標(biāo)準(zhǔn)解讀

《GB/T 44924-2024 半導(dǎo)體集成電路 射頻發(fā)射器/接收器測(cè)試方法》是一項(xiàng)國家標(biāo)準(zhǔn)，旨在為半導(dǎo)體集成電路中的射頻發(fā)射器和接收器提供一套統(tǒng)一的測(cè)試方法。該標(biāo)準(zhǔn)涵蓋了從設(shè)備準(zhǔn)備到最終數(shù)據(jù)處理的全過程，確保了不同制造商之間產(chǎn)品性能評(píng)價(jià)的一致性和可比性。

在適用范圍上，此標(biāo)準(zhǔn)適用于所有類型的射頻發(fā)射器與接收器，包括但不限于移動(dòng)通信、無線局域網(wǎng)以及其他需要進(jìn)行射頻信號(hào)傳輸?shù)膽?yīng)用場(chǎng)合。它不僅限定了測(cè)試環(huán)境條件（如溫度、濕度），還詳細(xì)規(guī)定了測(cè)試所需的儀器精度要求及校準(zhǔn)程序，以保證測(cè)試結(jié)果的準(zhǔn)確可靠。

對(duì)于具體測(cè)試項(xiàng)目而言，《GB/T 44924-2024》包含了對(duì)輸出功率、頻率穩(wěn)定性、相位噪聲、調(diào)制特性等多個(gè)關(guān)鍵參數(shù)的測(cè)量指導(dǎo)。每個(gè)參數(shù)都有明確的定義說明，并給出了推薦使用的測(cè)試配置示例，幫助技術(shù)人員根據(jù)實(shí)際情況選擇合適的測(cè)試方案。

此外，該標(biāo)準(zhǔn)還強(qiáng)調(diào)了測(cè)試過程中需要注意的安全事項(xiàng)，比如防止靜電損壞器件、正確接地避免干擾等，這些都是保障測(cè)試順利進(jìn)行不可或缺的部分。


如需獲取更多詳盡信息，請(qǐng)直接參考下方經(jīng)官方授權(quán)發(fā)布的權(quán)威標(biāo)準(zhǔn)文檔。

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文檔簡(jiǎn)介

ICS31.200

CCSL56

中華人民共和國國家標(biāo)準(zhǔn)

GB/T44924—2024

半導(dǎo)體集成電路

射頻發(fā)射器/接收器測(cè)試方法

Semiconductorintegratedcircuits—

MeasuringmethodsforRFtransmitter/receiver

2024?12?31發(fā)布2025?04?01實(shí)施

國家市場(chǎng)監(jiān)督管理總局

國家標(biāo)準(zhǔn)化管理委員會(huì)發(fā)布

GB/T44924—2024

目次

前言··························································································································Ⅲ

1范圍·······················································································································1

2規(guī)范性引用文件········································································································1

3術(shù)語和定義··············································································································1

4一般要求·················································································································4

4.1總則·················································································································4

4.2環(huán)境要求···········································································································4

4.3測(cè)試條件···········································································································4

4.4測(cè)試系統(tǒng)及儀器設(shè)備····························································································4

4.5測(cè)試注意事項(xiàng)·····································································································5

5詳細(xì)要求·················································································································5

5.1mW5

動(dòng)態(tài)功耗P（a）································································································

5.2dB6

功率增益G（P）·································································································

5.3ΔdB10

功率增益平坦度G（P）····················································································

5.4dB11

線性功率增益GPLIN（）·······················································································

5.5ΔdB11

線性功率增益平坦度GPLIN（）···········································································

5.6dBm12

輸出功率P（o）·····························································································

5.7dBm13

抗燒毀功率PKSH（）························································································

5.8效率η（%）········································································································14

5.9功率增益可調(diào)范圍GR（dB）··················································································15

5.10dBc16

鏡像抑制比RIMJ（）························································································

5.11dBc17

諧波抑制比RHR（）························································································

5.12dBc18

本振抑制比RLO（）························································································

5.13dBc19

邊帶抑制比RSB（）·························································································

5.14dB20

雜散抑制比RFS（）··························································································

5.15PNdBdBm21

_壓縮點(diǎn)CP?N（）··················································································

5.16輸出二階互調(diào)截止點(diǎn)OIP2（dBm）·········································································23

5.17輸入二階互調(diào)截止點(diǎn)IIP2（dBm）··········································································26

5.18輸出三階互調(diào)截止點(diǎn)OIP3（dBm）·········································································26

5.19輸入三階互調(diào)截止點(diǎn)IIP3（dBm）··········································································28

5.20ns29

通道建立時(shí)間tON（）·························································································

5.21ns30

通道關(guān)斷時(shí)間tOFF（）························································································

5.2231

收發(fā)切換時(shí)間tTR······························································································

Ⅰ

GB/T44924—2024

5.23噪聲系數(shù)NF（dB）·····························································································34

5.24端口回波損耗RL（dB）/電壓駐波比VSWR·····························································37

5.25端口阻抗Z（Ω）·································································································40

5.26ns41

群時(shí)延tGD（）··································································································

5.27帶內(nèi)相位非線性PNL（°）·····················································································42

5.28dBm/Hz43

噪聲基底NFL（）·····················································································

5.29本振泄漏LOL（dBm）························································································44

5.30?dB45

幅度穩(wěn)定度AP（o）·······················································································

5.31相位穩(wěn)定度Δθ（°）·····························································································46

5.32°47

通道間相位一致性PSER（）··················································································

5.33dB50

通道間幅度一致性AMER（）··············································································

5.34I/Q°51

相位誤差PEIQ（）························································································

5.35I/QdB53

幅度誤差A(yù)EIQ（）·····················································································

5.36調(diào)制精度EVM（%）···························································································54

5.37鄰信道功率抑制比ACPR（dB）·············································································55

5.38dB56

通道隔離度KISO（）·························································································

5.39載波泄露CL（dB）·····························································································58

Ⅱ

GB/T44924—2024

前言

本文件按照GB/T1.1—2020《標(biāo)準(zhǔn)化工作導(dǎo)則第1部分：標(biāo)準(zhǔn)化文件的結(jié)構(gòu)和起草規(guī)則》的規(guī)

定起草。

請(qǐng)注意本文件的某些內(nèi)容可能涉及專利。本文件的發(fā)布機(jī)構(gòu)不承擔(dān)識(shí)別專利的責(zé)任。

本文件由中華人民共和國工業(yè)和信息化部提出。

本文件由全國集成電路標(biāo)準(zhǔn)化技術(shù)委員會(huì)（SAC/TC599）歸口。

本文件起草單位：中國電子科技集團(tuán)公司第二十四研究所、重慶西南集成電路設(shè)計(jì)有限責(zé)任公司、

中國電子科技集團(tuán)公司第十四研究所、中國電子科技集團(tuán)公司第三十八研究所、成都振芯科技股份有

限公司、深圳市晶峰晶體科技有限公司。

本文件主要起草人：蘇良勇、王露、唐景磊、陽潤、戚園、劉丹、許娟、蘇巧、陳翔、劉曉政、范超、高青。

Ⅲ

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