后羿hy1908 80V90A mos管-hy1908場效應晶體管參數(shù)-驪微電子

深圳市驪微電子科技有限公司電源方案開發(fā)設計半導體專業(yè)供應商深圳市驪微電子科技有限公司電源方案開發(fā)設計半導體專業(yè)供應商-nelnnemetodeMOFFeatures 80V/90A,

PinDescriptionGDSGDSGDGDSGDSGDSDS(ON)FreeTO-252-2L TO-251-3L

TO-251-3SApplicationsPowerManagementforInverterSystems.

OrderingandMarkingInformationDD U VHY1908 HY1908 HY1908XXXXXX XXXXXX XXXXXXPackageCodeD:U:L V:eXXXXXXNote:HUAYIlead-freeproductscontainmoldingcompounds/dieattachmaterialsand100%mattetinplateTerminationfinish;whicharefullycompliantwithRoHS.HUAYIlead-freeproductsmeetorexceedthelead-FreerequirementsofIPC/JEDECJ-STD-020forMSLclassificationatlead-freepeakreflowtemperature.HUAYIdefines“Green”tomeanlead-free(RoHScompliant)andhalogenfree(BrorCldoesnotexceed900ppmbyweightinhomogeneousmaterialandtotalofBrandCldoesnotexceed1500ppmbyweight).HUAYIreservestherighttomakechanges,corrections,enhancements,modifications,andimprovementstothispr-oductand/ortothisdocumentatanytimewithoutnotice.AbsoluteMaximumRatingsSymbolParameterRatingUnitCommonRatings(TC=25°CUnlessOtherwiseNoted)VDSSDrain-SourceVoltage80VVGSSGate-SourceVoltageTJMaximumJunctionTemperature175°CTSTGStorageTemperatureRange-55to175°CISDiodeContinuousForwardCurrentTC=25°C90AMountedonLargeHeatSinkIDMPulsedDrainCurrent*TC=25°C315**AIDContinuousDrainCurrentTC=25°C90ATC=100°C59PDMaximumPowerDissipationTC=25°C64WTC=100°C32RJCThermalResistance-JunctiontoCase2.35°C/WRJAThermalResistance-JunctiontoAmbient110AvalancheRatingsEASAvalancheSinglePulsedL=0.5mH214***mJNote：*Repetitiverating;pulsewidthlimiitedbyjunctiontemperature**Draincurrentislimitedbyjunctiontemperature***VD=64VCElectricalCharacteristics (TC

=25COtherwiseNoted)SymbolParameterTestConditionsHY1908UnitMin.Typ.Max.StaticCharacteristicsBVDSSDrain-SourceBreakdownVoltageVGS=0V,IDS=250A80--VIDSSZeroGateVoltageDrainCurrentVDS=80V,VGS=0V--1TJ=85°C--10VGS(th)GateThresholdVoltageVDS=VGS,IDS=250A234VIGSSGateLeakageCurrentVGS=±25V,VDS=0V--±100nARDS(ON)*Drain-SourceOn-stateResistanceVGS=10V,IDS=45A-7.89.0mDiodeCharacteristicsVSD*DiodeForwardVoltageISD=45A,VGS=0V-0.81.2VtrrReverseRecoveryTimeISD=45A,dlSD/dt=100A/s-30-nsQrrReverseRecoveryCharge-25-nC深圳市驪微電子科技有限公司 電源方案開發(fā)設計 半導體專業(yè)供應商深圳市驪微電子科技有限公司電源方案開發(fā)設計半導體專業(yè)供應商深圳市驪微電子科技有限公司電源方案開發(fā)設計半導體專業(yè)供應商CElectricalCharacteristics(Cont.)(TC

=25COtherwiseNoted)SymbolParameterTestConditionsHY1908UnitMin.Typ.Max.DynamicCharacteristicsRGGateResistanceVGS=0V,VDS=1MHz-1.2-CissInputCapacitanceVGS=0V,VDS=25V,Frequency=1.0MHz-3864-pFCossOutputCapacitance-365-CrssReverseTransferCapacitance-239-td(ON)Turn-onDelayTimeVDD=40V,RG=6,IDS=45A,-26-nsTrTurn-onRiseTime-42-td(OFF)Turn-offDelayTime-64-TfTurn-offFallTime-20-GateChargeCharacteristicsQgTotalGateChargeVDS=64V,VGS=10V,IDS=45A-84-nCQgsGate-SourceCharge-16-QgdGate-DrainCharge-26-Note*:Pulsetest;pulsewidth300s,dutycycle2%.CircuitSwitchingTimeCircuitGateChargeCircuitDevicePerUnitPackageUnitQuantityTO-252-2L75TO-252-2LReel2500TO-251-3L75TO-251-3S75PackageInformationTO-252-2LCOMMONDIMENSIONSSYMBOLmmMINNOMMAXA2.202.302.40A10.00-0.20A20.971.071.17b0.680.780.90b35.205.335.50c0.430.530.63D5.986.106.22D15.30REFE6.406.606.80E14.63--e2.286BSCH9.4010.1010.50L1.381.501.75L12.90REFL20.51BSCL30.88-1.28L4--1.00L51.651.801.95θ0°-8°

COMMONDIMENSIONSSYMBOLmmMINNOMMAXA2.202.302.40A20.971