光通信用半導(dǎo)體激光器從外延到芯片

AIXTRONCCS6X2MOCVDMOCVDGasProcessMO&HydrideTMGaTMInTMAlAsH3PH3Si2H6Massflow&pressEpi-MOCVDofLitecoreequippedTMGa、TMIn、TMAl、DEZn、AsH3、PH3andSi2H6GasBoundaryTransportofthereagentsinthegasphasetothesubstrate,e.g.bymeansofacarrierDiffusionofthemoleculesthroughthephaseinterfacegas/boundaryAdsorptiononthesubstrateMigrationofthemoleculestocrystallizationChemicalDesorptionoftheby-productsanddiffusionandconvectionoutfromtheboundaryTransportoftheby-productsoutfromtheHighpreciselyPCcontrolMassflow&presscontrol\Temperaturebalance\On-site

Whenasemiconductorisexcitedbyphotonsofenergyabovethebandgap,electron-holepairscreateinthematerial.Afteratimethesebine,emittingphotonsofthesamewavelength(fordirectbandgapmaterialsonly)andofhigherwavelengths(whensomeenergyisdissipatedasphotons).TestEquipment-

diffracteddX-RayDiffraction(XRD)onthin ysisofcrystals.X-Raysproducedwhenelectricallychargedparticles(e.g.,electrons)ofsufficientkineticenergyaresuddenly

TomeasurecarrierconcentrationbyCVmethods,conditionsmustbesuchthataregiondepletedofcarriersisformed.Forap-typesemiconductor,wherethemajoritycarriersareholes,thisconditionissatisfiedbypositiveionsinsolution,asintheFigure.TestEquipment-Whenanelectronmovesalongadirectionperpendiculartoanappliedmagneticfield,itexperiencesaactingnormaltobothdirectionsandmovesinresponsetothis andthe effectedbytheinternalelectricfield.Holographicgratingisatypeofdiffractiongratingformedbyaninterference-fringefieldoftwolaserbeamswhosestanding-wavepatternisexposedtoapolishedsubstratecoatedwithphotoresist.Processingoftheexposedmediumresultsinapatternofstraightlineswithasinusoidalcrosssection. InP

Optical的應(yīng)用在實際產(chǎn)品生產(chǎn)中，折射率耦合均勻光柵具有相對簡便、成

ReflectivityReflectivity080090010001100120013001400ARAl2O3/SiReflectivityReflectivity080090010001100120013001400LITECLITEC作作配 25℃

項目合作單位 郵電大學(xué)

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術(shù) （b）封裝蝶形器件（c）線 在、光纖格光柵耦合、