精美模板(很好很實(shí)用)

1、Group MeetingDong-Ming Fang April 18, 2021Work in the last two weeksCompleted 1Read 2Read 3Read 4Downloaded 5Conceiving 6Work in the last two weeks Completed PPT file for oral speechIn EnglishProper ContentsAbout 35 PagesWork in the last two weeks Thesis draft written by Design 1.Fabrication 2.Measu

2、red 3.Work in the last two weeks Processes Information StoragePECVD:SiO2, Si3N4, SiC Sputter: Ti, Au, Pt, Al, Cr, W, PbLPCVD: PolySi, SiO2,Si3N4Si Oxidation:HO,O2,H2OMembraneIon Injection:As+,P+,B+,BF2+ Diffusion: P+,B+AdjustingICP: Si, Ti/Al, Cr/Cu, Cr/Pt, Ti/Pt/Au, Pyrex, SiO2RIE:Si,SiO2,Si3N4, Si

3、O2,Solutions: KOH, BHF, HF, H3PO4EtchingAnode (electrostatic), Au-Si, hotBondingWork in the last two weeks 1. Silicon Microfabrication : . 2. MEMS Reliability: . 3. NSFC Requisition : . 4. Other: Published papers of IME References and PPT files Work in the last two weeks Safety and Operation Handboo

4、kSafetyExit, Fire extinguisher, Shower equipment, Eye bath systemMSDSHealth hazard, Fire hazard, Specific hazard, ReactivityEtching Room600m2，Etching platform, Shelf, Reagent chemicalsFuture work in the next weekSimulate .Read Learn Work in the last weekPassed the 1 Read references 2Simulated and an

5、alyzed 3 Design the fabrication 4Work in the last weekTuning linearityOutput powerFrequency pullingTuning sensitivityFrequencyrangeHarmonic rejectionFrequency pushingThe main performance figures .Work in the last month 2. 學(xué)習(xí).仿真 1. 查閱文獻(xiàn) 4. 進(jìn)實(shí)驗(yàn)室. 3. 工藝制作流程Work in the last month實(shí)驗(yàn)相關(guān) 曝光顯影 電鍍 甩膠烘膠 正膠AZ P

6、4903Work in the last month用. 大概15umWork in the last two weeks電鍍工程申請(qǐng)申請(qǐng)的準(zhǔn)備3.會(huì)議投稿124Work in the last two weeks稀釋HF溶液HF 0.4mol/L，腐蝕速率：室溫100nm/s，32度時(shí)200nm/sHF 2.6mol/LHNO3 2.2mol/L32度時(shí)300nm/sTi濕法腐蝕50:1:1 H2O:HF:HNO320:1:1H2O:HF:H2O21:1:20HF:H2O2:HNO3Work in the last two weeksI2 0.09mol/LKI 0.6mol/L腐蝕速率：室

7、溫8-15nm/sAu濕法腐蝕1:2:1 0I2:KI:H2O25g：7g：100mlBr2:KI:H2O 1:2:3HF:HAc:HNO3Work in the last two weeks國(guó)家基金對(duì)工程的要求越來(lái)越高根底性前瞻性戰(zhàn)略性強(qiáng)調(diào)原創(chuàng)性提高交叉工程的強(qiáng)度和比例強(qiáng)調(diào)學(xué)科交叉Work in the last two weeks研究實(shí)力寫(xiě)作技巧創(chuàng)新思想一新遮百丑基金有多種手段保護(hù)創(chuàng)新思想以往的研究積累和研究水平準(zhǔn)確、清晰、具體、可行的研究方案申請(qǐng)基金的三要素Work in the last two weeks申請(qǐng)書(shū)的核心問(wèn)題創(chuàng)新性重要性實(shí)用性連續(xù)性可行性科學(xué)選題做什么What-問(wèn)題的提出

8、為什么Why-意義分析怎么做How-技術(shù)路線立項(xiàng)依據(jù)工作積累實(shí)驗(yàn)條件人才梯隊(duì)支持條件Work in the last two weeks立項(xiàng)依據(jù)闡述工程對(duì)社會(huì)或經(jīng)濟(jì)的意義1本工程國(guó)內(nèi)外進(jìn)展情況2提出本工程解決的目標(biāo)3強(qiáng)調(diào)工程的必要性和重要性4Work in the last two weeks 研究目標(biāo)1 研究?jī)?nèi)容2 擬解決的關(guān)鍵問(wèn)題3 充分反映特色和創(chuàng)新點(diǎn)4 預(yù)期成果5研究方案Work in the last two weeks支持條件以往研究的積累1研究者的水平和專(zhuān)長(zhǎng)2研究所需的設(shè)施和設(shè)備3合作研究4Work in the last two weeks題目、內(nèi)容摘要、主題詞研究組組成年度方

9、案及預(yù)期進(jìn)展申請(qǐng)經(jīng)費(fèi)的額度和預(yù)算專(zhuān)家和單位的推薦意見(jiàn) 1 2 3 4 5 其它內(nèi)容Work in the last two monthsPECVD:SiO2, Si3N4, SiC Sputter: Ti, Au, Pt, Al, Cr, W, PbLPCVD: PolySi, SiO2,Si3N4Si Oxidation:HO,O2,H2O薄膜工藝Ion Injection:As+,P+,B+,BF2+ Diffusion: P+,B+調(diào)整參數(shù)ICP: Si, Ti/Al, Cr/Cu, Cr/Pt, Ti/Pt/Au, Pyrex, SiO2RIE:Si,SiO2,Si3N4, SiO2,

10、Solutions: KOH, BHF, HF, H3PO4刻蝕工藝Anode (electrostatic), Au-Si, hot鍵合工藝微電子所工藝信息庫(kù)Work in the last two monthsMEMS和IC的關(guān)鍵性差異IC無(wú)可動(dòng)部件，而MEMS 器件可以產(chǎn)生某種運(yùn)動(dòng)IC依靠其外表之下的各種效應(yīng)來(lái)工作，而MEMS 根本上是靠外表效應(yīng)工作的器件IC本質(zhì)上是平面化的，MEMS一般來(lái)說(shuō)卻不是Work in the last two monthsMEMS的優(yōu)勢(shì)集成化微型化多功能低本錢(qián)高性能低功耗Work in the last two months.組件層面.系統(tǒng)層面.元件層面.技

11、術(shù)層面Work in the last two months.加工技術(shù)加工技術(shù)加工技術(shù)Work in the last two months懸空結(jié)構(gòu)模片溝、槽單晶硅多晶硅鍵合技術(shù)微電子所四個(gè)體硅標(biāo)準(zhǔn)工藝機(jī)械性能好 幾何尺寸大浪費(fèi)硅材料與IC兼容不好各向同性腐蝕各向異性腐蝕體微加工Work in the last two months外表微加工兩層多晶硅外表微加工北大微電子所三層多晶硅外表微加工Berkley SA中心，PolyMUMPs五層多晶硅外表微加工美國(guó)Sandia國(guó)家實(shí)驗(yàn)室兩層MEMS結(jié)構(gòu)：一層是結(jié)構(gòu)材料,另一層為地面材料 多晶硅作為結(jié)構(gòu)層，淀積PSG作為犧牲層，氮化硅作為電隔離層兩層

12、主要的薄膜層，結(jié)構(gòu)層：多晶硅，犧牲層：二氧化硅Work in the last two monthsLIGA技術(shù)LIGA技術(shù)準(zhǔn)LIGA技術(shù)SLIGA技術(shù) 電鍍( Galvanoformung) 壓模(Abformung) 光刻(Lithographie) Work in the last two months襯底必須是導(dǎo)體或涂有導(dǎo)電材料1能實(shí)現(xiàn)大深寬比結(jié)構(gòu)2材料廣泛3制作高精度復(fù)雜圖形4易于大批量生產(chǎn)5不適合制作多層結(jié)構(gòu)6LIGA技術(shù)特點(diǎn)Work in the last two months硅/硅鍵合1、靈活性和半導(dǎo)體工藝兼容性2、溫度在鍵合過(guò)程中起著關(guān)鍵的作用3、硅片外表的平整度和清潔度 硅

13、/玻璃鍵合1、兩靜電鍵合材料的熱膨脹系數(shù)近似匹配2、陽(yáng)極的形狀影響鍵合效果3、外表狀況對(duì)鍵合力也有影響金屬/玻璃鍵合1、電壓、溫度和外表光潔度影響鍵合反響2、離子擴(kuò)散陽(yáng)極氧化影響鍵合3、鍵合界面處產(chǎn)生過(guò)渡層鍵合技術(shù)鍵合技術(shù)可以將外表加工和體加工有機(jī)地結(jié)合在一起Work in the last two months三維MEMS結(jié)構(gòu)加工中的材料結(jié)構(gòu)材料：硅、玻璃、半導(dǎo)體材料犧牲層材料電絕緣材料功能材料：壓電材料磁致伸縮材料形狀記憶合金Work in the last two months金屬：如Ti，Al，Cu，Cr 等非金屬：二氧化硅、氮化硅、碳化硅和磷硅玻璃等有機(jī)物和聚合物：如光刻膠，聚酰亞胺

14、、PMMA、SU-8等犧牲層材料Work in the last two monthsBCA前CMOS (pre-CMOS) 混合CMOS( intermediate-CMOS) 后CMOS(post-CMOS) CMOS-MEMS技術(shù)：將MEMS局部和CMOS電路做在同一塊襯底上 一種是在CMOS結(jié)構(gòu)層上面再淀積一層結(jié)構(gòu)層的微加工 另一種是直接以CMOS原有的結(jié)構(gòu)層作為MEMS結(jié)構(gòu)層的微加工 Work in the future 2. 考慮 1. 完成 3. 制作 4. 加工Work in the last two weeks Attend 08MEMS training01 Write S

15、C-JRP application02Write application03Design the 04Work in the last two weeksWrite SC-JRP applicationInput Chinese and English version1Contact with Vincent of NUS2The joint unit not Univ., but A*STAR3Cooperation failed, but be trained4Work in the last two weeksWrite .Proposal TitleComplex面向Work in t

16、he last two weeks. Aims and SignificanceMain objectives ApplicationsNovelty MethodologyWork in the last two weeksThe Develop Current Fabricate .Aims and SignificanceWork in the last two weeksMain Objectivesinvestigate .study realize set up Work in the last two weeksApplicationsMultiband Integration

17、High .RWork in the last two weeksNoveltyCurrent researchMost .This proposalInvestigate . Work in the last two weeksMethodologySSS Single wafer Measure .Step2Step3Step4 Optimize Simulate . Silicon-based Traditional . Polymer Develop . Integrate switches . Test Modify Set upStep1DesignWork in July and in this termFinished 1S