ID2006電動車電機驅動芯片-國產(chǎn)單相半橋驅動芯片-驪微電子

1、ChipownID2006High-Side & Low-Side Gate Drive IC深圳市驪微電子科技有限公司芯朋微（安趨）代理商General descriptionThe ID2006 is a high voltage, high speed power MOSFET driver with independent high and low side referenced output channels based on P_SUB P_EPI process. The floating channel can be used to drive an N-channel pow

2、er MOSFET in the high side configuration which operates up to 200 V. Logic inputs are compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction.Applicationl Small and medium- power moto

3、r driverl Power MOSFETS driverl HalfBridge Power Convertersl Full-Bridge Power Convertersl Any Complementary Drive ConvertersFeaturesl Fully operational to+200 Vl 3.3V and 5V input logic compatiblel dV/dt Immunity 50 V/nsecl Gate drive supply range from 6 V to 18 Vl Typically Source / Sink current c

4、apability 1 A/1 Al Typically -9V negative Vs bias capabilityVCCVBHINHOID2006LIN VSCOMLO18273645Package/Order InformationOrder codePackageID2006SEC-R1SOP8RBBSDCBSTypical Circuit345MCU1VDC, up to 200V21 VCCVB 815VQ3Q52 HINHOQ17ID2006M3LINVS 6Q2Q4Q64 COMLO 5IF U IF V IF W Rcs URcs VRcs WNote 1: RB valu

5、e suggest 10 ohms, ultra fast recovery or schottky diode should be used as BSDNote 2: CBS value according to PWM control conditionNote 3: Driver circuit should be adjust according to the MOSFETs be usedNote 4: Pull down resistor between Gate and Source of MOSFETs, 10k ohms is suggestedNote 5: Resist

6、ors between HIN/LIN and MCU, recommended value is 100 to 1k ohmsDynamic Electrical CharacteristicsVBIAS (VCC, VBS) = 15V, CL = 1000 pF and TA = 25C unless otherwise specified.SymbolDefinitionMINTYP.MAX.UnitstONHigh & low side turn on propagation delay-150250nstOFFHigh & low side turn off propagation

7、 delay-110250MTDelay matching time (tON, tOFF)-50DTDead time-300-tRTurn on rising time-60100tFTurn off falling time-60100Static Electrical CharacteristicsVBIAS (VCC, VBS) = 15V, CL = 1000 pF and TA = 25C unless otherwise specified.SymbolDefinitionMIN.TYP.MAX.UnitsILKHigh-side floating supply leakage

8、 current-50AIQBSQuiescent VBS supply current-70120IQCCQuiescent VCC supply current-200280UVCCTVCC supply under-voltage trigger voltage4.45.05.6VVUVCCHYVCC supply under-voltage hysteresis-0.3-UVBSTVBS supply under-voltage trigger voltage3.23.84.4VUVBSHYVBS supply under-voltage hysteresis-0.3-VOHHigh

9、level output voltage drop, VBIAS - VO-0.2VVOLLow level output voltage drop, VO-0.1IO+Output High short circuit pulsed current-1-AIO-Output low short circuit pulsed current-1-VIHHigh level input threshold voltage2.5-VVILLow level input threshold voltage-0.8IIN+Logic “1” input bias current (HIN “1” &

10、LIN “1”)-1020AIIN-Logic “0” input bias current (HIN “0” & LIN “0”)-1530Function Timing DiagramHINLINHOLOFig.1 Input and output timing waveformHIN/LIN50%5V50% 0Vton toff90%15VHO/LO10%0VtrtfFig.2 Propagation and Rise/Fall time definitionHIN/LIN50%50%5V0V15VLOHO10%0VMTMT90%15VLOHO0VFig.3 Delay matching

11、 definitionPackage InformationD hA3A2A0.25A1 L L1bb1E1 Ec1 cBASE METAL WITH PLATING SECTION B-B b e BBNote：Y：Year Code；WW：Week Code；XXXXX：Internal CodeSOP8 Package Outlines and DimensionsSizeSymbolMin.（mm）Typ.（mm）Max.（mm）SizeSymbolMin.（mm）Typ.（mm）Max.（mm）A-1.75D4.704.905.10A10.10-0.225E5.806.006.20A

12、21.301.401.50E13.703.904.10A30.600.650.70e1.27BSCb0.39-0.48h0.25-0.50b10.380.410.43L0.50-0.80c0.21-0.26L11.05BSCc10.190.200.210-8Top markPackageiDR. ID2006YWWXXXXXSOP8Notes:1. This drawing is subjected to change without notice.2. Body dimensions do not include mold flash or protrusion.Important Noti

13、ceWuxi Chipown Microelectronics Co. Ltd. reserves the right to make changes without further notice to any products or specifications herein. Wuxi Chipown Microelectronics Co. Ltd. does not assume any responsibility for use of any its products for any particular purpose, nor does Wuxi Chipown Microelectronics Co. Ltd assume any liabi