溫度傳感器外文翻譯

英文翻譯TemperaturehumiditysensorThesensorintypemanysensors,thetemperaturesensorandappliestwoaspectsinitsoutputbothissecondtoandwithitcorrelationtemperatureisanimportantphysicalparameter,heaffectsallphysical,chemistryandbiomedicineprocessmarch,regardlessofintheindustry,theagriculture,thescientificresearch,thenationaldefenseandpeople'sdailylifeeachaspect,thetemperaturesurveyandthecontrolallistheextremelyimportantwiththeelectronictechnologyandthematerialssciencedevelopment,toeachkindofnewthermalelementandthetemperaturesensorrequeststructureadvanced,theperformanceisstable,satisfiesthemoreandmorehighrequestwhichproposedtothetemperaturesurveyandthecontrol.SensorclassificationcarriesonclassifiedresistancetypePNaccordingtothemanufacturetemperaturesensormaterialandtheprincipleofworktotiethetypethermoelectricitytyperadiationformularoperatingregionisreferstotheresistancevaluetohavetheremarkablechangetemperaturesensoralongwiththetemperaturechange,itmaytransformdirectlythetemperatureastheelectricaltheoperatingtemperaturescope,itsresistancethewhichincreasesalongwiththetemperatureascensioniscalledpositivetemperaturecoefficient(PTC);Itsresistancenumberthewhichreducesalongwiththetemperaturetascensioniscallednegativetemperature(NTC);Thenegativetemperaturewhichreducessuddenlyalongwiththetemperatureriseiscalledcritical(CTR)inawarmareainternalresistance.1.PTCprincipleofthePTCrusuallytousethe(BaTio3)ceramicmaterial,thepureBaTio3ceramicshavetheextremelyhighelectronicresistivityunderoftenthetemperature,above108Q?m,thereforeistheinsulator.IfcarriesonthedopinginBaTio3,maycausetheBaTio3semiconductor,forexample:Mixesby%%rare-earthelement,butcausesittobecomehasunderthenormaltemperature——10Q?mNlineofsemiconductors.HaselectricitysemiconductorBaTio3,whenthetemperatureachievedwhenCurietemperatureT,ittransformsbythetetragonalsystemintothecubicsystem,thistimeitselectronicresistivityleapincreasesseveralmagnitudes(times).Positivetemperaturecoefficientthe(PTC)actsaccordingtothisnaturemanufacture.Afterinsemiconductormulti-crystalgrainstructureBaTio3,itscrystalgrain(generalsizesmallisapproximately3-10卜m)theinterioristhesemiconductornature;Butthecrystalboundary(hasferroelectricity)forthehigh-resistancearea.Whentypecrystalexternalvoltage,voltagemajorityoflandingsonhigh-resistancecrystalboundarylevel,thusthecrystalboundaryhasaneffecttothematerialelectricconductivity.Theelectronmustpassthroughthecrystalboundarybarrierpotentialbarrierfromacrystalgraintobeabletoarriveanothercrystalgrain.BelowCurietemperatureTc,BaTio3istetragonalsystemdielectric,theexistencehasthespontaneouspolarizedverystronginternalelectricfield,enabletheelectrontohavethehighenergy,thusthetraversingcrystalboundarypotentialbarrieriseasy.ButaboveCurietemperatureTc,BaTio3becomesthecubicsystembythetetragonalsystem,polarizesvanishingspontaneously,internalelectricfieldvanishing,theelectricityisdifficultinthetraversingpotentialbarrier,thereforeabovecuriewarmwasteTc,electronicresistivitysharpincrease.Whentwocrystalgrainscontactmutually,crystalgrainbarrierpotentialbarrierasshowninFigureispotentialbarrierlevelthickness,0Oisthebarrierheight.Accordingtotheequation,thebarrierheight00stickstheeffectivedielectricconstantseffbetweenwiththecrystaltherelationsis: Intheformula,n0isthedensityofdonors;eistheelectronicelectricquantity.s0isthevacuumcoefficientofdielectricalloss.Whentheelectronicoversteppingpotentialbarrierenters00,theelectronicresistivitymaywriteisWhenthetemperatureislowerthanCurietemperatureTC,seffthevalueisapproximatelyabout104,therefore00verysmall,theceramicelectronicresistivityrhoapproachesinthevolumeresistivitypv,afterthetemperaturesurpassesCurietemperatureTC,thevaluedropssuddenly,theAvalueincreases,causesrhothevaluesharpincrease,dopesBaTio3andrhoandbetweenthetemperaturerelationallikechart.NTCthrprincipleofworkNTCtherstormajorityisbythetransitionfamilymetaloxidecompound(mainlyiswithMn,co,Ni,Feandsoon),theagglutinationformsthesemiconductormetaloxidecompoundunderthecontrolledcondition,theyonlyhavethePsemiconductorcharacteristic.Regardingthecommonsemiconductingmaterial,theelectronicresistivitymainlyisreliesonalongwiththewarmwastechangethecurrentcarriernumberalongwiththetemperaturechange,thetemperatureincrement,thecurrentcarriernumberincreases,electricconductionabilityenhancement.ThuselectronicresistivityFfalls.Regardingtransitionmetaloxidecompoundsemiconductor,forexampleNiO,becauseitsacceptorionizingenergyisverysmall,broadbasicionizedcompletelyintheroomtemperature,namelythecurrentcarrierdensitybasicallyhasnothingtodowiththetemperature,thistime,shouldmainlyconsiderthetransportratioandthetemperaturerelations.Bythesemiconductorphysicsknowledge,thetransportratioexpressesbytheequationbelow:Intheformula:Thed--oxygenoctahedrongapisawayfrom(NiOistheNaClstructure);V0--latticevibrationfrequency;TheEi--activationenergy,indicatedtheelectronjumpsoriginallyfromoneinthepositiontheenergywhichneedstotheneighboringatomsite.OrrewritingThentheelectronicresistivityis:0Ne-Ei/kTIfcommand,thentypechanges:rho=p0eEi/KTObviouslythemetaloxidecompoundsemiconductorelectronicresistivitymainlyhasthetransportratioalongwiththetemperaturechangetocausealongwiththetemperaturechange.Whentemperatureincrement,theelectronicresistivitydrops,assumesthenegativetemperaturecoefficientcharacteristic.Criticaltemperaturealsobelongstothenegativetemperaturecoefficient.Butinsomecriticaltemperaturescope,itsresistancenumberdropssuddenlyalongwiththetemperaturerise.Anti-asshowninFigure4-4.Inthecharttheanti-rcurvehasaresistancenumberpointofdiscontinuity,approximatelyfor68°C,resistancenumberpointofdiscontinuitymagnitudegenerallyin3~carryontheadjustmentbasedonthematerialingredient,itissuitablespeciallyin65°C?75°Cbetweenuses,thiskindofresistormaymaketheconstanttemperaturecontrolandon-offelement.TheCTRrusuallyusestheglasssemiconductorprocessing,takethevanadiumasthemainmaterial.MixesincertainmaterialsandsoonoxidecompoundlikeCaO,BaO,SOorP2O5,TiO2becomesafterthehotdissolve.temperaturesensorbasiccharacteristicinviewofthefactthatthetemperaturesensortypeismany,moreoveritsworkmechanismisalsodifferent.Thismainlyintroducestthehotsensitivediodeandthehotsensitivetransistorcharacteristicandtheparameter.fromthesthematerialandanti-andsooncarryontheclassificationvariously.Accordingtostructureshapeclassification:Laminatedshape,gasketshape,rod-shaped,tubular,thinmembrane,thickmembranousandothershapes.Includesaccordingtotheanti-temperatureraclassification:Normaltemperature,hightemperatureandultralowtemperaturehotsensitiveresistor.Includesaccordingtotheanti-classification:Negativetemperaturecoefficientr(NTC),switchtemperaturer(PTC);Slowaberrationpositivetemperaturecoefficientr(PTC),thecriticalnegativetemperaturecoefficient,theplatinumresistorlimitsthetemperaturecurvelikechart4-4curvature1.1st,resistance-temperaturecharacteristicanti-isreferstobetweentheactualresistancevalueandtheresistancebodytemperaturedependentrelations,thisisoneofbasiccharacteristics.PTCswitchpositivetemperaturecoefficientanti-curve.valuerisessuddenlytosometemperaturenearbythemaximizing.Throughthedoping.IfdopesPbinBaTio3,maycauseTctothehightemperaturetraverse,mixesinelementsandsoonSrorSnafterBaTio3,maycauseTCtothelowtemperaturetraverse.MayaccordingtoneedtoadjusttCurietemperatureTC.TheactualresistancenumberexpressedwithRT.Isundercertainambienttemperature,usescausestheresistancenumberchangenottosurpasstheresistancevaluewhich%surveypoweractualresistancevalueiscalledthezeroenergyresistancevalue,oriscalleddoesnotgiveoffheatthepowerresistancevalue(coldresistancevalue).Theactualresistancevaluesizeisdecidedbytheresistormaterialandthegeometryshape.Iftheactualresistancenumberowntemperaturehasthefollowingrelations:NTCIntheformula:RTtime11temperatureTactualresistancevalue;R1andresistancegeometryshapewithmaterialrelatedconstantB,A11materialconstants.Fortheeasytooperate,usuallytakestheambienttemperaturefor25°Ctotakethereferencetemperature,thenhas:NTCputstheresistorhotly:RT/R25=exp[B(1/T-1/298)]PTCgchangealongwiththetemperatureTchange,andisproportionalwithmaterialconstantB.Therefore,usuallywhilegivestheresistancetemperaturecoefficient,mustpointoutwhenthesurveytemperature,positivetemperaturecoefficienttaTinvaluesuperiorconstantA.Slowaberrationpositivetemperaturecoefficientvaluein%/°C110%/°Cbetween.Buttheswitch(mutant)positivetemperaturecoefficientTmayachieve60%/°Corhigher.MaterialconstantBisusesfortodescribethetmaterialphysicalproperty-parameter.Alsoiscalledthethermalsensitivitytarget.Intheoperatingregion,theBvalueisnotastrictconstant,hasslightlyalongwiththetemperatureascensionincreases.Ingeneral,theBvaluegreatelectronicresistivityisalsohigh.ThedifferentBvaluematerialhasthedifferentuse,likeordinarynegativetemperaturecoefficientmaterialconstantBvaluebetween2000yi5000K.ThenegativetemperaturecoefficientBvaluemayaccordingtotheequationbelowcomputation:Positivetemperaturecoefficientresistor,itsAvalueaccordingtoequationbelowcomputation:Intheformula,R1R2respectivelyistimethermodynamictemperatureT1andtheT2resistancevalue.2.thermalproperties(1)dissipationconstantHdissipationconstantHdefinedasthetemperatureeachincreaseoncediffusionpower.Itusesforwhendescribeswork,theresistanceelementandtheexternalenvironmentcarryonthehotconversationaphysicalquantity.DissipationconstantHanddissipatedpowerP.ThetemperatureincrementATrelationsareTheHsizeandthetstructure,locatestheenvironmentmediumtype,thevelocityofmovement,thepressureandtheheatconductionperformanceandsoonrelated,whenambienttemperaturechange,Hhasthechange. (2)capacityandthetime-constantrappliancehascertaincalorificcapacityC,thereforeithascertainwarm.Alsoisthetemperaturechangeneedscertaintime.WhentheisheateduptheT2temperature,putstothetemperatureisintheT0environment,doesnotaddtheelectricpower,thestartstodecreasetemperature,itstemperatureTisthetimetfunction,in△ttime.Themayindicatetotheenvironmentdiffusionquantityofheatis:H(T-T0)At,thispartofquantityofheatisprovidesbythetemperaturedecrease.Itsvaluefor-CAT,thereforehas:Expressedintheenvironmentatmospherethesteamcontentphysicalquantityisay.Thehumidityexpressionmethodhastwokinds,namelyabsolutehumidityandrelativehum(RH).Theabsolutehumidityisreferstointheatmospherethewatercontentabsolutevalue,therelativehumidityisreferstointheatmospherethesteamtopresswiththeidenticaltemperatureunderratioofthesaturatedsteamtension,expressedwiththepercentage.Thehumiditysensororthedewcellarerefertotheparaphrasetothehumiditysensitivepart,itmaybethewetsensitiveresistor,alsomaybethewetsensitivecapacitororotherdewcells.Thehumiditysensorclassificationclassifiesaccordingtothefeelingwetphysicalquantity,thehumiditysensormaydivideintothreebigkinds,namelywetsensitiveresistor,wetsensitivecapacitorandwetsensitivetransistor.Thehumidityresistormakeswhichaccordingtotheusedifferentmaterialmaydivideinto:Metaloxidecompoundsemiconductorceramicswetsensitiveresistor,forexample:MgCr2O4series,ZnO-Cr2O3series;Elementmaterialwetsensitiveresistor,forexample:SemiconductorGe,Si,SeandCelement;Compoundwetsensitiveresistor,forexample:LiCl,CaSO4,andfluorideandiodideandsoon;Highpolymerwetsensitiveresistorandsoon.ThewetsensitivecapacitormainlyistheporousAl2O3materialmakesasthemedium.Thewetsensitivetransistordividesintothewetsensitivediodeandthewetsensitivethreelevelsoftubes.Thewetsensitiveresistorprincipleofworkandthecharacteristic1,themetaloxidecompoundsemiconductorceramicswetsensitiveresistor(1)principleofworkporousmetaloxidecompoundsemiconductorceramics,inthecrystalplaneandthecrystalboundaryplace,veryeasytoadsorbtdrone.Becausethewaterisonestrongpolardielectricmedium,nearbythehydronehydrogenatomhastheverystrongelectricfield,hastheverybigelectronaffinity.Whenhydroneadherestostickcoherewhenthesemiconductorceramicssurface,willformtheenergylevelverydeepattachmentsurfaceacceptorcondition,butfromsemiconductorceramicssurfacecaptureelectron,butwillformtheboundstateintheceramicsurfacethenegativespacecharge,correspondinglywillappeartheholeinthenearsurfacelayertoaccumulate,thuswillcausethesemiconductorceramicselectronicresistivitydepression.Moreover,accordingtotheionelectricconductanceprinciple,thestructurenotcompactsemiconductorceramicscrystalgrainhascertaincrevice,revealstheporouscapillaritytubular.Thedronemayadsorbsthroughthiskindofporebetweenvariouscrystalgrainssurfaceandthecrystalgrain,becauseadsorbstheeseparablerelievesthemassiveelectricconductionion,theseionsareplayingtheelectricchargetransportationroleinthewateradsorbedlayer.alongwithhumidityincrease,materialelectronic???1?11?1????resistivitydrop.oxidecompoundsemiconductorceramicswetsensitiveresistorprincipalvarietyandstructureThemetaloxidecompoundsemiconductorceramicswetsensitiveresistortypicalproductincludes:MgCr2O4-TiO2wetsensitiveresistor,ZnO-Cr2O3wetsensitiveresistor,ZnO-Li2O3-V2O5wetsensitiveresistorandsoon.Forexample:TheZnO-Li2O3-V2O5wetsensitiveresistance,istakeZnOasthemainmaterial,isjoiningaprice,twoprices,threepricesandsoonothermetaloxidecompoundburnstheceramicssemiconductingmaterial,thesurveyhumidityscopeis5%~100%RH,themeasuringaccuracyis2%,isonekindofmoreidealdewcell,andmaymaketheminiaturization,thestructureissimple.2nd,elementmaterialwetsensitiveresistorkindofwetsensitiveresistorisapartwhichtheelementsemiconductingmaterialortheelementmaterialmake.Thecarbonwetsensitiveresistorisoneresistance-humiditycharacteristicisthedewcell.Withtheorganicmatterpolypropyleneplasticpieceorthestickaresubstrates,spreadsclothonetoincludetheconductivecarbongranuleorganictextilefiberconstitution.Thiskindofwetsensitiveresistorcraftissimple,isadvantageousfortheusestheorganicmaterialabsorptionofmoisture,thevolumeexpansion,betweenthecarbongranuledistanceincreases,thustheresistancevalueincreasesprinciple.Theelementsemiconductor,haveonthehoneycombelectrodeceramicsubstrate,iscomposed[granulediameterbythecharacteristicintheFe3O4colloidbytheparticleapproximatelyfor(100?250)Xl0-8m],eachpelletonlythenamagneticdomain,therefore,thecocurrentpelletattractstheunionmutually,thusdoesnotneedthehighpolymermaterialtomakethecolloidbond,butcanobtainthegoodperformanceandthelongservicelife.Figure4-1istheFe3O4colloidwetsensitiveresistorstructuredrawing.Figure4-2istheFe3O4wetsensitiveresistorresistancehumiditycharacteristiccurve,displaysforthenegativefeelingwetcharacteristic.4th,thewetsensitiveresistorcharacteristic(1)resistance-humiditycharacteristicwetsensitiveresistorresistancenumberalongwiththehumiditychangeisgenerallytheindexrelationschange.溫度傳感器在種類繁多的傳感器中，溫度傳感器在其產(chǎn)量和應用兩方面都是數(shù)一數(shù)二的。熱量及與之相關的溫度是一個重要的物理參數(shù)，他幾乎影響所有的物理、化學和生物醫(yī)學進程的進行。因此，無論在工業(yè)、農(nóng)業(yè)、科學研究、國防和人民日常生活方方面面，溫度測量和控制都是極為重要的課題。隨著電子技術和材料科學的發(fā)展，對各類新型的熱敏元件及溫度傳感器要求結構先進、性能穩(wěn)定，以知足對溫度測量和控制提出的愈來愈高的要求。溫度傳感器的分類依照制造溫度傳感器的材料及工作原理進行分熱敏電阻器工作范圍熱敏電阻器是指電阻值隨溫度轉變而發(fā)生顯著的轉變的溫度傳感器它可以將溫度直接轉化為電信號。在工作溫度范圍內，其電阻隨著溫度的升高而增加的熱敏電阻器稱為正溫度系數(shù)熱敏制作PTC熱敏電阻器通常采用鈦酸鋇（BaTio）陶瓷材料，單純的BaTio陶瓷在常溫度下具有極高的電阻率，在10833Q?m以上，故為絕緣體。若在BaTio中進行攙雜，可使BaTio半導體化，例如：33摻以%%%的稀土元素，而使其成為在常溫下具有□?m的N行半導體。具有鐵電性的半導體的BaTio，當溫度達到居里點T時，它由四方晶系轉變成立方晶系，3c此時其電阻率躍增幾個數(shù)量級（倍）。正溫度系數(shù)熱敏電阻器（PTC）就是按照這個性質制作的。經(jīng)半導體化的多晶粒結構的BaTio中，其晶粒（一般尺寸小約為33—10沖）內部為半導體性質；而晶粒間界為高阻區(qū)（具有鐵電性）。當樣晶外加電壓時，電壓大部份降落在高阻的晶界層上，因此晶界對材料的導電性能起作用。電子從一晶粒必需穿越晶界阻擋層勢壘才能抵達另一晶粒在居里溫度Tc以下，BaTio為四方晶系的強介電相，存在有自發(fā)極化很強的內部電場，使電子具有較3高的能量，從而穿越晶界勢壘容易。而在居里以上，BaTio由四方晶系變成立方3晶系，自發(fā)極化消失，內部電場消失，電于穿越勢壘困難，因此在居里溫廢c以上，電阻對于一般半導體材料，電阻率隨溫廢的轉變主如果依賴于載流子數(shù)量隨溫度的轉變，溫度升高，載流子數(shù)增加，導電能力增強.從而電阻率F降。對于過渡金屬氧化物半導體，例由于它的受主電離能很小，在室溫廣大體已全數(shù)電離，即載流子濃度大體上與溫度無關，此時，應主要考慮遷移率與溫度之關系。由半導體物理知，遷移率由下式表達：可見金屬氧化物半導體的電阻率隨溫度的轉變主如果有遷移率隨溫度的轉變而引發(fā)的。當溫度升高時，電阻率下降，呈負溫度系數(shù)特性。臨界溫度熱敏電阻器（CTR）也屬于負溫度系數(shù)熱敏電阻器。在某一臨界溫度范圍內，其阻