IRF540中文數(shù)據(jù)手冊(cè)

1、QUICK REFERENCE DATAVD5S = 100 Vl= = 23 AW 77 mQIRF540 N 溝道 MOS 管特性'Thrench'工藝低的導(dǎo)通內(nèi)阻快速開(kāi)關(guān)低熱敏電阻綜述使用溝渠工藝封裝的 N通道增強(qiáng)型場(chǎng)效應(yīng)功率晶體管應(yīng)用：DC到DC轉(zhuǎn)換器開(kāi)關(guān)電源電視及電腦顯示器電源管腳管腳描述1Gate2Drain3SourceTabDrain極限值系統(tǒng)絕對(duì)最大值依照限制值符號(hào)參數(shù)條件最小值最大值單位V_DSS漏源極電壓Tj= 25 ?C to 175?C-100VV_DGR漏門(mén)極電壓Tj = 25 ?C to 175?C;一100VV_GS門(mén)源極電壓RGS = 20 k

2、?一士 20VI_D連續(xù)漏電流一23ATmb =25 ?C; VGS = 10 V一16AI_DM脈沖漏電流Tmb = 100 ?C; VGS = 10 V一92AP_D總功耗Tmb = 25 ?C一100WTj, Tsig操作點(diǎn)和 存儲(chǔ)溫度Tmb = 25 ?C-55175C雪崩能量極限值符號(hào)參數(shù)條件最小值最大值單位Eas1 AS非重復(fù)性雪 崩能量最大非重復(fù) 性雪崩電流Unclamped inductive load, IAS = 10 A;tp = 350s; Tjprior to avalanche = 25?CVDD < 25 V; RGS = 50 ?; VGS = 10 V;

3、referto fig:14- -23023mJA熱敏電阻符號(hào)參數(shù)條件最小值典型值最大值單位R安裝底座交界-1.5K/WKthj mb處的熱阻R周?chē)h(huán)境熱阻SOT78封裝,自由空間-60-K/W"rhjaSOT404 封裝,PCB 上-50-K/W電特性25c除非另有說(shuō)明符號(hào)參數(shù)條件最小值典型值最大值單位V(BR) DSS漏源極崩潰電壓Vgs =0V ; ID =0.25mA100-VTj = - 55?C89-VVGS(TO)門(mén)閥電壓Vds = Vgs ; ID = 1 mA234VTj = 175?C1-VTj = - 55?C-6VRDS(ON)漏源極導(dǎo)通電阻Vgs = 10

4、V; ID = 17 A-4977m QTj = 175?C132193m Qgfs向前跨導(dǎo)Vds=25V; Id=17A8.715.5一SGSS門(mén)源極泄漏電流Vgs = ±2 0 V;Vds =0V一10100nAVDS = 100 v； vgs = 0 VVDS=80V;VGS=0V;Tj= 175?C一0.0510uADSS0門(mén)極電壓漏電流一一250uA(2g (tot)QgsQgd總共門(mén)極電荷門(mén)源極電荷門(mén)漏極電荷ID = 17 AVDD = 80 V;VGS = 10V一一一一一一651029nCnCnCTd onTrTd offTf開(kāi)啟延遲時(shí)間開(kāi)啟上沿時(shí)間關(guān)閉延遲時(shí)間 關(guān)閉

5、卜沿時(shí)間Vdd = 50 V; Rd = 2.2 ?;Vdd = 10 V; Rg = 5.6 ?Resistive load一一一一8392624一一一一ns nsnsnsLdLdLs內(nèi)部漏電感內(nèi)部漏電感內(nèi)部源極電感Measured tab to centre of dieMeasured from drain lead to centre of die (SOT78 package only)Measured from source lead to source bond pad一一一3.54.57.5一一一nHnHnHCiSSCoSSCrSS輸入電容輸出電容反響電容Vgs = 0 V;

6、Vds = 25 V; f = 1 MHz一一一890139831187167109pFpFpF反向二極管極限值及特性符號(hào)I參數(shù)條件最小值 典型值 最大值 單位1 S連續(xù)源極電流I F =28A ;-23A1 SM脈沖源極電流Vgs =0V-92AVDS二極管正向電壓-0.941.5Vtrr反向恢復(fù)之間I f =17A ; Vgs =0V;-61-nsQrr反向恢復(fù)命令-d I F /dt=100A/us; Vr=25V-200-nCFig. A. Normalised power dissipation. -D% = 100-PyPo乃七二 *乙F底座溫度-自然功率降低百分比圖1：自然功率損

7、耗Mounting Base temperature. Tmb (C)Fig.2. Normalised continuous drain current ID% = 700,/日渣匕="幾J； conditions: VGS > 10 V底座溫度-漏電流降低百分比圖2 :自然持續(xù)漏電流Fig. 3. Safe operating area. Tmb = 25 "C b & 扇=J； Km single pulse: parameter /漏源極電壓-脈沖漏極電流峰值圖3 :平安操作區(qū)域IE 4 61E-D5IE-04IE-031E-02IE-011E+00P

8、ulse width, Ip (s) 脈竟Fig. 4. Transient thermal impedance. Z切5a = f(t)； parameter D = t/T脈寬-瞬態(tài)熱阻抗圖4:瞬態(tài)熱阻抗Fig. 5. Typical output characteristics, T, = 25 C b = '(Vqs)漏源極電壓-漏極電流圖5:典型輸出特性Fig. 6. Typical on-state resistance, T= 25 C. RpS(ON) = fQ d)漏極電流-漏源極導(dǎo)通阻抗圖6:典型導(dǎo)通阻抗Fig. 7, Typical transfer charac

9、teristics. ID = %)Fig. & Typical transconductance, T = 25 Cg3 = f(廟圖8:典型跨導(dǎo)Fig ,9. Normalised drain-source on-state resistance.DS(O/DS(ON)25 C =我丁)Fig. 10. Gate threshold voltage.返5m廣 f(T)； conditions： iD= 1 mA; VDS = VGS圖10：門(mén)閥電壓Fig. 11. Sub-threshold drain current.Id = f(Gs)： conditions: 7；- = 25 C %s =圖ii：閾漏極電流100C0Capacitances, Ciss, Coss, Crs號(hào)(pF)0.1110100Drain-Source Voltage, VDS (V)Fig,僅 Typical capacitances, G.皿,G4C = /(V); conditions: VGS = 0 V; f= 1 MHz圖12:典型電容值Source-Drain Vcltag% VSDS (V)Fig. 13. Typical reverse diode current.IF = f(VSDS); conditions: VGS = 0 V;