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bq27530-Track?電量計查詢樣品:bq27530-特

阻抗(ImpedanceTrack)技術帶來了更長 –溫度水平充電低值感應電阻器（5mΩ至 )

?(CSP)封裝及更短代工生產(OEM)設計周 應用范智 MP3或多(TI的bq27530-G1系統(tǒng)側鋰離子電池管理單元是一款微控制器外設，此外設提供針對單節(jié)鋰離子電池組(%)，續(xù)航時間（分鐘），電池電壓(mV)，溫度(°C)以及健康狀況(%)等信息。通過bq27530-G1PACK+P+)，PACKP(T連接至可拆卸電池組或嵌Pleasebeawarethatanimportantnoticeconcerningavailability,standardwarranty,anduseincriticalapplicationsofTexasInstrumentssemiconductorproductsanddierstheretoappearsattheendofthisdatasheet.Copyright?2012,TexasInstrumentsImpedanceTrack,Nano areCopyright?2012,TexasInstrumentsPRODUCTIONDATAinformationiscurrentasofpublicationdate.ProductsconformtospecificationsperthetermsoftheInstrumentsstandardwarranty.Productionprocessingdoes EnglishDataSheet:necessarilyincludetestingofallThesedeviceshavelimitedbuilt-inESDprotection.TheleadsshouldbeshortedtogetherorthedevicecedinconductivefoamduringstorageorhandlingtopreventelectrostaticdamagetotheMOSgates.TYPICALACACAdapterWirelessSYSTEMSingleCellLi-IonBatteryBQ27530-TPROTECTION DEVICEAVAILABLEPARTTAPEandbq27530YZFR-CSP-–40°Ctobq27530YZFT-Refertothe mandtoconfirmthefirmwareForthemostcurrentpackageandorderinginformation,seethePackageOptionAddendumattheendofthis,orseetheTIwebsiteatTHERMALTHERMALbq27530-YZF(15Junction-to-ambientthermalJunction-to-case(top)thermalJunction-to-boardthermalJunction-to-topcharacterization1Junction-to-boardcharacterizationJunction-to-case(bottom)thermalFormoreinformationabouttraditionalandnewthermalmetrics,seetheICPackageThermalMetricsapplicationreport,PINASSIGNMENTANDPACKAGE(TOP (BOTTOMEPinIndex DmETable1.PINoginputpinconnectedtotheinternalcoulombcounterwhereSRPisnearestthePACK–connection.Connectto5-m?to20-m?senseresistor.oginputpinconnectedtotheinternalcoulombcounterwhereSRNisnearesttheVssconnection.Connectto5-m?to20-m?senseresistor.C1,PDevicePRegulatoroutputandbq27530-G1power.Decouplewith1μFceramiccapacitortoPRegulatorinput.Decouplewith0.1μFceramiccapacitortoSOCstateinterruptsoutput.Generatesapulseasdescribedinbq27530-G1TechnicalReferenceManual.Opendrainoutput.OBatteryChargerclockoutputlineforchipsetcommunication.Push-pulloutput.Note:CEhasaninternalESDprotectiondiodeconnectedtoREGIN. mendmaintainingVCE≤VREGINunderallconditions.IChipEnable.InternalLDOisdisconnectedfromREGINwhendrivenICell-voltagemeasurementinput.ADC mend4.8VumforconversionISlaveI2Cserialcommunicationsclockinputlineforcommunicationwithsystem(Master).Open-drainI/O.Usewith10k?pull-upresistor(typical).SlaveI2Cserialcommunicationsdatalineforcommunicationwithsystem(Master).Open-drainI/O.Usewith10k?pull-upresistor(typical).BatteryChargerdatalineforchipsetcommunication.Push-pullPackthermistorvoltagesense(use103AT-typethermistor).ADCBattery-insertiondetectioninput.Powerpinforpackthermistornetwork.Thermistor-multiplexercontrolpin.Usewithpull-upresistor>1M?(1.8M?typical).I/O=Digitalinput/output,IA=oginput,P=PowerELECTRICAL UMoveroperating-airtemperaturerange(unlessotherwiseRegulatorinput–0.3toV–0.3to6.0VCEinput–0.3toVREGIN+VSupplyvoltage–0.3toVOpen-drainI/Opins(SDA,SCL,–0.3toVBATinput–0.3toV–0.3to6.0VInputvoltagerangetoallotherpins(BI/TOUT,TS,SRP,SRN,BSDA,BSCL)–0.3toVCC+VHuman-bodymodel(HBM),BATHuman-bodymodel(HBM),allother2Operating-airtemperature–40toStoragetemperature–65toStressesbeyondthoselistedunder"absolute umratings"maycausepermanentdamagetothedevice.Thesearestressratingsonly,andfunctionaloperationofthedeviceattheseoranyotherconditionsbeyondthoseindicatedunder" mendedoperatingconditions"isnotimplied.Exposuretoabsolute- um-ratedconditionsforextendedperiodsmayaffectdevicereliability.Conditionnottoexceed100hoursat25°CMENDEDOPERATINGTA=-40°Cto85°C,VREGIN=VBAT=3.6V(unlessotherwiseTESTSupplyNooperatingVNoFLASHExternalinputcapacitorforinternalLDObetweenREGINandVSSNominalcapacitorvaluesspecified.menda5%ceramicX5RcapacitorlocatedclosetotheExternaloutputcapacitorforinternalLDObetweenVCCandVSS Power-upcommunicationSUPPLYTA=25°CandVREGN=VBAT=3.6V(unlessotherwiseTEST ICCNormaloperating-modeFuelgaugeinNORMALmode.ILOAD>SleepCurrentISLP+Sleep+operatingmodeFuelgaugeinSLEEP+mode.ILOAD<SleepCurrentISLPLow-powerstorage-modeFuelgaugeinSLEEPmode.ILOAD<SleepCurrentIHBFuelgaugeinHIBERNATEmode.ILOAD<HibernateCurrent8Specifiedbydesign.NotproductionDIGITALINPUTANDOUTPUTDCTA=–40°Cto85°C,typicalvaluesatTA=25°CandVREGIN=3.6V(unlessotherwiseTEST Outputvoltage,low(SCL,SDA,SOC_INT,BSDA,BSCL)IOL=3VOutputvoltage,high(BSDA,IOH=–1VCCVOutputvoltage,high(SDA,SCL,SOC_INT)ExternalpullupresistorconnectedtoVCCInputvoltage,low(SDA,VInputvoltage,lowBATINSERTCHECKMODEInputvoltage,high(SDA,VInputvoltage,highBATINSERTCHECKMODE VCCInputvoltage,lowVREGN=2.8toVInputvoltage,highIlkgInputleakagecurrent(I/OSpecifiedbydesign.NotproductionPOWER-ONTA=–40°Cto85°C,typicalvaluesatTA=25°CandVREGIN=3.6V(unlessotherwiseTESTinputatVCCVPower-onreset2.5VLDOTA=–40°Cto85°C,CLDO25=1μF,VREGIN=3.6V(unlessotherwiseTESTRegulatoroutputvoltage2.8V≤VREGIN≤4.5V,IOUT≤V2.45V≤VREGN<2.8V(lowbattery),IOUT≤3mAVINTERNALCLOCKTA=–40°Cto85°C,2.4V<VCC<2.6V;typicalvaluesatTA=25°CandVCC=2.5V(unlessotherwiseTEST HighFrequency LowFrequencyADC(TEMPERATUREANDCELLMEASUREMENT)TA=–40°Cto85°C,2.4V<VCC<2.6V;typicalvaluesatTA=25°CandVCC=2.5V(unlessotherwiseTESTInputvoltagerangeVSS–2VInputvoltagerangeVSS–5VInputvoltage VInternaltemperaturesensorvoltagegainConversionInput1ZADC1Effectiveinput8ZADC2Effectiveinputbq27530-G1notmeasuringcell8bq27530-G1measuringcellIlkg(ADC)Inputleakage(1)Specifiedbydesign.NottestedinINTEGRATINGADC(COULOMBCOUNTER)TA=–40°Cto85°C,2.4V<VCC<2.6V;typicalvaluesatTA=25°CandVCC=2.5V(unlessotherwiseTESTV(SRP)andV(SRN)VSR=V(SRP)–VConversionSingle1sInputIntegralnonlinearity%ZN(SR)EffectiveinputIlkg(SInputleakage(1)Specifiedbydesign.NottestedinDATAFLASHMEMORYTA=–40°Cto85°C,2.4V<VCC<2.6V;typicalvaluesatTA=25°CandVCC=2.5V(unlessotherwiseTESTtDRDataFlash-programmingwritetWORDPROGWordprogramming2 ROGFlash-writesupply5tDFERASEDataflashmastererasetIFERASEInstructionflashmastererasetPGERASEFlashpageerase(1)Specifiedbydesign.NotproductionPATIBLEINTERFACECOMMUNICATIONTIMINGTA=–40°Cto85°C,2.4V<VCC<2.6V;typicalvaluesatTA=25°CandVCC=2.5V(unlessotherwiseTEST SCL/SDAriseSCL/SDAfallSCLpulsedurationSCLpulsedurationSetupforrepeatedStarttofirstfallingedgeofDatasetupDatahold0SetuptimeforBustimebetweenstopandClockfrequency(1)Iftheclockfrequency(fSCL)is>100kHz,use1-bytewritecommandsforproperoperation.Allothertransactionstypesaresupportedat400kHz.(RefertoI2CINTERFACEandI2CCommandWaitingTime)Figure patibleInterfaceTimingGENERALThebq27530-G1accuraypredictsthebatterycapacityandotheroperationalcharacteristicsofasingleLi-basedrechargeablecell.Itcanbeinterrogatedbyasystemprocessortoprovidecellinformation,suchastime-to-empty(TTE),andstate-of-charge(SOC)aswellasSOCinterruptsignaltothehost.Thebq27530-G1cancontrolabq2416xChargerICwithouttheinterventionfromanapplicationsystemprocessor.Usingthebq27530-G1andbq2416xchipset,batteriescanbechargedwiththetypicalconstant-current,constantvoltage(CCCV)profileorchargedusingaMulti-LevelCharging(MLC)algorithm.Informationisaccessedthroughaseriesofcommands,calledStandardCommands.FurthercapabilitiesareprovidedbytheadditionalExtendedCommandsset.Bothsetsofcommands,indicatedbythegeneralformatCommand(),areusedtoreadandwriteinformationcontainedwithinthedevicecontrolandstatusregisters,aswellasitsdataflashlocations.Commandsaresentfromsystemtogaugeusingthebq27530-G1’sI2Cserialcommunicationsengine,andcanbeexecutedduringapplicationdevelopment,packmanufacture,orend-equipmentoperation.Cellinformationisstoredinthedeviceinnon-volatileflashmemory.Manyofthesedataflashlocationsareaccessibleduringapplicationdevelopment.Theycannot,generally,beaccesseddirectlyduringend-equipmentoperation.Accesstotheselocationsisachievedbyeitheruseofthebq27530-G1’scompanionevaluationsoftware,throughindividualcommands,orthroughasequenceofdata-flash-accesscommands.Toaccessadesireddataflashlocation,thecorrectdataflashsubclassandoffsetmustbeknown.Thekeytothebq27530-G1high-accuracygasgaugingpredictionisTexasInstrument’sproprietaryImpedanceTrack?algorithm.Thisalgorithmusescellmeasurements,characteristics,andpropertiestocreatestate-of-chargepredictionsthatcanachievelessthan1%erroracrossawidevarietyofoperatingconditionsandoverthelifetimeofthebattery.Thedevicemeasuresbatterycharge/dischargeactivitybymonitoringthevoltageacrossasmall-valueseriessenseresistor(5m?to20m?typ.)locatedbetweenthesystem’sVssandthebattery’sPACK-terminal.Whenacellisattachedtothedevice,cellimpedanceiscomputed,basedoncellcurrent,cellopen-circuitvoltage(OCV),andcellvoltageunderloadingconditions.Thedeviceexternaltemperaturesensingisoptimizedwiththeuseofahighaccuracynegativetemperaturecoefficient(NTC)thermistorwithR25=10.0k?±1%,B25/85=3435K±1%(suchasSemitecNTC103AT).Thebq27530-G1canalsobeconfiguredtouseitsinternaltemperaturesensor.Whenanexternalthermistorisused,a18.2kpullupresistorbetweenBI/TOUTandTSpinsisalsorequired.Thebq27530-G1usestemperaturetomonitorthebattery-packenvironment,whichisusedforfuelgaugingandcellprotectionfunctionality.Tominimizepowerconsumption,thedevicehasdifferentpowermodes:NORMAL,SLEEP,SLEEP+,HIBERNATE,andBATINSERTCHECK.Thebq27530-G1passesautomaticallybetweenthesemodes,dependingupontheoccurrenceofspecificevents,thoughasystemprocessorcaninitiatesomeofthesemodesForcompleteoperationaldetails,refertobq27530-G1TechnicalReferenceFORMATTINGCONVENTIONSINTHISCommands:italicswithparenthesesandnobreakingspaces,e.g.,RemainingCapacity(Dataflash:italics,bold,andbreakingspaces,e.g.,DesignRegisterbitsandflags:bracketsanditalics,e.g.,[TDA]Dataflashbits:brackets,italicsandbold,e.g.,[LED1]Modesandstates:ALLCAPITALS,e.g.,UNSEALEDmode.DATASTANDARDDATAThebq27530-G1usesaseriesof2-bytestandardcommandstoenablesystemreadingandwritingofbatteryinformation.Eachstandardcommandhasanassociatedcommand-codepair,asindicatedinTable2.Becauseeachcommandconsistsoftwobytesofdata,twoconsecutiveI2Ctransmissionsmustbeexecutedbothtoinitiatethecommandfunction,andtoreadorwritethecorrespondingtwobytesofdata.Additionaldetailsarefoundinthebq27530-G1TechnicalReferenceManual.Table2.StandardCOMMANDControl(0x00/AtRate(0x02/AtRateTimeToEmpty(0x04/RTemperature(0x06/0.1Voltage(0x08/R0x0a/RNominalAvailableCapacity(0x0c/RFullAvailableCapacity(0x0e/RRemainingCapacity(0x10/RFullChargeCapacity(0x12/RAverageCurrent(0x14/RTimeToEmpty(0x16/RRemainingCapacityUnfiltered(0x18/RStandbyCurrent(0x1a/RRemainingCapacityFiltered(0x1c/RProgChargingCurrent(0x1e/ProgChargingVoltage(0x20/FullChargeCapacityUnfiltered(0x22/RAveragePower(0x24/RFullChargeCapacityFiltered(0x26/RStateOfHealth(0x28/%/RCycleCount(0x2a/RStateOfCharge(0x2c/%RTrueSOC(0x2e/%RInstantaneousCurrentReading(0x30/RInternalTemperature(0x32/0.1RChargingLevel(0x34/RRLevelTaperCurrent(0x6e/RRCalcChargingCurrent(0x70/RRCalcChargingVoltage(0x72/VRROnlywriteablewhenChargerOptions[BYPASS]isControl():IssuingaControl()commandrequiresasubsequent2-byte mand.Theseadditionalbytesspecifytheparticularcontrolfunctiondesired.TheControl()commandallowsthesystemtocontrolspecificfeaturesofthebq27530-G1duringnormaloperationandadditionalfeatureswhenthedeviceisindifferentaccessmodes,asdescribedinTable3.Additionaldetailsarefoundinthebq27530-G1TechnicalReferenceManual.Table3.Control( CNTLReportsthestatusofhibernate,IT,Reportsthedevicetype(eg:ReportsthefirmwareversiononthedeviceReportsthehardwareversionofthedeviceReturnsprevious mandReportsthechemicalidentifieroftheImpedanceTrack?sthedevicetomeasureandstoretheboardsthedevicetomeasuretheinternalCCsthedevicetostoretheinternalCCRequestthegaugetotakeaOCVstheBAT_DETbitsetwhenthe[BIE]bitisstheBAT_DETbitclearwhenthe[BIE]bitissCONTROL_STATUS[HIBERNATE]tosCONTROL_STATUS[HIBERNATE]tosCONTROL_STATUS[SNOOZE]tosCONTROL_STATUS[SNOOZE]toMakestheprogrammedchargecurrenttobehalfofwhatiscalculatedbythegaugechargingalgorithm.Enablecharger.ChargewillcontinueasdictatedbygaugechargingDisablecharger(SetCEbitofEnablesthegasgaugetocontrolthechargerwhilecontinuoslyresettingthechargerwatchdogThegasgaugestopsresettingthechargerMakestheprogrammedchargecurrenttobesameaswhatiscalculatedbythegaugechargingalgorithm.ReturnstheDataFlashcesdeviceinSEALEDaccessEnablestheImpedanceTrack?safullresetofthebq27530-FUNCTIONALThebq27530-G1measuresthecellvoltage,temperature,andcurrenttodeterminebatterySOC.Thebq27530-G1monitorschargeanddischargeactivitybysensingthevoltageacrossasmall-valueresistor(5m?to20m?typ.)betweentheSRPandSRNpinsandinserieswiththecell.Byintegratingchargepassingthroughthebattery,thebattery’sSOCisadjustedduringbatterychargeordischarge.Thetotalbatterycapacityisfoundbycomparingstatesofchargebeforeandafterapplyingtheloadwiththeamountofchargepassed.Whenanapplicationloadisapplied,theimpedanceofthecellismeasuredbycomparingtheOCVobtainedfromapredefinedfunctionforpresentSOCwiththemeasuredvoltageunderload.MeasurementsofOCVandchargeintegrationdeterminechemicalstateofchargeandchemicalcapacity(Qmax).TheinitialQmaxvaluesaretakenfromacellmanufacturers'datasheetmultipliedbythenumberofparallelcells.ItisalsousedforthevalueinDesignCapacity.Thebq27530-G1acquiresandupdatesthebattery-impedanceprofileduringnormalbatteryusage.Itusesthisprofile,alongwithSOCandtheQmaxvalue,todetermine FullChargeCapacity()isreportedascapacityavailablefromafullychargedbatteryunderthepresentloadand ) FullAvailableCapacity()arethe pensated(noorlightload)versionsofRemainingCapacity()andFullChargeCapacity()respectively.Thebq27530-G1hastwoflagsaccessedbytheFlags()functionthatwarnswhenthebattery’sSOChasfallentocriticallevels.WhenRemainingCapacity()fallsbelowthefirstcapacitythreshold,specifiedinSOC1SetThreshold,the[SOC1](StateofChargeInitial)flagisset.TheflagisclearedonceRemainingCapacity()risesaboveSOC1ClearThreshold.WhenVoltage()fallsbelowthesystemshutdownthresholdvoltage,SysDownSetVoltThreshold,the[SYSDOWN]flagisset,servingasafinalwarningtoshutdownthesystem.TheSOC_INTalsosignals.WhenVoltage()risesaboveSysDownClearVoltageandthe[SYSDOWN]flaghasalreadybeenset,the[SYSDOWN]flagiscleared.TheSOC_INTalsosignalssuchchange.AllunitsareinmV.WhenthevoltageisdischargedtoTerminateVoltage,theSOCwillbesetasI2CThebq27530-G1supportsthestandardI2Cread,incrementalread,quickread,onebytewrite,andincrementalwritefunctions.The7bitdeviceaddress(ADDR)isthemostsignificant7bitsofthehexaddressandisfixed.Thefirst8-bitsoftheI2Cprotocolwill;therefore,be0xAAor0xABforwriteorread,Host

S

0AADATA0AADATAAP

1-byte

ADATAN0AA ADATAN0AA0AA ADATAA..DATANPAincrementalPA0AA0AAA (SStart, RepeatedStart,

incrementalwriteAcknowledge,N NoAcknowledge,andP

..The“quickread”returnsdataattheaddressindicatedbytheaddresspointer.Theaddresspointer,aregisterinternaltotheI2Ccommunicationengine,willincrementwheneverdataisacknowledgedbythebq27530-G1ortheI2Cmaster.“Quickwrites”functioninthesamemannerandareaconvenientmeansofsendingmultiplebytestoconsecutivecommandlocations(suchastwo-bytecommandsthatrequiretwobytesofdata)ThefollowingcommandsequencesarenotAttempttowritearead-onlyaddress(NACKafterdatasentbyAttempttoreadanaddressabove0x6B(NACKI2CTimeTheI2CenginewillreleasebothSDAandSCLiftheI2Cbusisheldlowfor2seconds.Ifthebq27530-G1washoldingthelines,releasingthemwillthemforthemastertodrivethelines.Ifanexternalconditionisholdingeitherofthelineslow,theI2Cenginewillenterthelowpowersleepmode.I2CCommandWaitingToensureproperoperationat400kHz,at(BUF)≥66μsbuswaitingtimeshouldbeinsertedbetweenallpacketsaddressedtothebq27530-G1.Inaddition,iftheSCLclockfrequency(fSCL)is>100kHz,useindividual1-bytewritecommandsforproperdataflowcontrol.Thefollowingdiagramshowsthestandardwaitingtimerequiredbetweenissuingthecontrol mandthereadingthestatusresult.ADF_CHECKSUMmandrequires100mSminimumpriortoreadingtheresult.AnOCV_CMD mandrequires1.2secondspriortoreadingtheresult.Forread-writestandardcommand,aminimumof2secondsisrequiredtogettheresultupdated.Forread-onlystandardcommands,thereisnowaitingtimerequired,butthehostshouldnotissueallstandardcommandsmorethantwotimespersecond.Otherwise,thegaugecouldresultinaresetduetotheexpirationofthewatchdogADDR0ACMDADATAAPADDR0ACMDADATAAPADDR0ACMDA ADDR ADATAADATANWaitingtimeinsertedbetweentwo1bytewritepacketsfora mandandreadingresults(requiredfor100kHz<f400kHz)ADDR0ACMDADATAADATAAPADDR0ACMDA ADDR ADATAADATANWaitingtimeinsertedbetweenincremental2bytewritepacketfora mandandreadingresults(acceptableforf100kHz) ADDR0ACMDA ADDR ADATAADATAADATAADATANI2CClock

WaitingtimeinsertedafterincrementalAclockstretchcanoccurduringallmodesoffuelgaugeoperation.In睡眠andHIBERNATEmodes,ashortclockstretchwilloccuronallI2Ctrafficasthedevicemustwake-uptoprocessthepacket.Intheothermodes(電池插入檢查,NORMAL,睡眠+)clockstretchingwillonlyoccurforpacketsaddressedforthefuelgauge.ThemajorityofclockstretchperiodsaresmallastheI2Cinterfaceperformsnormaldataflowcontrol.However,lessfrequentyetmoresignificantclockstretchperiodsmayoccurasblocksof數(shù)據閃存areupdated.Thefollowingtablesummarizestheapproximateclockstretchdurationforvariousfuelgaugeoperatingconditions.GaugingOperatingCondition/睡Clockstretchoccursatthebeginningofalltrafficasthedevicewakes≤4電池插入檢睡眠Clockstretchoccurswithinthepacketforflowcontrol.(afterastartbit,ACKorfirstdata≤4NormalRatable數(shù)據閃存24數(shù)據閃存block72Restored數(shù)據閃存blockwriteafterlossof116EndofdischargeRatable數(shù)據閃存144REFERENCEPACKAGEOPTION11-Apr-PACKAGINGOrderablePackageEcoMSLPeakOpTempTop-SideBQ27530YZFR-&noSb/Br)Level-1-260C--40toBQ27530YZFT-&noSb/Br)Level-1-260C--40to(1)ThemarketingstatusvaluesaredefinedasACTIVE:Product mendedfornewLIFEBUY:TIhasannouncedthatthedevicewillbedis,andalifetime-buyperiodisinNRND: mendedfornewdesigns.Deviceisinproductiontosupportexistingcustomers,butTIdoes mendusingthispartinanewPREVIEW:Devicehasbeenannouncedbutisnotinproduction.SamplesmayormaynotbeOBSOLETE:TIhasdistheproductionofthe(2)Econ-Thennedeco-friendlyclassification:Pb-(RoHS),Pb-(RoHSExempt),orGreen(RoHS&noSb/Br)-pleasecheck informationandadditionalproductcontentdetails.TBD:ThePb-/Green nhasnotbeenPb-(RoHS):TI'sterms"Lead- "or"Pb-"meansemiconductorproductsthatarecompatiblewiththecurrentRoHSrequirementsforall6substances,includingtherequirementthatleadnotexceed0.1%byweightinhomogeneousmaterials.Wheredesignedtobesolderedathightemperatures,TIPb-productsaresuitableforuseinspecifiedlead-processes.Pb-(RoHSExempt):ThiscomponenthasaRoHSexemptionforeither1)lead-basedflip-chipsolderbumpsusedbetweenthedieandpackage,or2)lead-baseddieadhesiveusedbetweenthedieandleadframe.ThecomponentisotherwiseconsideredPb-(RoHScompatible)asdefinedabove.Green(RoHS&noSb/Br):TIdefines"Green"tomeanPb-(RoHScompatble),andofBromine(Br)andAntimony(Sb)basedflameretardants(BrorSbdonotexceed0.1%byweightinhomogeneousmaterial)(3)MSL,PeakTemp.--TheMoistureSensitivityLevelratingaccordingtotheJEDECindustrystandardclass