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1Semikron
Hong
Kong
NorbertPluschke07.10.2005IGBTGateDriverCalculationGateDriverRequirement1SemikronHongKongNorbertP2Semikron
Hong
Kong
NorbertPluschke07.10.2005Whatisthemostimportantrequirement
foran
IGBTdriver?
GatePeakcurrent2SemikronHongKongNorbertP3Semikron
Hong
Kong
NorbertPluschke07.10.2005Conditionsforasafetyoperation?WhichgatedriverissuitableforthemoduleSKM200GB128D?
Designparameters:fsw=10kHzRg=?
reverserecoverycurrentDiodeshouldbe-1.5xIdiodeby80degreecase
130Ax1.5=195AGateresistorinrangeof“test–
gateresistor”
3SemikronHongKongNorbertP4Semikron
Hong
Kong
NorbertPluschke07.10.2005Howtofindtherightgateresistor?Rg=7OhmTwogateresistorsarepossibleforturnonandturnoffRon=7OhmRoff=10Ohm195A–maxreverserecoverycurrent4SemikronHongKongNorbertP5Semikron
Hong
Kong
NorbertPluschke07.10.2005DifferencebetweenTrench-andSPTTechnology?TrenchTechnologyneedsasmallerGatecharge?DriverhastoprovideasmallerGatecharge
?SPTTechnologyneedsmoreGatechargecomparedtoTrenchTechnology?DriverhastoprovideahigherGatecharge5SemikronHongKongNorbertP6Semikron
Hong
Kong
NorbertPluschke07.10.2005Driverperformance–differentIGBTtechnologiesneedsdifferentgatecharge?TrenchIGBTwithsamechipcurrentGatechargeis2.3uC6SemikronHongKongNorbertP7Semikron
Hong
Kong
NorbertPluschke07.10.2005Driverperformance–differentIGBTtechnologiesneedsdifferentgatecharge?SPTIGBTwithsamechipcurrentGatechargeis3uC7SemikronHongKongNorbertP8Semikron
Hong
Kong
NorbertPluschke07.10.2005Demandsforthegatedriver?Thesuitablegatedrivermustprovidetherequired
?Gatecharge(QG)
–powersupplyofthedrivermustprovidetheaveragepower
?Averagecurrent(IoutAV)
–powersupply
?Gatepulsecurrent(Ig.pulse)
–mostimportant
?attheappliedswitchingfrequency(fsw)8SemikronHongKongNorbertP9Semikron
Hong
Kong
NorbertPluschke07.10.2005-8
15
1390
DeterminationofGateCharge
?Gatecharge(QG)canbedeterminedfromfig.6oftheSEMITRANSdatasheet
?QG=1390nC
Thetypicalturn-onandturn-offvoltageofthegatedriverisVGG+=+15VVGG-=-8V
9SemikronHongKongNorbertP10Semikron
Hong
Kong
NorbertPluschke07.10.2005Calculationoftheaveragecurrent
?Calculationofaveragecurrent:
?IoutAV=P/?U?V=+Vg+[-Vg]
?withP=E*fsw=QG*?V*fsw
?
?IoutAV=QG*fsw
=1390nC*10kHz=13.9mA
Absolutevalue10SemikronHongKongNorbert11Semikron
Hong
Kong
NorbertPluschke07.10.2005Powersupplyrequirements?Gatecharge?Thepowersupplyorthetransformermustprovidetheenergy(Semikronisusingpulsetransformerforthepowersupply,wemustconsiderthetransformedaveragepowerfromthetransformer)
?Averagecurrent?Isrelatedtothetransformer11SemikronHongKongNorbert12Semikron
Hong
Kong
NorbertPluschke07.10.2005Calculationofthepeakgatecurrent?Examinationofthepeakgatecurrentwithminimumgateresistance
?E.g.RG.on=RG.off=7?
?Ig.puls
≈?V/RG+Rint
=23V/7?+1?=2.9A
12SemikronHongKongNorbert13Semikron
Hong
Kong
NorbertPluschke07.10.2005Pulsepowerratingofthegateresistor
?Ptotal
–Gateresistor
?PpulseGateresistor=IoutAVx?V
?Moreinformation:Theproblemoccurswhentheuserforgetsaboutthepeakpowerratingofthegateresistor.ThepeakpowerratingofmanyordinarySMDresistorsisquitesmall.ThereareSMDresistorsavailablewithhigherpeakpowerratings.Forexample,ifyoutakeanSKDdriverapart,youwillseethatthegateresistorsareinadifferentSMDpackagetoalltheotherresistors(exceptoneortwootherplacesthatalsoneedhighpeakpower).Theproblemwaslessobviouswiththroughholecomponentssimplybecausetheresistorswerephysicallybigger.
ThePhilipsresistordatabookhasagoodsectiononpeakpowerratings.
13SemikronHongKongNorbert14Semikron
Hong
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NorbertPluschke07.10.2005Choiceofthesuitablegatedriver
?Theabsolutemaximumratingsofthesuitablegatedrivermustbeequalorhigherthantheappliedandcalculatedvalues?GatechargeQG=1390nC?AveragecurrentIoutAV=13,9mA
?PeakgatecurrentIg.pulse=2.9A
?Switchingfrequencyfsw=10kHz
?CollectorEmittervoltageVCE=1200V
?Numberofdriverchannels:2(GBmodule)
?dualdriver14SemikronHongKongNorbert15Semikron
Hong
Kong
NorbertPluschke07.10.2005ComparisonwiththeparametersinthedriverdatasheetCalculatedandappliedvalues:?Ig.pulse=2.9A@Rg=7?+Rint
?IoutAV=13.9mA
?fsw=10kHz
?VCE=1200V
?QG=1390nC?Accordingtotheappliedandcalculatedvalues,thedrivere.g.SKHI22AisabletodriveSKM200GB128D
15SemikronHongKongNorbert17Semikron
Hong
Kong
NorbertPluschke07.10.2005Productoverview(importantparameters)17SemikronHongKongNorbert18Semikron
Hong
Kong
NorbertPluschke07.10.2005DrivercoreforIGBTmodules?Simple
?Adaptable
?Expandable
?Shorttimetomarket
?Twoversions?SKYPER?(standardversion)?SKYPER?PRO(premiumversion)18SemikronHongKongNorbert19Semikron
Hong
Kong
NorbertPluschke07.10.2005AssemblyonSEMiXTM3–ModularIPM?SKYPER
?Driverboard
?SEMIX3IGBThalfbridgewithspringcontacts19SemikronHongKongNorbert20Semikron
Hong
Kong
NorbertPluschke07.10.2005SKYPER?
–morethanasolutionmodularIPMusingSEMiX?withadapterboardsolderdirectlyinyourmainboardtake3for6-packs20SemikronHongKongNorbert21Semikron
Hong
Kong
NorbertPluschke07.10.2005
SelectionoftherightIGBTdriverAdvice21SemikronHongKongNorbert22Semikron
Hong
Kong
NorbertPluschke07.10.2005Problem1---------------------CrossconductionLowimpedance22SemikronHongKongNorbert23Semikron
Hong
Kong
NorbertPluschke07.10.2005CrossconductionbehaviorvCE,T1(t)
iC,T1(t)VCC
IO
0tvGE,T1(t)
vGE,T2(t)VGE,Io
VGE(th)0tVGG+
VCC
IO
0tvCE,T2(t)=
vF,D2(t)
iF,D2(t),
iC,T2(t)T1D1T2D2iv,T2
?WhychangesVGE,T2whenT1switcheson?
23SemikronHongKongNorbert24Semikron
Hong
Kong
NorbertPluschke07.10.2005IGBT-ParasiticcapacitancesdtdvCiVCQv?????WhentheoutervoltagepotentialVchanges,theloadQhastofollow?ThisleadstoadisplacementcurrentiV
24SemikronHongKongNorbert25Semikron
Hong
Kong
NorbertPluschke07.10.2005Switching:DetailedforT2dtdvCiT2CE,T2GC,T2v,??iv,T2
T2GE,T2v,T2GE,Riv??vCE,T2
vGE,T2
iC,T2
RGE,T2CGC,T2vCE,T2(t)VCC
0t0tiC,T2(t)iv,T2(t)vGE,T2(t)VGE(th)0tVGG+
?DiodeD2switchesoffandtakesoverthevoltage?T2“sees”thevoltageoverD2asvCE,T2
?Withthechangedvoltagepotential,theinternalcapacitanceschangetheircharge?Thedisplacementcurrentiv,T2flowsviaCGC,T2,RGE,T2andthedriver
?iv,T2causesavoltagedropinRGE,T2whichisaddedtoVGE,T2
?IfvGE,T2>VGE(th)thenT2turnson(ThereforeSKrecommends:VGG-=-5…-8…-15V)
25SemikronHongKongNorbert26Semikron
Hong
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NorbertPluschke07.10.2005Problem2-----------------------------gateprotectionZ16-1826SemikronHongKongNorbert27Semikron
Hong
Kong
NorbertPluschke07.10.2005Gateclamping----how?Z18PCBdesignbecausenocableclosetotheIGBT27SemikronHongKongNorbert28Semikron
Hong
Kong
NorbertPluschke07.10.2005Problem3-----------------boosterforthegatecurrentUseMOSFETfortheboosterForsmallIGBTsisok28SemikronHongKongNorbert29Semikron
Hong
Kong
NorbertPluschke07.10.2005Problem4----------------------------Shortcircuit?Overvoltage?1200V-----ischiplevel----considerinternalstrayinductance?+/-20V-----gateemittervoltage----considerswitchingbehavioroffreewheelingdiode
?Overcurrent?PowerdissipationofIGBT(shortcircuitcurrentxtime)?Chiptemperaturelevel
29SemikronHongKongNorbert30Semikron
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NorbertPluschke07.10.2005Problem5–deadtimebetweentopandbottomIGBTTurnonandturnoffdelaymustbesymetrical30SemikronHongKongNorbert31Semikron
Hong
Kong
NorbertPluschke07.10.2005Deadtimeexp
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