NTMFD4901NFT3G;NTMFD4901NFT1G;中文規(guī)格書,Datasheet資料

NTMFD4901NF

DualN-ChannelPower

MOSFETwithIntegrated

Schottky

30V,HighSide18A/LowSide30A,Dual

N?ChannelSO8FL

V(BR)DSS

RDS(ON)

MAX

IDMAX

Features

?Co?PackagedPowerStageSolutiontoMinimizeBoardSpace

6.5mW@10V

10mW@4.5V

2.35mW@10V

3.5mW@4.5V

Q1TopFET

30V

18A

?LowSideMOSFETwithIntegratedSchottky

?MinimizedParasiticInductances

?OptimizedDevicestoReducePowerLosses

?TheseDevicesarePb?Free,HalogenFree/BFRFreeandareRoHS

Compliant

Q2Bottom

FET

30V

30A

D1

(2,3,4,9)

Applications

?DC?DCConverters

?SystemVoltageRails

?PointofLoad

(1)G1

S1/D2(10)

(8)G2

S2(5,6,7)

PINCONNECTIONS

D14

5S2

6S2

7S2

8G2

D13

D12

G11

9

D1

10

S1/D2

(BottomView)

MARKING

DIAGRAM

1

4901NF

AYWZZ

DFN8

CASE506BX

1

4901NF=SpecificDeviceCode

A

Y

=AssemblyLocation

=Year

W

ZZ

=WorkWeek

=LotTraceability

ORDERINGINFORMATION

Seedetailedorderingandshippinginformationinthepackage

dimensionssectiononpage5ofthisdatasheet.

1

PublicationOrderNumber:

NTMFD4901NF/D

?SemiconductorComponentsIndustries,LLC,2012

May,2012?Rev.3

/

NTMFD4901NF

MAXIMUMRATINGS(TJ=25°Cunlessotherwisestated)

Parameter

Symbol

Value

Unit

Drain?to?SourceVoltage

Q1

Q2

Q1

Q2

Q1

VDSS

30

V

Drain?to?SourceVoltage

Gate?to?SourceVoltage

VGS

±20

V

Gate?to?SourceVoltage

ContinuousDrainCurrentRqJA(Note1)

TA=25°C

TA=85°C

TA=25°C

TA=85°C

TA=25°C

ID

13.5

9.7

A

Q2

23.4

16.9

1.90

2.07

18.2

13.1

30.3

21.8

3.45

3.45

10.3

7.4

PowerDissipation

RqJA(Note1)

Q1

Q2

Q1

PD

W

ContinuousDrainCurrentRqJA≤10s(Note1)

TA=25°C

TA=85°C

TA=25°C

TA=85°C

TA=25°C

ID

A

Q2

Steady

State

PowerDissipation

RqJA≤10s(Note1)

Q1

Q2

Q1

PD

W

ContinuousDrainCurrent

TA=25°C

TA=85°C

TA=25°C

TA=85°C

TA=25°C

ID

R

qJA(Note2)

A

Q2

17.9

12.9

1.10

1.20

60

PowerDissipation

Q1

Q2

Q1

Q2

Q1

Q2

Q1

Q2

PD

W

A

R

qJA(Note2)

PulsedDrainCurrent

TA=25°C

tp=10ms

IDM

100

OperatingJunctionandStorageTemperature

SourceCurrent(BodyDiode)

DraintoSourceDV/DT

TJ,TSTG

?55to+150

°C

A

IS

3.4

4.9

6

dV/dt

EAS

EAS

TL

V/ns

mJ

SinglePulseDrain?to?SourceAvalancheEnergy(T=25C,VDD

24A

48A

Q1

Q2

28.8

115

260

J

=50V,VGS=10V,I=XXA,L=0.1mH,R=25W)

L

pk

G

LeadTemperatureforSolderingPurposes

(1/8”fromcasefor10s)

°C

StressesexceedingMaximumRatingsmaydamagethedevice.MaximumRatingsarestressratingsonly.Functionaloperationabovethe

RecommendedOperatingConditionsisnotimplied.ExtendedexposuretostressesabovetheRecommendedOperatingConditionsmayaffect

devicereliability.

1.Surface?mountedonFR4boardusing1sq?inpad,2ozCu.

2.Surface?mountedonFR4boardusingtheminimumrecommendedpadsizeof100mm2.

2

/

NTMFD4901NF

THERMALRESISTANCEMAXIMUMRATINGS

Parameter

FET

Q1

Q2

Q1

Q2

Q1

Q2

Symbol

Value

65.9

60.5

113.2

104

Unit

Junction?to?Ambient–SteadyState(Note3)

RqJA

Junction?to?Ambient–SteadyState(Note4)

Junction?to?Ambient–(t≤10s)(Note3)

RqJA

°C/W

RqJA

36.2

36.2

3.Surface?mountedonFR4boardusing1sq?inpad,2ozCu.

4.Surface?mountedonFR4boardusingtheminimumrecommendedpadsizeof100mm2.

ELECTRICALCHARACTERISTICS(TJ=25°Cunlessotherwisespecified)

Parameter

FET

Symbol

TestCondition

Min

Typ

Max

Unit

OFFCHARACTERISTICS

Drain?to?SourceBreak-

Q1

Q2

Q1

Q2

Q1

V(BR)DSS

VGS=0V,ID=250mA

VGS=0V,ID=1mA

30

30

V

downVoltage

Drain?to?SourceBreak-

downVoltageTemperature

Coefficient

V

18

15

mV/

°C

(BR)DSS

J

/T

ZeroGateVoltageDrain

Current

IDSS

VGS=0V,

DS=24V

TJ=25°C

1

mA

V

TJ=125°C

TJ=25°C

10

Q2

VGS=0V,

DS=24V

500

V

Gate?to?SourceLeakage

Q1

Q2

IGSS

VGS=0V,VDS=±20V

±100

nA

V

Current

±100

ONCHARACTERISTICS(Note5)

GateThresholdVoltage

Q1

VGS(TH)

VGS=VDS,ID=250mA

1.2

1.2

2.2

2.2

Q2

Q1

Q2

Q1

NegativeThresholdTemper-

atureCoefficient

V

/

4.5

4.0

5.2

8.0

1.9

2.8

28

mV/

°C

GS(TH)

T

J

Drain?to?SourceOnResist-

ance

RDS(on)

VGS=10V

VGS=4.5V

VGS=10V

VGS=4.5V

ID=10A

ID=10A

ID=20A

ID=20A

6.5

10

mW

Q2

2.35

3.5

ForwardTransconductance

Q1

Q2

gFS

VDS=1.5V,ID=10A

S

45

CHARGES,CAPACITANCES&GATERESISTANCE

Q1

1150

2950

360

1100

105

82

InputCapacitance

OutputCapacitance

ReverseCapacitance

CISS

COSS

CRSS

Q2

Q1

Q2

Q1

Q2

VGS=0V,f=1MHz,VDS=15V

pF

5.PulseTest:pulsewidth≤300ms,dutycycle≤2%.

6.Switchingcharacteristicsareindependentofoperatingjunctiontemperatures.

3

/

NTMFD4901NF

ELECTRICALCHARACTERISTICS(TJ=25°Cunlessotherwisespecified)

Parameter

FET

Symbol

TestCondition

Min

Typ

Max

Unit

CHARGES,CAPACITANCES&GATERESISTANCE

Q1

9.7

20

TotalGateCharge

QG(TOT)

QG(TH)

QGS

Q2

Q1

Q2

Q1

Q2

Q1

Q2

Q1

Q2

1.1

2.7

3.3

7.3

3.7

5.3

19.1

42.7

ThresholdGateCharge

Gate?to?SourceCharge

Gate?to?DrainCharge

TotalGateCharge

VGS=4.5V,VDS=15V;ID=10A

nC

nC

QGD

QG(TOT)

VGS=10V,VDS=15V;ID=10A

SWITCHINGCHARACTERISTICS(Note6)

Q1

9.0

14

15

16

14

25

4.0

7.0

Turn?OnDelayTime

RiseTime

td(ON)

Q2

Q1

Q2

Q1

Q2

Q1

Q2

tr

td(OFF)

tf

V

=4.5V,V=15V,

DS

GS

D

ns

I=10A,RG=3.0W

Turn?OffDelayTime

FallTime

SWITCHINGCHARACTERISTICS(Note6)

Q1

6.0

10

14

15

17

32

3.0

5.0

Turn?OnDelayTime

RiseTime

td(ON)

Q2

Q1

Q2

Q1

Q2

Q1

Q2

tr

td(OFF)

tf

V

=10V,V=15V,

GS

D

DS

ns

I=10A,RG=3.0W

Turn?OffDelayTime

FallTime

DRAIN?SOURCEDIODECHARACTERISTICS

TJ=25°C

0.75

0.62

0.45

0.37

1.0

V

=0V,

GS

S

Q1

I=3A

TJ=125°C

TJ=25°C

TJ=125°C

ForwardVoltage

VSD

V

0.70

V

I=2A

=0V,

GS

S

Q2

5.PulseTest:pulsewidth≤300ms,dutycycle≤2%.

6.Switchingcharacteristicsareindependentofoperatingjunctiontemperatures.

4

/

NTMFD4901NF

ELECTRICALCHARACTERISTICS(TJ=25°Cunlessotherwisespecified)

Parameter

FET

Symbol

TestCondition

Min

Typ

Max

Unit

DRAIN?SOURCEDIODECHARACTERISTICS

Q1

23

40

12

21

11

19

12

40

ReverseRecoveryTime

ChargeTime

tRR

Q2

Q1

Q2

Q1

Q2

Q1

Q2

ta

ns

VGS=0V,dIS/dt=100A/ms,IS=3A

DischargeTime

tb

ReverseRecoveryCharge

QRR

nC

PACKAGEPARASITICVALUES

Q1

Q2

Q1

Q2

Q1

Q2

Q1

Q2

0.38

0.65

0.054

0.007

1.5

SourceInductance

DrainInductance

GateInductance

GateResistance

LS

LD

LG

RG

nH

nH

nH

W

TA=25°C

1.5

0.8

0.8

5.PulseTest:pulsewidth≤300ms,dutycycle≤2%.

6.Switchingcharacteristicsareindependentofoperatingjunctiontemperatures.

ORDERINGINFORMATION

Device

Package

Shipping?

NTMFD4901NFT1G

DFN8

(Pb?Free)

1500/Tape&Reel

?Forinformationontapeandreelspecifications,includingpartorientationandtapesizes,pleaserefertoourTapeandReelPackaging

SpecificationsBrochure,BRD8011/D.

5

/

NTMFD4901NF

TYPICALCHARACTERISTICS?Q1

40

35

30

25

20

15

10

5

50

3.8V

3.6V

3.4V

VDS≥5V

45

40

4.5V

10V

)

)

A

A

(

(

35

T

T

N

E

R

R

U

C

TJ=25°C

N

3.2V

E

R

R

U

C

30

25

20

15

10

5

TJ=125°C

N

N

I

3.0V

2.8V

I

A

A

R

R

D

D

,

,

D

D

TJ=25°C

I

I

VGS=2.4V

TJ=?55°C

0

0

0

1

2

3

4

5

0

1

2

3

4

VDS,DRAIN?TO?SOURCEVOLTAGE(V)

VGS,GATE?TO?SOURCEVOLTAGE(V)

Figure1.On?RegionCharacteristics

Figure2.TransferCharacteristics

)

)

W

W

(

(0.020

0.010

0.009

E

C

N

A

T

S

E

C

I=10A

TJ=25°C

N0.018

D

T=25°C

A

T

S

0.016

I

I

S

S

E0.008

R

E

R0.014

VGS=4.5V

E

E

C

R

U

O

C

R

U

O

0.007

0.012

0.010

0.008

0.006

0.004

S0.006

S

?

?

O

O

T

T

?

N

?

0.005

0.004

0.003

N

VGS=10V

I

I

A

A

R

R

D

D

,

,

)

)

n

n0.002

o

o

10S(

D

(

2

3

4

5

6

7

8

9

0

5

10

15

20

25

30

35

40

S

D

R

R

VGS,GATE?TO?SOURCEVOLTAGE(V)

ID,DRAINCURRENT(A)

Figure3.On?Resistancevs.Gate?to?Source

Figure4.On?Resistancevs.DrainCurrentand

Resistance

GateVoltage

10,000

1.8

1.6

I=10A

D

TJ=150°C

V

GS=10V

E)

D

C

R

U

O

E

Z

I

)

L

A

A

1.4

n1,000

S

M

(

?

E

R

O

O

G

T

A

K

A

E

L

?N1.2

TJ=125°C

N(

IE

A

C

R

N

D

1.0

,

I

100

10

A

S

S

D

,T

)

nS

oI

(S

S

E0.8

D

RR

VGS=0V

0.6

?50?25

0

25

50

75

100

125

150

0

5

10

15

20

25

30

TJ,JUNCTIONTEMPERATURE(°C)

VDS,DRAIN?TO?SOURCEVOLTAGE(V)

Figure5.On?ResistanceVariationwith

Figure6.Drain?to?SourceLeakageCurrent

Temperature

vs.Voltage

6

/

NTMFD4901NF

TYPICALCHARACTERISTICS?Q1

1600

1400

1200

1000

800

11

)

V

QT

T=25°C

(

10

9

J

E

V

GS=0V

G

Ciss

A

T

L

)

F

8

O

p

(

V

E

C

7

E

C

R

U

O

N

A

T

6

I

5

C

Coss

S

A

P

A

C

?

600

4

O

Qgs

Qgd

T

?

3

2

1

0

400

E

T

A

G

,

C

Crss

200

0

I=10A

D

,

V

S

TJ=25°C

G

0

5

10

15

20

25

30

0

2

4

6

8

10

121416

18

20

VDS,DRAIN?TO?SOURCEVOLTAGE(V)

Qg,TOTALGATECHARGE(nC)

Figure7.CapacitanceVariation

Figure8.Gate?to?Sourceand

Drain?to?SourceVoltagevs.TotalCharge

10

9

1000

100

V

V

ID=10A

GS=10V

=15V

VGS=0V

DD

)

8

A

(

td(off)

tr

T

N

E

R

R

U

C

7

)

6

s

n

(

5

E

M

E

C

R

U

O

S

I

T

4

,

t

10

1

td(on)

3

TJ=25°C

2

tf

,

S

I

1

0

0.00.1

1

10

100

0.20.3

0.40.50.60.70.8

0.9

RG,GATERESISTANCE(W)

VSD,SOURCE?TO?DRAINVOLTAGE(V)

Figure9.ResistiveSwitchingTimeVariation

vs.GateResistance

Figure10.DiodeForwardVoltagevs.Current

1000

)

100

10

A

(

T

N

E

R

R

U

C

10ms

100ms

1ms

0V≤V≤20V

SINGLEPULSE

GS

N

1

I

A

10ms

R

T=25°C

D

A

SinglePulse

,

D

0.1

0.01

I

R

THERMALLIMIT

PACKAGELIMIT

LIMIT

DS(on)

dc

0.01

0.1

1

10

100

VDS,DRAIN?TO?SOURCEVOLTAGE(V)

Figure11.MaximumRatedForwardBiased

SafeOperatingArea

7

/

NTMFD4901NF

TYPICALCHARACTERISTICS?Q1

100

10

D=0.5

0.2

0.1

0.05

A

Rq

J

,

e

c

n

0.02

a)

W

t

s

1

i/

sC

e

0.01

R(°

l

a

m

r

0.1

e

h

T

SINGLEPULSE

0.01

0.000001

0.00001

0.0001

0.001

0.01

0.1

1

10

100

1000

t,TIME(s)

Figure12.ThermalResponse

8

/

NTMFD4901NF

TYPICALCHARACTERISTICS?Q2

50

45

40

35

30

25

20

15

10

5

60

3.4V

3.2V

TJ=25°C

VDS≥5V

3.0V

2.8V

50

40

30

20

4.5V

10V

)

)

A

A

(

(

T

N

E

R

R

U

C

T

N

E

R

R

U

C

TJ=125°C

N

N

I

I

A

A

R

R

D

D

,

,

D

D

TJ=25°C

I

I

10

0

VGS=2.4V

4

TJ=?55°C

0

0

1

2

3

5

0

0

0

0.5

1

1.5

2

2.5

3

3.5

50

30

VDS,DRAIN?TO?SOURCEVOLTAGE(V)

Figure13.On?RegionCharacteristics

VGS,GATE?TO?SOURCEVOLTAGE(V)

Figure14.TransferCharacteristics

)

)

W

W

(0.020

0.0040

0.0035

(

E

C

N

A

T

E

C

N

A

T

S

I=10A

D

TJ=25°C

S

I0.015

I

S

S

E

R

E

R

0.0030

0.0025

0.0020

VGS=4.5V

E

E

C

R

U

O

C

R

U0.010

O

S

S

?

?

O

O

T

T

?

N

I

?

0.005

0

N

VGS=10V

I

A

A0.0015

R

R

D

D

,

,

)

)

n

0.0010

n

o

o

(

2

3

4

5

6

7

8

9

10

R

5

10152025

30

35

40

45

(

S

S

D

D

R

VGS,GATE?TO?SOURCEVOLTAGE(V)

Figure15.On?Resistancevs.Gate?to?Source

Resistance

ID,DRAINCURRENT(A)

Figure16.On?Resistancevs.DrainCurrent

andGateVoltage

1E?2

1E?3

1.8

I=20A

GS=10V

D

V

E)

TJ=150°C

TJ=125°C

1.6

D

C

R

U

O

E

Z

I

L

)

A

A1.4

M

S

(

E

?

R

O

G

O

T

A

?

N

1.2

1.0

K1E?4

N(

A

E

L

IE

A

C

N

A

R

,

D

S

,T

S

)

D1E?5

nS

I

oI

(S

S

E0.8

D

RR

TJ=25°C

VGS=0V

1E?6

0.6

?50?25

0

25

50

75

100

125

150

5

10

15

20

25

TJ,JUNCTIONTEMPERATURE(°C)

VDS,DRAIN?TO?SOURCEVOLTAGE(V)

Figure17.On?ResistanceVariationwith

Figure18.Drain?to?SourceLeakageCurrent

Temperature

vs.Voltage

9