模擬電子技術(shù)基礎(chǔ)（西安郵電大學(xué)） 知到智慧樹網(wǎng)課答案

模擬電子技術(shù)基礎(chǔ)（西安郵電大學(xué)）-知到答案、智慧樹答案第一章單元測試1、問題：Whichofthefollowingisnotacommonlyusedsemiconductormaterial'?（）選項(xiàng)：A:carbonB:leadC:siliconD:germanium答案:【lead】2、問題：Thecharacteristicofanidealdiodearethoseofaswitchthatcanconductcurrent（）.選項(xiàng)：A:inbothdirectionsB:inonedirectiononlyC:inbothdirectionsbutinonlyonedirectionatatimeD:dependsonthecircuititisusedin答案:【inonedirectiononly】3、問題：Whenadiodeisdopedwitheitherapentavalentoratrivalentimpurityitsresistancewill（）.選項(xiàng)：A:increaseB:decreaseC:maketheresistancestableagainstvariationduetotemperature答案:【decrease】4、問題：Thepiecewiselinearmodel,equivalentcircuitofthediodeconsistsof（）.選項(xiàng)：A:ajunctioncapacitor,abattery,asmallresistor,andtheidealdiodeB:abattery,asmallresistor,andtheidealdiodeC:abatteryandtheidealdiodeD:theidealdiode答案:【abattery,asmallresistor,andtheidealdiode】5、問題：Whenap-njunctionisreverse-biased,itsjunctionresistanceis（）.選項(xiàng)：A:highB:lowC:determinedbythecomponentsthatareexternaltothedeviceD:constantlychanging答案:【high】第二章單元測試1、問題：Whatisthevalueofthevoltagedroppedacrossforward-biasedsilicondiodesthatareconnectedinparallelwitheachother?（）.選項(xiàng)：A:11.3VB:0.35VC:0.7VD:1.4V答案:【0.7V】2、問題：Theresistorvoltageandresistorcurrentinthiscircuitare（）.選項(xiàng)：答案:【】3、問題：Whichofthefollowingcircuitsisusedtoeliminateaportionofasignal?（）.選項(xiàng)：A:ClipperB:DamperC:Voltagemultiplier答案:【Clipper】4、問題：Thecircuitshownhereisa（）.選項(xiàng)：A:seriesclipperB:parallelclipperC:seriesclamperD:shuntclamper答案:【parallelclipper】5、問題：TheZenerdiodemustbeoperatedsuchthat（）.選項(xiàng)：A:B:islessthanthespecifiedC:theappliedvoltageisgreaterthanD:Allofthese答案:【Allofthese】第三章單元測試1、問題：Intheactiveregion,thebase-emitterjunction（）.選項(xiàng)：A:andthebase-collectorjunctionsarebothforward-biasedB:andthebase-collectorjunctionsarebothreverse-biasedC:isforward-biasedwhilethebase-collectorjunctionisreversed-biasedD:isreverse-biasedwhilethebase-collectorjunctionisforward-biased答案:【isforward-biasedwhilethebase-collectorjunctionisreversed-biased】2（、問題：ABJThasmeasureddccurrentvaluesof=0.1mAand=8.0mA.WhenIBisvariedby100μA,ICchangesby10mA.Whatisthevalueoftheβacforthisdevice?）.選項(xiàng)：A:80B:10C:100D:800答案:【100】3、問題：WhenaBJTisoperatingintheactiveregion,thevoltagedropfromthebasetotheemitterisapproximatelyequaltothe（）。選項(xiàng)：A:basebiasvoltageB:basecurrenttimesthebaseresistorC:diodedrop(about0.7V)D:emittervoltage答案:【diodedrop(about0.7V)】4、問題：BJTsarecommonlyusedas（）.選項(xiàng)：A:theprimarycomponentsinamplifiersB:seriesdampercircuitsC:theprimarycomponentsinrectifiers答案:【theprimarycomponentsinamplifiers】5、問題：Theconditionwhereincreaseinbiascurrentwillnotcausefurtherincreasesincollectorcurrentiscalled（）.選項(xiàng)：A:cutoffB:saturationC:activeoperation答案:【saturation】第四章單元測試1、問題：WhenaBJTisbiasedinthecutoffregionthecollector-to-emittervoltageistypicallyequalto（）.選項(xiàng)：A:theemittervoltageB:0.03VC:thecollectorcurrenttimesthecollectorresistorD:thecollectorsupplyvoltage答案:【thecollectorsupplyvoltage】2、問題：Calculatethecollector-emittervoltageforthisemitter-stabilizedcircuit.（）選項(xiàng)：A:4.32VB:10.68VC:0.1335VD:14.24V答案:【4.32V】3、問題：Thedifferencebetweentheresultingequationsforanetworkinwhichannpntransistorhasbeenreplacedbyapnptransistoris（）.選項(xiàng)：A:thevaluesoftheresistorsB:thevalueofβC:thesignassociateswiththeparticularquantities答案:【thesignassociateswiththeparticularquantities】4、問題：Thetermquiescentmeans（）.選項(xiàng)：A:midpoint-biasedB:atrestC:activeD:inactive答案:【inactive】5、問題：Voltage-dividerbiasstabilityis（）.選項(xiàng)：A:dependentonalphaB:dependentofbetaC:dependentonthecollectorresistorD:independentofbeta答案:【independentofbeta】第五章單元測試1、問題：Giventhisconfiguration,determinetheinputimpedanceifVS=40mV,Rsense=0.5kΩ,andtheinputcurrentis20μA.（）選項(xiàng)：A:1.5MΩB:5.822MΩC:1,500ΩD:582kΩ答案:【1,500Ω】2、問題：Thetransistormodelreplacesthe（）withthejunctiondiode'sacresistance.選項(xiàng)：A:collector-basejunctionB:collector-emitterjunctionC:emitter—basejunction答案:【emitter—basejunction】3、問題：Calculatethevoltagegainforthiscircuit.（）選項(xiàng)：A:-137.25B:-8.4C:-7.91D:-16.34答案:【-137.25】4、問題：Atransistoramplifierhasaninputsignalappliedtoitsemitterterminalandanoutputsignaltakenfromitscollectorterminal.Theamplifierisa(n)（）.選項(xiàng)：A:common-emitteramplifierB:common-baseamplifierC:common-collectoramplifierD:emitterfollower答案:【common-baseamplifier】5、問題：Thevoltagegainofaverywell-designedcommoncollectoramplifierconfiguration,usingapnptransistor,is（）.選項(xiàng)：A:about-0.9B:about0.9C:intherange0.95to0.99D:intherange-0.95to-0.99答案:【intherange0.95to0.99】第六章單元測試1、問題：Shockley'sequationdefinesthe（）oftheFETandareunaffectedbythenetworkinwhichthedeviceisemployed.選項(xiàng)：A:characteristicsB:draincharacteristicsC:input/outputcharacteristicsD:transfercharacteristics答案:【transfercharacteristics】2、問題：Forann-channeldepletionMOSFET,=8mAand=0.8V,whatisthevalueofthedraincurrent,?（）選項(xiàng)：A:8mAB:10.25μAC:10.28mAD:6mA答案:【10.28mA】3、問題：TheregionoftheJFETdraincurvethatliesbetweenpinch-offandbreakdowniscalled（）.選項(xiàng)：A:theconstant-voltageregionB:theohmicregionC:thesaturationregion答案:【thesaturationregion】4、問題：InthefamilyofFETs,youcanexpecttofind（）.選項(xiàng)：A:ann-channeltypeB:ap-channeltypeC:unipolarstructure答案:【ann-channeltype;ap-channeltype;unipolarstructure】5、問題：FETsusually（）.選項(xiàng)：A:arelesssensitivetotemperaturechangethanBJTsB:haveahigherinputimpudencethanBJTsC:aresmallerinconstructionthanBJTs答案:【arelesssensitivetotemperaturechangethanBJTs;haveahigherinputimpudencethanBJTs;aresmallerinconstructionthanBJTs】第七章單元測試1、問題：Thisgraphicalsolutionrepresents（）.選項(xiàng)：A:fixedbiasforann-channelJFETB:voltage-dividerbiasforann-channelJFETC:selfbiasforann-channelJFET答案:【selfbiasforann-channelJFET】2、問題：Generally,itisgooddesignpracticeforlinearamplifierstohaveoperatingpointsthatcloseto（）.選項(xiàng)：A:areclosetosaturationlevelB:thecut-offregionC:themidpointoftheloadline答案:【themidpointoftheloadline】3、問題：WhichofthefollowingbiasingcircuitscanbeusedwithE-MOSFETs?（）選項(xiàng)：A:selfbiasB:zerobiasC:drain-feedbackbiasD:current-sourcebias答案:【drain-feedbackbias】4、問題：TheprimarydifferencebetweenJFETsanddepletion-typeMOSFETsis（）.選項(xiàng)：A:JFETscanhavepositivevaluesofandlevelsofdraincurrentthatexceedB:depletion-typeMOSFETscanhavepositivevaluesofC:depletion-typeMOSFETscanhaveonlypositiveofD:JFETscanhaveonlypositivevaluesofandlevelsofthatexceed答案:【depletion-typeMOSFETscanhavepositivevaluesofandlevelsofthatexceed】5、問題：AJFETcanbebiasedinseveraldifferentways.Thecommonmethod(s)ofbiasingann-channelJFETis(are)（）.選項(xiàng)：A:self-biasconfigurationB:voltage-dividerbiasconfigurationC:fixed-biasconfiguration答案:【self-biasconfiguration;voltage-dividerbiasconfiguration;fixed-biasconfiguration】第八章單元測試1、問題：TheFETversionoftheBJT'scommon-emitterconfigurationisthe（）circuit.選項(xiàng)：A:common-sourceB:common-gateC:common-drainD:common-current答案:【common-source】2、問題：CalculatetheinputimpedanceforthisFETamplifier.（）選項(xiàng)：A:B:C:D:=woulddependonthedraincurrent答案:【】3、問題：Designthiscircuitforavoltagegainof10.Youhavetocalculatethevalueofresistorand.Itisdesiredthatthetransistoroperatewitharelativelyhighvalueof.Forthisdevice,ahighvalueofisdefinedas.（）選項(xiàng)：A:B:C:D:答案:【】4、問題：The（）amplifierhashighinputimpedance,lowoutputimpedance,andlowvoltagegain.選項(xiàng)：A:common-gateB:common-drainC:common-source答案:【common-drain】5、問題：The（）FETamplifierhaslowinputimpedance,highoutputimpedance,andhighvoltagegain.選項(xiàng)：A:common-gateB:common-drainC:common-source答案:【common-gate】第九章單元測試1、問題：CalculatethelowfrequencybreakpointduetothecapacitorforthisBJTamplifier.（）選項(xiàng)：A:B:C:D:答案:【】2、問題：Ifseveralidenticalstagesofamplifiers,eachhavingtheexactsameupperandlowercutofffrequencies,areconnectedincascade,thenthebandwidthoftheresultingamplifierwill）.（選項(xiàng)：A:increaseB:remainunchangedC:decreaseD:beequaltothesumofalltheindividualbandwidths答案:【decrease】3、問題：A3-dBdropinβoccursat（）.選項(xiàng)：A:B:C:D:答案:【】4、問題：NegativedBvaluesrepresent（）.選項(xiàng)：A:powergainB:powerlossesC:powervaluesthatdonotchange答案:【powerlosses】5、問題：Anamplifierhasamidbandpowergainof24,500.WhatisthevalueofthepowergainindBforthecircuit?（）選項(xiàng)：A:87.78dBB:43.9dBC:4.39dB答案:【43.9dB】第十章單元測試1、問題：Underdifference-modeoperation,thedifference-modevoltagegainforthiscircuitis（）.選項(xiàng)：A:0.0397B:80C:40D:0.08答案:【40】2、問題：Theoperationalamplifierwillonlyslightlyamplifysignals（）.選項(xiàng)：A:whenthesupplyvoltagesaremorethen±25VB:whenthesupplyvoltagesarelessthen±5VC:thatarecommononboththeinputsD:thataredifferentonboththeinputs答案:【thatarecommononboththeinputs】3、問題：Theinvertingandnoninvertinginputstoanop-ampareusedtodrivea(n)（）amplifier.選項(xiàng)：A:invertingB:noninvertingC:differentialD:open-loop答案:【differential】4、問題：Whenagivenop-amphasacommon-modeinputof10V,theoutputofthedeviceis10V.Whenthedevicehasadifferentialinputof2mV,theoutputofthedeviceis10V.WhatistheCMPRofthedevice?（）選項(xiàng)：A:5:1B:5000:1C:1000:1D:5,000,000:1答案:【5000:1】5、問題：Thebandwidthofanamplifieris（）.選項(xiàng)：A:therangeoffrequenciesoverwhichgainremainsrelativelyconstantB:therangeoffrequenciesbetweenthelowerandupper3dBfrequenciesC:therangeoffrequenciesfoundusing答案:【therangeoffrequenciesoverwhichgainremainsrelativelyconstant;therangeoffrequenciesbetweenthelowerandupper3dBfrequencies;therangeoffrequenciesfoundusing】第十一章單元測試1、問題：Iftheinputvoltageis0.25Vandtheoutputis-2.5V,thevalueofmustbe（）.選項(xiàng)：A:40.0kΩB:20.0kΩC:16.0kΩD:5.0kΩ答案:【20.0kΩ】2、問題：Theoutputvoltage,VO,isgivenby（）.選項(xiàng)：A:B:C:答案:【】3、問題：Asummingintegratorisanop-ampintegratorthathas（）.選項(xiàng)：A:multiplefeedbackcapacitorsB:multipleinputresistorsC:multipleinputresistorsandfeedbackcapacitors答案:【multipleinputresistorsandfeedbackcapacitors】4、問題：Asecondorderlow-passfilterhasahigh-endroll-offof（）.選項(xiàng)：A:60dB/octaveB:40dB/decadeC:20dB/octaveD:6dB/decade答案:【40dB/decade】5、問題：Anactivefilterthatprovidesaconstantoutputforinputsignalsaboveiscalledanideal（）.選項(xiàng)：A:low-passfilterB:high-passfilterC:bandpassfilter答案:【high-passfilter】第十二章單元測試1、問題：AclassBamplifier(notpush-pull)（）.選項(xiàng)：A:conductsthrough360°oftheinputwaveformB:conductsthrough180°oftheinputwaveformC:conductsbetween180°and360°degreesoftheinputwaveform,dependingontheamountofdcbiasD:conductsthroughlessthan180°oftheinputwaveform答案:【conductsthrough180°oftheinputwaveform】2、問題：CrossoverdistortioninclassBamplifiersispreventedby（）.選項(xiàng)：A:biasingthetransistorsdeeplyintocutoffB:biasingthetransistorsslightlyabovecutoffC:usingcomplementary-symmetrytransistorsD:increasingtheloadresistance答案:【biasingthetransistorsslightlyabovecutoff】3、問題：ThemaximumtheoreticalefficiencyofanRC-coupledclassAamplifieris（）.選項(xiàng)：A:25%B:50%C:78.5%D:99%答案:【25%】4、問題：Poweramplifiersaretypicallyusedtodrivelowimpedanceloads.（）選項(xiàng)：A:對B:錯(cuò)答案:【對】5、問題：Thepowerthatanamplifierdeliverstoaloadisequaltothedif