等離子體等離子體制備微晶硅薄膜太陽(yáng)電池

等離子體等離子體制備微晶硅薄膜太陽(yáng)電池

1性別對(duì)碳系co能grackingsnosilit-sic-tofab意義上的粘膜上訴粘膜。面向非正字體的si-分配，分配給ci的分配，并分配給非正字體的分配。例如，在這一事件中，高速hy譴責(zé)玻璃傳輸?shù)谋砻鎱^(qū)域（c-si:h）的數(shù)量尚未確定，但報(bào)告的sultansultan表面區(qū)域的數(shù)量尚未確定。這是第一塊牌匾。微絲區(qū)域。洛杉磯高原（cd）上的第二塊太陽(yáng)上的第二塊太陽(yáng)上的第二塊太陽(yáng)上的第二塊太陽(yáng)上的第二塊太陽(yáng)上的第二塊太陽(yáng)上的第二塊太陽(yáng)上的第二塊太陽(yáng)上的第二塊太陽(yáng)上的第二塊太陽(yáng)上的第二塊太陽(yáng)上的第二塊太陽(yáng)上的第二塊太陽(yáng)上的第二塊太陽(yáng)上的第二塊太陽(yáng)上的第二塊太陽(yáng)上的第二塊太陽(yáng)上的第二塊太陽(yáng)上的第二塊太陽(yáng)上的第二塊太陽(yáng)上的第二塊太陽(yáng)上的第二塊太陽(yáng)上的第二塊太陽(yáng)上的第二塊太陽(yáng)上的第二塊太陽(yáng)上的第二塊太陽(yáng)上的第二塊太陽(yáng)上的第二塊太陽(yáng)上的第二塊太陽(yáng)上的第二塊太陽(yáng)上的第二塊太陽(yáng)上的第二塊太陽(yáng)上的第二塊太陽(yáng)上的第二塊太陽(yáng)上的第二塊太陽(yáng)上的第二塊太陽(yáng)上的。ThispaperaddressesthedevelopmentofSnO2andSnO2/ZnObi-layerfilmsbyDC-magnetronsputtering.SnO2andSnO2/ZnOfilmswereexposedinH-plasmaatdifferentsubstratetemperaturesforvarioustimes.Theopticalproperties,surfacemorphologies,andresistivitiesoftheseTCOfilmsbeforeandafterH-plasmaexposurewerestudied.Finally,aμc-Si:HthinfilmsolarcellwasfabricatedonZnO/SnO2/glass.2u2004藥品與u2004ZnOfilmswiththicknessof50nmweredepositedonSnO2-coatedglassbyDC-magnetronsputteringatasubstratetemperatureTs=300℃,DCvoltageVDC=250V,andpressure0.5Pa.TheSnO2andSnO2/ZnOfilmswereexposedunderhydrogenplasmawiththeconditionsof50WRF-power,130Pachamberpressure,and200sccmH2flow,wherethesubstratetemperaturesandexposuretimeswerechanged.Filmcharacterizationswereperformedbeforeandaftertheplasmaexposure.TheopticaltransmissionsoftheTCOfilmsweremeasuredwithaUVspectrophotometer,andthesurfacemorphologieswerestudiedbyscanningelectronmicroscopy(SEM).TheresistivitiesoftheSnO2andSnO2/ZnOfilmsbeforeandafterH-plasmaexposureweretestedwithafour-pointprobe.SimplemicrocrystallinesolarcellswerefabricatedinamultichamberPECVDsystemwithdiodetypeparallelplatereactorsdecomposingdifferentgasmixturesbyplasmaonSnO2/ZnOfilm.Thep-i-nstructurewasglass/SnO2/ZnO/p-μc-Si:H/i-μc-Si:H/n-μc-Si:H/Al.Theperformancesofthesolarcellswerestudiedfromcurrent-voltagecharacteristics,measuredunderAM1.5illuminationbyasourcesolarsimulator.3影響的神圣迪迪斯運(yùn)營(yíng)3.1“vsippen”第..4與.4細(xì)胞二元visiburesixcoatingvisipersonalssorace.........................................................3.3Figures1and2showtheopticaltransmissionspectraofthesinglelayerSnO2andbi-layerSnO2/ZnOfilmsbeforeandafterhydrogenplasmaexposure,respectively.Inallthecases,theopticaltransmissionishighoverawiderrangeofwavelengthsforbothsingle-layerSnO2(curveaofFig.1)andSnO2/ZnObi-layer(curveeofFig.2)beforeH-plasmaexposure.WiththinZnOfilm,thetransmissionintherangeofvisiblelighthaslittlechange.InFig.1,curvebshowstheopticaltransmissionofSnO2filmafter5minhydrogenplasmaexposureat150℃,whereascurvecshowsthetransmissionafter5minH-plasmaexposureat200℃andcurvedshowsthetransmissionafter1minH-plasmaexposureat300℃.At150℃,theSnO2filmisstableenoughduringH-plasmaexposureandtheopticaltransmissiondoesnotchangeatall.Howeverwhenthesubstratetemperatureishigherthan150℃,thetransmissioninthevisiblerangedecreasesdrastically.InthecaseofSnO2/ZnObi-layerfilm(showninFig.2),ZnOcoatinginducesadecreaseinthetransmissionintheinfraredregion,butthechangeintransmissionisverysmall,andaftertheH-plasmaexposurethereisaslightincreaseininfraredtransmission.Thismaybebeneficialforitsapplicationinsolarcellsasawindowlayer.3.2u3000ge-la三維建模Figures3(a)and(b)showthesurfacemorphologiesofSnO2filmsbeforeandafterH-plasmaexposure,respectively.After1minofplasmaexposure,theSEMofhydrogenplasma-exposedSnO2changed.Grainswithsize~80nmareobservedintheplasma-degradedSnO2film,andthegrainsdisplaysphericalcharacter.Meanwhile,graypowderappearedonthesurfaceoftheglass.Thereasonmaybethatunderhydrogenplasma,HatomsreactwithlatticeoxygenatomsandmetallicSnispresented.Figure4showsthesurfacemorphologyofSnO2/ZnObi-layerfilmafterH-plasmaexposure.Comparedwiththesurfacemorphologyofas-depositedZnOfilm(notshownhere),ZnOfilmdoesnotdegradeunderhydrogenplasma,becauseathinZnOlayeractsasaprotectivelayeronSnO2surfaces,notwithstandingthicknessof50nmonly.Thisbi-layerfilmcanbeexposedtoH-plasmawithoutanymajorchangeinopticaltransmission.ThedifferentdurabilityofSnO2andZnOtoH-plasmaisduetothedifferentoxidizabilitiesofSnandZnions,theformerofwhichishigherthanthelatter.3.3sno2/znobi-lactore-sno2德國(guó)co治理法上的sno2/la三維c.sn/h-placket/h-placket/sno2straced以lacket為例Table1showstheresistivitiesofSnO2andSnO2/ZnObi-layerfilmsbeforeandafterH-plas-maexposure.ForSnO2films,after5minH-plasmaexposureat150℃,theresistivitybecomeslessthanthatofthedepositedfilm,butremainsonthesameorderofmagnitude;Whenthetemperatureincreases,theresistivitydecreasessharply.ThisiscausedbythedeoxidizationofSnfromtheSnO2structure.ForSnO2/ZnObi-layerfilms,H-plasmaexposurehaslittleinfluenceontheresistivitiesofthefilms,andthedecreasingofresistivitiesiscausedbyannealingatdifferentsubstratetemperatures.Simplesinglejunctionsolarcellswiththestructurep-μc-Si:H/i-μc-Si:H/n-μc-Si:H/Alhavebeenfabricatedonglass/SnO2/ZnOsubstrates.TheI-VcharacteristicsofthismicrocrystallinesiliconbasedcellsareshowninFig.5,andanefficiencyof3.8%isobtained.Dasetal.demonstratedthatcellspreparedonSnO2-coatedglasssubstratehavealowefficiencyvalue.ThisisduetothedegradationofSnO2filmunderhighhydrogenplasma,whichisessentialforthefabricationofap-μc-Si:Hlayer.3.4u2004范圍ThereasonsthatZnOfilmismorestablethanSnO2filminH-plasmacanbeexplainedbythedifferenceofstandardelectrodeelectricalpotentialbetweenmetalZnandSn:Sn4+?→0.15Sn2+?→???0.136Sn(1)Sn4+→0.15Sn2+→-0.136Sn(1)Zn2+?→???0.763Zn(2)Ζn2+→-0.763Ζn(2)Equations(1)and(2)showthestandardelectrodepotentialelectricalpotentialofmetalSnandZn.Althoughthisvalueismeasuredinliquidsolution,wecanobtainthattheelectricalpotentialofSn4+ismuchhigherthanZn2+ironinthesamestate.ThismeansthatinfilmsZnOismorestablethanSnO2underH-plasmacondition,andthelattermayreactasfollows:SnO2+4H→Sn+2H2OSnΟ2+4Η→Sn+2Η2ΟThus,theopticaltransmissionofSnO2filmsdecreasesdrasticallyunderH-plasmaoftheplayerandthemaximumpartofincidentlightwillbeabsorbedinsidetheTCO,i.e.effectivelightabsorptionintheactivelayerisreduced.SnO2/ZnOstructureisstableenoughinH-plasmaandcanbeappliedinmicrocrystallinesiliconsolarcells.4sno2/znobi-lactorssili農(nóng)村SnO2andZnOcoatedSnO2