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IZO-basedthinfilmtransistorswithPMMAdielectriclayersOutlineIntroduction1Structureandpreparation2Resultsanddiscussion3Conclusion4OxidethinfilmtransistorTFTswithmetal(In,Zn,Sn,Ga)oxidechannelshighmobility(vs.a-SiTFT)&hightransparencyIn-Ga-Zn-OTFTpreparedatroomtemperaturereportedTFTswithindiumzincoxide(IZO)channels–tobeinvestigatedIntroduction

OxidethinfilmtransistorThinfilmtransistors(TFTs)arewidelyusedinthefieldofdisplayandmemory.-traditionalrepresentativesa-SiTFTlowmobility,lightsensitive,opaquep-SiTFTcomplexandhigh-temperatureprocesstransparent,flexible

PMMAdielectric/IZOchannelhybridstructure–inorganicchannel/organicdielectrictocombinebothadvantagestransparentchanneldepositedatRTwithhighmobilitydielectriclayerpreparedbysolutionprocessingwithpotentialapplicationofrolltorollproductionIntroduction

dielectriclayeraffectmobility,Vth,on/offcurrentratioofTFTsinorganicdielectricse.g.SiO2,SiNx,Y2O3,Ta2O5-highprocessingtemperatureorexpensivematerial/equipmentPoly(methylmethacrylate)(PMMA)-highresistance,properdielectricconstant,outstandingchemico-physicalproperties,mechanicalflexibility,lightweight,simplesolutionprocessing

StructurePreparationIZOAlS/DPMMAAlGateIZOAlS/DPMMAAlGatetopview

StructurePreparation

Preparationthermalevaporationdipcoating,curedat80~90℃thermalevaporationdcsputteringfromIn/Zn(Zn:49.27wt%)metaltargetgateinsulatorsource/drainchannelsubstratetop-gateTFT

ExperimentalResultsMorphologysurfacesaresmooth,contributivetothereductionofleakagecurrent

OpticalPropertiesIZOchannelTavg=80.4%(400~700nm)PMMA/IZO

Tavg=86.5%(400~700nm)potentialapplicationinthefabricationoftransparentdevicesExperimentalResultsExperimentalResultsElectricalpropertiesCVtestsofPMMAfilmthickness330nmtestarea2.85cm2dielectricconstant3.49(1kHz)3.29(10kHz)2.09(100kHz)ElectricalpropertiesIZO-TFTtransfercurvesμsat=7.67cm2V-1s?1Vth=

-14.59Von/offratio>2.4×102(a)ExperimentalResultsFig.(a)ID-VGtransferand(b)ID-VDoutputcurvesoftheIZO-TFTwithL

=100μmandW

=500μmElectricalpropertiesOutputcurvesofIZO-TFTExperimentalparameters

oxygen5.0×102Pasputteringtime12mindielectriclayerthickness~300nmExperimentalResults(b)Electricalproperties

μsat=2.0cm2V-1s?1,on/offcurrentratio>2.6×104,Vth=

-2.77V

oxygenpartialpressureof5.0×102Pa,sputteringtimeof8min,PMMAlayerthicknessof360nmExperimentalResultsExperimentalResultsoxygenpartialpressure

-duringthepreparationofIZOchannellayer(dcsputtering)*sputteringtime(4~16min),current(100mA),voltage(330~350V)thicknessofdielectriclayer(150~580nm)ExperimentalResultschannelthicknessdielectriclayerthickness*datafromsamplesofrelevanton/offcurrentratioIZO-basedTFTswithPMMAdielectriclayerswerefabricated.Theprocessingtemperatureallalongisbelow90℃.PMMAdielectriclayeronchannellayerissmoothwithanaveragetransmittanceofover85%inthevisibleregion.TheIZO-basedTFTexhibitsasaturationmobilityofover7cm2V-1s-1.Theoptimum

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