先進芯片封裝知識介紹業(yè)界相關

OutlinePackageDevelopmentTrend3DPackageWLCSP&FlipChipPackage1優(yōu)選課程PackageDevelopmentTrend2優(yōu)選課程SOFamilyQFPFamilyBGAFamilyPackageDevelopmentTrend3優(yōu)選課程CSPFamilyMemoryCardSiPModulePackageDevelopmentTrend4優(yōu)選課程3DPackage3DPackage3DPackageIntroductionetCSPStackFunctionalIntegrationHighLowTape-SCSP(orLGA)S-CSP(orLGA)S-PBGAS-M2CSPStacked-SiP2ChipStackWirebond2ChipStackFlipChip&WirebondMultiChipStackPackageonPackage(PoP)StackingSS-SCSP(film)FS-BGA3S-PBGAS-SBGAS-TSOP/S-QFP

3S-CSPS-etCSPetCSP+S-CSP

PS-fcCSP+SCSP

PoPwithinterposerFS-CSP2FS-CSP1PaperThinPS-vfBGA+SCSPPiP

5SCSPSS-SCSP(paste)UltrathinStackD2D3D4D2D2D3D4D2

PoPQFN4SS-SCSPStackedDieTopdieBottomdieFOWmaterilWireTSVTSV(ThroughSiliconVia) Athrough-siliconvia(TSV)isaverticalelectricalconnection(via)passingcompletelythroughasiliconwaferordie.TSVtechnologyisimportantincreating3Dpackagesand3Dintegratedcircuits.

A3Dpackage(SysteminPackage,ChipStackMCM,etc.)containstwoormorechips(integratedcircuits)stackedverticallysothattheyoccupylessspace. Inmost3Dpackages,thestackedchipsarewiredtogetheralongtheiredges.Thisedgewiringslightlyincreasesthelengthandwidthofthepackageandusuallyrequiresanextra“interposer”layerbetweenthechips. Insomenew3Dpackages,through-siliconviareplaceedgewiringbycreatingverticalconnectionsthroughthebodyofthechips.Theresultingpackagehasnoaddedlengthorthickness.WireBondingStackedDieTSVWhat’sPoP?PoPisPackageonPackageTopandbottompackagesaretestedseparatelybydevicemanufacturerorsubcon.

PoPPoPPS-vfBGAPS-etCSPLowLoopWirePinGateMoldPackageStackingWaferThinningPoPCoreTechnologyPoPAllowsforwarpagereductionbyutilizingfully-moldedstructureMorecompatiblewithsubstratethicknessreductionProvidesfinepitchtoppackageinterfacewiththrumoldviaImprovedboardlevelreliabilityLargerdiesize/packagesizeratioCompatiblewithflipchip,wirebond,orstackeddieconfigurationsCosteffectivecomparedtoalternativenextgenerationsolutionsAmkor’sTMV?PoPTopviewBottomviewThroughMoldViaPoP

BallPlacementontopsurfaceBallPlacementonbottomDieBondMold(UnderFulloptional)LaserdrillingSingulation

FinalVisualInspectionBaseM’tlThermaleffectProcessFlowofTMVPoPDigital(Btmdie)+Analog(Middledie)+Memory(Toppkg)PotableDigitalGadgetCellularPhone,DigitalStillCamera,PotableGameUnitMemorydieAnalogdieDigitaldiespacerEpoxyPiP13優(yōu)選課程EasysystemintegrationFlexiblememoryconfiguration100%memoryKGDThinnerpackagethanPOPHighIOinterconnectionthanPOPSmallfootprintinCSPformatIthasstandardballsizeandpitchConstructedwith:FilmAdhesivedieattachEpoxypasteforTopPKGAuwirebondingforinterconnectionMoldencapsulationWhyPiP?

PiP14優(yōu)選課程MaterialforHighReliabilityBasedonLowWarpageWaferThinningFineProcessControlTopPackageAttachDieAttachetcOptimizedPackageDesignFlipChipUnder-fillTopepoxyISMPiPCoreTechnology

PiP15優(yōu)選課程MemoryPKGSubstrateFlipchipMemoryPKGFlipchipInnerPKGAnalogAnalogSpacerDigitalInnerPKGWBPIPFCPIPPiPPiP–W/BPiPandFCPiP

16優(yōu)選課程WLCSP&FlipChipPackageWLCSPWhatisWLCSP? WLCSP(WaferLevelChipScalePackaging),isnotsameastraditionalpackagingmethod(dicingpackagingtesting,packagesizeisatleast20%increasedcomparedtodiesize). WLCSPispackagingandtestingonwaferbase,anddicinglater.Sothepackagesizeisexactlysameasbarediesize.

WLCSPcanmakeultrasmallpackagesize,andhighelectricalperformancebecauseoftheshortinterconnection.18優(yōu)選課程WLCSPWhyWLCSP?Smallestpackagesize:WLCSPhavethesmallestpackagesizeagainstdiesize.Soithaswidelyuseinmobiledevices.Highelectricalperformance:becauseoftheshortandthicktraceroutinginRDL,itgiveshighSIandreducedIRdrop.Highthermalperformance:sincethereisnoplasticorceramicmoldingcap,heatfromdiecaneasilyspreadout.Lowcost:noneedsubstrate,onlyonetimetesting.WLCSP’sdisadvantageBecauseofthediesizeandpinpitchlimitation,IOquantityislimited(usuallylessthan50pins).BecauseoftheRDL,staggerIOisnotallowedforWLCSP.19優(yōu)選課程RDLRDL:RedistributionLayerAredistributionlayer(RDL)isasetoftracesbuiltuponawafer’sactivesurfacetore-routethebondpads.

Thisisdonetoincreasethespacingbetweeneachinterconnection(bump).WLCSPProcessFlowofWLCSP21優(yōu)選課程WLCSPProcessFlowofWLCSP22優(yōu)選課程FlipChipPackageFCBGA(PassiveIntegratedFlipChipBGA)(PI)-EHS-FCBGA(PassiveIntegratedExposedHeatSinkFlipChipBGA)(PI)-EHS2-FCBGA(PassiveIntegratedExposed2piecesofHeatSinkFlipChipBGA)MCM-FCBGA(Multi-Chip-ModuleFCBGA)PI-EHS-MP-FCBGA(PassiveIntegratedExposedHeatSinkMultiPackageFlipChip)23優(yōu)選課程Bump24優(yōu)選課程BumpDevelopmentBumpDevelopmentBumpDevelopmentC4FlipChipWhat’sC4FlipChip?C4is:ControlledCollapsedChipConnectionChipisconnectedtosubstratebyRDLandBumpBumpmaterialtype:solder,goldC4FlipChipBGAMainFeaturesBallPitch:0.4mm-1.27mmPackagesize:upto55mmx55mmSubstratelayer:4-16LayersBallCou