英文翻譯及文獻(xiàn)_電子電子_功率半導(dǎo)體.doc

New Generation of High Power Semiconductor Closing Switches for Pulsed Power ApplicationsI. Introduction Solid state semiconductor switches are very inviting to use at pulsed power systems because these switches have high reliability, long lifetime, low costs during using, and environmental safety due to mercury and lead are absent. Semiconductor switches are able to work in any position, so, it is possible to design systems as for stationary laboratory using, and for mobile using. Therefore these switches are frequently regarded as replacement of gas-discharge devices ignitrons, thyratrons, spark gaps and vacuum switches that generally use now in high-power electrophysical systems including power lasers.Traditional thyristors (SCR) are semiconductor switches mostly using for pulse devices. SCR has small value of forward voltage drop at switch-on state, it has high overload capacity for current, and at last it has relatively low cost value due to the simple bipolar technology. Disadvantage of SCR is observed at switching of current pulses with very high peak value and short duration. Reason of this disadvantage is sufficiently slow process of switch-on state expansion from triggering electrode to external border of p-n junction after triggering pulse applying. This SCR feature is defined SCR using into millisecond range of current switching. Improvement of SCR pulse characteristics can be reached by using of the distributed gate design. This is allowed to decrease the time of total switch-on and greatly improve SCR switching capacity. Thus, ABB company is expanded the semiconductor switch using up to microsecond range by design of special pulse asymmetric thyristors (ASCR). These devices have distributing gate structure like a GTO. This thyristor design and forced triggering mode are obtained the high switching capacity of thyristor (=150kA, =50s, di/dt = 18kA/s, single pulse). However, in this design gate structure is covered large active area of thyristor (more than 50%) that decrease the efficiency of Si using and increase cost of device.Si-thyristors and IGBT have demonstrated high switching characteristics at repetitive mode. However, such devices do not intend for switching of high pulse currents (tens of kiloamperes and more) because of well-known physical limits are existed such as low doping of emitters, short lifetime of minority carriers, small sizes of chips etc.Our investigation have obtained that switches based on reverse switched dinistors are more perspective solid-state switches to switch super high powers at microsecond and submillisecond ranges. Reverse switched dinistors (RSD) is two-electrode analogue of reverse conducting thyristor with monolithical integrated freewheeling diode in Si. This diode is connected in parallel and in the back direction to the thyristor part of RSD. Triggering of RSD is provided by short pulse of trigger current at brief applying of reversal voltage to RSD. Design of RSD is made thus that triggering current passes through diode areas of RSD quasiaxially and uniformly along the Si structure area. This current produces the oncoming injection of charge carriers from both emitter junctions to base regions and initiates the regenerative process of switch-on for RSD thyristor areas. Such method of triggering for this special design of Si plate is provided total and uniform switching of RSD along all active area in the very short time like as diode switch-on. The freewheeling diode integrated into the RSD structure could be used as damping diode at fault mode in the discharge circuit. This fault mode such as breakdown of cable lines can lead to oscillating current through switch.It has been experimentally obtained in that semiconductor switches based on RSD can work successfully in the pulsed power systems to drive flash lamps pumping high-power neodymium lasers. It was shown in that RSD-switches based on RSD wafer diameter of 63 mm (switch type KRD-25-100) and RSD-switches based on RSD wafer diameter of 76 mm (switch type KRD-25-180) can switch the current pulses with submillisecond duration and peak value of 120 kA and 180 kA respectively. Three switches (switch type KRD 25-180) connected in parallel were successfully tested under the following mode: operating voltage = 25 kV, operating current Ip = 470 kA, and transferred charge Q = 145 Coulombs.During 2000 2001, the capacitor bank for neodymium laser of facility LUCH was built at RFNC-VNIIEF. This bank including 18 switches type KRD-25-100 operates successfully during 5 years without any failures of switches.This report is submitted results of development of new generation of solid state switches having low losses of power and high-current switching capacity.II. Development of RSDs next generation The technology of fabrication of new RSD structure has been developed to increase the switching capacity. This new structure is SPT (Soft Punch Through)-structure - with “soft” closing of space-charge region into buffer n-layer.Decreasing of n-base thickness and also improving of RSD switch-on uniformity by good spreading of charge carriers on the n-layer at voltage inversion are provided decreasing of all components of losses energy such as losses at triggering, losses at transient process of switch-on, and losses at state-on. Our preliminary estimation was shown that such structure must provide the increasing of operating peak current through RSD approximately in 1.5 times.Investigations were carried out for RSD with blocking voltage of 2.4 kV and Si waferdiameters of 63, 76, and 100 mm by special test station. The main goal of these investigations is definition of maximum permissible level of peak current passing through single RSD with given area. Current passing through RSD and voltage drop on RSD structure during current passing are measured at testing. In Fig.1 waveforms of peak currents and voltage drops is shown for RSD with size of 76 mm and blocking voltage of 2.4 kV.Fig.1. Waveforms of pulse current (a) and voltage drop (b) for RSD with wafer size of 76 mm and blocking voltage of 2.4 kVIn according with study program current was slowly increased until maximum permissible level Ipm. When this level was reached the sharp rise of voltage and than the same sharp decay of voltage for curve U(t) was observed. Reason of voltage rise is strong decreasing of carrier mobility at high temperature, and reason of voltage decay is quick modulation of channel conductivity by thermal generated plasma that is appeared in accordance with sharp exponential dependence for own concentration of initial silicon into base areas of RSD at temperature of 400 C.Tests were shown that this sharp rise of voltage at maximum permissible current does not lead to immediate fault of RSD. RSD keeps its blocking characteristic. However, after passing of such current we can observe the appearance of erosion from cathode for aluminum metallization of RSD contacts, and this fact is evidence of borderline state of device. The subsequent increasing of current (more than ) leads to fusing of Si structure. Therefore, level Ipm is the reference position to define the value of operation peak current for RSD-switch under long and repeated many times operating mode. We have determined that operating peak current must be less than 80% from level . This ratio was confirmed by calculations and results of tests under mode (several thousands of shots). Data of test results for new generation of RSD with the various diameter of Si wafer are shown in Table 1. In this Table for comparing results of the same tests for the first generation of RSD with size of 63 and 76 mm are shown. III. Switches based on RSD of new generation New reverse switched dinistors is manufactured in two variants. RSD of the first variant is in the low-profile metal-ceramic housing. The second variant is RSD fabricated without housing and with additional protection of periphery area from external action.Dinistors placed into housing can be used for work under as mono - pulse mode and repeated - pulse mode. If repeated-pulsed mode using the forced cooling of semiconductor devices and using of heatsinks to both side of pellet must be made. Dinistors without housing connects in series, and such assembly could be placed into a single compact housing. However, such assembly can work under mono-pulse mode only.Operating voltage for switch typically exceeds blocking voltage of single RSD (2400V), thus switch is included several RSDs connected in series. Fig.2. Reverse switched dinistors for peak current from 200 kA to 500 kA and blocking voltage of 2400 V, encapsullated in hermetic metal ceramic housing and without housing (RSD sizes of 64, 76, and 100 mm).Number of RSDs included in assembly depends on operating voltage of switch. Therefore, technical problem of switch development is mainly optimization of design for assembly of several dinistors connected in series. A lot of special investigations have carried out such as choice of optimum materials to provide best contacts between RSDs, calculation of dynamic forces to clamp assembly, etc. These investigations are provided small and stable transition electrical and thermal resistances between RSDs that guarantees long and reliable performance of switch. Especial computer technique has developed to select RSDs for connection in series. At this RSD selection value of leakage current and stability of blocking volt-amps diagram are measured especially. This selection technique is allowed exclude the voltage dividers using for equalization of static voltage for each RSD at assembly. Thus, after such selection switch design can simplify, sizes of switch are increased approximately in 1.5 times, and cost of switch is increased too.This solid state switch has operating voltage of up to 25 kVdc, operating peak current of up to 300 kA at current pulse duration of up to 500 s. RFNC-VNIIEF plans to use such switch at capacitor bank of laser facility “Iskra-6”. This switch is included 15 RSDs with size of 76 mm and blocking voltage of 2.4 kV connected in series and encapsullated into dielectric housing. Very high level of switched power density per volume unit has reached by this switch design. This value is of 2.5 W/, and this value is exceeded in the several times the same switches based on pulse thyristors.Triggering of all RSDs in switch is provided by the single trigger generator which connected to switch in parallel. Triggering current passes simultaneously through all RSDs connected in series. Such triggering type is allowed to increase efficiency and reliability of triggering circuit for this switch, and this is one more advantage of RSD switch compared to switch based on thyristors.For new generation of RSD trigger current has peak value between 1-1.5 kA at pulse duration between 1.5 2 s. These values are less in 2-3 times compared to values of trigger current for RSD of the first generation.IV. Conclusion Next generation of reverse-switched dinistors and RSD switches has been developed Tests of these switches are shown that all time high level of switched power density per volume unit has reached. The switches are able to work under as mono-pulse and pulse-repeated modes and suitable for many applications of pulsed power.應(yīng)用于脈沖電源設(shè)備的新一代高功率半導(dǎo)體關(guān)閉開關(guān)一 導(dǎo)言 Solid state semiconductor switches are very固態(tài)半導(dǎo)體開關(guān)普遍使用在脈沖功率系統(tǒng)，因?yàn)閠hese switches have high reliability, long lifetime,這些開關(guān)具有可靠性高，壽命長， low costs during using, and environmental safety使用成本低，并且due to mercury and lead are absent.由于汞和鉛的量少能夠保證環(huán)境的安全。Semiconductor半導(dǎo)體switches are able to work in any position, so, it is開關(guān)可以在任何位置工作，所以，它可以possible to design systems as for stationary在固定的laboratory using, and for mobile using.實(shí)驗(yàn)室使用，并可以為移動(dòng)設(shè)備設(shè)計(jì)系統(tǒng)。Therefore因此these switches are frequently regarded as這些開關(guān)被頻繁的看作是可以替代replacement of gas-discharge devices ignitrons,氣體放電裝置、放電管、thyratrons, spark gaps and vacuum switches that閘流管，火花隙縫隙和現(xiàn)在普遍使用的高能量電板systems including power lasers.系統(tǒng)包括功率激光器的真空開關(guān)generally use now in high-power electrophysical。Traditional傳統(tǒng)的thyristors晶閘管(SCR)（()da are()是semiconductor switches mostly using for pulse大多應(yīng)用在脈沖devices.設(shè)備的半導(dǎo)體開關(guān)。它在早前的SCR has small value of forward voltage正向電壓drop at switch-on state, it has high overload下拉開關(guān)的狀態(tài)有小的價(jià)值，它對(duì)電流具有超負(fù)荷的能力，最后它由于簡單的兩極技術(shù)它擁有相對(duì)較低的cost value due to the simple bipolar technology.成本價(jià)值。Disadvantage of SCR is observed at switching of它的缺點(diǎn)是高峰值的current pulses with very high peak value and short電流脈沖和duration.較短的持續(xù)時(shí)間。導(dǎo)致這種缺點(diǎn)的原因是在觸發(fā)脈沖設(shè)置后從觸發(fā)電極到到外部連接進(jìn)程十分緩慢triggering electrode to external border of pn。This SCR。它的這種特征使得它應(yīng)用在現(xiàn)時(shí)配電的毫秒范圍內(nèi)。改進(jìn)晶閘管脈沖的特點(diǎn)可以通過改進(jìn)分布式門設(shè)計(jì)達(dá)到效果。這就允許減少這就允許這the time of total switch-on and greatly improve總的接通時(shí)間和極大提高配電的能力。Thus, ABB company isThus, ABB company is因此，ABB公司擴(kuò)大半導(dǎo)體開關(guān)的使用一直到對(duì)特別脈沖的不均勻asymmetric thyristors (ASCR) 1.晶閘管的微秒范圍的設(shè)計(jì)。這些裝置分布閘門的結(jié)構(gòu)類似于GTOGTO。This這個(gè)thyristor design and forced triggering mode are晶閘管的設(shè)計(jì)和強(qiáng)迫的觸發(fā)模式obtained the high switching capacity of thyristor獲得晶閘管的高配電能力(I。However, in this design gate structure is covered然而，這個(gè)門的結(jié)構(gòu)覆蓋large active area of thyristor (more than 50%) that了晶閘管的大活動(dòng)面積decrease the efficiency of Si using and increase cost，從而降低了硅利用的效率并增加了裝置的成本。Si-thyristors and IGBT have demonstrated硅晶閘管和IGBT已經(jīng)證明在重復(fù)模式下的high switching characteristics at repetitive mode高配電特性2,3.。However, such devices do not intend for然而，這樣的設(shè)備因?yàn)楸娝苤奈堇锵拗撇淮蛩愎┙oswitching of high pulse currents (tens of kiloamperes高脈沖電流的配電普遍存在and more) because of well-known physical limits are，如存在使用興奮劑的排放低， of minority carriers, small sizes of chips etc.少數(shù)載流子的載波壽命短，小尺寸的芯片等。Our investigation have obtained that我們的調(diào)查已取得的switches based on reverse switched dinistors 4基于逆向的接通在毫秒和微妙范圍內(nèi)接通顯現(xiàn)為從使用電晶體管轉(zhuǎn)換為接通高能量開關(guān)。Reverse switched dinistors逆向在硅里的綜合的單片電路慣性滑行的二極管逆向的晶閘管conducting thyristor with monolithical integrated的的(RSD) is two-electrode analogue of reverse是兩極類似物。這個(gè)二極管平行的連接，在后方與RSD的晶閘管部分連接。Triggering of RSD is provided by short觸發(fā)RSD為提供短期pulse of trigger current at brief applying of reversal觸發(fā)脈沖電流簡短逆轉(zhuǎn)的應(yīng)用voltage to RSD.電壓區(qū)。RSD的設(shè)計(jì)觸發(fā)電流通過二極管領(lǐng)域的相對(duì)標(biāo)準(zhǔn)偏差quasiaxially and uniformly along the Si structure和均勻沿著硅的area.結(jié)構(gòu)范圍。目前生產(chǎn)的這即將來臨的電荷攜帶者的生產(chǎn)過程從發(fā)射連接到基本區(qū)域和啟動(dòng)再生過程開關(guān)上的RSD為晶閘管地區(qū)。Such method of這種提供RSD開關(guān)的總和或統(tǒng)一的設(shè)置對(duì)于硅的特別設(shè)計(jì)的觸發(fā)方法在非常少的時(shí)間應(yīng)用在所有的活動(dòng)面積類似二極管的接通。The freewheeling diode integrated into該慣性滑行的二極管集成到RSD結(jié)構(gòu)可以作為阻尼二極管在fault mode in the discharge circuit.故障模式的放電電路。這種故障模式such as breakdown of cable lines can lead to如故障的電纜線可能會(huì)導(dǎo)致oscillating current through switch.振蕩電流開關(guān)通過。It has been experimentally obtained in 它已獲得的RSD為基礎(chǔ)的實(shí)驗(yàn)半導(dǎo)體開關(guān)can work successfully in the pulsed power systems可以成功地在脈沖功率系統(tǒng)to drive flash lamps pumping high-power內(nèi)內(nèi)推動(dòng)閃存燈泵浦高功率的neodymium lasers.得得釹激光。結(jié)果表明在該區(qū)域市交換機(jī)基于RSD為晶圓直徑六三毫米和RSD開關(guān)的on RSD wafer diameter of 76 mm (switch type關(guān)于區(qū)晶圓直徑為76毫米可以切換當(dāng)前的脈沖submillisecond duration and peak value of 120 kA持續(xù)時(shí)間和峰值。三個(gè)開關(guān)并聯(lián)successfully tested under the following mode:成功試射以下模式：經(jīng)營電壓= 25 kV, operating current I = 25 kV，經(jīng)營電流= = 470 kA, and transferred charge Q = 145 Coulombs 470 kA，并轉(zhuǎn)移電荷= 145 庫。During 2000 2001, the capacitor bank for 在2000 - 2001年，電容器neodymium laser of facility LUCH was built at釹激光射線的設(shè)施建在RFNC-VNIIEF 7. RFNC - VNIIEF。這種電容器組，包括類型KRD - 25 100的18個(gè)開關(guān)，type KRD-25-100 operates successfully during 5成功地沒有任何失敗的經(jīng)營了5 years without any failures of switches.年開關(guān)。This report is submitted results of 本報(bào)告提交結(jié)果development of new generation of solid state發(fā)展新一代的固態(tài)switches having low losses of power and high-開關(guān)，具有低功耗和損失高current switching capacity.的交換容量。二 Development of RSDs next generationRSDRSD下一代的發(fā)展新的RSD結(jié)構(gòu)的制造技術(shù)The technology of fabrication of new RSD已經(jīng)發(fā)展意境已經(jīng)發(fā)展用于增加開關(guān)的容量。這種新的結(jié)構(gòu)標(biāo)準(zhǔn)貫入試驗(yàn)結(jié)構(gòu)與“軟”閉幕space-charge region into buffer n-layer.空間電荷區(qū)域變成緩沖層。Decreasing of n-base thickness and also通過電壓轉(zhuǎn)變?cè)诰彌_層上的交換載體的良好傳遞，氮基厚度的減少和提高RSD開關(guān)的均勻被提供降低所有損失能量的組成成分，像扳機(jī)的缺損、開關(guān)過程短暫的缺損以及基層的缺損。我們的初步估計(jì)was shown that such structure must provide the結(jié)果表明，這種結(jié)構(gòu)必須通過RSD使運(yùn)轉(zhuǎn)電流的峰值不斷增加increasing of operating peak current through RSD，approximately in 1.5 times.大約在1.5倍以上。Investigations were carried out for RSD調(diào)查進(jìn)行了阻斷電壓為2.4 kV及硅晶片diameters of 63, 76, and 100 mm by special test直徑為63、76 和100毫米的特殊測(cè)試站。這些測(cè)試的主要目標(biāo)是測(cè)定在已給范圍內(nèi)通過單個(gè)RSD的definition of maximum permissible level of peak最大允許水平的高峰current passing through single RSD with given area.電流。在電流通過的瞬間，Current passing through RSD and voltage drop on通過RSD的電流和在RSD結(jié)構(gòu)上的電壓都在測(cè)試中被測(cè)量。在圖一中，電流峰值的波形和電壓的通過用尺寸為76毫米，阻斷電壓為2.4千伏的RSD顯示。直到最大許可等級(jí)為I極，電流研究項(xiàng)目的一致慢慢的增加pm。當(dāng)這個(gè)極達(dá)到，對(duì)電壓的尖銳程度和同一衰減電壓for curve U(t) was observed.曲線U進(jìn)行了觀察。電壓上升的原因是在高溫度情況下的自動(dòng)載體的強(qiáng)大增加is strong decreasing of carrier mobility at high，電壓衰減的原因是通過generated plasma that is appeared in accordance產(chǎn)生的等離子體，據(jù)with sharp exponential dependence for own同時(shí)還存在尖銳的指數(shù)，熱傳導(dǎo)的快速modulation of channel conductivity by thermal調(diào)節(jié)調(diào)節(jié)依賴自己在溫度為400-600度的RSD的基礎(chǔ)領(lǐng)域，concentration of initial silicon into base areas of初始濃度的硅集成度 RSD at temperature of 400 600。 Tests were shown that this sharp rise of試驗(yàn)表明，在最大允許電流上通過的電壓的尖銳程度不會(huì)導(dǎo)致RSD的直接錯(cuò)誤。RSD保持著其blocking characteristic.阻斷特性。However, after passing of然而，在通過這種I極such current I電流之后，我們可以觀察到RSD連接的鋁金屬的負(fù)極被侵蝕的現(xiàn)象we can observe the appearance of，這一事實(shí)是設(shè)備交界層的證明。隨后電流的增加導(dǎo)致硅結(jié)構(gòu)的熔合。Therefore, level I因此，I極是RSD開關(guān)在長期反復(fù)多次經(jīng)營模式下，確定操作峰值電流的相對(duì)標(biāo)準(zhǔn)偏差的參考位置。圖一.尺寸為76毫米和阻斷電壓為2.4千伏的RSD的脈沖電流波形（ a ）和電壓降值（ b ）We have determined that operating peak我們已認(rèn)定， current I電流操作峰值I極必須must be less than 80% from level I小于80%。This ratio was confirmed by calculations and results這一比例也證實(shí)了我在I極模式下的計(jì)算和測(cè)試結(jié)果of tests under Ipw。Data of test results for new generation of。多種直徑的硅金屬促成的新一代的RSD測(cè)試結(jié)果數(shù)據(jù)顯示在圖一shown in Table 1.。在同一測(cè)試中的比較結(jié)果在此表中，第一代的尺寸為63和76毫米的RSD被顯示。三 基于新一代的RSD開關(guān) New reverse switched dinistors is 新的轉(zhuǎn)變晶體管開關(guān)被制造成兩種模式。第一種RSD是variant is in the low-profile metal-ceramic housing.低姿態(tài)的金屬陶瓷機(jī)架。The second variant is RSD fabricated without第二種是RSD不通過機(jī)架制造，而是通過來自外圍區(qū)域的額外的保護(hù)。晶體管Dinistors placed into housing can be used置入可用于在單-脈沖模式和反復(fù)-pulse mode.脈沖模式的機(jī)架下工作。如果重復(fù)使用脈沖模式下forced cooling of semiconductor devices and using強(qiáng)制冷卻的半導(dǎo)體器件，兩邊of