SmearcausesICD)NotAllowed1.1.10.ICD-內層銅分離(Innerplaneseparation)RejectReject1.1.11.孔壁粗糙度(Holewallroughness)Spec.:<1.4mil1.2.2.樹脂內縮(Resinrecession)(afterT/Stest)Spec.:Width:Max.3milNolonger20%ofcumulativebasematerialthickness.Spec.:最大：3.0MIL，且內縮部份之長度＜板厚×20％

1.2.2.樹脂內縮計算方式

(Resinrecessionmeasuring)單位(mil)孔壁長67.24樹脂內縮3.242.35.54比例計算:5.54/67.24=8.23%＜20%(PASS)1.2.4.鍍銅斷裂(Crack)

(afterT/Stest)RejectReject2.1.1.銅厚(Copperthickness)2.1.3.蟹腳(Undercut)UnderCutMax.10umSpec.:<10um2.1.4.雷射膠渣(Smear)Reject2.1.5.跳鍍(Stepplating)2.2.1.填孔：DimpleDimple≤10μmCriteria:Max.10μm

量測數(shù)據(jù)(measuring):1.Dimple2.P.P厚度(P.P.t