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晶體生長(zhǎng)計(jì)算軟件FEMAG系列之晶體生長(zhǎng)各種方法第1頁(yè)/共20頁(yè)BulkCrystalsMaterialsFEMAGSoft

?2010Wholeindustriesrelyonbulk-growncrystalsofavarietyofmaterialsSilcion/GermaniumforsemiconductorandsolarindustryIII-Vcompunds(GaAsInpInSbSiCGaNetc)fortelecommication,LED,defenseandsolarindustryHgCdTeforinfraredimagingFluoride/Halide/oxidescintillatorcrystalsforhigh-energyphysics,medicalimagingandopticalindustriesetc.第2頁(yè)/共20頁(yè)BulkCrystalGrowthMethodsFEMAGSoft

?2010Czochralski(CZ)FloatingZone(FZ)DirectionalSolidification(DSS)Vertical/HorizontalBridgman(VB) VerticalGradientfreeze(VGF)PhysicalVaporTransport(PVT)第3頁(yè)/共20頁(yè)SiliconCrystalGrowthMethodFEMAGSoft

?2010StringRibbon(PatentedbyEVERGREEN)EFG第4頁(yè)/共20頁(yè)HotzoneimportanceFEMAGSoft

?2010ThekeyimportantthingforallgrowthprocessesistheHotzoneandassociatedoperatingcondtions,whichcontrolthemajorcharactersticsofcrystals,andthestructureofthehotzoneandassociatedoperatingconditionsarethemajorknow-howofeachICwafermanufacturers.第5頁(yè)/共20頁(yè)CzochralskiGrowthMethodFEMAGSoft

?2010FEMAGSoft

?2006第6頁(yè)/共20頁(yè)CzochralskiGrowthMethodFEMAGSoft

?2010FEMAGSoft

?2006CzochralskiMethodAround90%singlecrystalgrownbyCzmethodinICindustryPartofGermaniumcrystalgrownbyCZmethodSappherandlotsCompoundcrystalgrownbyCZoritsvariants,suchasKyropoulos,LECetc.MarketshareofCZwaferinsolarmarketslightlylowerthanDSSmcwafer第7頁(yè)/共20頁(yè)CzochralskiGrowthMethodFEMAGSoft

?2010FEMAGSoft

?2006HottopicsonceinICindustry,andcurrentlyhottopicsforsolar:allaboutgrowthyield,andthenqualityimprovementCCZwithmulti-meltpartitionsMCZGrowthrateimprovementImpuritycontrol(oxygen,carbon)anddopantsmicrovoidsanddislocationsoncellefficiency第8頁(yè)/共20頁(yè)CzochralskiGrowthMethod(MCZ)FEMAGSoft

?2010FEMAGSoft

?2006Costreductionislimitedwithrespectedtotheequipments/consumablesmodificationsInnotativeeffortsarerequiredtofurtherbeimproved第9頁(yè)/共20頁(yè)CzochralskiGrowthMethod(MCZ)FEMAGSoft

?2010FEMAGSoft

?2006Vertical:Cusp:Horizontal:

FEMAGSoft?2006第10頁(yè)/共20頁(yè)CzochralskiGrowthMethodFEMAGSoft

?2010FEMAGSoft

?2006Itisassumedthatforacertainregionofthethermalstressesthecrystalisinametastablestate,andacertainperturbationenergyisnecessarytoleavethismetastablestate.Bythismodel,itcanbeunderstoodthatthecrystalcanbearhigherstressesthanthecriticalvaluesdeterminedbyatensiletest.Conformingtotheclassicalideaofdislocationgenerationitstartssomewherenearthegrowthinterface,wherethehigheststressesarelocatedandthengrowsdeeperintothecrystal.Atthesepointsofhighstresslevel,thedislocationprocessmaybestartedduetoaperturbationenergyresultingfrom:-temperaturefluctuations(hydrodynamicand/orgrowthsysteminstabilities)-localbackmelting-particlesreachingthegrowthinterface.Structurelosecurrentlyisthemainissueongrowthyield第11頁(yè)/共20頁(yè)FloatingZoneGrowthMethodFEMAGSoft

?2010FEMAGSoft

?2006Mainlyforhigh-powerdevicesWorld-recordcellefficiencyisbasedTooexpensiveduetoequipmentandfeedstock第12頁(yè)/共20頁(yè)DSSGrowthMethodFEMAGSoft

?2010FEMAGSoft

?2006第13頁(yè)/共20頁(yè)DSSGrowthMethodFEMAGSoft

?2010FEMAGSoft

?2006ManufacturersarebenefitingfromeffortsdidonCZ/VGFprocessforICinpastyears.第14頁(yè)/共20頁(yè)DSSGrowthMethodFEMAGSoft

?2010FEMAGSoft

?2006MajorissuesforDSSgrowthprocess:GrowthyieldimprovementGrain-sizecontrolandimprovementDopant/Impurities(C/N)distributionDislocationGrowthrateHeaterpowerdistributionNotkeyissuesforDSSgrowthprocess:Costisonly1/3orCZprocess,morethan50%marketshareLowoxygenconcentrationLowrequirementsofsiliconfeedstock第15頁(yè)/共20頁(yè)HottopicsforDSSGrowthMethodFEMAGSoft

?2010FEMAGSoft

?2006Continuousfeeding:sameasCCZ,thepontentialforcostreductionislimited:RequirementofadditonalfeedingsystemRequirementofsmall-sizeorevensiliconpowderfeedstockMonocrystallinecasting:CZ-likequalitybutwithDSScost,thenhugecostreductionNoadditionalinvestmentonequipmentHotzonedesign(temperatureprofilenearseedandheaterpowerdistribution)LeadersareBPSolar,GTSolarandChinesecompanies.第16頁(yè)/共20頁(yè)HottopicsforDSSGrowthMethodFEMAGSoft

?2010FEMAGSoft

?2006第17頁(yè)/共20頁(yè)HottopicsforDSSGrowthMethodFEMAGSoft

?2010FEMAGSoft

?2006Factsaboutmono-ingotbyDSS:1)Thecellefficiencyofgoodqulaitymono-waferbyDSSisveryclosetomono-waferbyCZ(18.8%fromGT)2)Onaverage,thedifferencebetweenmonoCZandDSSisonly0.5%~1%difference,and1%higherthantraditionalDSSmulti-wafer.3)Overallproductioncostisonly1/3ofCZ,butwi

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