半導(dǎo)體封裝制程與設(shè)備材料知識(shí)介紹課件

半導(dǎo)體封裝制程與設(shè)備材料知識(shí)介紹

半導(dǎo)體封裝制程與設(shè)備材料知識(shí)介紹

1半導(dǎo)體封裝制程概述半導(dǎo)體前段晶圓wafer制程半導(dǎo)體后段封裝測(cè)試

封裝前段（B/G-MOLD）－封裝后段（MARK-PLANT）－測(cè)試封裝就是將前製程加工完成後所提供晶圓中之每一顆IC晶粒獨(dú)立分離，並外接信號(hào)線至導(dǎo)線架上分離而予以包覆包裝測(cè)試直至IC成品。半導(dǎo)體封裝制程概述半導(dǎo)體前段晶圓wafer制程2半導(dǎo)

體

制程Oxidization(氧化處理)Lithography(微影)Etching(蝕刻)DiffusionIonImplantation(擴(kuò)散離子植入)Deposition(沉積)WaferInspection(晶圓檢查)Grind&Dicing(晶圓研磨及切割)DieAttach(上片)WireBonding(焊線)Molding(塑封)

Package(包裝)WaferCutting(晶圓切斷)WaferReduce

(晶圓減薄)LaserCut&packagesaw(切割成型)Testing(測(cè)試)Lasermark(激光印字)IC制造開始前段結(jié)束后段封裝開始製造完成半導(dǎo)體制程OxidizationLi3封裝型式概述IC封裝型式可以分為兩大類，一為引腳插入型，另一為表面黏著型構(gòu)裝型態(tài)構(gòu)裝名稱常見應(yīng)用產(chǎn)品SingleIn-LinePackage(SIP）PowerTransistorDualIn-LinePackage(DIP）SRAM,ROM,EPROM,EEPROM,FLASH,MicrocontrollerZigzagIn-LinePackage(ZIP）DRAM,SRAMSmallOutlinePackage(SOP）Linear,Logic,DRAM,SRAMPlasticLeadedChipCarrier(PLCC）256KDRAM,ROM,SRAM,EPROM,EEPROM,FLASH,MicrocontrollerSmallOutlinePackage(SOJ）DRAM,SRAM,EPROM,EEPROM,FLASHQuadFlatPackage(QFP）MicroprocessorBALLGridArray(BGA）Microprocessor封裝型式概述IC封裝型式可以分為兩大類，一為引腳插入型，另一4封裝型式(PACKAGE)ThroughHoleMountShapeMaterialLeadPitchNoofI/OTypicalFeaturesCeramicPlastic2.54mm(100miles)8~64DIPDualIn-linePackagePlastic2.54mm(100miles)1directionlead3~25SIPSingleIn-linePackage封裝型式(PACKAGE)Throug5封裝型式ThroughHoleMountShapeMaterialLeadPitchNoofI/OTypicalFeaturesPlastic2.54mm(100miles)1directionlead16~24ZIPZigzagIn-linePackagePlastic1.778mm(70miles)20~64S-DIPShrinkDualIn-linePackage封裝型式ThroughHoleSh6封裝型式ThroughHoleMountShapeMaterialLeadPitchNoofI/OTypicalFeaturesCeramicPlastic2.54mm(100miles)half-sizepitchinthewidthdirection24~32SK-DIPSkinnyDualIn-linePackageCeramicPlastic2.54mm(100miles)PBGAPinGridArray封裝型式ThroughHoleSh7封裝型式SurfaceMountShapeMaterialLeadPitchNoofI/OTypicalFeaturesPlastic1.27mm(50miles)2directionlead8~40SOPSmallOutlinePackagePlastic1.0,0.8,0.65mm4directionlead88~200QFPQuad-FlatPack封裝型式SurfaceShapeMa8封裝型式SurfaceMountShapeMaterialLeadPitchNoofI/OTypicalFeaturesCeramic1.27,0.762mm(50,30miles)2,4directionlead20~80FPGFlatPackageofGlassCeramic1.27,1.016,0.762mm(50,40,30miles)20~40LCCLeadlessChipCarrier封裝型式SurfaceShapeMa9封裝型式SurfaceMountShapeMaterialLeadPitchNoofI/OTypicalFeaturesCeramic1.27mm(50miles)j-shapebend4directionlead18~124PLCCPlasticLeadedChipCarrierCeramic0.5mm32~200VSQFVerySmallQuadFlatpack封裝型式SurfaceShapeMa10SanDiskAssemblyMainProcessDieCure(Optional)DieBondDieSawPlasmaCardAsyMemoryTestCleanerCardTestPackingforOutgoingDetaping(Optional)Grinding(Optional)Taping(Optional)WaferMountUVCure(Optional)LasermarkPostMoldCureMoldingLaserCutPackageSawWireBond

SMT(Optional)SanDiskAssemblyMainProcessD11半導(dǎo)體設(shè)備供應(yīng)商介紹-前道部分PROCESSVENDORMODELSMT-PRINTERDEKHOR-2ISMT–CHIPMOUNTSIMENSHS-60TAPINGNITTODR3000-IIIINLINEGRINDER&POLISHACCRETECHPG300RMSTANDALONEGRINDERDISCO8560DETAPINGNITTOMA3000

WAFERMOUNTERNITTOMA3000DICINGSAWDISCODFD6361TSKA-WD-300T半導(dǎo)體設(shè)備供應(yīng)商介紹-前道部分PROCESSVENDORMO12PROCESSVENDORMODELDIEBONDHITACHIDB700ESECESEC2007/2008ASMASM889898CUREOVENC-SUNQDM-4SWIREBONDERK&SK&SMAXUMULTRASKWUTC-2000ASMEagle60PLASMACLEANMARCHAP1000TEPLATEPLA400MoldTOWAYPS-SERIESASAOMEGA3.8半導(dǎo)體設(shè)備供應(yīng)商介紹-前道部分PROCESSVENDORMODELDIEBONDHITA13半導(dǎo)體設(shè)備供應(yīng)商介紹PROCESSVENDORMODELINKMARKE&RE&RTECA-PRINTPR-601LASERMARKGPMSE+SE39+SE36+SE45鈦昇BLAZON-2600BALLATTACHVANGUARDVAI6300AMSAMS1500iD/DYAMADACU-1028-1GPMSE00+SH01+SH02+SE07FORMINGYAMADACU-1029-1GPMSEH01+SH02+SH25半導(dǎo)體設(shè)備供應(yīng)商介紹PROCESSVENDORMODELIN14半導(dǎo)體設(shè)備供應(yīng)商介紹PROCESSVENDORMODELSINGULATIONGPMSN39+SH52YAMADACUPLATINGMECOEDF+EPL2400AEMSBP2400-EDLEADSCANRVSILS-7700ICOS9450EVER-TECHTS-60半導(dǎo)體設(shè)備供應(yīng)商介紹PROCESSVENDORMODELSI15半導(dǎo)體設(shè)備供應(yīng)商介紹半導(dǎo)體設(shè)備供應(yīng)商介紹16常用術(shù)語(yǔ)介紹SOP-StandardOperationProcedureFMEA-FailureModeEffectAnalysisSPC-StatisticalProcessControlDOE-DesignOfExperimentIQC/OQC-Incoming/OutingQualityControlMTBA/MTBF-betweenassit/FailureUPH-UnitsPerHourCPK-品質(zhì)參數(shù)常用術(shù)語(yǔ)介紹SOP-StandardOperationP17晶圓研磨(GRINDING)1.GRINDING工藝l

研磨1.研磨分為粗磨與細(xì)磨,晶圓粗糙度需小於0.08um..2.細(xì)磨厚度在10~20um之間,而二次研磨參數(shù)中,細(xì)磨厚度為15um(二次研磨變更作業(yè)膠膜為230um).3.研磨標(biāo)準(zhǔn)厚度:a.

HSBGA:11~13MIL標(biāo)準(zhǔn)研磨厚度為12MILb.

PBGA:11~16MIL標(biāo)準(zhǔn)研磨厚度為12MIL.c.

LBGA:9.5~10.5MIL標(biāo)準(zhǔn)研磨厚度為10MIL.5.研磨時(shí)機(jī)器會(huì)先量側(cè)晶片厚度以此為初始值

,粗磨厚度及最終厚度(即細(xì)磨要求的厚度).晶圓研磨(GRINDING)1.GRINDING工藝l

18

Spindle1粗磨

spindle2細(xì)磨

清洗區(qū)

離心除水

離心除水

背面朝上

Wafer研磨時(shí)晶圓與SPINDLE轉(zhuǎn)向

Spindle1粗磨spindle2細(xì)磨192.Grinding相關(guān)材料ATAPE麥拉BGinding砂輪CWAFERCASSETTLE2.Grinding相關(guān)材料20工藝對(duì)TAPE麥拉的要求：1。MOUNTNodelamination

STRONG2。SAW

ADHESIONNodieflyingoffNodiecrack工藝對(duì)TAPE麥拉的要求：1。MOUNT21工藝對(duì)麥拉的要求：3。EXPANDING

TAPEDiedistance ELONGATION

Uniformity

4。PICKINGUP

WEAK

ADHESIONNocontamination工藝對(duì)麥拉的要求：3。EXPANDING22

TAPE種類:a.

ADWILLD-575UV膠膜(黏晶片膠膜白色)厚度150UMb.

ADWILLＧ-295黏晶片膠膜黑色厚度120UMc.

ADWILLS-200熱封式膠帶(去膠膜膠帶)白色厚度７５ＵＭd.

FURUKAWAUC-353EP-110AP(PRE-CUT)UV膠膜白色厚度110ume.

FURUKAWAUC-353EP-110AUV膠膜白色厚110umf.

FURUKAWAUC-353EP-110BPUVTAPE白色厚110um.g.

ADWILLG16P370黑色厚80UM.h.

NITTO224SP75UM

TAPE種類:233.Grinding輔助設(shè)備AWaferThicknessMeasurement厚度測(cè)量?jī)x

一般有接觸式和非接觸式光學(xué)測(cè)量?jī)x兩種；BWaferroughnessMeasurement粗糙度測(cè)量?jī)x主要為光學(xué)反射式粗糙度測(cè)量方式；3.Grinding輔助設(shè)備244.Grinding配套設(shè)備ATaping貼膜機(jī)BDetaping揭膜機(jī)CWaferMounter貼膜機(jī)4.Grinding配套設(shè)備25

Taping需確認(rèn)wafer是否有破片或污染或者有氣泡等等現(xiàn)象.特別是VOID；上膠膜後容易發(fā)生的defect為龜裂或破片；

切割正面上膠

上膠

電腦偵測(cè)方向

取出

背面朝下

Taping切割正面上膠上膠電腦偵測(cè)方向取出26DetapingDetaping27l

Wafermount

Waferframel

Wafermount

Waferframe28晶圓切割(Dicing)1.Dicing設(shè)備介紹ADISCO641/651系列BACCERTECH東京精密200T/300T晶圓切割(Dicing)1.Dicing設(shè)備29MainSectionsIntroductionCuttingArea:Spindles(Blade,Flange,CarbonBrush),CuttingTable,Axes(X,Y1,Y2,Z1,Z2,Theta),OPCLoaderUnits:Spinner,Elevator,Cassette,

RotationArmMainSectionsIntroductionCutt30BladeClose-ViewBladeCuttingWaterNozzleCoolingWaterNozzleBladeClose-ViewBladeCuttingW31Twin-SpindleStructureRearFrontX-axisspeed:upto600mm/sCuttingspeed:upto80mm/sTwin-SpindleStructureRearFron32AFewConceptsBBD(BladeBrokenDetector)Cutter-set:ContactandOpticalPrecisionInspectionUp-CutandDown-CutCut-inandCut-remainAFewConceptsBBD(BladeBroke33晶圓切割(Dicing)2.Dicing相關(guān)工藝ADieChipping芯片崩角BDieCorrosive芯片腐蝕CDieFlying芯片飛片晶圓切割(Dicing)2.Dicing相關(guān)34Wmax,Wmin,Lmax,DDY,DY規(guī)格— DY<0.008mm Wmax<0.070mm Wmin<0.8*刀厚 Lmax<0.035Wmax,Wmin,Lmax,DDY,DY35

切割時(shí)之轉(zhuǎn)速予切速:a.

轉(zhuǎn)速:指的是切割刀自身的轉(zhuǎn)速b.

切速:指的是Wafer移動(dòng)速度.主軸轉(zhuǎn)速:S1230:30000~45000RPMS1440:30000~45000RPM27HEED:35000~45000RPM27HCCD:35000~45000RPM27HDDC:35000~45000RPM

切割時(shí)之轉(zhuǎn)速予切速:主軸轉(zhuǎn)速:36

切割至膠膜時(shí)所能切割之深度

UVTAPE:0.100+/-0.005mm(ForLintec)BLUETAPE:0.050+/-0.005mm(ForNittospv224)G-16Tape:0.050+/-0.005mm(ForLintecG-16)UVTape:0.08+/-0.005mm(ForFURUKAWAUC-353EP-110AP)

切割至膠膜時(shí)所能切割之深度37晶圓切割(Dicing)3.Dicing相關(guān)材料ATapeBSawBLADE切割刀CDI去離子水、RO純水晶圓切割(Dicing)3.Dicing相關(guān)38切割刀的規(guī)格

因所切產(chǎn)品的特性不同(Wafer材質(zhì)、厚度、切割道寬度)，所需要的切割刀規(guī)格也就有所不同，其中規(guī)格就包括了刀刃長(zhǎng)度、刀刃寬度、鑽石顆粒大小、濃度及Nickelbondhardness軟硬度的選擇，只要任何一種規(guī)格的不同，所切出來的品質(zhì)也就不一樣。P4切割刀的規(guī)格P439Sawblade對(duì)製程的影響

ProperCutDepthIntoTape(切入膠膜的理想深度)分析:理想的切割深度可防止1.背崩之發(fā)生。2.切割街區(qū)的DDY理想的切割深度須切入膠膜(Tape)1/3厚度。P11Sawblade對(duì)製程的影響分析:P1140

切割刀的影響

DiamondGritSize(鑽石顆粒大小)

GRITSIZE

+-

TopSideChipping+-

BladeLoading+-

BladeLife+-

FeedRate+-分析:小顆粒之鑽石1.切割品質(zhì)較好。2.切割速度不宜太快。3.刀子磨耗較大。大顆粒之鑽石1.刀子磨耗量小。2.切割速度可較快。3.負(fù)載電流較小。P15切割刀的影響GRITSIZE+-41TAPE粘度對(duì)SAW製程的影響

MountingTape(膠膜黏力)

TAPEADHESION

+-

CutQuality+-

FlyingDie+-分析:使用較黏膠膜可獲得1.沒有飛Die。2.較好的切割品質(zhì)。潛在風(fēng)險(xiǎn)

DieAttachprocesspickupdie

影響。

Cost+-

DieEjection+-P10TAPE粘度對(duì)SAW製程的影響TAPEADH42晶圓切割(Dicing)4.Dicing輔助設(shè)備ACO2Bubbler二氧化碳發(fā)泡機(jī)BDIWater電阻率監(jiān)測(cè)儀CDiamaflow發(fā)生器DUV照射機(jī)晶圓切割(Dicing)4.Dicing輔助43上片

(DieBond)1.DieBond

設(shè)備介紹AESEC2007/2008系列BALPHASEM8002/9002系列CASM829/889/898系列上片(DieBond)1.DieBond設(shè)備介紹44半導(dǎo)體封裝制程與設(shè)備材料知識(shí)介紹ppt課件45半導(dǎo)體封裝制程與設(shè)備材料知識(shí)介紹ppt課件46上片

(DieBond)2.DieBond

相關(guān)工藝X,YPLACEMENT;BLT;TILT;ROTATIONTHETA;CPKDIEROTATIONTHETAPLACEMENTACCURACYX,Y(CP)BONDLINETHICKNESS(CPK)EXPOYTHICKNESSTILT(CPK)VOID、DIESHARE上片(DieBond)2.DieBond相關(guān)工藝X,47上片

(DieBond)3.DieBond

相關(guān)材料ALeadframeBSubstrateCEpoxy銀漿DWaferafterSawEMagazine彈夾上片(DieBond)3.DieBond相關(guān)材料48Substrate

BasicStructure:CoreAuNiCuSolderMaskBondFingerViaHoleBallPadSubstrate BasicStructure:C49BasicInformationCore： 玻璃纖維+樹脂，0.1-0.4mm鍍銅層： 25um+/-5um鍍鎳層： 5.0-12.5um鍍金層： 0.50-1.10umSolderMask：25um+/-5um總厚度： 0.21-0.56mmSubstrateDrawing厚度：0.22+/-0.06mmMCEL建議Vendor提供的Substrate厚度：0.24+/-0.04mmBasicInformationCore： 玻璃纖維+樹脂50發(fā)料烘烤線路形成(內(nèi)層)AOI自動(dòng)光學(xué)檢測(cè)壓合4layer2layer蝕薄銅綠漆線路形成塞孔鍍銅Deburr鑽孔鍍Ni/Au包裝終檢O/S電測(cè)成型AOI自動(dòng)光學(xué)檢測(cè)出貨BGA基板製造流程(option)發(fā)料烘烤線路形成(內(nèi)層)AOI自動(dòng)光學(xué)檢測(cè)壓合4layer51上片

(DieBond)4.DieBond

輔助設(shè)備A銀漿攪拌機(jī)

利用公轉(zhuǎn)自轉(zhuǎn)離心力原理脫泡及混合；主要參數(shù)有：MIXING/DEFORMINGREVOLUTIONSPEED

外加計(jì)時(shí)器；公轉(zhuǎn)用于去泡；自轉(zhuǎn)用于混合；上片(DieBond)4.DieBond輔助設(shè)備52BCuringOven無氧化烤箱主要控制要素：N2流量；排氣量；profile溫度曲線；每箱擺放Magazine數(shù)量；BCuringOven無氧化烤箱53CWafermapping應(yīng)用CWafermapping應(yīng)用54焊線(WireBond)1.WireBond

相關(guān)工藝

PadOpen&BondPadPitchBallSizeBallThicknessLoopheightWirePullBallshortCraterTest焊線(WireBond)1.WireBond相關(guān)工藝55padleadFreeairballiscaptured

inthechamferpadleadFreeairballiscaptur56Freeairballiscaptured

inthechamferpadleadFreeairballiscaptured

in57Freeairballiscaptured

inthechamferpadleadFreeairballiscaptured

in58Freeairballiscaptured

inthechamferpadleadFreeairballiscaptured

in59Freeairballiscaptured

inthechamferpadleadFreeairballiscaptured

in60FormationofafirstbondpadleadFormationofafirstbondpadle61FormationofafirstbondpadleadFormationofafirstbondpadle62FormationofafirstbondpadleadheatPRESSUREUltraSonicVibrationFormationofafirstbondpadle63FormationofafirstbondpadleadUltraSonicVibrationheatPRESSUREFormationofafirstbondpadle64Capillaryrisestoloop

heightpositionpadleadCapillaryrisestoloop

heigh65Capillaryrisestoloop

heightpositionpadleadCapillaryrisestoloop

heigh66Capillaryrisestoloop

heightpositionpadleadCapillaryrisestoloop

heigh67Capillaryrisestoloop

heightpositionpadleadCapillaryrisestoloop

heigh68Capillaryrisestoloop

heightpositionpadleadCapillaryrisestoloop

heigh69FormationofalooppadleadFormationofalooppadlead70FormationofalooppadleadFormationofalooppadlead71padleadpadlead72padleadpadlead73padleadpadlead74padleadpadlead75padleadpadlead76padleadpadlead77padleadpadlead78padleadpadlead79padleadpadlead80padleadpadlead81padleadpadlead82padleadpadlead83padleadpadlead84padleadpadlead85padleadpadlead86padleadpadlead87FormationofasecondbondpadleadheatFormationofasecondbondpadl88FormationofasecondbondpadleadheatheatFormationofasecondbondpadl89padleadheatheatpadleadheatheat90padleadheatheatpadleadheatheat91padleadpadlead92padleadpadlead93padleadpadlead94padleadpadlead95padleadpadlead96padleadpadlead97padleadDisconnectionofthetailpadleadDisconnectionoftheta98padleadDisconnectionofthetailpadleadDisconnectionofthet99padleadFormationofanewfreeairballpadleadFormationofanewfree100焊線(WireBond)2.WireBond

相關(guān)材料LeadframCapillaryGoldWire

焊線(WireBond)2.WireBond相關(guān)材料101LeadframLeadfram102CapillaryCapillaryManufacturer(SPT,GAISER,PECO,TOTO…)CapillaryData(Tip,Hole,CD,FA&OR,IC)CapillaryCapillaryManufactu103HowToDesignYourCapillaryTIP..……PadPitchPadpitchx1.3=TIPHole..…..WireDiameterWirediameter+0.3~0.5=HCD………Padsize/open/1stBallCD+0.4~0.6=1stBondBallsizeFA&OR….Padpitch(um)FA >100 0,4 ~90/100 4,8,11<90 11,15 ICtype……looptypeCapillaryHowToDesignYourCapillaryTI104GoldWire

GoldWireManufacturer (Nippon,SUMTOMO,TANAKA….)GoldWireData (WireDiameter,Type,EL,TS)GoldWireGoldWireManufactur105焊線(WireBond)3.WireBond

輔助設(shè)備AMicroscope用于測(cè)loopheightBWirePull拉力計(jì)（DAGE4000）CBallShear球剪切力計(jì)DPlasma微波/等離子清洗計(jì)焊線(WireBond)3.WireBond輔助設(shè)備106BallSizeBallThickness

單位:um，Mil

量測(cè)倍率:50X

BallThickness計(jì)算公式

60umBPP≧1/2WD=50%60umBPP≦1/2WD=40%~50%BallSizeBallSize&BallThicknessBallSizeBallThickness單位:um107LoopHeight

單位:um，Mil

量測(cè)倍率:20XLoopHeight

線長(zhǎng)LoopHeight單位:um，MilLoopHei108WirePull1LiftedBond(Rejected)2Breakatneck(Referwire-pullspec)3Breakatwire(Referwire-pullspec)4Breakatstitch(Referstitch-pullspec)5Liftedweld(Rejected)WirePull1LiftedBond(Rejec109BallShear

單位:gramorg/mil2BallShear計(jì)算公式

Intermetallic（IMC有75%的共晶,ShearStrength標(biāo)準(zhǔn)為＞6.0g/mil2。SHEARSTRENGTH＝BallShear/Area(g/mil2)BallShear=x;BallSize=y;Area=π(y/2)2 x/π(y/2)2=zg/mil2BallShear單位:gramorg/mil2110PlasmaCleaning的原理：Plasma的產(chǎn)生：

電極(電能)

Plasma

氣 體 (O2,H2,He,Ar..)PlasmaCleanin