GB/T 44839-2024微機(jī)電系統(tǒng)（MEMS）技術(shù)MEMS材料微柱壓縮試驗(yàn)方法

ICS

31.080.99

CCS

L59

中華人民共和國(guó)國(guó)家標(biāo)準(zhǔn)

GB/T44839—2024/IEC62047?10:2011

微機(jī)電系統(tǒng)（MEMS）技術(shù)

MEMS材料微柱壓縮試驗(yàn)方法

Micro-electromechanicalsystems（MEMS）

technology—

Micro-pillarcompressiontestforMEMSmaterials

（IEC62047-10:2011,Semiconductordevices—Micro-electromechanical

devices—Part10:Micro-pillarcompressiontestforMEMSmaterials,IDT）

2024-10-26發(fā)布2025-02-01實(shí)施

國(guó)家市場(chǎng)監(jiān)督管理總局發(fā)布

國(guó)家標(biāo)準(zhǔn)化管理委員會(huì)

GB/T44839—2024/IEC62047?10:2011

目次

前言

·····································································································

Ⅲ

1

范圍

··································································································

1

2

規(guī)范性引用文件

······················································································

1

3

術(shù)語(yǔ)和定義

···························································································

1

4

符號(hào)和名稱

···························································································

1

5

試件

··································································································

2

5.1

總體要求

·························································································

2

5.2

試件形狀

·························································································

2

5.3

尺寸測(cè)量

·························································································

3

6

試驗(yàn)方法和測(cè)試儀器

·················································································

3

6.1

測(cè)試原理

·························································································

3

6.2

試驗(yàn)儀器

·························································································

4

6.3

測(cè)試步驟

·························································································

4

6.4

試驗(yàn)環(huán)境

·························································································

5

7

測(cè)試報(bào)告

······························································································

5

附錄A（資料性）

利用有限元法進(jìn)行誤差估計(jì)

·······················································

6

A.1

誤差來(lái)源

························································································

6

A.2

有限元模型

······················································································

6

A.3

分析結(jié)果

························································································

6

參考文獻(xiàn)

··································································································

7

Ⅰ

GB/T44839—2024/IEC62047?10:2011

前言

本文件按照GB/T1.1—2020《標(biāo)準(zhǔn)化工作導(dǎo)則第1部分：標(biāo)準(zhǔn)化文件的結(jié)構(gòu)和起草規(guī)則》的規(guī)

定起草。

本文件等同采用IEC62047?10:2011《半導(dǎo)體器件微機(jī)電器件第10部分：MEMS材料微柱壓

縮試驗(yàn)方法》。

本文件增加了“術(shù)語(yǔ)和定義”一章。

本文件做了下列最小限度的編輯性改動(dòng)：

—為與現(xiàn)有標(biāo)準(zhǔn)協(xié)調(diào)，將標(biāo)準(zhǔn)名稱改為《微機(jī)電系統(tǒng)（MEMS）技術(shù)MEMS材料微柱壓縮試

驗(yàn)方法》；

—納入了IEC62047?10:2011/COR1:2012的勘誤內(nèi)容，所涉及的條款的外側(cè)頁(yè)邊空白位置用垂直雙

線（||）進(jìn)行了標(biāo)示；

—5.2增加了注；

—更正了6.3c）應(yīng)變速率數(shù)值，根據(jù)參考文獻(xiàn)，數(shù)值更正為“5×10-3/min”。

請(qǐng)注意本文件的某些內(nèi)容可能涉及專利。本文件的發(fā)布機(jī)構(gòu)不承擔(dān)識(shí)別專利的責(zé)任。

本文件由全國(guó)微機(jī)電技術(shù)標(biāo)準(zhǔn)化技術(shù)委員會(huì)（SAC/TC336）提出并歸口。

本文件起草單位：中國(guó)科學(xué)院微電子研究所、中機(jī)生產(chǎn)力促進(jìn)中心有限公司、蘇州容啟傳感器科技

有限公司、武漢大學(xué)、北京大學(xué)、上海交通大學(xué)、昆山昆博智能感知產(chǎn)業(yè)技術(shù)研究院有限公司、蘇州晶

方半導(dǎo)體科技股份有限公司、東南大學(xué)、蘇州慧聞納米科技有限公司、中關(guān)村光電產(chǎn)業(yè)協(xié)會(huì)、中國(guó)電子

產(chǎn)品可靠性與環(huán)境試驗(yàn)研究所、昆山雙橋傳感器測(cè)控技術(shù)有限公司、芯聯(lián)集成電路制造股份有限公司、

深圳市道格特科技有限公司。

本文件主要起草人：周維虎、李根梓、孫宏霖、劉勝、霍樹(shù)春、高成臣、劉景全、陳立國(guó)、

楊劍宏、陳志文、焦斌斌、黃慶安、聶萌、張平平、陳曉梅、盧永紅、陳思、王冰、謝紅梅、劉志廣。

Ⅲ

GB/T44839—2024/IEC62047?10:2011

微機(jī)電系統(tǒng)（MEMS）技術(shù)

MEMS材料微柱壓縮試驗(yàn)方法

1范圍

本文件描述了微柱壓縮試驗(yàn)方法，用于MEMS材料壓縮特性的高精度、高重復(fù)性測(cè)量，且試樣制造

難度適中；測(cè)量試樣單向壓縮應(yīng)力?應(yīng)變的關(guān)系，得到試樣壓縮彈性模量和屈服強(qiáng)度。

試樣是通過(guò)微加工技術(shù)在剛性（或高剛度）基體上制造的圓柱，其高徑比（高度與直徑的比值）大

于3為宜。本文件適用于金屬、陶瓷、高分子等材料制備的高度小于100μm微柱的測(cè)試。

2規(guī)范性引用文件

下列文件中的內(nèi)容通過(guò)文中的規(guī)范性引用而構(gòu)成本文件必不可少的條款。其中，注日期的引用文

件，僅該日期對(duì)應(yīng)的版本適用于本文件；不注日期的引用文件，其最新版本（包括所有的修改單）適用

于本文件。

IEC62047?8半導(dǎo)體器件微機(jī)電器件第8部分：薄膜拉伸性能測(cè)量用帶材彎曲試驗(yàn)方法

（Semiconductordevices—Micro?electromechanicaldevices—Part8:Stripbendingtestmethodfor

tensilepro