半導體制造技術：導論

SemiconductorManufacturingTechnology

(半導體制造技術)

-Chap.1Introduction

TEXTBOOKSReferenceBooks1、HistoryoftheSemiconductorManufacturingTechniques（半導體制造技術的歷史）－SemiconductorMaterials（半導體材料）－SemiconductorDevices（半導體裝置）－SemiconductorProcessing（半導體工藝）1.1SemiconductorMaterials（半導體材料）Narrowsense（狹義理解）：Themajorsemiconducting

materialsinthemicroelectronicindustry:Germanium（Ge）、Sillicon（Si）、GalliumArsenide（GaAs）。（在微電子工業(yè)中的主要半導體材料：Ge，Si，GaAs）Broadsense(廣義理解)：Othersemiconductors,includingmetaloxides(ZnO),organicsemiconductors,CNTs,etal.（其他半導體材料，包括金屬氧化物（ZnO），有機半導體，CNTs等）ComparisonoftheSemiconductors（半導體的比較）Material（材料）Band

gap（帶隙）description（描述）Ge0.66eVEarliestsemiconductor，F(xiàn)irsttransistorin1947（最早的半導體，最早的晶體管材料，1947年）Si1.12eVMostcommonsemiconductor；（最常用的半導體）Easytoformhighqualityoxidizedlayer；（容易形成高質(zhì)量的氧化層）LargerbandgapthanGe，Higherworkingtemperature；（比Ge的帶隙更寬，更高的工作溫度）Cheap.（便宜）GaAs1.42eVHigherelectronmobility，Goodforhighspeeddevices；（更高的電子遷移率，適合高速設備）Poorthermalstability，Highdefectdensity，lowintrinsicoxidizationrate。（差的熱穩(wěn)定性，高缺陷密度，低的本征氧化速率）。1.2SemiconductorDevicesYearDeviceInventor1874金屬－半導體接觸Metal-SemiconductorcontactBraun1907發(fā)光二極管LEDRound1947雙極晶體管BipolarTransistorBardeen,Brattain,Shockley1949PN

junctionShockley1952晶閘管ThyristorEbers1954SolarCell（太陽能電池）Chapin,Fuller,PearsonThefirsttransistor（第一個晶體管）Bardeen,Brattain,Shockley

wontheNobelPricein1956forthis.Comparingwithvacuumtubes,Transistorsarelighter,smaller,cheaperandlastlonger.（與真空管相比，晶體管更輕，更小，更便宜，使用壽命更長。）Athyristor（晶閘管）Reverseblockingmode—Voltageisappliedinthedirectionthatwouldbeblockedbyadiode（反向阻斷模式-電壓加在被二極管阻斷的地方）Forwardblockingmode—Voltageisappliedinthedirectionthatwouldcauseadiodetoconduct,butthethyristorhasnotbeentriggeredintoconduction（正向阻塞模式-電壓在導致二極管導通的方向施加，但晶閘管還未觸發(fā)成導通）Forwardconductingmode—Thethyristorhasbeentriggeredintoconductionandwillremainconductinguntiltheforwardcurrentdropsbelowathresholdvalueknownasthe"holdingcurrent"（正向傳導模式-晶閘管已被觸發(fā)成導通和將保持導通，直到正向電流低于被稱為“保持電流“的閾值）1957HeterojunctionBipolarTransistor異質(zhì)結雙極晶體管Kroemer1958隧道二極管TunnelDiodeEsaki1960MOSFETKahng,Atalla1962半導體激光器件semiconductorlaserHall1963異質(zhì)結激光器件HeterojunctionLaserKroemer,Alferov,Kazarinov1963轉(zhuǎn)移電子二極管TransferredElectronDiodeGunn1966MESFET（Metal-SemiconductorFET）Mead1967非易失性半導體存儲器Non-volatilememoryKahng,SzeI-VcurveofaGaAsGunndiodeI-VcurveofatunneldiodeAFloatingGateMOSFET浮柵場效應晶體管：控制門，source（源極），floatinggate（浮置柵極），drain（漏極）。1970電荷耦合器件Charge-CoupledDevicesBoyle,Smith1974共振隧道二極管ResonanttunnelingdiodeChang,Esaki,Tsu1980MODFET

modulated-dopingfieldeffecttransistor

alsoknownastheHighElectronMobilityTransistor(HEMT)Mimura等1994室溫單電子記憶單元SingleElectronMemoryYano等200115nmMOSFETYu等以上數(shù)據(jù)摘自《半導體制造基礎》施敏著，代永平譯，2007AonedimensionalCCDCCD(ChargeCoupledDevice)是電荷藕合器件圖像傳感器。它使用一種高感光度的半導體材料制成，能把光線轉(zhuǎn)變成電荷，通過模數(shù)轉(zhuǎn)換器芯片轉(zhuǎn)換成數(shù)字信號，數(shù)字信號經(jīng)過壓縮以后由相機內(nèi)部的閃速存儲器或內(nèi)置硬盤卡保存1.3SemiconductorTechnologyEvolutionYearTechniqueInventor1918CzochralskiProcessCzochralski1925Bridgman-StockbargemethodBridgman1952DopantDiffusionPfann1957LithographyAndrus1957OxidemaskingFrosch,Derrick1957EpitaxialCVDSheftal,Kokorish,Krasilov1958IonImplantationShockley1959IntegratedCircuitKilby1959monolithicintegratedcircuitNoyce1960planarprocessHoerni1963Complementarymetal–oxide–semiconductor(CMOS)Wanlass,Sah1967Dynamicrandom-accessmemoryDennard1969Self-alignedgate多晶硅自對準柵Kerwin,Klein,Sarace1969MOCVDManasevit,Simpson1971DryEtching干法刻蝕Irving,Lemons,Bobos1971MBE分子束外延Cho1971Micropocessor微處理器技術Hoff1982TrenchIsolation溝槽隔離法Rung,Momose,Nagakubo1989Chemical-MechanicalPolishing化學機械拋光Davari1993Copperinterconnect銅互連ParazczakNANDgateinCMOSlogicCrosssectionoftwotransistorsinaCMOSgate(NAND),inanN-wellCMOSprocess金屬-氧化物-半導體（MOS）場效應晶體管Thefirstmicroprocessor.MadebyHoff,etal.in1971.3mmx4mm,with2300MOSFETs.2、DevelopmentTrendoftheMicroelectronicIndustry（微電子產(chǎn)業(yè)的發(fā)展趨勢）Moore’sLaw（摩爾定律）PropoundedbyGordenE.Moore,theco-founderofIntel,in1964;Thenumberoftransistorsonintegratedcircuitsdoublesapproximatelyeverytwoyears.（集成電路上的晶體管數(shù)量大約每兩年增加一倍）DevelopmentstageAbbreviationNumberofDevicesinonechipSmallscaleintegration（1950s）SSI2－50Middlescaleintegration（1960s）MSI50－5,000Largescaleintegration（1970s）LSI5,000－100,000Verylargescaleintegration（1980s）VLSI100,000－1,000,000Ultralargescaleintegration（1990s）ULSI＞1,000,000IntelXeonE7>1,000,000,000FeatureSize（特征尺寸）:Thesizeoftheelementsonachip,whichisdesignatedbythe"DRAMhalfpitch."（一個芯片上的元件的尺寸，叫做DRAM半節(jié)距。）Thesmallestfeaturesizeisgenerallysmallerthanthefeaturesizeforatechnologygeneration(technologynode).（最小特征尺寸一般小于特征尺寸的技術產(chǎn)生（技術節(jié)點））Forexample,the180nmtechnologygenerationwillhavegatelengthssmallerthan180nm.Developmenttrend：smallerfeaturesizeandlargerwaferdiameter（發(fā)展趨勢：更小的特征尺寸和更大的晶圓直徑）SmallerfeaturesizeHigherarithmetic

speed（更