各種半導體LED濕法清洗機課件

各種半導體LED濕法清洗機

蘇州晶洲裝備科技施利君DFPE各種半導體LED濕法清洗機

蘇州晶洲裝備科技施利君DFPEBatchtype:ConventionaltypeCassettetypeCassettelesstypeSinglebathtypeSinglewafertype:ScrubberSEZWetbenchtypeBatchtype:WetbenchtypeWetbenchbathconfigurationSC1DIHFDISC2DIDIDRYPreFurnaceCleanSC1:StandardClean1SC2:StandardClean2HF:HydrofluoricAcidDI:DeIonizedWaterLotFlowWetbenchbathconfigurationSCTypicalWetCleanBathPHeatExchangerfilterpumpProcessbathMeasurementtankTypicalWetCleanBathPHeatEParticlepatterndefectMetalcontaminationJunctionleakOrganiccontaminationgateoxideleakNativeoxidegateoxideleakMicroRoughnesssgateoxideleakThecontaminationandItsinfluence(沾污及其影響）ParticleSC:standardclean,RCA:Acompanyname,DIW:deionizedwaterSC-1(RCA1/APM:NH4OH:H2O2:DIW),SC-2(RCA2/HPM:HCl:H2O2:DIW),CARO(SPM/Piranha:H2SO4:H2O2)H3PO4(H3PO4:DIW)BOE(BufferoxideetchHF:NH4F)withsurfactant（表面活性劑）DHF(DiluteHF)DrySystem(SpinDry/IPAVaporDry/MarangoniDry)KeywordSC:standardclean,RCA:AcomSC1(MS)lightorganic&particleremoveDHFRemovechemicaloxideornativeOXSC2 RemovalofmetalsimpuritiesBOE:RemoveoxidewithPRHF/HNO3Removepolyfilm.SPM(H2SO4:H2O2)PhotoresistandmetalsionsH3PO4Nitrideremove49%HFremovenitrideandthickoxideChemicalapplicationSC1(MS)lightorganic&pSC1SC1TypicalRatio:NH4OH:H2O2:DI=1:1:5-1:2:50Temp:40–80CMechanism:Solutionoxidizesurfaceorganicsanddissolvessolublecomplexesformed.PHishighLowstabilityofmetalimpuritiesNH4OHDissolvesSiO2andetchesSiH2O2Oxidizer,formslayerofchemicaloxide Depositionofsomespeciesofmetalsonoxide(e.g.Fe,Ca)TypicalRatio:NH4OH:H2O2:各種半導體LED濕法清洗機課件RelationshipofZetaPotentialsandpHValueRelationshipofZetaPotentialSC2SC2Typicalratio:Hcl:H2O2:DI=1:1:5–1:1:50Temp:Typical80cPurpose:RemovemetallicimpuritiesfromwafersMechanism（機制）:LowPHimprovessolubilityofmetallicimpurities（低的PH值可以提高金屬雜質(zhì)的溶解度）Metallicchloridesformed(MetalslikeFe,Cacanberemoved)（形成金屬氯化物）H2O2formschemicaloxide(AffectOxidequality)Typicalratio:Hcl:H2O2:DI=HFRatio:100:1-10:1Temp:Typical23–25CPurpose:Silicondioxideremoval

Nitrideremoval(Rare)38%HFSiO2+6HFSiF6+2H2O+H2Hydrophobic（疏水）surfaceproduced

(Particlesensitive)HFRatio:100:1-10:1SPM(Caro)SPM(Caro)MainReactiveCompound:H2S2O5Caro’sacidTypicalTemp:130CChemicalRatio:H2SO4:H2O2=4:1-6:1AfterdryashingandIMPpostclean,Photoresistremoveandlightorganicremoveforpre-cleanMainReactiveCompound:H2S2OSi3N4+H2O3SiO2+4NH3H3PO4為催化劑，H2O為主要反應(yīng)物TypicalChemicalused:HotH3PO4acidTemperature:150Cto165CMajoruse:StrippingofnitridemaskEtchcharacteristic:Isotropic（各向同性刻蝕）H3PO4H3PO4TypesofDryingMethods:–SpinDry–IPAVaporDry(HotIPA)–MarangoniDry(RoomTempIPA)–HotN2+IPAfumeDryPerformanceIndices:–DryingSpeed–Particlelevel–Watermark–MetalimpurityDrytechnologyTypesofDryingMethods:DryteMonitorTechniqueParticleCountLaserSurfaceScannerParticleinbathLiquidParticleCounterMetalContaminationTXRF(ICPMS)（全反射X熒光）Etchrate/uniformityEllipsometer（偏振光橢圓率測試儀）(OrganiccontaminationXPS（X光電子能譜儀）TOF-SIMS)MicroroughnessAFM（原子力顯微鏡）MonitorTechniqueParticleCounForwetbench,wenormallymonitorParticle,Etchrate(DHF,H3PO4)andTXRFitems.Particle1wafer/once/dayspec≦30pcs

(≧0.16μm)2.Etchrate1wafer/once/dayTXRF(TotalReflectionX-rayFluorescence)1wafer/once/weekusethesamewaferasparticletestwafer,afterparticletestMonitorfrequencyForwetbench,wenormallymoMonitorwafertype1.Particle:H3PO4bathuseoxidefilmwafer,othersusebarewafer.IfParticlecountmorethan100,needreclaim.2.Etchrate:a.DHF,BOEuseoxidefilmwafer(4500A),whenfilmthicknesslowerthan1000A,needreclaimb.H3PO4useNitridefilmwafer(1700A),onlycanuseonce,thenneedreclaim.Monitorwafertype1.PEtchRateDataEtchRateDataChuckWash/Rinse:Forchuck/robotcleanchemicalresidueOverFlow:NormallyafterHF/BHF/BOE(hot)QuickDumpRinse:cleanchemicalresidueonwaferFinalRinse:AddedResistsensor(水阻值計）,makesureresidueremovecompletelyDIWbath/tankChuckWash/Rinse:DIWbath/tankMSDS:

MaterialsafetydatasheetThroughput:

WPH(waferperhour)

Uniformity

：均勻性

Etchingrate:

蝕刻率(deltathickness/sec)Chemicallifetime:

化學液活期

General名詞解釋MSDS:General名詞解釋Chemicallifecount(batch):

化學液批數(shù)活期

Replenish(spiking)time:

補充時間

Circulationrate:

循環(huán)速率

Measuringtank:

測量槽

Megasoniccleaning:

超聲波清洗Inlineheater:

在線加熱器Chemicallifecount(batch):Heaterexchanger:

冷熱交換器Pump:

泵，提供循環(huán)動力Filter:

過濾器，吸附化學溶液中的雜質(zhì)Loader/unloader:

入貨/出貨裝置BG:backgrinding

晶圓背面研磨PR:photoresist光阻Heaterexchanger:WetbenchconfigurationWetbenchconfiguration

processrecipesampleProcessPPID:F040A60H30Detailrecipe:SPM(0)+HQDR(0)+0.5HF(40)+OF(480)+APM(600)+HCQDR(300)+HPM(300)+QDR(300)+FR(300)+M/Dprocessrecipes

1.ADWGC01Pregateclean2.ADWRA01RCAclean3.AEWPS01PRwetstrip4.ASWCP01