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rkwasmadeofaladder-likestructureshownasanexampleinFig.9(a).ThedistanceofthelinebetweenFETAandFETBiscloseto1mm,whichasapurelinedelaywouldresultinabout20psofdelay.Butthedelaydifferencewasmorethan80psandalsothepulsewidthoftheinputsignalwaslargerthanpredicted.Sincethetransistorsdonotswitchsimultaneously,theystarttoloadeachotherandconsumemorepower.Thereasonforincreaseddelayandwidenedpulsewidthisthesignaldependentgatecapacitancethatcausesconsiderableamountofsecondharmonicdistortionintheunterminatedladder-likeinputnetworkinFig.9(a).wherethesignalpathsarealmostequalinlength.Thisimprovedthetimingbehaviourandtheinputwaveformphasinginthesimulationswasnearlythesame.Onlythepulsewidthwasstillsomewhatlarge.Theequalinputroutingincreasedthedrainefficiencyoftheamplifierfrom55to68%.Theeffectsofgatecapacitancetogetherwithadditionalsolutionstotimingproblemshavebeenpublishedin[10].4FinalcircuitTheamplifierdiesized1.96mm×3.62mm(W×L)wasglueddirectlytoa6mmthickaluminiumheatsink.Thegold-platedprintedcircuitboard(PCB)containingoutputmatchingnetworkandsomeofthegatebiasingnetworkwasmountedontotheheatsink.NextthechipwaswirebondedandSMAconnectorswereaddedtothecircuit.ThefinalcircuitschematicisshowninFig.10,wherethedashedlineisusedtoseparatetheon-andoff-chipcomponents.LowerleftsideinthefigureisanLC-matchingnetworkwhichisfollowedbyanRC-sinkcircuit.TheRC-circuitincreasesthestabilityoftheamplifierbyprovidingawidebandloadingathigherfrequencies.Inthegatebiascircuit,upwardsfromthematchingcircuitistheparallelRLC-circuitthatisahighimpedanceattheoperatingfrequencywhiletheoff-chipparallelRC-circuitprovidesadditionalbiasresistanceinthelowfrequencies,thusincreasingthestabilityoftheamplifier.Ontherightsideofthetransistor,thetunedoutputresonatortogetherwiththeoff-chipmatchingcircuitisshown.Drainsupplyvoltageisdirectedthroughalongtransmissionlinethatisahighimpedanceattheoperationfrequency.TheparallelgateRCbiascircuitandoutputmatchingcircuitwereimplementedonthePCB,whichsimplifiedtheimplementedchipshowninFig.11.Upperleftbox(a)istheLCinputmatching,lowerleftbox(b)istheRLCbiasnetworkandontherightofthebiasisthebox(c)containingtheRC-sinkcircuit.Theequallengthinputlinesareshowninthebox(d),wheretheaddedseriesresistors(5Ωeach)showaswidesectionsinbetweentheequallengthlines.Thetransistorsetisshowninbox(e)anditconsistsof12transistorseachofwhichcontain18fingerswithawidthof50lmeach.Thesaturationcurrentofthetransistorisabout4A.Ontherightfromthetransistorsetthereistheoutputpathtogetherwiththeparallelresonatorinthebox(f).Bondingpadsarebelow(Gatebias),ontheleft(RFin)andup(RFoutanddrainbias).Twoorthreebondwiresareusedtominimizeseriesresistanceandinductanceandalsotomaximizecurrentcapabilityofthewires.4.1TheimplementedamplifierTheimplementedamplifierisshowninFig.12togetherwithapictureofthechiplayout.Theresonatorstructureontherightsideofthelayoutisclearlyvisibleintheactualchip.ThePCBhadtobedrilledopenandthealuminiumbaseplatemachinedforlevellingthechipalongthePCBsurface.Thiswaythebondwiresarekeptasshortaspossible.ThePCBcontainstheimpedancetransformingnetworkrequiredbytheoutputoftheamplifier.Further,thesupplyisprovidedthroughlonglinethathasrelativelyhighimpedanceatthefundamentalandhaslowresistanceatDC.ApartofthegatebiasingnetworkisalsolocatedinthePCB.ThetotalsizeofthePCBis17.1mm×37.6mm(Width9Length).5Measuredperformance5.1MeasurementsetupsAsingletonemeasurementwasusedtomeasuretheamplifieroutputpowerandefficiency.AnIFR2025signalgeneratorandabufferamplifierfromMini-Circuitsprovidedthedrivesignallevelof25dBm.TheoutputwasmeasuredwithaRohde&SchwarzZVA8vectorspectrumanalyser(VSA).TheloadpullmeasurementswereperformedwithFocusMicrowavesMPT1820tunersthatwereappliedbothtotheinputandoutputoftheamplifier.AsasourcewasRohde&SchwarzSMU200Awithabufferamplifier.Theinputpowerlevelswerefrom15to25dBm.TheRFinputandoutputpowersweremeasuredwithAnritsuML2438Apowermeterwithdualinput.TheharmoniccontentofthespectrumandoscillationspikesweremeasuredwithRohde&SchwarzFSQ40VSA.5.2TuningoftheamplifierInthefirstmeasurementstheamplifierdidnotmeetthesimulatedresponse.Measurementsgaveonly0.96Wofoutputpowerat1575MHzwhenthesimulatedfigureswere3.4Wofoutputpoweranddrainefficiencyof70%,allatsupplyvoltageof5.5V.Oursuspiciondirectedtowardsascribelinethatpassedveryclosetotheoutputresonatorstructureandpossiblycouldcoupletheoutputtotheinputoftheamplifier.ThescribelinewascutwithanUV-laserbutthishadnoeffecttothefrequencyresponse.ThemeasuredDCcurrentoftheamplifierwasconsiderablyhigherthansimulated,suggestingthattheloadimpedanceoftheswitchingstagewastoolow.Theimpedanceseenatthedrainwasincreasedbyreplacingapairof2.7pFhigh-Qceramiccapacitors(AmplifierA,inTable1)intheexternaloutputmatchingnetworkwithone2.9pFcapacitor(AmplifierB,inTable1).Thismodificationincreasedtheoutputpowerto2Wandthedrainefficiencyto56%atthefrequencyof1625MHz.Theoutputpowerandefficiencyinthefrequencyrangeof1.5–1.7GHzisshowninFig.13.Theoutputpowerismaintainedwithin0.53dBinthedesiredfrequencyrange(1626.5–1660.5MHz)asshowninFig.13.Withinthatsamefrequencybandthedrainefficiencystaysabove53%whilethehighestefficiency,56%,isachievedat1626MHz.Byadjustingthesupplyvoltagetheefficiencyoftheamplifiercanbeincreasedevenmore,whichcanbeseenfromFig.14.Drainefficiencyincreasessteadilywhensupplyislowered.Atasupplyvoltageof2.5Vandfrequencyof1625MHz,theamplifierhasadrainefficiencyof65%.Thisimpliesthattheamplifiercanmaintainanefficientoperationalsowhenusedinanenvelopeeliminationandrestoration(EER)system.ThehighpeaksinatlowestsupplyvoltagesinFig.14arecausedbydrivesignalfeedthroughthatsumsintotheoutputsignal.5.3LoadpullmeasurementsMeasurementswereperformedwithloadpullsystemat1.6GHzspotfrequencytoseveralmodifiedamplifiers.ThedifferencesbetweentheamplifiersareshowninTable1.InthenextchapterswewillmainlyconcentrateonamplifiersCandDforreasonsthatwillbeapparentlateron.LetusnowdiscusstheamplifierCwhichisverysimilartoamplifierBmeasuredearlier.TunersoftheloadpullsystemwereconnectedtotheoutputsandinputsoftheamplifierC.Theloadtuningoffundamental,secondharmonicandthirdharmonicresultedinabout2.4Wofoutputpower(33.8dBm)whilemaintainingabout57.4%drainefficiencyatthispeakpowerspot.ThefundamentalloadimpedanceintermsofpowerwasatslightlyhigherimpedancethantheoptimumdrainefficiencypointasshowninFig.15,wherethe-1dBoutputpowerpoints(triangles)and-5%unitefficiencypoints(circles)areshown.Thepeakefficiencypointinthefigureis(a)(58.6%)andpeakpoweris(b)(33.9dBm).Theoptimumefficiencyareaisratherlarge.Bothoftheloadharmonicswereevenmorerelaxed,anddifferencesforexampleinoutputpowerhadtobemeasuredintenthsofdecibelsratherthanindecibels.Further,theefficiencydifferencesweremeasuredinoneortwopercentageunitsinsteadoffivetoten.Asanexample,thethirdharmonicoptimumoutputpointswithin0.2dBfrommaximum(triangles)andefficiencypointswithin2%unitsfrommaximum(circles)areshowninFig.16.Asitcanbeseen,thethirdharmonicimpedanceisnotascriticalasthefundamentaltone.Theoptimumefficiencyismarkedwith(a)andmaximumoutputpowerismarkedwith(b).Itshouldbenotedthattheadjustmentofthethirdharmonicdidnotincreaseoutputpowerontheabsolutescalenorthedrainefficiency.Thepeakoutputpowervalueremainedwithin0.2dBofthepeakvalueofthefundamentalloadpullandthedrainefficiencyrosefrom58.6onlyto59.8%shownattheSmithchartpoint(a)inFig.16.Theinsensitivityoftheamplifiertoharmonictuningiscausedbythelongdrainbiaslinethatislowimpedanceatthesecondharmonicandthelowpassmatchingnetworkattheoutputthatattenuatesthethirdharmonic.5.4SourcepullmeasurementsThesourcepullofthefundamentalimpedancedidincreasetheoutputpowerandefficiencyofamplifierCslightly.Theoptimumdrainefficiency(circles)andoutputpowerpoints(triangles)(a)and(b),respectively,areshownFig.17.Thepowerpointsarewithinthelimitsof0.2dBandefficiencywithinadifferenceof2%units.Theamplifierefficiencyrosewiththefundamentalsourcetuningto62.1%(pointa)andtheoutputtoabout2.5W(34.1dBm,pointb).Harmonicsourcepullmeasurementsshowedthattheharmonicimpedanceswerenotascriticalasthefundamental.ThisisduetothelowpassinputmatchingandthewidebandRC-sinkcircuit.TheRC-sinkcircuitlowersthecalculatedmagnitudeoftheimpedanceespeciallyathighfrequencies,asshowninFig.18(b).Thishasaneffecttobothsecondandthirdharmonicimpedances.ThemagnitudeoftheimpedancewithouttheRC-sinkisshownasareferenceinFig.18(a).Inbothcasestheinputmatchingcircuitswerenotincludedinthecalculations.5.5StabilityoftheamplifierAtfirsttheamplifierAdidshowsomeunstablebehaviourduetosupplyvoltagemodulationcausedbyinsufficientbiasdecouplingatthedrain.Theinstabilityappearedatlowinputpowerlevelsasnoisesidebandsthatliedonbothsidesoffundamentalfrequency.Wheninputpowerwasloweredfurtheron,theamplifierdidbreakintofullscaleoscillation.Asacure,thesupplyimpedancewasloweredbyalargenumberofdecouplingcapacitors(4×470pF)addedtothedrain.InanEERapplication,thesupplymodulatorwillprovidelowenoughimpedanceatthedrain.WhentheloadpullwasdonetotheamplifiersA,CandD,aspuriousoscillationdetectionwasappliedatalevelof-50dBc.Withthissetupwewereabletocomparethesensitivityofdifferentamplifierstooscillations.WefoundoutthattheRC-sinkcircuitusedinamplifiersAandCindeedimprovedstability,especiallyinthelowinputpowerlevels.DatausedforcomparisonwasmeasuredfromamplifierD,wheretheRC-sinkwascutusinganultravioletlaser.Theoscillati

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