空間電子器件輻射效應(yīng)_圖文

1、 98 S. Duzellier / Aerospace Science and Technology 9 (2005 9399 Table 4 Typical critical parameters for SEE testing for some kinds of devices Classes of devices Memories Processors Linear devices Power devices Operating conditions Bias, pattern, clock rate (DRAM, row/column errors Bias, program, du

2、ty factor, test mode (static/dynamic . . . Bias, output load, input level Bias Environmental conditions Temperature (SEL Temperature (SEL Temperature (SEB Table 5 Different levels of modelling and associated information and tools Level Material (particle-matter interaction Device (charge transport C

3、ircuit Information Proton-induced recoil spectrum (species and energy Energy deposition in SV (critical energy Critical charge, collection efciency Effect (SEE to be or not to be Tool (example GEANT 4 ISE-TCAD SPICE Fig. 10. Inuence of operating parameters on the LM139 sensitivity 19. Left: output l

4、oad, centre and right: differential input voltage. Fig. 11. 1 µA leakage current induced by a 316 MeV Krypton ion strike in a 4-T SRAM cell 13. Fig. 13. SEUSIM result compared with experimental data 9. Fig. 12. Principle estimating p+ SEE sensitivity of devices. NUREAC: inelastic nuclear reacti

5、on, ELASTIC: elastic scattering, SEUSIM: deposited energy and cross section calculations. localised dose deposition induced by an ion strike that provokes a leakage current in a transistor. Fig. 11 shows the leakage current induced by a 316 MeV Krypton strike in a 4-T SRAM cell using the ISE-TCAD to

6、ol. This kind of results helps dening the conditions of occurrence of such event and then worst case conditions to be applied for testing. The modelling of proton-induced SEE has been investigated by several authors for years 2,4,8,14,15. The generation of recoil atoms following a p+-Si reaction req

7、uires the use of tools able to describe the inelastic/elastic nuclear interaction in order to deduce proton sensitivity from the heavy ion measurement. However the relationship is not simple and straightforward. The most common methodology S. Duzellier / Aerospace Science and Technology 9 (2005 9399

8、 99 mic rays with the upper atmosphere generates a shower of secondary particles among which neutrons are able to induce SEE in a similar way than protons do in the space environment (nuclear reactions. This is even more critical with higher cruise altitudes (Fig. 14 and the multiplication of sensit

9、ive “targets”. References Fig. 14. 110 MeV neutrons ux vs altitude compared with SEU rate measurements on a 64 Kbit SRAM 16. 1 J.H. Adams, Cosmic ray effects on microelectronics, NRL Memorandum Report 5901, 1986. 2 J. Barak, et al., A simple model for calculating proton-induced SEE, IEEE Trans. Nucl

10、. Sci. NS-43 (1996 979. 3 P.E. Dodd, et al., SEU-sensitive volumes in bulk and SOI SRAMs from rst-principles calculations and experiments, IEEE Trans. Nucl. Sci. NS-48 (2001 1893. 4 B. Doucin, et al., Model of single event upsets induced by space protons in electronic devices, in: RADECS Proceedings

11、, 1995, p. 402. 5 S. Duzellier, et al., SEE in-ight data for two static 32 KB memories on high earth orbit, in: IEEE Radiation Effects Data Workshop Record, 2002. 6 ESA/SCC 25100, Single event effects test methods & guidelines. 7 D. Falguère, et al., In-ight observations of the radiative en

12、vironment and its effects on devices in the SAC-C polar orbit, IEEE Trans. Nucl. Sci. NS-49 (6 (2002 2782. 8 C. Inguimbert, et al., Proton upset rate simulation by a Monte Carlo method, IEEE Trans. Nucl. Sci. NS-44 (6 (1997 2243. 9 C. Inguimbert, Proton upset rate prediction: a new sensitive volume

13、concept denition, ONERA thesis, 1999. 10 JEDEC JESD57, Test procedures for the measurement of single-event effects in semiconductor devices from heavy ion irradiation. 11 A.H. Johnston, et al., The effect of temperature on single-particle latchup, IEEE Trans. Nucl. Sci. NS-38 (1991 1435. 12 K.A. Lab

14、el, et al., Anatomy of an in-ight anomaly: investigation of proton-induced SEE test results for stacked IBM DRAMs, IEEE Trans. Nucl. Sci. NS-45 (6 (1998 28982903. 13 J.G. Loquet, Simulation of heavy-ion-induced failure mode in n-MOS cells of ICs, IEEE Trans. Nucl. Sci. NS-48 (2001 2278. 14 P.J. McNu

15、lty, et al., Proton induced spallation reactions, Radiat. Phys. Chem. 43 (1/2 (1994 139. 15 E. Normand, Single event effects in avionics, IEEE Trans. Nucl. Sci. NS-43 (1996 461. 16 T.J. OGorman, et al., Field testing for cosmic ray soft errors in semiconductor memories, IBM J. Res. Dev. 40 (1996 41.

16、 17 E. Petersen, Single event analysis and prediction, IEEE Nuclear and Space Radiation Effects Conference, Short Course, Section III, 1997. 18 J.C. Pickel, et al., Cosmic-ray induced errors in MOS devices, IEEE Trans. Nucl. Sci. NS-27 (1980 1006. 19 C. Poivey, Testing guidelines for single event tr

17、ansient (SET testing of linear devices, unpublished. 20 F.W. Sexton, Measurement of single event phenomena in devices and ICs, IEEE Nuclear and Space Radiation Effects Conference, Short Course, Section III, 1992. 21 W.J. Stapor, Single event effects qualication, IEEE Nuclear and Space Radiation Effe

18、cts Conference, Short Course, Section II, 1995. 22 R.H. Sorensen, et al., Observation and analysis of single event effects on-board the SOHO satellite, in: RADECS Proceedings, 2001, p. 37. 23 J.L. Titus, et al., Experimental study of single event gate rupture and burnout in vertical power MOSFETs, I

19、EEE Trans. Nucl. Sci. NS-43 (2 (1996 533. is described in Fig. 12 and an example of results is given in Fig. 13. 8. General trends and perspective As illustrated throughout this paper, SEE encompasses a wide range of effects in many different devices and technologies. As devices technologies and des

20、ign evolves towards higher integration, operation speed and complexity, several SEE issues are emerging: (1 in ever more complex devices, failure modes are numerous with sometimes orders of magnitude of differences in associated sensitivities, (2 the increasing speed of devices makes SED and SET mor

21、e and more critical in digital devices, (3 with smaller IC feature sizes, combined effects lead to failure mechanisms that are not completely understood and/or modelled (SHE, MBU, . . ., (4 the wider use of COTS in space systems poses several practical problems when dealing with accelerator testing.

22、 The trends towards higher integration of devices may also leads to “abnormal” response of devices to radiation. For instance, the concept of RPP volume used to model the sensitivity of devices has turned out to be unable to correctly describe the angle effects often observed in large capacity memories and more generally when deep or vertical sensitive structures are involved. The inappropriateness of standard models when dealing with modern devices lies in the size