IntroductiontotheSemiconductorIndustry學(xué)習(xí)教案

1、會(huì)計(jì)學(xué)1IntroductiontotheSemiconductorIndustry第一頁(yè)，編輯于星期六：十五點(diǎn) 五十二分。第1頁(yè)/共55頁(yè)第二頁(yè)，編輯于星期六：十五點(diǎn) 五十二分。 第2頁(yè)/共55頁(yè)第三頁(yè)，編輯于星期六：十五點(diǎn) 五十二分。第3頁(yè)/共55頁(yè)第四頁(yè)，編輯于星期六：十五點(diǎn) 五十二分。BulkyProne to loose connections and vacuum leakageFragile Requirement of large amount of power to operateDegradation/deterioration rapidlyENIAC and other

2、 tube-based computers was a limited operation time due toTube burnout!第4頁(yè)/共55頁(yè)第五頁(yè)，編輯于星期六：十五點(diǎn) 五十二分。Size, ft 30X50Weight,tons 30Vacuum tubes 18,000Resistors 70,000Capacitors 10,000Switches 6000Power requirement, W 150,000Cost(in 1940s) $400,000 Progress in the mid 1970s, the entire eleconics of the EN

3、IAC made on a 3/8-in2 piece of silicon, drawing less power than a light bulb and cost less than $20!第5頁(yè)/共55頁(yè)第六頁(yè)，編輯于星期六：十五點(diǎn) 五十二分。 第6頁(yè)/共55頁(yè)第七頁(yè)，編輯于星期六：十五點(diǎn) 五十二分。PRODUCT APPLICATIONSINFRASTRUCTUREConsumers: Computers Automotive Aerospace Medical other industriesCustomer ServiceOriginal Equipment Manufact

4、urersPrinted Circuit Board IndustryIndustry Standards (SIA, SEMI, NIST, etc.) Production ToolsUtilities Materials & ChemicalsMetrology ToolsAnalytical LaboratoriesTechnical WorkforceColleges & UniversitiesChipManufacturer第7頁(yè)/共55頁(yè)第八頁(yè)，編輯于星期六：十五點(diǎn) 五十二分。First Transistor, Bell Lab, 1947Photo courtesy: AT&

5、T Archive第8頁(yè)/共55頁(yè)第九頁(yè)，編輯于星期六：十五點(diǎn) 五十二分。 Advantages over vacuum tubes No vacuum Small size Light in weight Low power consumption Long lifetime First name: transfer resistor =Transistor第9頁(yè)/共55頁(yè)第十頁(yè)，編輯于星期六：十五點(diǎn) 五十二分。John Bardeen, William Shockley and Walter BrattainPhoto courtesy: Lucent Technologies Inc.F

6、irst Transistor and Its Inventors第10頁(yè)/共55頁(yè)第十一頁(yè)，編輯于星期六：十五點(diǎn) 五十二分。 第11頁(yè)/共55頁(yè)第十二頁(yè)，編輯于星期六：十五點(diǎn) 五十二分。Photo courtesy of Texas Instruments, Inc.第12頁(yè)/共55頁(yè)第十三頁(yè)，編輯于星期六：十五點(diǎn) 五十二分。IC Design: First ICPhoto courtesy: Texas Instruments第13頁(yè)/共55頁(yè)第十四頁(yè)，編輯于星期六：十五點(diǎn) 五十二分。Photo courtesy: Fairchild Semiconductor International

7、第14頁(yè)/共55頁(yè)第十五頁(yè)，編輯于星期六：十五點(diǎn) 五十二分。第15頁(yè)/共55頁(yè)第十六頁(yè)，編輯于星期六：十五點(diǎn) 五十二分。Photo courtesy of Advanced Micro DevicesPhoto courtesy ofIntel Corporation 第16頁(yè)/共55頁(yè)第十七頁(yè)，編輯于星期六：十五點(diǎn) 五十二分。Time Event Remark 1947Point contact transistor19561948C-Ge in Bell LabLess defect, uniform1949Commercial semicon device in Internationa

8、l RectifierClaude Shannon developed Chess-playing machineFather of logic & information1950Growth junction transistor for consumer electronics1951UNIVAC for US Cencus Bureau 5000 vacuum tubesTI into semiconductor industry1952Motorola established the Lab for solid-state electronics R&DMilestone of com

9、puter IBM the first computer based on stored program1953Motorola applied the first semicon patent1954TI pushed transistor radioTI developed silicon junction transistorBell Lab developed all-transistor computerBell Lab developed photoresistUp to now1955Shockley out of Bell Lab and returned to his hom

10、etown-Santa Clara and established his own company. “Silicon Valley” took place of the Eastern of US and grown into the center of semiconductorEnrolled 12 talented.Traitorous Eight-Gordon E. Moore, C. Sheldon Roberts, Eugene Kleiner, Robert N. Noyce, Victor H. Grinich, Julius Blank, Jean A. Hoerin an

11、d Jay T. Last第17頁(yè)/共55頁(yè)第十八頁(yè)，編輯于星期六：十五點(diǎn) 五十二分。Time Event Remark 1956General Electric developed solid-state silicon switch1957Transistor technology used in orbital “explorer” of USOctober 1, Robert Noyce established Fairchild company, a milestone in silicon valleyFairchild is the father of lots of semic

12、onductor companies,like AMD.Intel, Intersil, Xicor, Teledyne, A, Compaq, Sun etc.also birthed from the talented people from Fairchild. Output of semiconductor more more 100million USD.1958Gray designed the all-transistor computerFather of SupercomputerAugust 28, Jack Kilby in TI demonstrated the fir

13、st IC2000 Nobel PrizeTransistors used in missile in US ForceDefense of US, NASA into the two big customers of semiconductor industry1959NI established in DanburyMilestone of computer Rober Noyce invented the planar technology and IC can be batch-fabricatedThe semiconductor changed from “invention er

14、a” into “commercial era”Noyce was regarded as the co-inventor of ICs.第18頁(yè)/共55頁(yè)第十九頁(yè)，編輯于星期六：十五點(diǎn) 五十二分。Time Event Remark 1964Noyce solved the interconnection problems, using lithography, etching, depositionMoore put forward the famous “Moores Law”1968Noyce and Moore established Intel Company, later Grov

15、e joined in.Solved the surface state problem1969J. D. Schmidt in Fairchild proposed the random store memoryR. H. Bennard bit memory 1970Metal-Oxide-Semiconductor was invented by General Microelectronics and General InstrumentsMemory and Microprocessor become important1970Intel pushed 1k memoryFather

16、 of Supercomputer19744K momoryGate linewidth 10m197616KGate linewidth 5m 197964KGate linewidth 3m1983256K momoryGate linewidth 1.5m19861MGate linewidth 1.2m 19894MGate linewidth 0.8m199216MGate linewidth 0.5m 199564MGate linewidth 0.35m1998256M momoryGate linewidth 0.25m第19頁(yè)/共55頁(yè)第二十頁(yè)，編輯于星期六：十五點(diǎn) 五十二分

17、。第20頁(yè)/共55頁(yè)第二十一頁(yè)，編輯于星期六：十五點(diǎn) 五十二分。A single integrated circuit, also known as a die, chip, and microchip第21頁(yè)/共55頁(yè)第二十二頁(yè)，編輯于星期六：十五點(diǎn) 五十二分。Circuit IntegrationSemiconductorIndustry Time PeriodNumber ofComponents perChipNo integration (discrete components)Prior to 19601Small scale integration (SSI)Early 1960

18、s2 to 50Medium scale integration (MSI)1960s to Early 1970s50 to 5,000Large scale integration (LSI)Early 1970s to Late1970s5,000 to 100,000Very large scale integration (VLSI)Late 1970s to Late1980s100,000 to 1,000,000Ultra large scale integration (ULSI)1990s to present 1,000,000第22頁(yè)/共55頁(yè)第二十三頁(yè)，編輯于星期六：

19、十五點(diǎn) 五十二分。Photo courtesy of Intel Corporation, Pentium III第23頁(yè)/共55頁(yè)第二十四頁(yè)，編輯于星期六：十五點(diǎn) 五十二分。 第24頁(yè)/共55頁(yè)第二十五頁(yè)，編輯于星期六：十五點(diǎn) 五十二分。200019921987198119751965 50 mm 100 mm 125 mm 150 mm 200 mm 300 mm第25頁(yè)/共55頁(yè)第二十六頁(yè)，編輯于星期六：十五點(diǎn) 五十二分。Silicon substratedrainSilicon substrateTop protective layerMetal layerInsulation lay

20、ersRecessed conductive layerConductive layer第26頁(yè)/共55頁(yè)第二十七頁(yè)，編輯于星期六：十五點(diǎn) 五十二分。Wafer Preparationincludes crystalgrowing, rounding,slicing and polishing.Wafer Fabricationincludes cleaning,layering, patterning,etching and doping.Assembly and Packaging:The wafer is cutalong scribe linesto separate each die

21、.Metal connectionsare made and thechip is encapsulated.Test/Sort includesprobing, testing andsorting of each die onthe wafer.Final Test ensures ICpasses electrical andenvironmentaltesting.Defective die1.2.3.Scribe lineA single dieAssemblyPackaging4.5.Wafers sliced from ingotSingle crystal silicon第27

22、頁(yè)/共55頁(yè)第二十八頁(yè)，編輯于星期六：十五點(diǎn) 五十二分。1.Crystal Growth2.Single Crystal Ingot3.Crystal Trimming and Diameter Grind4.Flat Grinding5.Wafer Slicing 6.Edge Rounding 7.Lapping 8.Wafer Etching 9.Polishong10.Wafer InspectionSlurryPolishing tablePolishing headPolysiliconSeed crystalHeaterCrucible(Note: Terms in Figure

23、 1.7 are explained in Chapter 4.)第28頁(yè)/共55頁(yè)第二十九頁(yè)，編輯于星期六：十五點(diǎn) 五十二分。Photo courtesy of Advanced Micro Devices-Dresden, S. Doering第29頁(yè)/共55頁(yè)第三十頁(yè)，編輯于星期六：十五點(diǎn) 五十二分。第30頁(yè)/共55頁(yè)第三十一頁(yè)，編輯于星期六：十五點(diǎn) 五十二分。 第31頁(yè)/共55頁(yè)第三十二頁(yè)，編輯于星期六：十五點(diǎn) 五十二分。Common IC FeaturesContact HoleLine WidthSpace第32頁(yè)/共55頁(yè)第三十三頁(yè)，編輯于星期六：十五點(diǎn) 五十二分。1988199

24、2199519971999200120022005CD( m)1.00.50.350.130.10第33頁(yè)/共55頁(yè)第三十四頁(yè)，編輯于星期六：十五點(diǎn) 五十二分。1997 1999 2001 20032006201220091600140012001000 800600400200Microprocessor Total Transistors in MillionsYearRedrawn from Semiconductor Industry Association, The National Technology Roadmap for Semiconductors,

25、 1997.第34頁(yè)/共55頁(yè)第三十五頁(yè)，編輯于星期六：十五點(diǎn) 五十二分。Intel co-founder Gorden Moore notice in 1964Number of transistors doubled every 12 months while price unchangedSlowed down in the 1980s to every 18 monthsAmazingly still correct, likely to keep until 2010.第35頁(yè)/共55頁(yè)第三十六頁(yè)，編輯于星期六：十五點(diǎn) 五十二分。Year 4004 8080 8086 80286 8

26、0386 80486 Pentium Pentium Pro100M10M1M100K10KTransistors19751980198519901995 20005001Used with permission from Proceedings of the IEEE, January, 1998, 1998 IEEEThe number of transistors on a chip double every 18 months.第36頁(yè)/共55頁(yè)第三十七頁(yè)，編輯于星期六：十五點(diǎn) 五十二分。Integration levelAbbreviation Number of

27、devices on a chipSmall Scale IntegrationSSI2 to 50Medium Scale IntegrationMSI50 to 5,000Large Scale IntegrationLSI5,000 to 100,000Very Large Scale IntegrationVLSI100,000 to 10,000,000Ultra Large Scale IntegrationULSI10,000,000 to 1,000,000,000Super Large Scale Integration SLSI over 1,000,000,000第37頁(yè)

28、/共55頁(yè)第三十八頁(yè)，編輯于星期六：十五點(diǎn) 五十二分。199519971999200120042007Minimum feature size ( m)0.330.100.07DRAMBits/chip64 M256 M1 G4 G16 G64 GCost/bits volume(millicents)0.0170.0070.0030.0010.00050.0002MicroprocessorTransistors/cm24 M7 M13 M25 M50 M90 MCost/Transistor volume(millicents)0.050.02A

29、SICTransistors/cm22 M4 M7 M13 M25 M40 MCost/Transistor volume(millicents)50.030.020.01Wafer size (mm)200200200 -300300300300 400 (?)第38頁(yè)/共55頁(yè)第三十九頁(yè)，編輯于星期六：十五點(diǎn) 五十二分。Feature Size and Wafer SizeChip made with 0.35 m technologywith 0.25 m technologywith 0.18 m technology300 mm200 mm 150 mmChipor

30、 die第39頁(yè)/共55頁(yè)第四十頁(yè)，編輯于星期六：十五點(diǎn) 五十二分。0.014 micron lower gate widthPhoto courtesy: NEC Corporation第40頁(yè)/共55頁(yè)第四十一頁(yè)，編輯于星期六：十五點(diǎn) 五十二分。Size of the atom第41頁(yè)/共55頁(yè)第四十二頁(yè)，編輯于星期六：十五點(diǎn) 五十二分。第42頁(yè)/共55頁(yè)第四十三頁(yè)，編輯于星期六：十五點(diǎn) 五十二分。1990s Microchip(525 million transistors)1960s TransistorU.S. coin, 10 cents第43頁(yè)/共55頁(yè)第四十四頁(yè)，編輯于星期六：

31、十五點(diǎn) 五十二分。10864201997199920012003200620092012Average Power in micro Watts (10-6 W)YearRedrawn from Semiconductor Industry Association, National Technology Roadmap, 1997第44頁(yè)/共55頁(yè)第四十五頁(yè)，編輯于星期六：十五點(diǎn) 五十二分。19721976198019841988199219962000Year7006005004003002001000Long-Term Failure Rate Goalsin parts per mil

32、lion (PPM)第45頁(yè)/共55頁(yè)第四十六頁(yè)，編輯于星期六：十五點(diǎn) 五十二分。Redrawn from C. Chang & S. Sze, McGraw-Hill, ULSI Technology, (New York: McGraw-Hill, 1996), xxiii.19301940 1950 1960 1970 1980 1990 2000Year104102110-210-410-610-810-10Relative valueDevice size= Price=Bipolar transistorMSILSIVLSIULSIStandard tubeElectron tub

33、esSemiconductor devicesIntegrated circuitsMiniature tube第46頁(yè)/共55頁(yè)第四十七頁(yè)，編輯于星期六：十五點(diǎn) 五十二分。 第47頁(yè)/共55頁(yè)第四十八頁(yè)，編輯于星期六：十五點(diǎn) 五十二分。 $100,000,000,000$10,000,000,000$1,000,000,000$100,000,000$10,000,000Cost197019801990200020102020YearActual CostsProjected CostsUsed with permission from Proceedings of IEEE, Januar

34、y, 1998 1998 IEEE第48頁(yè)/共55頁(yè)第四十九頁(yè)，編輯于星期六：十五點(diǎn) 五十二分。MaterialsDesignMasksIC FabTestPackagingFinal TestThermal ProcessesPhoto-lithographyEtch PR stripImplant PR stripMetallizationCMPDielectric depositionWafers第49頁(yè)/共55頁(yè)第五十頁(yè)，編輯于星期六：十五點(diǎn) 五十二分。Manufacturing TechnicianWafer Fab TechnicianMaintenance TechnicianLab TechnicianYield & Failure Analysis TechnicianEquipment TechnicianEquipment EngineerAssociate EngineerProcess EngineerProduction SupervisorProduction ManagerMaintenance SupervisorFab ManagerMainten