IRF540中文數(shù)據(jù)手冊(cè)

1、.IRF540 N溝道MOS管特性Thrench工藝低的導(dǎo)通內(nèi)阻快速開關(guān)低熱敏電阻綜述使用溝渠工藝封裝的N通道增強(qiáng)型場(chǎng)效應(yīng)功率晶體管應(yīng)用：DC到DC轉(zhuǎn)換器開關(guān)電源電視及電腦顯示器電源IRF540中提供的是SOT78(TO220AB)常規(guī)鉛的包裹。IRF540S中提供的是SOT404(D PAK)表面安裝的包裹。管腳管腳描述1Gate2Drain3SourceTabDrain極限值系統(tǒng)絕對(duì)最大值依照限制值符號(hào)參數(shù)條件最小值最大值單位V_DSSV_DGRV_GSI_DI_DMP_DTj，Tsig漏源極電壓漏門極電壓門源極電壓連續(xù)漏電流脈沖漏電流總功耗操作點(diǎn)和存儲(chǔ)溫度Tj= 25 C to 175C

2、Tj = 25 C to 175C; RGS = 20 kTmb = 25 C; VGS = 10 V Tmb = 100 C; VGS = 10 V Tmb = 25 C Tmb = 25 C-5510010020231692100175VVVAAAW雪崩能量極限值符號(hào)參數(shù)條件最小值最大值單位非重復(fù)性雪崩能量最大非重復(fù)性雪崩電流Unclamped inductive load, IAS = 10 A; tp = 350 s; Tj prior to avalanche = 25C;VDD 25 V; RGS = 50 ; VGS = 10 V; refer to fig:14-23023mJ

3、A熱敏電阻符號(hào)參數(shù)條件最小值典型值最大值單位安裝底座交界處的熱阻周圍環(huán)境熱阻SOT78封裝，自由空間SOT404封裝，PCB上-60501.5-K/WK/WK/W電特性25 除非另有說(shuō)明符號(hào)參數(shù)條件最小值典型值最大值單位漏源極崩潰電壓門閥電壓漏源極導(dǎo)通電阻向前跨導(dǎo)門源極泄漏電流0門極電壓漏電流=0V；=0.25mATj = -55C = ; ID = 1 mATj = 175CTj = -55C = 10 V; ID = 17 ATj = 175C=25V; =17A=20 V;=0VVDS = 100 V; VGS = 0 VVDS=80V;VGS=0V;Tj= 175C1008921-8.

4、7-3-4913215.5100.05-4-677193-10010250VVVVVmmSnAuAuA總共門極電荷門源極電荷門漏極電荷ID = 17 AVDD = 80 V; VGS = 10 V-651029nCnCnC開啟延遲時(shí)間開啟上沿時(shí)間關(guān)閉延遲時(shí)間關(guān)閉下沿時(shí)間 = 50 V; = 2.2 ; = 10 V; = 5.6 Resistive load-8392624-nsnsnsns內(nèi)部漏電感內(nèi)部漏電感內(nèi)部源極電感Measured tab to centre of die Measured from drain lead to centre of die (SOT78 package

5、only)Measured from source lead to source bond pad-3.54.57.5-nHnHnH輸入電容輸出電容反饋電容 = 0 V; = 25 V; f = 1 MHz-890139831187167109pFpFpF反向二極管極限值及特性符號(hào)參數(shù)條件最小值典型值最大值單位連續(xù)源極電流脈沖源極電流二極管正向電壓=28A；=0V-0.9423921.5AAV反向恢復(fù)之間反向恢復(fù)命令=17A；=0V;-d/dt=100A/us;=25V-61200-nsnC底座溫度-自然功率降低百分比圖1：自然功率損耗底座溫度-漏電流降低百分比圖2 ：自然持續(xù)漏電流漏源極電壓-脈沖漏極電流峰值圖3 ：安全操作區(qū)域脈寬-瞬態(tài)熱阻抗圖4：瞬態(tài)熱阻抗漏源極電壓-漏極電流圖5：典型輸出特性漏極電流-漏源極導(dǎo)通阻抗圖6：典型導(dǎo)通阻抗圖7：典型傳遞特性圖8