IRF630場(chǎng)效應(yīng)管

1、August1999 Rev1.100FEATURESTrenchtechnologyLowon-stateresistanceFastswitchingLowthermalresistanceSYMBOLQUICKREFERENCEDATAV=200VDSSI=9ADR400mQDS(ON)August1999 Rev1.100GENERALDESCRIPTIONN-channel,enhancementmodefield-effectpowertransistorusingTrenchtechnology,intendedforuseinoff-lineswitchedmodepowers

2、upplies,T.V.andcomputermonitorpowersupplies,d.c.tod.c.converters,motorcontrolcircuitsandgeneralpurposeswitchingapplications.TheIRF630issuppliedintheSOT78(TO220AB)conventionalleadedpackageTheIRF630SissuppliedintheSOT404(D2PAK)surfacemountingpackagePINNINGSOT78(TO220AB)SOT404(D2PAK)PINDESCRIPTION1gate

3、2draini3sourcetabdrainLIMITINGVALUESLimitingvaluesinaccordancewiththeAbsoluteMaximumSystem(IEC134)SYMBOLPARAMETERCONDITIONSMIN.MAX.UNITVDrain-sourcevoltageT=25Cto175C200VVDSSCCDDrain-gatevoltageTj=25Cto175C;R=20kQ200VVDGRGate-sourcevoltagejGS20VIGSContinuousdraincurrentTmb=25C;VGS=10V9ADTmb=100C;VGS

4、=10V6.3AIPulseddraincurrentTmb=25CGS36APDMTotalpowerdissipationTmb=25C88WTjD,TstgOperatingjunctionandmb-55175Cjstgstoragetemperature1Itisnotpossibletomakeconnectiontopin:2oftheSOT404packageAugust1999 Rev1.100August1999 Rev1.100AVALANCHEENERGYLIMITINGVALUESLimitingvaluesinaccordancewiththeAbsoluteMax

5、imumSystem(IEC134)SYMBOLPARAMETERCONDITIONSMIN.MAX.UNITEASeNnoenr-greypetitiveavalancheenergyUnclampedinductiveload,IAS=5A;t=380ys;TjpriortoavalanChe=25C;V25V;Rj=50Q;V=10V;refertoDDfig;14GSGSIPeaknon-repetitiveASavalanchecurrent250mJ9ATHERMALRESISTANCESSYMBOLPARAMETERCONDITIONSMIN.Rthj-mbRthj-aTherm

6、alresistancejunctiontomountingbaseThermalresistancejunctiontoambientSOT78package,infreeairSOT404package,pcbmounted,minimumfootprint-1.7K/W60-K/W50-K/WTYP.MAX.UNITELECTRICALCHARACTERISTICSTj=25CunlessotherwisespecifiedSYMBOLPARAMETERCONDITIONSTYP.MAX.UNITV(BR)DSSVGS(TO)Drain-sourcebreakdownvoltageGat

7、ethresholdvoltageRDS(ON)IgGfsSSIGSSDSSQQQgsgdddtfLLCCossDrain-sourceon-stateresistanceForwardtransconductanceGatesourceleakagecurrentZerogatevoltagedraincurrentTotalgatechargeGate-sourcechargeGate-drain(Miller)chargeTurn-ondelaytimeTurn-onrisetimeTurn-offdelaytimeTurn-offfalltimeInternaldraininducta

8、nceInternaldraininductanceInternalsourceinductanceInputcapacitanceOutputcapacitanceFeedbackcapacitanceV=0V;I=0.25mA;200-GSDT=-55Cj178-V=V;I=1mA234DSGSDTj=175C1-Tj=-55Cj6V=10V;I=5.4A300400GSDT=175Cj-1.12V=25V;ID=5.4A3.89-VDS=20VD;VDS=0V10100VGS=200V;VGDSS=0V0.0510VDS=160V;VGS=0V;T=175C-250DSGSjI=5.9A

9、;V=160V;V=10V-39DDDGS-6.3-21V=100V;RD=10Q;8VDD=10V;RD=5.6Q19RGeSsistiveloadG2515Measuredtabtocentreofdie3.5Measuredfromdrainleadtocentreofdie4.5MIN.Measuredfromsourceleadtosourcebondpad-7.5V=0V;V=25V;f=1MHz-959GSDS-93-54(SOT78packageonly)VVVVVmQQSnAyAyAnCnCnCnsnsnsnsnHnHnHpFpFpFAugust1999 Rev1.100RE

10、VERSEDIODELIMITINGVALUESANDCHARACTERISTICST=25CuniessotherwisespecifiedjSYMBOLPARAMETERCONDITIONSMIN.TYP.MAX.UNITISContinuoussourcecurrent(bodydiode)-9AISMPuisedsourcecurrent(bodydiode)36AVSDDiodeforwardvoitageI=F9A;V=0VGS-0.851.2VtReverserecoverytimeI=9A;-di/dt=100A/ps;-92-nsQrrReverserecoverycharg

11、eVF=-10VF;V=25V7D-0.5-pCrrGSRAugust1999 Rev1.100August1999 Rev1.100100908070、60、50、40、30、2010、NormalisedPowerDerating,PD(%)00255075100125150175MountingBasetemperature,Tmb(C)Fig.1.Normalisedpowerdissipation.PD%=100口化25CfmbFig.2.Normalisedcontinuousdraincurrent.ID%=1叫d25工=f(TJ；Vgs蘭10VFig.3.Safeoperati

12、ngareaL&L=f(VDS)；L前恥PUE；卩眥化怕PPulsewidth,tp(s)Fig.4.Transientthermalimpedanee.Z=f(t);parameterD=t/Tthj-mbp10DrainCurrenTi=25CMD4A)VGS=10V6z545V324.5V101.820.60.814Drain-SourceVoltage,VDS(V)Fig.5.Typicaloutputcharacteristics,T=25C.L=%Fig.6.Typicalon-stateresistanee,T=25C.RDS(ON)=嘰)August1999 Rev1.100A

13、ugust1999 Rev1.100Fig.7.Typicaltransfercharacteristics.0-60ThresholdVoltage,V，GS(TO)(V)-*j.J,maximj.J._7iumJJJ、typical、jSB1_-7.Jfminimf-.J一J4.543.532.521.510.5L=叫Vgsto-40-20020406080100120140160180JunctionTemperature,Tj(C)Fig.10Gatethresholdvoltage=f(T);conditions:I=1mA;V=VJDDSGS14Transconductance,i

14、gfs(S)13VDS:IDXRDS(ON)12Ti=2!iCr11109r-175C8-71-6543210012345678910Draincurrent,ID(A)1.0E-051.0E-061.0E-011.0E-021.0E-031.0E-04Fig11.Sub-thresholddraincurrent.L=叫匂；泅ditions：T=25CFig.8Typicaltransconductanee,T=25C.g=f(l)JJfsD，Junctiontemperature,Tj(C)Fig.9.Normaliseddrain-sourceon-stateresistanee.R/R

15、=f(T)DS(ON)DS(ON)25CjCapacitances,Ciss,Coss,Crss(pF)Fig.12.Typicalcapacitances,C,C,C,C=%)；conditions:化=0Vsf=和應(yīng)August1999 Rev1.100August1999 #Rev1.10010VGS:=0/r98i*76175Cr5iJTj=25C4ti.r13*f2jfr1JF產(chǎn)/Source-DrainDiodeCurrent,IF(A).00040.5060.70.80911112Source-DrainVoltage,VSDS(V)Fig.13.Typical

16、reversediodecurrent.I=f(V);conditions:V=0V;parameterTFSDSGSjMaximumAvalancheCurrent,I.(A)Fig.14.Maximumpermissiblenon-repetitiveavalanchecurrent(I)versusavalanchetime(t);unclampbdinductiveloadAVAugust1999 Rev1.100MECHANICALDATAAqJDLiQL2cL2(1)廠b1Plasticsingle-endedpackage;heatsinkmounted;1mountinghol

17、e;3-leadTO-220SOT78Q勺10mmFig.15.SOT78(TO220AB);pin2connectedtomountingbase(Netmass:2g)DIMENSUNITONS(mAmaretAliooriginbadimeb1nsions)cDDiEeLLiL2PqQmm4.51.391.270.90.7115.8110.39.712.5415.0113.513.302.79liiaX.3.0pl3.0272.622scaleJ.Terminalsinthiszqnearenottinned.nuuunuMQuaEUROPEANP

18、ROJECTIONISSUEDATEOUTLINEVERSIONIECJEDECEIAJSOT781CMTO-220日97-06-11NoteAugust1999 #Rev1.100NotesThisproductissuppliedinanti-staticpackaging.Thegate-sourceinputmustbeprotectedagainststaticdischargeduringtransportorhandling.RefertomountinginstructionsforSOT78(TO220AB)package.EpoxymeetsUL94V0at1/8.Augu

19、st1999 Rev1.100MECHANICALDATAAA1D1DHD013bcQSOT404Oiiii2I5iii5mmscaleFig.16.SOT404surfacemountingpackage.Centrepinconnectedtomountingbase.Plasticsingle-endedsurfacemountedpackage(PhilipsversionofD2-PAK);3leads(oneleadcropped)mountingbase人DIMENSIONS(Ilimare1AlIDoiigibialdimecnsions)DDiEeLpHdQUNITAmax.

20、p4.501.400.850.64111.6010.302542.9015.402.604.1010.6010.46111.2019.7012.10114.8012.201OUTLINEVERSIONEUROPEANPROJECTIONISSUEDATEREFERENCESSOT404IECJEDECEIAJ壬霸12-1406-25August1999 Rev1.100NotesThisproductissuppliedinanti-staticpackaging.Thegate-sourceinputmustbeprotectedagainststaticdischargeduringtra

21、nsportorhandling.RefertoSMDFootprintDesignandSolderingGuidelines,DataHandbookSC18.EpoxymeetsUL94V0at1/8.MOUNTINGINSTRUCTIONS9.02.03.8Dimensionsinmm11.517.5508Fig.17.SOT404:solderingpatternforsurfacemountingDEFINITIONSDatasheetstatusObjectivespecificationThisdatasheetcontainstargetorgoalspecification

22、sforproductdevelopment.PreliminaryspecificationThisdatasheetcontainspreliminarydata;supplementarydatamaybepublishedlater.ProductspecificationThisdatasheetcontainsfinalproductspecifications.LimitingvaluesLimitingvaluesaregiveninaccordancewiththeAbsoluteMaximumRatingSystem(IEC134).Stressaboveoneormore

23、ofthelimitingvaluesmaycausepermanentdamagetothedevice.ThesearestressratingsonlyandoperationofthedeviceattheseoratanyotherconditionsabovethosegivenintheCharacteristicssectionsofthisspecificationisnotimplied.Exposuretolimitingvaluesforextendedperiodsmayaffectdevicereliability.ApplicationinformationWhereapplicationinformationisgiven,itisadvisoryanddoesnotformpartofthespecification.PhilipsEle