工學(xué)英語班電力電子技術(shù)PPT教案

1、會(huì)計(jì)學(xué)1工學(xué)英語班電力電子技術(shù)工學(xué)英語班電力電子技術(shù)devices2.6 Power integrated circuits and integrated power electronics modules第1頁/共95頁第2頁/共95頁n Major material used in power semiconductor devices Silicon第3頁/共95頁p=vi=0Off-stateCurrent through the device is 0i=0p=vi=0On-stateVoltage across the device is 0v=0第4頁/共95頁packaging

2、 and heat sink are necessary.第5頁/共95頁O n -s ta te(c o n d u c tio n s ta te )tu rn in g -o ffO ff-s ta te(b lo c k in g s ta te )tu rn in g-o ntttv vi ip p第6頁/共95頁Control circuitDetection(measurement)circuitdrivecircuitPower circuit(power stage,main circuit)Control circuit (in a broad sense)Power el

3、ectronic system:Electric isolation:optical or magnetic Protection circuit is also very often used in power electronic system especially for the expensive power semiconductors.第7頁/共95頁CEGA power electronic device must have at least two terminals allowing power circuit current flow through.A power ele

4、ctronic device usually has a third terminal control terminal to control the states of the device.Drive Circuit第8頁/共95頁has only two terminals and can not be controlled by control signal. The on and off states of the device are determined by the power circuit.is turned-on by a control signal and turne

5、d-off by the power circuitThe on and off states of the device are controlled by control signals.第9頁/共95頁第10頁/共95頁第11頁/共95頁passive components by power electronic circuits could be very different from those by ordinary circuits.第12頁/共95頁CathodeAnodeAnodeCathode第13頁/共95頁-。-。-。-。-。-。-。-。-。-。-。-。-。-。-。+-

6、+-+-+-+-p regionn regionDirection ofinner electric fieldSpace charge region(depletion region,potential barrier region)第14頁/共95頁V+-npWoW+-第15頁/共95頁第16頁/共95頁Larger size Vertically oriented structure n drift region (p-i-n diode) Conductivity modulation250mBreakdown voltage dependent10 mpNd=10 cmn subst

7、rate-319Na=10 cm-319+n epiNd=10 cm-314pNd=10 cmn substrate-319+Na=10 cm-319+n epi-Nd=10 cm-314iAnodeCathode+-V-第17頁/共95頁第18頁/共95頁Avalanche breakdown Thermal breakdown第19頁/共95頁power diode.第20頁/共95頁IOIFUTOUFU第21頁/共95頁Reverse-recovery time, reverse-recovery charge, reverse-recovery peak current.a)IFUFt

8、Ft0trrtdtft1t2tURURPIRPdiFdtdiRdt第22頁/共95頁forward-recovery timeb)UFPuiiFuFtfrt02V第23頁/共95頁第24頁/共95頁standard recoveryReverse recovery time and charge specified. trr is usually less than 1s, for many less than 100 ns ultra-fast recovery diode. A majority carrier device Essentially no recovered charge,

9、 and lower forward voltage. Restricted to low reverse voltage and blocking capability (less than 200V)第25頁/共95頁第26頁/共95頁general purpose diodes.第27頁/共95頁highest power-handling capability. 第28頁/共95頁KGA第29頁/共95頁第30頁/共95頁第31頁/共95頁)(121CBO2CBO1G2AIIII第32頁/共95頁第33頁/共95頁OUAkIAIHIG2IG1IG=0UboUDSMUDRMURRMURS

10、Mincreasing IG第34頁/共95頁100%90%10%uAKttO0tdtrtrrtgrURRMIRMiA第35頁/共95頁第36頁/共95頁IOUIG=0KGAAGKGKAGT1T2第37頁/共95頁第38頁/共95頁AGKGGKN1P1N2N2P2b)a)forms being used to layout the gates and cathodes.GKA第39頁/共95頁turn-off capability.nLarge 2n1+2 is just a little larger than the critical value 1. nShort distance fr

11、om gate to cathode makes it possible to drive current out of gate.RNPNPNPAGSKEGIGEAIKIc2Ic1IAV1V2第40頁/共95頁Ot0t圖1-14iGiAIA90% IA10% IAtttftstdtrt0t1t2t3t4t5t6第41頁/共95頁第42頁/共95頁bec第43頁/共95頁第44頁/共95頁holeselectronsEbEcibic=ibie=(1+ib第45頁/共95頁cut-off regionAmplifying (active) regionOIib3ib2ib1ib1ib2ib3Uc

12、eSaturation region第46頁/共95頁圖1-17ibIb1Ib2Icsic0090%Ib110%Ib190%Ics10%Icst0t1t2t3t4t5tttofftstftontrtd第47頁/共95頁第48頁/共95頁S O AOIcIcMPS BPcMUceUceM第49頁/共95頁GSDP channelGSDN channel第50頁/共95頁第51頁/共95頁np-n- junction is reverse-biasednoff-state voltage appears across n- region第52頁/共95頁np- n- junction is sli

13、ghtly reverse biasednpositive gate voltage induces conducting channelndrain current flows through n- region and conducting channelnon resistance = total resistances of n- region, conducting channel,source and drain contacts, etc.第53頁/共95頁第54頁/共95頁RsRGRFRLiDuGSupiD+UE第55頁/共95頁topology, control, snubb

14、er circuit and the parasitic of the power circuit.第56頁/共95頁第57頁/共95頁第58頁/共95頁nUsually used at voltages less than 600V and power less than 10kWn1000V devices are available, but are useful only at low power levels(100W)nPart number is selected on the basis of on-resistance rather than current rating第5

15、9頁/共95頁第60頁/共95頁第61頁/共95頁EGCN+N-a)PN+N+PN+N+P+EmitterGateCollectorInjecting layerBuffer layerDrift regionJ3J2J1第62頁/共95頁GEC+-+-+-IDRNICVJ1IDRonDrift regionresistanceGCE第63頁/共95頁OActive regionCut-off (forwardblocking) regionSaturation region(On region)Reverseblocking regionICURMUFMUCEUGE(th)UGE第64頁/共

16、95頁nIGBT turn-on is similar to power MOSFET turn-onnThe major difference between IGBT turn-off and power MOSFET turn-off:nThere is current tailing in the IGBT turn-off due to the stored charge in the drift region.第65頁/共95頁nModern IGBTs are essentially latch-up proof第66頁/共95頁nSOA of IGBTnThe IGBT has

17、 a rectangular SOA with similar shape to the power MOSFET.nUsually fabricated with an anti-parallel fast diode第67頁/共95頁第68頁/共95頁第69頁/共95頁第70頁/共95頁第71頁/共95頁nOnce believed as the most promising device, but still not commercialized in a large scale. The future remains uncertain. 第72頁/共95頁第73頁/共95頁Band

18、gapE E4E E3E E2E E1第74頁/共95頁610/V cm2/cmV S C第75頁/共95頁P(yáng)hysical Properties of Silicon Carbide第76頁/共95頁第77頁/共95頁Wafer Production第78頁/共95頁Infineon SiC overviewnUnipolar devicesExisting products: Diode based: 300V 1200V (1700V can be realized on demand)Under development: JFET based: 600V 1500V (discrete

19、, cascodes in modules) Expansion to higher voltage classes (single chip / super-cascode) possiblenBipolar devicesNo development activities at IFXSolid volume forecasts and cost targets required第79頁/共95頁第80頁/共95頁Integrationof power electronic devicesSmart power integrated circuit (Smart power IC, SPIC, Smart switch)High voltage integrated circuit (HVIC) Ordinary power module:just power devices packaged togetherIntegrated power electronics Module(IPEM): power devices, drive circuit, protection circuit, control circuitIntelligent power module (IPM):power devices, drive circuit, protection circu