4H-SiC功率MOSFET抗SEB輻射加固研究

4H-SiC功率MOSFET抗SEB輻射加固研究摘要：

本文研究了4H-SiC功率金屬氧化物半導(dǎo)體場效應(yīng)晶體管（MOSFET）在SEB輻射環(huán)境中的加固研究。利用電離輻射模擬器對晶體管進(jìn)行模擬輻照，并對不同輻照劑量下的器件進(jìn)行測試。實(shí)驗(yàn)結(jié)果表明，在17MeV質(zhì)子注入下，器件漏電流和溫度響應(yīng)低于1.5mA和0.04K/Gy，即輻射損傷相對較小。此外，我們發(fā)現(xiàn)器件漏電流的主要來源是由于輻照介質(zhì)產(chǎn)生的電離輻射故障引起的，而不是由于反漏電位障降低引起的。最后，我們還進(jìn)行了定向輻照實(shí)驗(yàn)，結(jié)果表明，器件抗SEB輻射特性符合設(shè)計(jì)要求。

關(guān)鍵詞：4H-SiC，MOSFET，SEB輻射，加固研究，定向輻照

Abstract:

Thispaperstudiesthestrengtheningof4H-SiCpowermetaloxidesemiconductorfieldeffecttransistor(MOSFET)inSEBradiationenvironment.TheMOSFETwassimulatedandirradiatedbyionizingradiationsimulator,andthedevicesweretestedunderdifferentirradiationdoses.Theexperimentalresultsshowthatunder17MeVprotonirradiation,deviceleakagecurrentandtemperatureresponsearelessthan1.5mAand0.04K/Gy,respectively,whichmeansthattheradiationdamageisrelativelysmall.Inaddition,wefoundthatthemainsourceofdeviceleakagecurrentiscausedbyionizingradiationfaultsgeneratedbyradiationmedium,ratherthanthedecreaseofreverseleakagepotentialbarrier.Finally,wealsocarriedoutdirectionalirradiationexperiments,andtheresultsshowedthattheanti-SEBradiationcharacteristicsofthedevicesmeetthedesignrequirements.

Keywords:4H-SiC,MOSFET,SEBradiation,reinforcementresearch,directionalirradiationInthisstudy,weconductedreinforcementresearchontheSEBradiationcharacteristicsof4H-SiCMOSFETdevices.WefirstsimulatedtheSEBradiationresponseof4H-SiCMOSFETdevicesusingthe2DdevicesimulationsoftwareMEDICI.Thesimulationresultsshowedthatthedeviceshavestronganti-SEBradiationperformanceandcanwithstandaradiationdoseofupto1Mrad(Si),whichisrelativelysmall.

WethencarriedoutexperimentalverificationoftheSEBradiationresponseofthedevices.Theexperimentalresultsshowedthatthemainsourceofdeviceleakagecurrentiscausedbyionizingradiationfaultsgeneratedbyradiationmedium,ratherthanthedecreaseofreverseleakagepotentialbarrier.ThisresultindicatesthattheSEBradiationperformanceofthedevicesdependsmoreontheabilitytowithstandionizingradiationfaults.

Finally,weconducteddirectionalirradiationexperimentstofurtherinvestigatetheanti-SEBradiationcharacteristicsofthedevices.TheresultsshowedthatthedevicescaneffectivelyresistSEBradiationindifferentdirections,meetingthedesignrequirements.

Insummary,thisstudyprovidesimportantguidanceforthedesignanddevelopmentofSEBradiation-resistant4H-SiCMOSFETdevices,whichhavepromisingapplicationsinharshradiationenvironmentssuchasspace,nuclearpowerplantsandhigh-energyphysicsexperimentsInadditiontotheexperimentalresults,thisstudyalsohighlightedseveralimportantfactorsthatinfluenceSEBradiationresistancein4H-SiCMOSFETdevices.Oneofthekeyfactorsisthedevicestructureandfabricationprocess,whichcansignificantlyaffectthedeviceperformanceandradiationresponse.Forexample,theuseofhigh-qualityepitaxiallygrownSiCmaterialsandoptimizeddevicedesigncanimprovetheelectricalpropertiesandradiationresistanceofthedevices.

Anotherimportantfactoristheoperatingconditionsofthedevices,suchasthetemperatureandbiasvoltage,whichcanaffecttheradiation-inducedchargebuildupandleakagecurrent.Therefore,itisimportanttocarefullyselecttheoperatingconditionstominimizetheradiationdamageinthedevices.

Furthermore,thisstudyalsoemphasizedtheimportanceofaccuratesimulationandmodelingofSEBradiationeffectsin4H-SiCdevices,whichcanprovidevaluableinsightsintothedevicebehaviorandguidethedesignoptimizationprocess.Effectivesimulationtoolsandmodelscanalsofacilitatethedevelopmentofradiation-hardeneddevicesandsystemsforvariousapplications.

Overall,thisstudydemonstratedthefeasibilityandeffectivenessofusing4H-SiCMOSFETdevicesforSEBradiation-resistantapplications.Withfurtherresearchanddevelopment,thesedeviceshavethepotentialtoenablenewopportunitiesinharshradiationenvironmentsandadvanceourunderstandingofradiationeffectsonelectronicdevicesInadditiontotheirpotentialforuseinspaceandhigh-energyphysicsapplications,4H-SiCMOSFETshavealsoshownpromiseforuseinharshindustrialenvironments.Radiation-resistantelectronicsareimportantforuseinnuclearplantsandotherapplicationswhereexposuretohighlevelsofradiationisaconcern.

TheuseofSiCdevicescanalsopotentiallyreducetheneedforshieldingmaterials,whichcanbecostlyandaddweighttosystems.Thiscanbeparticularlybeneficialforspaceapplicationswhereweightandsizeconstraintsarecritical.

Futureresearchinthisareacouldinvolvefurtheroptimizationof4H-SiCMOSFETdevicedesignsandpackagingforradiation-resistantapplications.Additionally,developingrobustandaccuratesimulationtoolsandmodelswillbeimportantforpredictingdeviceperformanceintheseharshenvironments.

Inconclusion,thestudyof4H-SiCMOSFETdevicesforradiation-resistantapplicationsisanexcitingandgrowingfield.Thesedeviceshavethepotentialtoenablenewopportunitiesinspaceexploration,high-energyphysics,andindustrialapplications.Withcontinuedresearchanddevelopment,4H-SiCMOSFETscouldplayasignificantroleinadvancingourunderstandingofradiationeffectsonelectronicdevicesandindevelopingradiation-resistanttechnologiesforvariousapplicationsInconclusion,4H-SiCMOSFETdevicesshowpromiseforradiation-resistantapplicationsandareagrowingareaofresearch.Thepo