TFT LCD黃光制程介紹

IVOCONFIDENTIALPhotoIntroductionINTArray

2023/12/17PhotoResistThinFilmGlass

ArrayProcessExposureLightPhotoMaskStripThinFilmGlassPRcoatingPhotoResistDevelopEtch2023/12/17PhotoProcessPhotoprocess:Coating--->Exposure--->DevelopmentCoating：將光阻均勻地涂布于基板表面Exposure：由紫外線透射光罩將圖形轉(zhuǎn)寫至光阻表面Development：利用堿性顯影液將紫外線照射的光阻去除以形成圖形2023/12/17ThestructureofDNSSK-1100GLinear-coating(Vacuumdry)InEUVRB&AAjetAKDryOutPost-bakeDHBInOutPre-BakeTitlerorE.E.Exp.BF90°turnInOutOutAOILorConveyorAKDryRinse(Sub.Direct)Dev.1,230,7305,9105,5102023/12/17Cleanerintroduction2023/12/17CleanerintroductionThesimpledrawingofcleaner2023/12/17PhotoProcess-Cleaner目的

:減小接觸角和減少灰塵控制參數(shù):E-UVcleanabilityRinseflowrateMistcontrolanddryperformanceThinfilmconditionCleanerintroduction2023/12/17ThestructureofE-UVchamberCleanerintroduction2023/12/17ThemeasurementofcontactangleCleanerintroduction2023/12/17Thesimpledrawingofrollerbrush&AAjetrinsesection

Cleanerintroduction2023/12/17AAJET

Cleanerintroduction2023/12/17ThebasicprincipleofinclinedrinseCleanerintroduction2023/12/17BrushstructureCleanerintroduction2023/12/17AirknifeWaterstripperVerticaltilt60°Horizontaltilt60°Cleanerintroduction2023/12/17ThedryprocedureofAKCleanerintroduction2023/12/17AirKnifeCleanerintroduction2023/12/17Coaterintroduction2023/12/17CoaterintroductionDehydrationbake2023/12/17DehydrationbakeCoaterintroduction2023/12/17Purpose:ToIncreasetheAdhesionofPhotoresistAdhesion:HMDS(Hexamethyldisilazane);[(CH3)3Si]2NHKeyparameter:AdhesionMethodAdhesionTimeTemperatureExhaustFunction:Si-O-H----OH2+[(CH3)3Si2NHSi-O-Si-(CH3)3PhotoProcess-AdhesionCoaterintroduction2023/12/17PhotoProcess-AdhesionCoaterintroduction2023/12/17Resist:

樹脂（20%）感光劑

(PAC)（5%）溶劑（75%）添加劑

PhotoProcess-CoatingCoaterintroduction2023/12/17目的1.將MASK上的圖案轉(zhuǎn)移到膠中2.在后續(xù)工藝中保護(hù)下面的材料Coaterintroduction2023/12/17ExposureLightPositiveTypeNegativeTypeDevelopingResistThinFilmSubstrateMaskChrome正光阻：曝光后，光照到部分顯影后去除負(fù)光阻：曝光后，光照到部分顯影后保留Coaterintroduction2023/12/17樹脂惰性的聚合物（包括碳、氫、氧的有機(jī)高分子）基質(zhì)，用于把PR中的不同材料聚在一起的黏合劑。給予PR的機(jī)械和化學(xué)性質(zhì)（黏附性、柔順性、熱穩(wěn)定性）感光劑PR內(nèi)的光敏成分，對(duì)光形式的輻射能，特別是紫外區(qū)，會(huì)發(fā)生光化學(xué)反映。Coaterintroduction2023/12/17溶劑使PR保持液體狀態(tài)，對(duì)PR的化學(xué)性質(zhì)幾乎沒有影響添加劑專有化學(xué)品，用來控制和改變PR材料的特定化學(xué)性質(zhì)或光響應(yīng)特性，包括控制PR反射率的染色劑Coaterintroduction2023/12/17PR的物理特性分辨率對(duì)比度敏感度粘滯性黏附性抗蝕性表面張力存儲(chǔ)和傳送沾污和顆粒Coaterintroduction2023/12/17分辨率能夠在玻璃基板上形成符合要求的最小的特征圖形。形成的CD越小，PR的分辨能力和光刻系統(tǒng)就越好Coaterintroduction2023/12/17對(duì)比度PR從曝光區(qū)域到非曝光區(qū)域的過度的陡度對(duì)比度差對(duì)比度好FilmGlassPRFilmGlassPRCoaterintroduction2023/12/17敏感度PR產(chǎn)生良好圖形所需要的一定波長(zhǎng)的最小能量值（MJ/C㎡），對(duì)于一定的曝光能量，PR的吸收量越大越好Coaterintroduction2023/12/17粘滯性粘滯性與時(shí)間有關(guān)，會(huì)隨著PR溶劑的揮發(fā)增加。粘滯性增加，PR流動(dòng)趨勢(shì)變小，厚度會(huì)增加。Coaterintroduction2023/12/17粘附性PR與下層材料黏附之強(qiáng)度。如黏附性不好，會(huì)導(dǎo)致表面圖形的變形。Coaterintroduction2023/12/17抗蝕性PR必須保持黏附性，并在蝕刻工藝中保護(hù)下層材料。如在高溫下進(jìn)行處理，還需要有熱穩(wěn)定性。Coaterintroduction2023/12/17表面張力液體中將表面分子拉向液體主體內(nèi)的分子間吸引力。Coaterintroduction2023/12/17沾污和顆粒在PR涂布之前，要使用Filter，使沾污控制在最小程度Coaterintroduction2023/12/17SpinCoatingSlit+SpinCoatingslitCoaterCoatingMethodsCoaterintroduction2023/12/17

SlitCoatingCoaterintroduction2023/12/17

ExposureIntroduction

2023/12/17LocationsofUnitsMaskPellicleParticleCheckerMaskChangerMaskCassetteConsoleBoxPlateControlBoxMercuryLampMainBodyExposureIntroduction2023/12/17LayoutExposureIntroduction2023/12/17亮場(chǎng)掩膜版暗場(chǎng)掩膜版MASK（掩膜版）分類ExposureIntroduction2023/12/17材料石英：高光學(xué)透射和低溫度膨脹。鉻：沉積在掩膜版上的不透明材料。有時(shí)會(huì)在鉻表面形成一層氧化鉻抗反射層。ExposureIntroduction2023/12/17OperationModeoftheConsoleInlinemodeCommunicationbetweenMPAandI/FPlateisloadedbyI/FarmStandalonemodeNocommunicationbetweenMPAandI/FPlateisloadedbyHandConsoleMode(nouse)NocommunicationbetweenMPAandConsoleExposureIntroduction2023/12/17UM06System光罩只在Y方向移動(dòng)玻璃基板可在XY方向移動(dòng)梯形鏡凹面鏡凸面鏡ExposureIntroduction2023/12/17Resolutionvs.WavelengthR:resolution(minimallinewidth)K:constantλ:wavelengthNA:numericalapertureResolutionofExposureMachineTFT-LCDexposureequipmentResolution~3umExposureIntroduction2023/12/17IlluminationSystem光源：8千瓦超高壓水銀燈，2只Lamp：Standardtype--750小時(shí)，Longtype--1000小時(shí)波長(zhǎng)：exposure----340nm~460nm[g/h/iline，436nm/405nm/365nm]alignment---536nm~600nm[d/eline，578nm/546nm]強(qiáng)度：可見光波長(zhǎng)范圍（nm）紅外輻射紫外輻射700500600400ExposureIntroduction2023/12/17Mask/PlateAAAA：AutoAlignment自動(dòng)對(duì)準(zhǔn)，分為預(yù)對(duì)準(zhǔn)(Pre)和精對(duì)準(zhǔn)(Fine)兩種對(duì)準(zhǔn)：maskaligntomaskstage，platealigntomask光罩對(duì)準(zhǔn)：maskFMAmark--->stagesetmark基板對(duì)準(zhǔn)：platealignmentmark--->maskTV-pre/finemarkExposureIntroduction2023/12/17MaskStage架構(gòu)說明

Mask放到maskstage後,先由CCD(3.85X)做maskpre-alignment,接著做maskfinealignment(由maskalignmentmark去對(duì)準(zhǔn)maskstage上的setmark—此動(dòng)作由X/Y/Thetastage完成),完成以上動(dòng)作後,maskstage上的LockPads會(huì)將X/Y/Thetastage固定在maskstage上,而maskstage是浮在maskguide及Yawguide上的.Setmark與mask之間隔為10um.Canonmasktype:Longmask(520X800,t=10mm),而其對(duì)應(yīng)在maskstage上的硬體裝置有Ypressingcylinder及maskreferencepin.Maskstage在曝光時(shí)只做Y方向移動(dòng)(scan).ExposureIntroduction2023/12/17Patechuckandmechanicalpre-alignmentsensor

1.Chucksize依玻璃大小訂做2.直放或橫放時(shí)各有3個(gè)pre-alignmentsensor3.Mechanicalpre-alignmentsensor只做玻璃相對(duì)位置計(jì)測(cè)用(touch玻璃邊緣)ExposureIntroduction2023/12/17LiftPin

1.Lift高度:chuck表面往上算50mm(四根liftpin之間的高度差為0.2mm（以下)。2.位置再現(xiàn)精度:±0.1mm。3.Liftstroke:55mm(上限:chuck表面往上50mm,下限:chuck表面往下5mm,即-5mm)。4.動(dòng)作時(shí)間:0.9sec(0.2sec/由chuck下面-5mm移動(dòng)到chuck表面

+停止時(shí)間,0.7sec/chuck表面往上移50mm)。ExposureIntroduction2023/12/17PlateAFCAFC：AutoFocusCompensation自動(dòng)聚焦DOF：30um，在其范圍內(nèi)的光阻曝光顯影后圖形清晰如果stage(基板承載平臺(tái))平坦度超出規(guī)格，導(dǎo)致基板上光阻位于DOF之外，那么曝光顯影后會(huì)導(dǎo)致CD異常。DOF:30um光阻(1.5um±3%)ExposureIntroduction2023/12/17JobFlowinInlineModeJobRegistration/Download

程式選擇

MaskLoading光罩裝載

MaskUnloading光罩卸載

PlateUnloading基板卸載

PlateExposure基板曝光

PlateAutoAlignment基板對(duì)準(zhǔn)

PlateAutoFocus基板聚焦

MaskAutoAlignment光罩對(duì)準(zhǔn)

PlateLoading基板裝載ExposureIntroduction2023/12/17Optimize-3ActionFlowshot6shot2shot3shot5shot4shot1P1P2P3ExposureIntroduction2023/12/17Developerintroduction2023/12/17DeveloperintroductionDeveloperstructure2023/12/17Purpose:Todissolvetheexposurearea(forpositive-typeresist)Mechanism:KeyParameter:DispenseMethodTemperature(Developer)DevelopertimeDeveloperConcentrationPhotoProcess-DeveloperDeveloperintroduction2023/12/17PhotoProcess-DeveloperDeveloperintroduction2023/12/17LineWidth(

m)DevelopmentTime(sec)ProceedingofDevelopmentDeveloperintroduction2023/12/17DDS

(DeveloperDilutionSystem)

DPF-4060

(DeveloperPurificationFiltrationsystem)

NagasedeveloperrecyclesystemDeveloperintroduction2023/12/17Totalpitch2023/12/17測(cè)定座標(biāo)値以Table座標(biāo)値＋Camera座標(biāo)來表現(xiàn)。測(cè)定Edge検出點(diǎn)(Ｘ,Ｙ)=(Ｘt＋ＸC

,Ｙt＋ＹC)Camera座標(biāo)系Table座標(biāo)系測(cè)定座標(biāo)系ＸCＹCＸＹＸtＹtTotalpitch2023/12/17Machineconfiguration測(cè)定用CCDcameraFiberlaser測(cè)長(zhǎng)機(jī)GlassairChucktableAircylinderstageLaserheadMicroscopeLaserautofocus防震臺(tái)xy2023/12/17LaserAF(knifeedgemethod)JustfocusFarNearPAPB2023/12/171300mm1100mm(0,0)191021725261833414234311124192728203543443651314621293022374546387151682331322439