半導(dǎo)體封裝制程及其設(shè)備介紹課件

1、半導(dǎo)體封裝制程與設(shè)備材料知識(shí)簡(jiǎn)介Prepare By：William Guo 2007 . 11 Update半導(dǎo)體封裝制程與設(shè)備材料知識(shí)簡(jiǎn)介Prepare B半導(dǎo)體封裝制程概述半導(dǎo)體前段晶圓wafer制程半導(dǎo)體后段封裝測(cè)試封裝前段（B/G-MOLD）封裝后段（MARK-PLANT）測(cè)試封裝就是將前製程加工完成後所提供晶圓中之每一顆IC晶粒獨(dú)立分離，並外接信號(hào)線至導(dǎo)線架上分離而予以包覆包裝測(cè)試直至IC成品。半導(dǎo)體封裝制程概述半導(dǎo)體前段晶圓wafer制程半 導(dǎo) 體 制 程O(píng)xidization(氧化處理)Lithography(微影)Etching(蝕刻)Diffusion Ion Implan

2、tation(擴(kuò)散離子植入)Deposition(沉積)Wafer Inspection(晶圓檢查)Grind & Dicing(晶圓研磨及切割)Die Attach(上片)WireBonding(焊線)Molding(塑封) Package(包裝)Wafer Cutting(晶圓切斷)Wafer Reduce (晶圓減薄)Laser Cut & package saw(切割成型)Testing(測(cè)試)Laser mark(激光印字)IC制造開(kāi)始前段結(jié)束后段封裝開(kāi)始製造完成半 導(dǎo) 體 制 程O(píng)xidizationLi封 裝 型 式 (PACKAGE)Through HoleMountShape

3、MaterialLead PitchNo of I/OTypical FeaturesCeramicPlastic2.54 mm(100miles)8 64DIPDual In-linePackagePlastic2.54 mm(100miles)1 direction lead325SIPSingle In-linePackage封 裝 型 式 (PACKAGE)Throug封 裝 型 式 Through HoleMountShapeMaterialLead PitchNo of I/OTypical FeaturesPlastic2.54 mm(100miles)1 directionle

4、ad1624ZIPZigzagIn-linePackagePlastic1.778 mm(70miles)20 64S-DIPShrinkDual In-linePackage封 裝 型 式 Through HoleSh封 裝 型 式 Through HoleMountShapeMaterialLead PitchNo of I/OTypical FeaturesCeramicPlastic2.54 mm(100miles)half-size pitch in the width direction2432SK-DIPSkinnyDualIn-linePackageCeramicPlastic

5、2.54 mm(100miles)PBGAPin GridArray封 裝 型 式 Through HoleSh封 裝 型 式 SurfaceMountShapeMaterialLead PitchNo of I/OTypical FeaturesPlastic1.27 mm(50miles)2 direction lead8 40SOPSmallOutlinePackagePlastic1.0, 0.8, 0.65 mm4 direction lead88200QFPQuad-FlatPack封 裝 型 式 SurfaceShapeMa封 裝 型 式 SurfaceMountShapeMat

6、erialLead PitchNo of I/OTypical FeaturesCeramic1.27, 0.762 mm(50, 30miles)2, 4 direction lead2080FPGFlatPackageof GlassCeramic1.27,1.016, 0.762 mm(50, 40, 30 miles)2040LCCLeadlessChipCarrier封 裝 型 式 SurfaceShapeMa封 裝 型 式 SurfaceMountShapeMaterialLead PitchNo of I/OTypical FeaturesCeramic1.27 mm(50mil

7、es)j-shape bend4 direction lead18124PLCCPlastic LeadedChip CarrierCeramic0.5 mm32200VSQFVerySmallQuadFlatpack封 裝 型 式 SurfaceShapeMaAssembly Main ProcessDie Cure(Optional)Die BondDie SawPlasmaCard AsyMemory TestCleanerCard TestPacking for OutgoingDetaping(Optional)Grinding(Optional)Taping(Optional)Wa

8、ferMountUV Cure(Optional)Laser markPost Mold CureMoldingLaser CutPackage SawWire Bond SMT(Optional)Assembly Main ProcessDie CureD半導(dǎo)體設(shè)備供應(yīng)商介紹-前道部分PROCESSVENDORMODELSMT - PRINTERDEKHOR-2ISMT CHIP MOUNTSIMENSHS-60TAPINGNITTODR3000-IIIINLINE GRINDER & POLISHACCRETECHPG300RMSTANDALONE GRINDERDISCO 8560DET

9、APINGNITTOMA3000WAFER MOUNTERNITTOMA3000DICING SAWDISCODFD 6361TSKA-WD-300T半導(dǎo)體設(shè)備供應(yīng)商介紹-前道部分PROCESSVENDORMOPROCESSVENDORMODELDIE BONDHITACHIDB700ESECESEC2007/2008ASMASM889898CURE OVENC-SUNQDM-4SWIRE BONDERK&SK&S MAXUM ULTRASKWUTC-2000ASMEagle60PLASMA CLEANMARCHAP1000TEPLATEPLA400MoldTOWAYPS-SERIESASAO

10、MEGA 3.8半導(dǎo)體設(shè)備供應(yīng)商介紹-前道部分PROCESSVENDORMODELDIE BONDHITA常用術(shù)語(yǔ)介紹SOP-Standard Operation Procedure 標(biāo)準(zhǔn)操作手冊(cè)WI Working Instruction 作業(yè)指導(dǎo)書(shū) PM Preventive Maintenance 預(yù)防性維護(hù)FMEA- Failure Mode Effect Analysis 失效模式影響分析SPC- Statistical Process Control 統(tǒng)計(jì)制程控制DOE- Design Of Experiment 工程試驗(yàn)設(shè)計(jì)IQC/OQC-Incoming/Outing Qual

11、ity Control 來(lái)料/出貨質(zhì)量檢驗(yàn)MTBA/MTBF-Mean Time between assist/Failure 平均無(wú)故障工作時(shí)間CPK-品質(zhì)參數(shù)UPH-Units Per Hour 每小時(shí)產(chǎn)出 QC 7 Tools ( Quality Control 品管七工具 ) OCAP ( Out of Control Action Plan 異常改善計(jì)劃 ) 8D ( 問(wèn)題解決八大步驟 ) ECN Engineering Change Notice ( 制程變更通知 ) ISO9001， 14001 質(zhì)量管理體系常用術(shù)語(yǔ)介紹SOP-Standard Operation P前道后道EO

12、LWire Bond引線鍵合Mold模塑Laser Mark激光印字Laser Cutting激光切割EVI產(chǎn)品目檢 SanDisk Assembly Process Flow SanDisk 封裝工藝流程 Die Prepare芯片預(yù)處理ie Attach芯片粘貼Wafer IQC來(lái)料檢驗(yàn)Plasma Clean清洗Plasma Clean清洗Saw Singulation切割成型 SMT表面貼裝PMC模塑后烘烤前道后道Wire BondMoldLaser MarkLasSMT（表面貼裝）-包括錫膏印刷(Solder paste printing),置件(Chip shooting),回流焊

13、(Reflow),DI水清洗(DI water cleaning),自動(dòng)光學(xué)檢查(Automatic optical inspection),使貼片零件牢固焊接在substrate上StencilSubstrateSolder paste pringtingChip shootingReflowOvenDI water cleaningAutomatic optical inpectionCapacitorDI waterCameraHot windNozzlePADPADSolder pasteSMT（表面貼裝）StencilSubstrateSoldeDie Prepare(芯片預(yù)處理)

14、To Grind the wafer to target thickness then separate to single chip-包括來(lái)片目檢(Wafer Incoming), 貼膜(Wafer Tape),磨片(Back Grind),剝膜(Detape),貼片(Wafer Mount),切割(Wafer Saw)等系列工序,使芯片達(dá)到工藝所要求的形狀,厚度和尺寸,并經(jīng)過(guò)芯片目檢(DVI)檢測(cè)出所有由于芯片生產(chǎn),分類或處理不當(dāng)造成的廢品.Wafer tapeBack GrindWafer DetapeWafer SawDie Prepare(芯片預(yù)處理) To Grind th Inl

15、ine Grinding & Polish - Accretech PG300RM Transfer Coarse Grind 90%Fine Grind 10% Centrifugal Clean Alignment & Centering Transfer Back Side Upward De-taping Mount Key Technology: 1. Low Thickness Variation: +/_ 1.5 Micron2. Good Roughness: +/- 0.2 Micron3. Thin Wafer Capacity: Up to 50 Micron4. All

16、-In-One solution , Zero Handle Risk Inline Grinding & Polish - 2.Grinding 相關(guān)材料A TAPE麥拉B Grinding 砂輪C WAFER CASSETTLE2.Grinding 相關(guān)材料工藝對(duì)TAPE麥拉的要求：1。MOUNTNo delamination STRONG2。SAW ADHESIONNo die flying offNo die crack工藝對(duì)TAPE麥拉的要求：1。MOUNT工藝對(duì)麥拉的要求：3。EXPANDINGTAPE Die distanceELONGATION Uniformity 4。PIC

17、KING UPWEAKADHESIONNo contamination工藝對(duì)麥拉的要求：3。EXPANDING3.Grinding 輔助設(shè)備A Wafer Thickness Measurement 厚度測(cè)量?jī)x 一般有接觸式和非接觸式光學(xué)測(cè)量?jī)x兩種；B Wafer roughness Measurement 粗糙度測(cè)量?jī)x 主要為光學(xué)反射式粗糙度測(cè)量方式；3.Grinding 輔助設(shè)備4.Grinding 配套設(shè)備A Taping 貼膜機(jī)B Detaping 揭膜機(jī)C Wafer Mounter 貼膜機(jī)4.Grinding 配套設(shè)備 Wafer Taping - Nitto DR300IICut

18、 TapeTaping AlignmentTransfer Transfer Back Key Technology: 1. High Transfer Accuracy: +/_ 2 Micron2. High Cut Accuracy : +/- 0.2 mm3. High Throughput : 50 pcs wafer / Hour4. Zero Void and Zero Wafer Broken Wafer Taping - DetapingDetapinglWafer mountWafer framelWafer mountWafer frame晶 圓 切 割 (Dicing)

19、Dicing 設(shè)備:A DISCO 6361 系列B ACCERTECH 東京精密AW-300T晶 圓 切 割 (Dicing)Dicing 設(shè)備:Main Sections IntroductionCutting Area: Spindles (Blade, Flange, Carbon Brush), Cutting Table, Axes (X, Y1, Y2, Z1, Z2, Theta), OPCLoader Units: Spinner, Elevator, Cassette, Rotation ArmMain Sections IntroductionCuttBlade Clos

20、e-ViewBladeCutting WaterNozzleCooling Water NozzleBlade Close-ViewBladeCutting WDie Sawing Disco 6361 Key Technology:1. Twin-Spindle Structure.2. X-axis speed: up to 600 mm/s. 3. Spindle Rotary Speed : Up to 45000 RPM.4. Cutting Speed: Up to 80mm/s.5. Z-axis repeatability: 1um.6. Positioning Accurac

21、y: 3um . RearFrontDie Sawing Disco 6361 Key TeA Few ConceptsBBD (Blade Broken Detector)Cutter-set: Contact and OpticalPrecision InspectionUp-Cut and Down-CutCut-in and Cut-remainA Few ConceptsBBD (Blade Broke晶 圓 切 割 (Dicing)Dicing 相關(guān)工藝A Die Chipping 芯片崩角B Die Corrosive 芯片腐蝕C Die Flying 芯片飛片晶 圓 切 割 (

22、Dicing)Dicing 相關(guān)工藝Wmax , Wmin , Lmax , DDY ,DY 規(guī)格DY 0.008mmWmax 0.070mmWmin 0.8*刀厚Lmax 1000,4 90/1004,8,11 9011,15IC type loop typeCapillary How To Design Your CapillaryTIGold Wire Gold Wire Manufacturer (Nippon , SUMTOMO , TANAKA. ) Gold Wire Data ( Wire Diameter , Type , EL , TS)Gold Wire Gold Wir

23、e Manufactur焊線(Wire Bond)3.Wire Bond 輔助設(shè)備A Microscope 用于測(cè)loop heightB Wire Pull 拉力計(jì)（DAGE4000）C Ball Shear 球剪切力計(jì)D Plasma 微波/等離子清洗計(jì)焊線(Wire Bond)3.Wire Bond 輔助設(shè)備Ball SizeBall Thickness 單位: um，Mil 量測(cè)倍率: 50X Ball Thickness 計(jì)算公式 60 um BPP 1/2 WD=50% 60 um BPP 1/2 WD=40%50%Ball SizeBall Size & Ball Thickne

24、ssBall SizeBall Thickness 單位: umLoop Height 單位: um，Mil 量測(cè)倍率: 20XLoop Height 線長(zhǎng)Loop Height 單位: um，MilLoop HeiWire Pull 1 Lifted Bond (Rejected) 2 Break at neck (Refer wire-pull spec) 3 Break at wire ( Refer wire-pull spec) 4 Break at stitch (Refer stitch-pull spec) 5 Lifted weld (Rejected)Wire Pull 1

25、 Lifted Bond (RejecBall Shear 單位: gram or g/mil Ball Shear 計(jì)算公式 Intermetallic（IMC有75%的共晶,Shear Strength標(biāo)準(zhǔn)為6.0g/mil。SHEAR STRENGTHBall Shear/Area (g/mil) Ball Shear = x; Ball Size = y; Area = (y/2) x/(y/2) = z g/milBall Shear 單位: gram or g/mil等離子工藝Plasma Process氣相-固相表面相互作用 Gas Phase - Solid Phase Int

26、eractionPhysical and Chemical分子級(jí)污染物去除Molecular Level Removal of Contaminants30 to 300 Angstroms可去除污染物包括 Contaminants Removed難去除污染物包括 Difficult Contaminants Finger PrintsFluxGross ContaminantsOxidesEpoxySolder MaskOrganic ResiduePhotoresistMetal Salts (Nickel Hydroxide)等離子工藝Plasma Process氣相-固相表面相Plas

27、ma Clean March AP1000 Key Technology:1. Argon Condition, No oxidation.2. Vacuum Pump dust collector.3. Clean Level : blob Test Angle 8 Degree.PlasmaPCB SubstrateDie+Electrode+ArWell Cleaned with Plasma 80 o 8 o Organic Contamination vs Contact AngleWater DropChipChip No Clean Well ClMold(模塑)To mold strip with plastic compound then pr