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PART1ElectricalandElectronicEngineeringBasicsSection4PowerSemiconductorDevicesNewWordsandExpressions
LanguagepointsComplementNewWordsandExpressionsconvertern.轉(zhuǎn)換器,換流器,變流器matrixn.模型,矩陣dioden.二極管,半導(dǎo)體二極管thyristorn.晶閘管triacn.三端雙向晶閘管GTO門極可關(guān)斷晶閘管BJT雙極結(jié)型晶體管powerMOSFET電力MOS場效應(yīng)晶體管SIT靜態(tài)感應(yīng)晶體管NewWordsandExpressionsIGBT絕緣柵雙極型晶體管MCTMOS控制晶閘管IGCT集成門極換向晶閘管rectificationn.整流feedbackn.反饋freewheelingn.單向傳動snubbern.緩沖器,減震器intrinsicadj.固有的,體內(nèi)的,本征NewWordsandExpressionsforwardbiased正向偏置conductionn.
導(dǎo)電,傳導(dǎo)reversebiased反向偏置leakagecurrent漏電流thresholdn.門限,閾限,極限breakdownn.擊穿,雪崩recoveryn.恢復(fù)schottkydiode肖基特二極管NewWordsandExpressionsworkhorsen.重載,重負荷thyratronn.閘流管breakovern.導(dǎo)通latchingcurrent閉鎖電流holdingcurrent保持電流phasecontrolled相控的asymmetricadj.不對稱的forcecommutated強制換向NewWordsandExpressionsSMPS開關(guān)電源BLDM無刷直流電動機steppermotor步進電動機hybridn.混合emittern.發(fā)射極saturationn.飽和LanguagePoints[1]Powersemiconductordevicescons-titutetheheartofmodernpowerelectronicapparatus.Theyareusedinpowerelec-tronicconversionintheformofamatrixofon-offswitches.Andtheswitchingmodepowerconversiongiveshighefficiency.LanguagePoints[3]Theyarealsousedinfeedbackandthefreewheelingfunctionsofconvertersandsnubbers.AtypicalpowerdiodehasP-I-Nstructure,thatis,itisaP-Njunctionwithanearintrinsicsemiconductorlayer(I-layer)inthemiddletosustainreversevoltage.LanguagePoints[4]Ifthereversevoltageexceedsathre-sholdvalue,calledthebreakdownvoltage,thedevicegoesthroughavalanchebreak-down,whichiswhenreversecurrentbecomeslargeandthediodeisdestroyedbyheatingduetolargepowerdissipationinthejunction.LanguagePoints[5]Thyristors,orsilicon-controlledrectifiers(SCRs)havebeenthetraditionalworkhorsesforbulkpowerconversionandcontrolinindustry.Themoderneraofsolid-statepowerelectronicsstartedduetotheintroductionofthisdeviceinthelate1950s.LanguagePoints[6]Often,itisafamilynamethatincludesSCR,TRIAC,GTO,MCT,andIGCT.Thy-ristorscanbeclassifiedasstandard,orslowphase-control-typeandfast-switching,voltage-fedinverter-type.Theinverter-typehasrecentlybecomeobsolete.LanguagePoints[7]Basically,thyristorisathree-junctionP-N-P-Ndevice,whereP-N-PandN-P-Ncomponenttransistorsareconnectedinregenerativefeedbackmode.Thedeviceblocksvoltageinboththeforwardandreversedirection(symmetricblocking).LanguagePoints[8]Atriacshasacomplexmultiple-junctionstructure,butfunctionally,itisanintegrationofapairofphase-controlledthyristorsconnectedininverse-parallelonthesamechip.LanguagePoints[9]Awell-designedRCsnubberisessen-tialforatriaccircuit.Triacsareusedinlightdimming,heatingcontrol,alliance-typemotordrives,andsolid-staterelayswithtypically50/60Hzsupplyfrequency.LanguagePoints[11]GTOsareavailablewithasymmetricandsymmetricvoltage-blockingcapabilities,whichareusedinvoltage-fedandcurrent-fedconverters,respectively.[12]GTOsareusedinmotordrives,staticVARcompensators(SVCs),andAC/DCpowersupplieswithhighpowerratings.Whenlarge-powerGTOsbecameavailable,theyoustedtheforce-commutated,voltage-fedthyristorinverters.LanguagePoints[13]Unlikethedevicesdiscussedsofar,apowerMOSFET(metal-oxidesemi-conductorfield-effecttransistor)isaunipolar,majoritycarrier,“zerojunction”,voltage-controlleddevice.[14]MOSFETsareextremelypopularinlow-voltage,low-power,andhigh-frequen-cyswitchingapplications,includeswitchingmodepowersupplies,brushlessDCmo-tors,steppermotordrives,andsolid-stateDCrelays.LanguagePoints[15]Theintroductionofinsulatedgatebipolartransistorsinthemid-1980swasanimportantmilestoneinthehistoryofpowersemiconductordevices.TheyareextremelypopulardevicesinpowerelectronicsuptomediumpowerrangeandareappliedextensivelyinDC/ACdrivesandpowersupplysystems.TheyoustedBJTsintheupperrange,andarecurrentlyoustingGTOsinthelowerpowerrange.LanguagePoints[16]AnIGBTisbasicallyahybridMOS-gatedturn-on/offbipolartransistorthatcombinestheadvantagesofbothaMOSFETandBJT.ItsarchitectureisessentiallysimilartothatofaMOSFET,exceptanadditionalP+layerhasbeenaddedatthecollectorovertheN+drainlayeroftheMOSFET.LanguagePoints[17]AnMOS-controlledthyristor,asthenameindicates,isathyristor-like,trigger-into-conductionhybriddevicethatcanbeturnedonoroffbyashortvoltagepulseontheMOSgate.Thedevicehasamicrocellconstruction,wherethousandsofmicrodevicesareconnectedinparallelonthesamechip.Thecellstructureissomewhatcomplex.LanguagePoints[18]TheMCTwascommerciallyintroducedin1992,andcurrently,medium-powerdevicesareavailablecommercially.Thefutureacceptanceofthedeviceremainsuncertainatthispoint.[19]Basically,itisahigh-voltage,high-power,hard-driven,asymmetric-blockingGTOwithunityturn-offcurrentgain.LanguagePoints[21]IGCThasbeenappliedinpowersystemintertieinstallationsandmedium-powerindustrialdrives.ExercisesI.TranslatethefollowingintoChinese
Allthesimplecircuitelementsthatwillbeconsideredintheworkthatfollowscanbeclassifiedaccordingtotherelationshipofthecurrentthroughtheelementtothevoltageacrosstheelement.Forinstance,ifthevoltageacrosstheelementisdirectlyproportionaltothecurrentthroughit,oru=ki,weshallcalltheelementaresistor.Othertypesofsimplecircuitelementshaveaterminalvoltagewhichisproportionaltothetimederivativeortheintegralwithrespecttotimeofthecurrent.ThereExercisesI.TranslatethefollowingintoChinese
arealsoelementsinwhichthevoltageiscompletelyindependentofthecurrentorthecurrentiscompletelyindependentofthevoltage;thesearetheindependentsources.Furthermore,weshallneedtodefinespecialkindsofsourcesinwhichthesourcevoltageorcurrentdependsuponacurrentorvoltageelsewhereinthecircuit;suchsourceswillbetermeddependentsourcesorcontrolledsources.VocabularyCharacteristicI一、前綴(prefixes)1.anti-/counter-
反,抗,防,逆,耐
antivirus
防病毒;
anti-interference抗干擾;anti-phase
反相;
counterclockwise逆時針方向的(地);countercurrent反向電流。2.
auto-
自動、自
autotransformer
自耦變壓器;
autocoder自動編碼器;
automodulation自調(diào)制;
automobile自動車。VocabularyCharacteristicI3.bi-
雙,重
bipolarrelay
雙極繼電器;
bilateral兩邊的,雙邊的;雙金屬。4.co-
共,同,一起,相互
coaxialcable
同軸電纜;
cosine
余弦。5.de-
表示相反動作
demodulator解調(diào)器;
deform
變形。6.deci-
表示十分之一,分
decimal十進制;decibel分貝;decimeter分米VocabularyCharacteristicI7.di-雙,偶,兩
diode
二極管;dipole
偶極子;
dioxide
二氧化物。8.dis-
表示相對單詞的反義詞
displace
位移;
disconnect解開,斷開。9.equi-同等,均
equipartition均分;equilibrium均衡,平衡。10.hydro-
水,氫化
hydrodynamic
水力的,水壓的,流體動力學(xué)的;
hydroelectric水力發(fā)電的。11.
hyper-
高,超,重,極度
VocabularyCharacteristicI12.in-
表示否定
inaccurate不精確的;invariable不變的。13.inter-
相互,際間
internet互聯(lián)網(wǎng);interchange
互換;
interface
界面;intercitytrain
城際列車。14.mal-不,失
malfunction失靈,故障;malformation畸形;
maltreat濫用,亂用。15.mega-兆,百萬
megawatt兆瓦;megaton百萬噸級。VocabularyCharacteristicI16.micro-微觀,微型,百萬分之一
microelectronics
微電子學(xué);
microcomputer微型計算機;
microfilm
微縮膠卷;micrometer微米;
microwave微波。17.mini-
小
minicomputer小型計算機;
minibus微型公共汽車。18.multi-多
multi-frequency多頻率。19.over-過,超,太
overfrequency
超頻;overcharge
過度充電。VocabularyCharacteristicI20.photo-光,光電,光敏
photocell光電池;photohead光電傳感頭;
photoreceptor感光器。21.post-后
postfault故障后。22.pre-
在前,預(yù)先
preheat
預(yù)熱;precondition
前提,先決條件。23.semi-
半
semiconductor
半導(dǎo)體。24.sub-
子,亞,低,次,副
subsystem子系統(tǒng),分系統(tǒng);substation變電站
subcode
子碼。VocabularyCharacteristicI25.tele-遠,電
telemetry遙測術(shù);telecommunication
電信;
teleswitch遙控開關(guān);telecontrol
遙控。26.thermo-
熱
thermostat
恒溫器;thermoelectric熱電的;
thermo-fuse
熱熔絲。27.tri-
三
triangle
三角形。
28.ultra-
超,過
ultra-high-frequency超高頻;ultrasonic超聲波29.un-表示相反的意思
unequal不等;unvarying不變的。VocabularyCharacteristicII一、后綴(suffixes)1.–able
形容詞的詞尾,表示“……的”
stable
穩(wěn)定的;reliable
可靠的;
comparable可比較的。2.–al
形容詞詞尾,表示“……的”
digital
數(shù)字的;functional
功能的,函數(shù)的。3.-ance/-ence
名詞詞尾
capacitance電容;resistance電阻;
reactance
電抗;existence
存在。4.–ary
形容詞詞尾,表示“……”
elementary
初步的;momentary
瞬息的。VocabularyCharacteristicII5.–en
一般是形容詞+en構(gòu)成,表示“使……”
soften軟化;
harden
使……變硬。6.-er/-or
表示“機器、設(shè)備、物件等”
air-oilbooster
氣-液增壓器;
aircompressor
空氣壓縮機。7.–free
形容詞詞尾,表示“無……的”,“免于……的”
loss-free
無損耗的;dust-free
無塵的。8.–ics
名詞詞尾,表示學(xué)科名稱
physics
物理學(xué);mathematics
數(shù)學(xué);
electronics電子學(xué)。VocabularyCharacteristicII9.–ity
構(gòu)成抽象名詞,表示“性,度”
stability
穩(wěn)定性;reliability可靠性;
feasibility
可行性。10.–ive
形容詞詞尾,表示“……的”
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