認識Mask以及其制作流程

認識Mask以及簡要的制作流程TMTheRoleofMaskinICIndustry

DESIGNMASKWAFERTESTINGASSEMBLYHowDoesMaskWorkinWaferFAB

StepperHowDoesMaskWorkinWaferFAB

ScannerRawMaterialofMask

BlankBIM(binarymask)PSM(phaseshiftmask)A.KRF-PSMB.ARF-PSMSizeofBlank

5inch90mil(5009)5inch180mil(5018)6inch120mil(6012)6inch250mil(6025)7inch250mil(7015)WhatkindofmaskSMICFABsuse?BlankComponent

BinaryBlankPSMBlankPhotoResist(3K,4K,4650A)CrO&Chrome(~1050A,700A)QuartzPhotoResist(2K,3K,4KA)CrO&Chrome(1000,~550A)QuartzMoSiFilmPhotoResistOpaqueMetalFilmSubstratePhotoResistOpaqueMetalFilm

PhaseShiftLayer

SubstrateBlankQzCharacteristic

RigidityHeatExpansion(ppm/oC)MaterialSodaliteSilicon-BorideQuartzRigidity540657615MaterialSodalimeSilicon-BorideQuartzCoefficientBlankQzCharacteristic

OpticsCharacterTransmission(%)200300400020406080100QuartzSilicon-BorideSodaLimeWaveLength(nm)That’swhywechooseQuartzasthesubstrateofblankHowtoTransferDesigntoMask?

WriterProcessMetrologyVis-InspectClean/MountAIMSRepair1stInspectThr-InspectSTARlightShippingDevelopStripEtchFront-endProcess

BlankconfigurationPhoto-resistCrfilmQuartzExposurePhoto-resistdevelopWetetchPhoto-resiststripAEIASIRe-Etch?AEI:AfterEtchCDmeasureASI:AfterStripCDmeasureStep1Step2Step3Step4Step6Step5Step7Front-endProcess

DryprocessResistCrQzH+H+H+H+H+H+H+EBEBEBH+H+H+H+H+H+H+Exposure

(EB1,EB2,EB3

DUV,LB5,LB6)PEB(PostExposureBake)SFB2500,APB5500PAGAcidgenerationAciddiffusionDeprotectionreactionDevelopment

(SFD2500,ASP5500)H+DryEtch(Gen3,Gen4)

AEI,Re-etchStrip,ASIPellicleComponent

PellicleMembraneMaterialWaveLengthN.C.365nm(I-line)C.E.365,248nm(I-line,DUV)F.C.193nm(ArF)Frame(AluminumAlloy)AdhesiveTapePellicleMembrane(2~5um)PellicleFrameDoubleSideAdhesiveTapeCrGlassWhatPellicleDo?

TopContaminantObjectPlanePellicleFilmBottomContaminantContaminantonPatternPlaneLenSystemUnfocusedTopContaminantImageUnfocusedBottomContaminantImageImagePlaneFocusedContaminantImageonWaferMaskPatternWaferSurfaceLightParticleImmunityControl

Particlesize(D)V.S.MinimumStand-off(T)T=(4M/N.A.)DMMagnificationN.A.NumericalApertureoftheLensForglasssideparticle,T=2.3mmD1T1T2D2MaskQualityControl

C.D.DefectRegistrationCD(criticaldimension)measurementDefectTypeOpaquespotParticleProtrusionIntrusionContaminationPinholeMissingARGlassfractureBreakGlassseedBridgeSolventspotHardDefectSoftDefectMissSizeHowtoDoMaskDefectInspect

MaskLayoutExemplification

Normal

++++FiducialTestKeyTestLineMainPatternScribeLineGlobalMarkQACellBarcodeMulti-Chip

++++FiducialTestKeyTestLineScribeLineGlobalMarkQACell++AChipBChipCChipDChip+ThePrinciple

ofSTARlightInspectTheModelinSMICMaskShop(SL3UV)canonlydetectpatternsideSTAR:SynchronousTrans.AndReflectedWhatisRegistration

RegistrationResultExemplification

Mask: 6”,t=0.25” QuartzMeasurementArea:

67.2*92.2mmArray:

8*10VariationQuantity:[nm]

Max minX 7.2 0.0Y 22.0 0.2HowDoesOPCWork?

comparisondesign/maskWithOPCwaferOPCPatternonMask

0.64umLinePattern0.25umSeriffor0.6umContact0.57LinePattern0.27umassistantbarfor0.72umLineOver-allflowCustomerFTPN