用英語寫學(xué)術(shù)論文的目的主要有兩個

用英語寫學(xué)術(shù)論文的目的主要有兩個，一是參加國際學(xué)術(shù)會議，在會議上宣講，促進(jìn)學(xué)術(shù)交流；二是在國際學(xué)術(shù)刊物上發(fā)表，使國外同行了解自己的研究成果，同樣也是出于學(xué)術(shù)交流的目的。

不同的學(xué)科或領(lǐng)域、不同的刊物對論文的格式有不同的要求，但各個領(lǐng)域的研究論文在文體和語言特點上都有許多共性。了解了這些語言共性，便會起到觸類旁通的作用。

對我國青年學(xué)者或?qū)W生來說，用英語寫作的難點不是沒有寫作材料，不是不熟悉專業(yè)詞匯，也不是沒有打下良好的英語基礎(chǔ)。用英語寫論文難，是因為不太了解學(xué)術(shù)英語的語言特點。關(guān)于學(xué)術(shù)英語寫作的語言技巧，我們已在第一部分作了較詳細(xì)的介紹。此部分討論學(xué)術(shù)論文寫作的方法，包括學(xué)術(shù)論文寫作中常用的句型結(jié)構(gòu)，我們都在此作較詳細(xì)介紹，以便讀者模仿練習(xí)，將寫作工作化難為易。

一般來說，一篇完整規(guī)范的學(xué)術(shù)論文由以下各部分構(gòu)成：

Title(標(biāo)題)

Abstract(摘要)

Keywords(關(guān)鍵詞)

Tableofcontents(目錄)

Nomenclature(術(shù)語表)

Introduction(引言)

Method(方法)

Results(結(jié)果)

Discussion(討論)

Conclusion(結(jié)論)

Acknowledgement(致謝)

Reference(參考文獻(xiàn))

Appendix(附錄)

其中Title，Abstract，Introduction，Method，Result，Discussion，Conclusion，Reference等八項內(nèi)容是必不可少的(其他內(nèi)容根據(jù)具體需要而定)。在這八項內(nèi)容中，讀者最多的是Title，Abstract和Introduction部分，讀者會根據(jù)這些內(nèi)容來決定是否閱讀全文。也就是說，一篇研究論文贏得讀者的多少，在很大程度上取決于Title，Abstract和Introduction寫得好壞。因此這三項內(nèi)容將各分章詳細(xì)加以講述。

學(xué)術(shù)論文的正文一般包括Method，Result，Discussion三個部分。這三部分主要描述研究課題的具體內(nèi)容、方法，研究過程中所使用的設(shè)備、儀器、條件，并如實公布有關(guān)數(shù)據(jù)和研究結(jié)果等。Conclusion是對全文內(nèi)容或有關(guān)研究課題進(jìn)行的總體性討論。它具有嚴(yán)密的科學(xué)性和客觀性，反映一個研究課題的價值，同時提出以后的研究方向。

標(biāo)題的寫法

論文標(biāo)題是全文內(nèi)容的縮影。讀者通過標(biāo)題便能夠預(yù)測論文的主要內(nèi)容和作者的意圖，從而決定是否閱讀全文。因此，為了使文章贏得有關(guān)領(lǐng)域里眾多的讀者，論文的標(biāo)題必須用最精煉的語言恰如其分地體現(xiàn)全文的主題和核心。本章主要探討英語學(xué)術(shù)論文標(biāo)題的語言特點及寫法。

6.1標(biāo)題的長度

標(biāo)題單詞總數(shù)名詞數(shù)介詞數(shù)形容詞等

1)FireResistantSteelsforConstruction:Design,PropertiesandMicrochemistry9612

2)DampingCapacityofShapeMemoryAlloy6510

3)MicroelectronicAssemblyandPackagingTechnology:BarriersandNeeds8503

14)SolidOxideFuelCell:ASurvey6402

5)ProgressonFuelCellandItsMaterials7412

6)ComputerSimulationandExperimentalStudyonColdShutDuringMoldFilling11524

英語科技論文中，標(biāo)題不宜過長，大多為8—12個單詞左右。表6.1和表6.2列出了一些學(xué)術(shù)論文的標(biāo)題的字?jǐn)?shù)及詞性統(tǒng)計資料。

表6.1學(xué)術(shù)論文標(biāo)題中字?jǐn)?shù)及詞性統(tǒng)計(一)

標(biāo)題單詞總數(shù)名詞數(shù)介詞數(shù)形容詞等

7)OntheFatigueLifePredictionofSpotWeldedComponents9522

8)AbsorbableImplantsinFingerFractures:ABiomechanicalandComparativeStudy10414

9)AcousticsofLongSpaces:TheoryandApplication74l2

10)InvestigationofAirBagsDeploymentForcesonOut-of-PositionOccupant720

11)Semi-IntegralAbutmentsinBridgeSeismicDesign63l2

12)HighSpeedFlowSensorandFluidPowerSystemsModelling9702

13)SurfaceEngineeringofPolymersforBiomedicalApplication742l

14)TheDesignofUser-OrientedDatabaseofMaterialPerformanceBasedonClient/ServerModel13733.

15)ImpingementHeatTransferofDieselFlamesinaRapidCompressionandExpansionMachine13823

平均（約）95.51.52

來源：中國第三屆青年學(xué)術(shù)會議論文集，材料科學(xué)與工程技術(shù)。北京：中國科學(xué)技術(shù)出版社，1998。

標(biāo)題單詞總數(shù)名詞數(shù)介詞數(shù)形容詞等

1)UseofVitaminandMineralSupplementsbytheElderly9522

2)DietarySupplementandBodyImageinFemaleCollegeStudents96l2

3)KnowledgeofCardiovascularDiseaseinUniversityStudents742l

4)SevereWeatherandtheAutomobile5203

5)HeavyWeightContenders：aLookatFat7412

6)A1uminutn：IsItHazardoustoYourHealth?7313

7)TheUseofTechnologyinHigherEducationPrograms:aNationalSurvey11524

8)SustainingtheDiscussion：EcologyintheHumanitiesClassroom84l3

9)DiversityintheFutureWorkForce641l

10)ModelsofSustainingHumanandNaturalDevelopmentinanUrbanEnvironment11326

11)VariationinAcornProductionandChemistryofTwoOakOakSpecieswithrespecttoTopography14851

12)TraditionalVersusAdultStudiesStudents:theCollegeExperience8503

13)SolvingtheFoodShortageProbleminNortheastandNorthwestAfricaUsingHydroponicallyGrownPeanuts&SolarlyDistilledWater181017

14)ImpactofCancer：CopingProcessandQualityofLife9522

標(biāo)題單詞總數(shù)名詞數(shù)介詞數(shù)形容詞等

15)ApplicationofDigitalImageAnalysisforHelpingtoDefinethePrognosisOfSelectedMalignancies14635

平均(約)9.551.53

來源：TheOhioJournalofScienceVol.96(2)

表6.1中列出的是中國科協(xié)第三屆青年學(xué)術(shù)年會論文集中15篇英文論文的標(biāo)題，平均9個單詞。表6.2列出的是從TheOhioJournalofScience中隨機(jī)挑出的15篇論文的標(biāo)題，平均9．5個單詞。要想用有限的字?jǐn)?shù)概括全文的主旨，用詞必須仔細(xì)斟酌和推敲，選擇最簡練、最準(zhǔn)確、最貼切的詞來表達(dá)全文的主要內(nèi)容。

6.2標(biāo)題的用詞

從表6.1和表6.2可以看出，標(biāo)題中用得最多的是名詞(包括動名詞)，平均占總單詞數(shù)的50％～60％之高。其中有的標(biāo)題中80％以上的詞為名詞。除名詞外，用得較多的是介詞，有時使用形容詞、冠詞、連詞、副詞。

標(biāo)題是對全文重要內(nèi)容的高度概括，因此用詞要貼切、中肯，不能有任何隨意性。為了便于檢索，標(biāo)題中所用的詞盡量使用表達(dá)全文內(nèi)容的關(guān)鍵詞，下面舉例說明標(biāo)題中關(guān)鍵詞的出現(xiàn)率。例1

a．標(biāo)題：OntheFatigueLifePredictionofSpotWeldedComponents

b．關(guān)鍵詞：fatiguespotweldautomobilelifeprediction·

疲勞點焊汽車壽命預(yù)測

b．標(biāo)題：ComputerSimulationandExperimentalStudyOnColdShutDuringMoldFilling

關(guān)鍵詞：moldfillingcomputersimulationcoldshutcasting

鑄件充型計算機(jī)模擬冷隔鑄造

c．標(biāo)題：InvestigationofAirBagsDeploymentForcesonOut-ofPositionOccupant

關(guān)鍵詞：airbagout-of-positionoccupant

安全氣囊離位乘員

c．標(biāo)題：NewFatigueTestandStatisticalMethodforMetallicMaterialsUsedinVehicleTransmissions

關(guān)鍵詞：fatigueteststatisticalmethodtestspecimens

疲勞實驗統(tǒng)計方法試樣分析：

例1a中，有4個關(guān)鍵詞，在標(biāo)題里出現(xiàn)了3個，而標(biāo)題中出現(xiàn)的兩個名詞詞組fatiguelifeprediction和spotweldedcomponents都是文章的關(guān)鍵詞。

在例1b中，有4個關(guān)鍵詞，其中3個出現(xiàn)在標(biāo)題里。標(biāo)題中用了4個名詞詞組：computersimulation，experimentalstudy，coldshut，moldfilling，其中3個是關(guān)鍵詞。

例1c中有2個關(guān)鍵詞，在標(biāo)題里都出現(xiàn)。標(biāo)題中用了3個名詞或名詞詞組：investigation，airbagsdeploymentforces，out-of-positionoccupant，其中兩個是關(guān)鍵詞。

例1d中有3個關(guān)鍵詞，其中2個出現(xiàn)在標(biāo)題里。

從上面四個例子可以看出，標(biāo)題中的用詞多是文章的關(guān)鍵詞，明確、精煉，將文章的主要內(nèi)容予以高度概括。

標(biāo)題中用得最多的是名詞或名詞詞組，一般不用動詞或動詞詞組。如果用動詞，則用非謂語動詞形式，如動名詞、不定式或分詞。

從表6.1和表6.2可以看出，在標(biāo)題平均9個單詞中，有5.5個是名詞，占一半以上。除名詞外，用得較多的是介詞of，in，on等，再其次是連詞and和形容詞。偶爾也需要用一些其他詞性的詞，如副詞、冠詞等。

6.3標(biāo)題的結(jié)構(gòu)

學(xué)術(shù)文章的標(biāo)題主要有三種結(jié)構(gòu)：名詞性詞組(包括動名詞)，介詞詞組，名詞詞組介詞詞組。間或也用一個疑問句作標(biāo)題(多用在人文社會科學(xué)領(lǐng)域)，但一般不用陳述句或動詞詞組作標(biāo)題。

(1)名詞性詞組

名詞性詞組由名詞及其修飾語構(gòu)成。名詞的修飾語可以是形容詞、介詞短語，有時也可以是另一個名詞。名詞修飾名詞時，往往可以縮短標(biāo)題的長度。以下各標(biāo)題分別由兩個名詞詞組構(gòu)成。

例2

a．SevereWeatherandtheAutomobile

(名詞詞組)(名詞詞組)

b．SoilBehaviorandCriticalSoilMechanics

(名詞詞組)(名詞詞組)

c．HighSpeedFlowSensorandFluidPowerSystemsModelling

(名詞詞組)(名詞詞組)

d．TraditionalVersusAdultStudiesStudents:theCollege

(名詞詞組)(名詞詞組)

Experience

(2)介詞詞組

介詞詞組由介詞十名詞或名詞詞組構(gòu)成。如果整個標(biāo)題就是一個介詞詞組的話，一般這個介詞是“on”，意思是“對……的研究”。

例3

a．OntheDistributionofSoundinaCorridor

b．OntheCrushingMechanismofThinWalledStructures

(3)名詞／名詞詞組介詞詞組這是標(biāo)題中用得最多的結(jié)構(gòu)。

例4

a．FundamentalsofFlowMeasurement．

(名詞)(介詞詞組)

b．ScatteredSoundandReverberationonGityStreetsandinTunnels

(名詞詞組)(介詞詞組)

c．DietarySupplementandBodyImageinFemaleCollegeStudents

(名詞詞組)(名詞詞組)(介詞詞組)

d．KnowledgeofCardiovascularDiseaseinUniversityStudents

(名詞)(介詞詞組)(介詞詞組)

e．DiversityintheFutureWorkForce

(名詞)(介詞詞組)

f．ProgressonFuelCellandItsMaterials

(名詞)(介詞詞組)

g．DampingCapacityofShapeMemoryAlloy

(名詞詞組)(介詞詞組)

h．AcousticsofLongSpaces：TheoryandApplication

(名詞)(介詞詞組)(名詞詞組)

i.InvestigationofAirBagsDeploymentForces

(名詞)(介詞詞組)

onOut-of-PositionOccupant

(介詞詞組)

j.ModelsofsustainingHumanandNaturalDevelopment

(名詞)(介詞詞組)inanUrbanEnvironment

(介詞詞組)

標(biāo)題中的介詞詞組一般用來修飾名詞或名詞詞組，從而限定某研究課題的范圍。這種結(jié)構(gòu)與中文的“的”字結(jié)構(gòu)相似，區(qū)別是中文標(biāo)題中修飾語在前，中心詞在后。英文正好相反，名詞在前，而作為修飾語的介詞短語在后。

例5

a．ProgressonFuelCellandltsMaterials

燃料電池及其材料進(jìn)展

b．ComputerSimulationandExperimentalStudyOnCo1dShutDuringMoldFilling

鑄件充型中冷隔過程計算機(jī)模擬及其實驗研究

c.OntheFatigueLifePredictionofSpotWeldedComponents

點焊汽車構(gòu)件疲勞壽命預(yù)測

c．InvestigationofAirBagsDeploymentForcesonOut-Of-PositionOccupant

安全氣囊對離位乘員作用力的分析與研究

(4)其他形式

對于值得爭議的問題，偶爾可用疑問句作為論文的標(biāo)題，以點明整個論文討論的焦點。

例6

a．DoElectromagneticFieldsAffecttheWayPlantsGrow?

b．DoSpecificAmbientOdorsEnhanceShortTermMemoryFunction?

c．130HeterotrophicProtozoaReleaseMajorQuantitiesOfDissolvedOrganicPhosphorousinLakeWater?

有的標(biāo)題由兩部分組成，用冒號(：)隔開。一般來說，冒號前面一部分是研究的對象、內(nèi)容或課題，比較籠統(tǒng)，冒號后面具體說明研究重點或研究方法。這種結(jié)構(gòu)可再分為三種模式。

模式1研究課題：具體內(nèi)容

例7

a．MicroelectronicAssemblyandPackagingTechnology：BarriersandNeeds

b．FireResistantSteelsforConstruction：Design，PropertiesandMicrochemistry

c．AcousticsofLongSpacesTheoryandApplication

d．ImpactofCancer：CopingProcessandQualityofLife

模式2研究課題：方法/性質(zhì)

例8

a．SolidOxideFuelCell：ASurvey

b.AbsorbableImplantsinFingerFractures.ABiomechanicalandComparativeStudy

c.TheUseofTechnologyinHigherEducationPrograms:aNationalSurvey

d.DevelopmentofNewPublicWaterSupplyWell-fieldsUsingElectromagneticConductance:TwoCaseStudies

模式3研究課題：問題焦點

a.Aluminum:IsItHazardoustoYourHealth?

b.Noise:Good?Bad?MaybeBoth?

c.Manure:FriendorFoe?

思考題

下面這寫論文標(biāo)題是否合適？如果不合適，請修改。

1.AuditoryPerspectivesofDifferentTypesofMusic

2.ElectromagneticFieldsHaveHarmfulEffectsonHumans

3.HowtoUseWaterResourcesforIrrigationinSemiaridLand

4.WaterQualityCanBeProtectedThroughtheSuccessfulIntegrationofResearchandEducation

5.TheSingleCommunityConcept:AModelforAdultEnvironmentalEducation

6.PhysicsandArt:ConceptualLinkagesCanBeUncovered

7.DiamondIsUsedforElectronicDevices

8.YellowFever'sEffectonTransportationandCommerce

9.TheNatureofStudentScienceProjectIsComparedwithEducationalGoalsforScience

10.AQualitative/QuantitativeAnalysisoftheAdministrativeManagementInstituteatCornellUniversity

11.TheAmericansWithDisabilityActandItsApplicability

totheMentallyIll,HumanImmune-DeficiencyVirusandAcquiredImmuneDeficiencySyndromePopulations:AStatisticalAnalysis

參考答案

下面這寫論文標(biāo)題是否合適？如果不合適，請修改。

1.AuditoryPerspectivesofDifferentTypesofMusic(合適)

2.ElectromagneticFieldsHaveHarmfulEffectsonHumans(不合適）

改為：HarmfulEffectsofElectromagneticFieldsonHumans

3.HowtoUseWaterResourcesforIrrigationinSemiaridLand（不合適)

改為：UsingWaterResourcesforIrrigationinSemiaridLand

4.WaterQualityCanBeProtectedThroughtheSuccessfulIntegrationofResearchandEducation(不合適)

改為：ProtectingWaterQualityThroughtheSuccessfulIntegrationofResearchandEducation

5.TheSingleCommunityConcept:AModelforAdultEnvironmentalEducation(合適)

6.PhysicsandArt:ConceptualLinkagesCanBeUncovered（不合適）

改為：PhysicsandArt:UncoveringConceptualLinkages

7.DiamondIsUsedforElectronicDevices(不合適)

改為：UseofDiamondforElectricDevices

8.YellowFever'sEffectonTransportationandCommerce(合適）

9.TheNatureofStudentScienceProjectIsComparedwithEducationalGoalsforScience(不合適)

改為：TheNatureofStudentScienceProjectsinComparisontoEducationalGoalsforScience

10.AQualitative/QuantitativeanalysisoftheAdministrativeManagementInstituteatComellUniversity(合適)

11.TheAmericansWithDisabilityActandItsApplicabilitytotheMentallyIll,HumanImmune-DeficiencyVirusandAcquiredImmuneDeficiencySyndromePopulations:AStatisticalAnalysis(不合適)

改為：TheAmericansWithDisabilityActandItsApplicabilitytotheMentallyIll,HumanImmune-DeficiencyVirusandAIDSPopulations:AStatisticalAnalysis

英文技術(shù)論文寫作要領(lǐng)及常犯文法錯誤范例

作者：林正平

一、為何要用英文寫科技論文？

1.英文科技論文是國際通用語言。

2.英文文法結(jié)構(gòu)嚴(yán)謹(jǐn)，可以寫出條理清晰、文字簡潔的科技論文。

二、一般人常有的疑問和常犯的毛病

1.該用現(xiàn)在式還是過去式？

a、講解實驗結(jié)果和數(shù)據(jù)和表達(dá)自己想法時用現(xiàn)在式，好比與讀者對談，可使文章更為生動。

b、說明有關(guān)實驗的過程和動作時須用過去式。

c、闡述理論時用現(xiàn)在式，因為你必須相信那些理論是真理，不會過時的。

2.每一章節(jié)的第一句必須寫下最重要的觀點或結(jié)論，皆下來的句子都是根據(jù)它

來做邏輯辯證，這與一般文章的寫法大為不同。邏輯辯證一定要夠嚴(yán)謹(jǐn)，不可有跳躍性的思考，否則會減低了文章的可信度和說服力。

3.實驗數(shù)據(jù)太多，文字太少也是一般人常犯的毛病。其實作者應(yīng)該很清楚自己要表達(dá)的論點和別人可能有的反駁意見，所附上的數(shù)據(jù)和圖表數(shù)量只要足夠支持自己的論點即可，倒不用為了完整性全部都附上。

4.一般人寫英文科技論文常有很多贅詞，有時多出很多句子和段落都是在重復(fù)前面已提過的事情。反復(fù)檢查刪去贅詞贅句可以讓文章更為簡潔。

5.文章可讀性的重要不亞于作者要表達(dá)的內(nèi)容，作者常常忽略了大多數(shù)來自別的領(lǐng)域的讀者。增加可讀性的要領(lǐng)是：a.交代背景；b.深入淺出；c.少用小區(qū)域流傳的專有名詞；d.討論原理和機(jī)制時回歸基礎(chǔ)科學(xué)的說法。

6.既然寫英文科技論文這么困難，為什么還要寫呢？

A．身為半導(dǎo)體公司的工程師，這是我們的專業(yè)，就像音樂演奏家為了上臺演奏，須經(jīng)過百般磨練是一樣的道理。

B.我們一定要堅持一個信念，那就是好的實驗結(jié)果或觀點一定要發(fā)表出來和別人分享，唯有經(jīng)過所有人的檢驗才能顯示出其價值。這也是科學(xué)的根本精神。

7.技術(shù)論文在描述實驗步驟與結(jié)果時為了強(qiáng)調(diào)其客觀性常使用被動語態(tài)，盡量不用“We”,“Theauthors”或“I”作主詞。

三、冠詞范例

1.Self-alignedsilicideprocesshasbeendeveloped.→Aself-alignedsilicideprocesshasbeendeveloped….（我們常常忘記”不定冠詞”）

2.InthescalingdownofMetal-Oxide-Semiconductor(MOS)devicestosubmicrondimensions,→Inscalingdown…（我們常常亂加“定冠詞”）

3.一個句子中有“F-enhancedBpenetration”，“B-Oxygencompoundformation”，“Bdistribution”或“pointdefectgeneration”時前面不須加“a”或“the”，但以下寫法必須加“the”例如“thegenerationofpointdefects”

4.TheslightenhancementofBpenetrationduetotheTiSi2formationwasalsoobserved.→AslightenhancementofBpenetrationduetotheTiSi2formationwasalsoobserved.

5.Ascanbeseen,thesiliconridgesappearonbothsurfaces.→…..,siliconridgesappear….

6.TheSITOXTiSi2haslargergrainsizethantheconventionalTiSi2.→SITOXTiSi2hasalargergrainsizethanconventionalTiSi2.

7.Fig.10showsthetypicalcurrent-voltagebehaviorsofthediodes.→….Showtypicalcurrent-voltagecharacteristicsofthediode.

8.AfterRCAclean→afteranRCAclean

9.inanN2ambient→inaN2ambient

10.TheeffectofSimicrostructuresonthethermalstability…→TheeffectoftheSimicrostructureonthermalstability

11.Intherecentyears→inrecentyears

12.ThemainpurposeofthisprocessistoavoidtheimplantdamageintheSisubstrate.→..istoavoidimplantdamageintheSisubstrate.

13.Finally,thestandardAlmetallizationprocesswasusedonallthewafers.→Finally,astandardAlmetallizationprocesswasusedforallthewafers.

14.Theconcentration-dependentdiffusivityofBinsinglecrystalSiwasobtainedbytheBoltzmann-Matanoanalysis.→……obtainedbyBoltzmann-Matanoanalysis.

15.TheeffectivediffusivityofBinpolysiliconwasobtainedassumingerrorfunctiondistributionandconstantdiffusivity.→…..assuminganerrorfunctiondistributionandconstantdiffusivity

16.Thedepletionwidthisproportionaltosquarerootofthevoltageacrossthejunction→…thesquarerootofthevoltage…….

四、介系詞范例

1.如果提到時間的先后，“priorto”isbetterthan“before”

2.Theactivationenergyofdiffusioncurrentisabouttwotimeshigherthanthatofrecombinationcurrent.→Theactivationenergyforadiffusioncurrentisabouttwicethatforarecombinationcurrent.

3.Inallofthefigures→Inallthefigures

4.FurtherstudyontheSITOXprocess→AdetailedstudyoftheSITOXprocess

5.→ManyresearchgroupshaveconductedfundamentalstudiesonsilicideformationintheTi-SiO2-Sisystem.

6.TheTifilmwasdepositedwithadepositionrateofabout0.2nm/min.→atadepositionrateof…..

7.Oneofthereasonsofitslowerandmoreuniformleakage→oneofthereasonsfor…..

8.Thetypicalactivationenergy(0.5Eg)ofShockley-Reak-Hallgenerationcurrent→..for….

9.TheauthoralsowouldliketothankDrMattTheyerforhishelponSEManalysis→helpwithSEManalysis.

10.80nmTideposition→80nmofTideposition

11.ChannelingtailsontheBimplantprofileresultindeeperjunction.→intheBimplantprofile…

12.SIMSanalysesshowthatwitha20keV,2x1016cm-2BF2implantandan900C60sdopantdrive-outanneal,chemicalBconcentrationatthe….interface……

→SIMSanalysesshowthatfora20keV,….,thechemicalBconcentrationatthe…interface.

13.…,followedbya300nmpolysiliconoramorphousSideposition.→….,followedby300nmofpolysiliconoramorphoussilicondeposition.

14.200nmpolysilicon→200nmofpolysilicon

15.SincetheenergyforBF2implantwaschosensuchthatmostoftheBatomswereconfinedwithintheCoSi2layer→SincetheenergyoftheBF2implantwaschosensuchthattheBprofilewasconfinedtotheCoSi2layer.

16.Title:ReliabilityStudyofPPolysiliconGatePMOSFETsFabricatedbyusingBF2-implantedCosi2AsaBDiffusionSourceforPolysiliconGateDopingandshallowSource/DrainJunction.→….FabricatedusingBF2-implantedCosi2AsBDiffusionSource….

17.C-Vmeasurementsonthetestcapacitorsshowthattheas-depositedamorphousSigateisdegeneratelydopedwiththe950C,60sdrive-outanneal.→….C-Vmeasurementsonthetestcapacitorshowthattheas-depositedamorphousSigatesaredegeneratelydopedaftera950C…

18.Thegrainsizeofa70nmSITOXTiSi2filmisestimatedtobeabout10umwidewhilethatofa100nmconventionalTiSi2filmisabout3umwide.→Thegrainsizeina70nmSITOXTiSi2film…..in…..

19.ItwasfoundthatSITOXdeviceshadanaverageforwardcurrentabout50mA,whichiscomparablewiththatofconventionaldevices.→…h(huán)adanaverageforwardcurrentofabout50mA,whichiscomparabletothatofconventionaldevices.

20.Thisisaresultofthecompetitionofdifferentepitaxialorientations.→…thecompetitionbetweendifferentepitaxialorientations

五、連接詞范例

1.Furthermore,fromFigure3,allthecurrent-voltagecurvesforsilicidedsamplesexhibitsimilarfunctionalbehaviorincludingthejunctionwithonly20nmdepositedtitaniumwhileitisunlikelythatthesilicidewouldpenetratethejunctioninthiscase.→Furthermore,fromFigure3,allthecurrent-voltagecurvesforsilicidedsamplesexhibitsimilarfunctionalbehaviorincludingthejunctionwithonly20nmdepositedtitanium,forwhichcase,itisunlikelythatthesilicidewouldpenetratethejunction.

2.Therefore,…=So,…=Hence,…

3.…Onlythatitisverydifficulttodeterminewhichtypeofpointdefect(vacancyorinterstitial)isgeneratedinthiscase.→However,itisverydifficulttodetermineconclusivelyfromthisresultwhichtypeofpointdefect(vacancyorinterstitial)isgenerated.

4.ThedatashowsthattheleakagecurrentsscalewithperimetersinsteadofareasfortheSITOXandconventionaldiodes.→…scalewithperimeterratherthanareaforbothSITOXandconventionaldiodes.

5.Thus,theeffectsofCoindiffusiononthereliabilityofpMOSFETs…→Thus,theeffectsofCoindiffusion,ifany,onthe…

6.Todate,onlyitsdependenceonthethicknessofinterfacialSiO2hasbeenstudied.→Previously,

7.Besides,→Inaddition,

六、標(biāo)點符號范例

1.TheeffectofCoindiffusionalongwithBdiffusionduringthedopantdrive-outannealonthegateoxideintegrityisdiscussedindetail.→TheeffectofCoindiffusion,alongwithBdiffusion,..

2.Foritemizedsentencesorphrases,usesemicolon,e.g.Threesteps:(a);(b);(c).

3.Thereversebiasleakagecurrentiswellknowntohavetwocomponent,i.e.,diffusionandSRHgenerationcurrent.→twocomponent:diffusionandSRHgenerationcurrents.

4.onn-type<100>SiSubstrate→onn-type(100)Sisubstrate

七、語態(tài)范例

1.SiliconanddepositedTireactedinanAr/N2ambient→SiliconanddepositedTiwerereactedinanAr/N2ambient

2.Althoughsiliconisknowntobethedominantdiffuserduringtheformationoftitaniumsilicided,someinterdiffusionstilloccursbetweenSiandTi.→……..hasbeenshowntooccurbetween..

3.Sincebothgateandsubstratearep-type,carrierswillbeaccumulatedinsubstratewhiledepletednearthepolysilicon/SiO2interfacewithnegativegatebias.→…..,holeswillbeaccumulatedinthesubstratewhilebeingdepletednearthepolysilicon/SiO2interfacefornegativegatebias.

八、時式范例

1.Theidealityfactorsofforwardcurrentshavebeencalculatedtobeabout1.1forbothsilicidedandnon-silicidedjunctions.→….wasfoundtobeabout1.1forboth……

2.AlthoughsiliconwasshowntobethedominantdiffuserduringTiSi2formation……→……..hasbeenshown……

4.FromSIMSanalysis,itwasfoundthatBpenetrationeffectwasenhancedbyTiSi2formation.→…..,itisfoundthat……isenhancedbyTiSi2formation.

5.Inthiswork,…..isinvestigated.→Inthiswork,….wasinvestigated.

6.Inthiswork,SIMSanalysesarealsoperformed.→…werealsoperformed.

7.→Inthisstudies,dopantdrive-outcapability,thermalstabilityandinterfaceroughnessoftheSITOXTiSi2filmarecomparedwiththosefortheconventionalTiSi2process.

8.ThedatashowthatBdiffusivityinsinglecrystalSiismorethanoneorderofmagnitudehigherthanthepublisheddatawhereagasphasediffusionsourcewasused.→…whereagasphasediffusionsourceisused.

九、名詞范例

1.Theanomalousbehaviorsofforwardandreversebiascurrentversusappliedvoltageintitaniumsilicidedsourcedrainjunctionhavebeenstudied.→……behavior……h(huán)as…..

2.Thestressconditionswerechosentobeeitherpeakgatecurrentorpeaksubstratecurrentforvariousdrainbiasesfrom–7Vto–9V.→Thestressconditionwaschosentocorrespondtoeitherpeakgatecurrentorpeaksubstratecurrentconditionsfor

3.twoevidences→twopiecesofevidence

4.ThekindofdopantintheSisubstrate→thetypeofdopant……

5.Deepleveltrapsneartheperimeterregionmightbethemajorcauseoftheleakagecurrent.→mightbethemajorsourceof….

6.…..arediscussedindetails.→….arediscussedindetail.

7.Thesheetresistanceofasilicidelayerisagoodindicationofthedegreeofitsthermaldegradation.→agoodindicationoftheextentofitsthermaldegradation.

8.While…..,mostefforttodatehasbeendevotedto….→mosteffortstodatehavebeen….

9.Thehistogramofleakagecurrent→thehistogramofleakagecurrents

十、助動詞范例

1.However,titaniumatomsstillcanmoveintothesiliconsubstratethroughdiffusiveprocess,→……..atomscanstillmoveinto……..diffusiveprocess

2.…..alsocan…..→…canalso…..

3.Thiscouldbealsoduetothe…→Thiscouldalsobedueto….

十一、副詞范例

1.easily→readily（偶偶也要變化一下寫法）

2.probably≠possibly(probably比possible更肯定一些)

十二、動詞范例

1.Thegenerationcurrentinducedbythetraps…→…createdby…

2.FprohibitsthecompoundformationbetweenBandOxygen,thusmoreboronatomscandiffuserapidlythroughthegateoxide→FinhibitscompoundformationbetweenBandoxygenintheoxide.Thus,moreBatomsarefreetodiffuserapidlythroughtheoxide.

3.使用“pushed”作為“push”的過去式

4.ThesurfacedopantconcentrationswereevaluatedbySUPREMIIItobeabout5x1019cm-3→wereestimatedtobe…..

5.Moreworkneedtobedonetoelucidatethedetailedmechanism.→moreworkneedstobedone…

6.TheelectricaldataforcapacitorswithasdepositedpolysilicongatesarecomplicatedbytheCoindiffusionduringthedopantdrive-outanneal.

7.Lowionbeamenergyof5keVandanimpactangleof60wereusedtoavoidprofilebroadeningeffects.→AlowCsionbeamenergyof5keVandanimpactangleof60wasused……

8.AwiderangeofenergylevelsassociatedwiththeTitrapshavebeenreported.→AwiderangeofenergylevelsassociatedwithTitrapshasbeenreported.

十三、形容詞范例

1.Use“mono-crystallinesilicon”or“singlecrystalsilicon”butnot“singlecrystallinesilicon”

2.TheSITOXTiSi2filmismorethermallystablethantheconventionalTiSi2film→TheSITOXTiSi2filmisthermallymorestable…….

3.ExtensivematerialanalysesincludingXRD,SIMS,TEMwerealsoperformed.→Extensivematerialsanalysesincluding……

4.Fig.9showsthehighfrequencycapacitanceversusappliedbiasasafunctionofdopantdrive-outannealingtimeforthetestcapacitor.→…dopantdrive-outannealtime……

5.100nmCoSi2layer→100nmthickCoSi2layer

6.Afterthesilicidationprocess,theOconcentrationattheTiSi2/SiinterfaceisapproximatelytwoordershigherfortheSITOXprocessthanfortheconventionalsilicidationprocess.→…twoordersofmagnitudehigherthan…..

7.InaconventionalTiSi2silicidationprocess,SisubstratesareusuallysubjectedtoashortHFdipforremovingthenativeSiO2beforeTideposition.→Ina….,SisubstratesareusuallysubjectedtoabriefHFdipforremovingthenativeSiO2priortoTideposition.

8.TheformationofSITOXTiSi2involvedthreestepssameasthosefortheconventionalTiSi2formation.→…involvedthesamethreestepsasforconventionalTiSi2formation

9.ThedataindicatethatthethickertheTilayer,themoreeasilytheinterfacialSiO2canbeconsumed.→ThedataindicatethatthethickertheTilayer,themoreeasilyistheinterfacialSiO2consumed.

10.Plane-viewTEManalysis→planviewTEManalysis

11.FordepositedTithicknessmorethan60nm,→FordepositedTithicknessgreaterthan60nm,

12.FordepositedTithicknesslessthan40nm,.→FordepositedTithicknesssmallerthan40nm,

十四、其它語法范例

1.有一些語法無關(guān)文法，而是約定成俗的慣例，甚至是一種流行。

2.InthebulkofTiSi2,theO2concentration….→InthebulkoftheTiSi2film,…

3.reverse-biasedvoltage→reversebiasvoltage

4.Theactivationenergyextractedfromtemperatureeffectoftheleakagecurrentalsodecreaseswithincreasingbiasvoltage→Theactivationenergyofleakagecurrentextractedfromthetemperaturedependenceofthecurrentdecreases…….

5.Electricalcharacterizationoftheleakagecurrentinp/njunction(1300A)→…….p/njunctions(xj=130nm)

6.ArevisedmechanismincorporatingFrenkel-Poolebarrierlowering→AnewmechanisminvolvingFrenkel-Poole………

7.isstillnotclear→isyetnotclear

8.Titaniumfilmofvariousthicknessfrom200Ato800Awasused→Titaniumfilmsofvariousthicknessesbetween20nmand80nmwereused

9.Whentalkingaboutchangesoftemperature,peopleusedeg.Cinsteadof℃.

10.Figure3plotsthetemperatureeffectonleakagecurrentofjunctionswith800Atitaniumatdifferentappliedvoltages.→Figure3showsthetemperaturedependenceofleakagecurrentforjunctions…….

11.Thegenerationcurrentissohighthatthediffusioncurrentbecomenegligible.→Thegenerationcurrentissohighthatitdominatesthediffusioncurrent.

12.TheactivationenergyextractedfromFig.3versussquarerootofelectricfieldareplottedinFig.4→InFig.4,theactivationenergyextractedfromtheArrheniusplotinFig.3isplottedversusthesquarerootofelectricfieldinthep/njunction.

13.Theimpactoftitaniumsilicideondeviceperformanceisofgreatinterestinrecentyears.→Theimpactoftitaniumsilicideondeviceperformancehasbecomeanareaofgreatinterestinrecentyears.

14.Followingastandardcleaningprocedure,thesiliconwafers(1-10Ω-cm,ntype<100>)wereimplanted…→…n-type(100)siliconwafers(1-10Ω-cm)wereimplanted…

15.Thisisbecausethatthesource/drainregioncanbeconsideredasacombinedstructureofaTiSi2layerandapsiliconlayerinparallel.→…canbeconsideredasaparallelstructureofaTiSi2layerandapsiliconlayer.

16.Thedatashowsthatcurrentdensitiesarealmostconstantasperimeterincreases→…currentdensitiesareindependentofperimeter.→ThereisatradeoffbetweentheTiSi2sheetresistanceandthejunctionleakagecurrentwhenchoosingthetitaniumthickness.

17.HowdoesthestructurechangeaffectthemechanicalpropertiesofaTiSi2filmisstillunknown.→Howthestructurechangeaffectsthe…….

18.TheDISADSprocessisveryattractivefordualgateCMOSdevicesforsilicidedshallowsource/drainjunctionformationwhilesavingtwomasklevelsforoppositetypepolysilicondoping.→TheDISADSprocessisveryattractiveforthedual-gateCMOStechnologyandparticularlyforsilicidedshallowsource/drainjunctionformation,sinceitreduceprocesscomplexities(byeliminatingtwomasklevelsforn-typeandp-typepolysilicondoping).

19.A200nmpolysilicon(amorphoussilicon)layerwasthendepositedonthesewafersat625C(550C).→A200nmpolysilicon