p波段低噪聲放大器的性能優(yōu)化設(shè)計(jì)及版圖實(shí)現(xiàn)正文大學(xué)學(xué)位論文

本科畢業(yè)設(shè)計(jì)（論文）P波段低噪聲放大器的性能優(yōu)化設(shè)計(jì)及版圖實(shí)現(xiàn)IV、結(jié)論本文利用0.2的氮鎵鋁/氮化鎵的高電子遷移率晶體管技術(shù)設(shè)計(jì)了一個(gè)超寬帶低噪聲放大器。這個(gè)設(shè)計(jì)是基于電阻反饋架構(gòu)的。為了擴(kuò)展傳統(tǒng)電阻反饋放大器的頻率響應(yīng)，同時(shí)完善輸入匹配，兩個(gè)電感器和傳輸線分別串聯(lián)連接在輸入晶體管的三個(gè)端子上。所有的電感器值由兩個(gè)反饋機(jī)制來最小化，這導(dǎo)致放大器有比分布式體系結(jié)構(gòu)小得多的面積。有了良好的雙端口匹配、隔離和穩(wěn)定性，低噪聲放大器獲得一個(gè)相對平坦的功率增益，超過1-25GHz帶寬，最大功率增益為13dB，最小噪聲系數(shù)為3.3dB，最大三階互調(diào)失真為33.5dBm，最大輸出1dB壓縮點(diǎn)為20dBm，以及低功耗和小的芯片面積。參考文獻(xiàn)[1]J.-W.Lee,A.Kuliev,V.Kumar,R.Schwindt,andI.Adesida,“MicrowavenoisecharacteristicsofAlGaN/GaNHEMTsonSiCsubstratesforbroad-bandlow-noiseamplifiers,”IEEEMicrow.WirelessCompon.Lett.,vol.14,no.6,pp.259–261,Jun.2004.[2]I.Khalil,A.Liero,M.Rudolph,R.Lossy,andW.Heinrich,“GaNHEMTpotentialforlow-noisehighlylinearRFapplications,”IEEEMicrow.WirelessCompon.Lett.,vol.18,no.9,pp.605–607,Sep.2008.[3]K.W.Kobayash,Y.C.Chen,I.Smorchkova,B.Heying,W.-B.Luo,W.Sutton,M.Wojtowicz,andA.Oki,“Multi-DecadeGaNHEMTcascode-distributedpoweramplifierwithbasebandperformance,”inIEEERFICSymp.Dig.,Jun.2009,pp.369–372.[4]S.E.Shih,W.R.Deal,D.M.Yamauchi,W.E.Sutton,W.-B.Luo,Y.C.Chen,I.P.Smorchkova,B.Heying,M.Wojtowicz,andM.Siddiqui,“DesignandanalysisofultrawidebandGaNdual-gateHEMTlownoiseamplifiers,”IEEETrans.Microw.TheoryTech.,vol.57,no.12,pp.3270–3277,Dec.2009.[5]S.E.Shih,W.R.Deal,W.E.Sutton,Y.C.Chen,I.Smorchkova,B.Heying,M.Wojtowicz,andM.Siddiqui,“BroadbandGaNdual-gateHEMTlownoiseamplifier,”inIEEECSICSymp.Dig.,Oct.2007,pp.1–4.[6]M.Micovic,A.Kurdoghlian,T.Lee,R.O.Hiramoto,P.Hashimoto,A.Schmitz,I.Milosavljevic,P.J.Willadsen,W.-S.Wong,M.Antcliffe,M.Wetzel,M.Hu,M.J.Delaney,andD.H.Chow,“Robustbroadband(4GHz–16GHz)GaNMMICLNA,”inIEEECSICSymp.Dig.,Oct.2007,pp.1–4.[7]M.V.Aust,A.K.Sharma,Y.-C.Chen,andM.Wojtowicz,“Widebanddual-gateGaNHEMTlow